JP2012108519A - 半導体装置、発光装置、モジュール、及び電子機器 - Google Patents
半導体装置、発光装置、モジュール、及び電子機器 Download PDFInfo
- Publication number
- JP2012108519A JP2012108519A JP2011272981A JP2011272981A JP2012108519A JP 2012108519 A JP2012108519 A JP 2012108519A JP 2011272981 A JP2011272981 A JP 2011272981A JP 2011272981 A JP2011272981 A JP 2011272981A JP 2012108519 A JP2012108519 A JP 2012108519A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- signal line
- transistor
- gate signal
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000005530 etching Methods 0.000 claims description 27
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 177
- 239000010410 layer Substances 0.000 description 122
- 238000000034 method Methods 0.000 description 73
- 239000000463 material Substances 0.000 description 58
- 239000003990 capacitor Substances 0.000 description 44
- 238000003860 storage Methods 0.000 description 43
- 239000012535 impurity Substances 0.000 description 40
- 239000000945 filler Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 21
- 239000003566 sealing material Substances 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical class [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 239000005038 ethylene vinyl acetate Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 6
- 229920002620 polyvinyl fluoride Polymers 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 239000005041 Mylar™ Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 239000011152 fibreglass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920000915 polyvinyl chloride Polymers 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000002274 desiccant Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- -1 polyparaphenylene vinylene Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101100411598 Mus musculus Rab9a gene Proteins 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2018—Display of intermediate tones by time modulation using two or more time intervals
- G09G3/2022—Display of intermediate tones by time modulation using two or more time intervals using sub-frames
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
- G09G2310/061—Details of flat display driving waveforms for resetting or blanking
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2018—Display of intermediate tones by time modulation using two or more time intervals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
- G09G3/3241—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
- G09G3/325—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】i行目を除くゲート信号線の電位は、i行目のゲート信号線106が選択されている以外の期間においては定電位となっていることを利用し、i−1行目のゲート信号線111をi行目のゲート信号線106によって制御されるEL素子103への電流供給線として兼用することで配線数を減らし、高開口率を実現する。
【選択図】図1
Description
一方、アクティブマトリクス型の場合は、各画素にTFTを有し、各画素内で信号を保持出来るようになっている。
において、1501は、画素に信号を書き込む時のスイッチング素子として機能するTFT(以下、スイッチング用TFTという)である。図15(B)では、スイッチング用TFTはダブルゲート構造となっているが、シングルゲート構造あるいはトリプルゲート構造やそれ以上のゲート本数を持つマルチゲート構造をとっても良い。また、TFTの極性は回路の構成形態によっていずれかの極性を用いれば良い。1502はEL素子1503に供給する電流を制御するための素子(電流制御素子)として機能するTFT(以下、EL駆動用TFTという)である。図15(B)では、EL素子1503の陽極1509と電流供給線1507との間に配置されている。別の構成方法として、EL素子1503の陰極1510と陰極電極1508の間に配置したりすることも可能である。また、TFTの極性は回路の構成形態によっていずれかの極性を用いれば良い。ただし、トランジスタの動作としてソース接地が良いこと、EL素子1503の製造上の制約などから、EL駆動用TFTにはpチャネル型を用い、EL素子1503の陽極1509と電流供給線1507との間にEL駆動用TFTを配置する方式が一般的であり、多く採用されている。1504は、ソース信号線1506から入力される信号(電圧)を保持するための保持容量である。図15(B)での保持容量1504の一方の端子は、電流供給線1507に接続されているが、専用の配線を用いることもある。スイッチング用TFT1501のゲート端子は、ゲート信号線1505に、ソース端子は、ソース信号線1506に接続されている。また、EL駆動用TFT1502のドレイン端子はEL素子1503の陽極1509に、ソース端子は電流供給線1507に接続されている。
図1(B)中、101はスイッチング用TFT、102はEL駆動用TFT、103はEL画素、104は保持容量、105はソース信号線、106はi行目に走査されるゲート信号線、108は陰極配線、109はEL画素の陽極、110はEL画素の陰極、111は隣り合う1行前の行のゲート信号線である。スイッチングTFT101,201は、前述したように、EL素子の構造に応じて極性を決定すれば良い。
スイッチング用TFTは、pチャネル型であるので、ゲート信号線の電位がスイッチング用TFTのソース領域の電位よりも十分に低い(つまりスイッチング用TFTのゲート・ソース間電圧の絶対値がしきい値電圧を上回る)ときに、スイッチング用TFTは導通状態となる。その時のゲート信号線の電位は、ソース信号線の電圧が画素に書き込まれるようにするため、ソース信号線での最も低い電位よりも十分低くしておく必要がある。まず、i−1行目では、期間Bにおいて、ゲート信号線が選択される。i行目では、期間Cにおいて選択され、i+1行目では、期間Dにおいて選択され、i+2行目では、期間Eにおいて選択される。このように、各行において、ゲート信号線が選択されて、次の行へシフトしていく。
従って、期間Bにおいても、EL駆動用TFTのゲート電極の電位は下がったが、同時に、EL駆動用TFTのソース電極の電位も下がるため、EL駆動用TFTのゲート・ソース間電圧は、期間Aと期間Bとでは、同じである。よって、期間Bにおいては、i行目の画素のEL素子には、電流は流れない。また、たとえ、EL駆動用TFTが導通状態にあったとしても、期間Bでは、EL駆動用TFTのソース電極の電位は下がり、EL素子の陰極配線の電位よりも低くなることが想定されるため、EL素子には、順バイアスの電圧はかからなくなるため、電流は流れなくなる。そして、期間Bの最後において、i−1行目のゲート信号線の電圧が元に戻る。その結果、i行目の画素のEL駆動用TFTのゲート電極の電位も元に戻る。
よって、i+1行目の画素のEL駆動用TFTのゲート電極の電位は、ソース信号線の電位と同じになる。期間Dでは、ソース信号線は、H信号の状態にあるとしている。よって、i+1行目の画素のEL駆動用TFTのゲート電極の電位も、ソース信号線と同電位となり、高くなる。その時、保持容量の片方の電極、つまり、i行目のゲート信号線の電位は、すでに高い状態に戻っている。よって、保持容量には、i行目のゲート信号線とi+1行目の画素のEL駆動用TFTのゲート電極との間の電圧が加わることになり、EL駆動用TFTのゲート・ソース間電圧の絶対値は小さくなる。従って、i+1行目の画素のEL駆動用TFTは非導通状態になり、i+1行目のEL素子に電流が流れず、発光しない。
よって、i+2行目の画素のEL駆動用TFTのゲート電極の電位は、ソース信号線の電位と同じになる。期間Eでは、ソース信号線は、L信号の状態にあるとしている。よって、i+2行目の画素のEL駆動用TFTのゲート電極の電位も、ソース信号線と同電位となり、低くなる。その時、保持容量の片方の電極、つまり、i+1行目のゲート信号線の電位は、すでに高い状態に戻っている。よって、保持容量には、i+1行目のゲート信号線とi+2行目の画素のEL駆動用TFTのゲート電極との間の電圧が加わることになり、EL駆動用TFTのゲート・ソース間電圧の絶対値は大きくなる。従って、i+2行目の画素のEL駆動用TFTは導通状態になり、i+2行目のEL素子に電流が流れ、発光する。i+2行目のEL素子を流れる電流は、i+1行目のゲート信号線を通して供給される。
そして、アドレス期間Ta3が終了し、次のアドレス期間Ta1が開始すると、通常の動作に戻していく。これにより、サステイン期間Ts3の長さを制御することが出来る。このように、一つ前の行のゲート信号線の電位を上げておき、非表示期間を設ける期間を、クリア期間(Tcn n:サブフレーム期間に付された番号)と呼ぶことにする。
例えば、プラズマCVD法でSiH4、NH3、N2Oから作製される酸化窒化シリコン膜5002aを10〜200[nm](好ましくは50〜100[nm])形成し、同様にSiH4、N2Oから作製される酸化窒化水素化シリコン膜5002bを50〜200[nm](好ましくは100〜150[nm])の厚さに積層形成する。本実施例では下地膜5002を2層構造として示したが、前記絶縁膜の単層膜または2層以上積層させた構造として形成しても良い。
このようにして作製される酸化シリコン膜は、その後400〜500[℃]の熱アニールによりゲート絶縁膜として良好な特性を得ることが出来る。
(図8(A))
ドーピングの方法はイオンドープ法若しくはイオン注入法で行えば良い。イオンドープ法の条件はドーズ量を1×1013〜5×1014[atoms/cm2]とし、加速電圧を60〜100[keV]として行う。n型を付与する不純物元素として15族に属する元素、典型的にはリン(P)または砒素(As)を用いるが、ここではリン(P)を用いる。この場合、導電層5011〜5015がn型を付与する不純物元素に対するマスクとなり、自己整合的に第1の不純物領域5017〜5025が形成される。第1の不純物領域5017〜5025には1×1020〜1×1021[atoms/cm3]の濃度範囲でn型を付与する不純物元素を添加する。(図8(B))
基板側(試料ステージ)には50[W]のRF(13.56[MHz])電力を投入し、第1のエッチング処理に比べ低い自己バイアス電圧を印加する。このような条件によりW膜を異方性エッチングし、かつ、それより遅いエッチング速度で第1の導電層であるTaを異方性エッチングして第2の形状の導電層5026〜5031(第1の導電層5026a〜5031aと第2の導電層5026b〜5031b)を形成する。ゲート絶縁膜5007は、第2の形状の導電層5026〜5031で覆われない領域はさらに20〜50[nm]程度エッチングされ、薄くなった領域が形成される。(図8(C))
、エポキシ樹脂、シリコン樹脂、PVB(ポリビニルブチラル)またはEVA(エチレンビニルアセテート)を用いることができる。この充填材4023の内部に乾燥剤を設けておくと、吸湿効果を保持できるので好ましい。また充填材4023の内部に、酸素を捕捉する効果を有する酸化防止剤等を配置することで、EL層の劣化を抑えても良い。
と同じ番号のものは同じ部分を指しているので説明は省略する。
を用いることができる。この充填材4023の内部に乾燥剤を設けておくと、吸湿効果を保持できるので好ましい。また充填材4023の内部に、酸素を捕捉する効果を有する酸化防止剤等を配置することで、EL層の劣化を抑えても良い。
(T.Tsutsui, C.Adachi, S.Saito, Photochemical Processes in Organized Molecular Systems, ed.K.Honda,(Elsevier Sci.Pub., Tokyo,1991)p.437.)
上記の論文により報告されたEL材料(クマリン色素)の分子式を以下に示す。
上記の論文により報告されたEL材料(Pt錯体)の分子式を以下に示す。
(T.Tsutsui, M.J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38(12B)(1999)L1502.)
上記の論文により報告されたEL材料(Ir錯体)の分子式を以下に示す。
であり、本体3331、記録媒体(DVD等)3332、操作スイッチ3333、表示部(a)3334、表示部(b)3335等を含む。表示部(a)3334は主として画像情報を表示し、表示部(b)3335は主として文字情報を表示するが、本発明の電子装置はこれら表示部(a)3334、表示部(b)3335に用いることが出来る。なお、記録媒体を備えた画像再生装置には家庭用ゲーム機器なども含まれる。
Claims (16)
- (陽極)
第1及び第2のトランジスタと、第1乃至第6の導電層と、を有し、
前記第1のトランジスタのゲート電極は、前記第1の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第2の導電層を介して前記第3の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、前記第4の導電層を介して前記第2のトランジスタのゲート電極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの一方は、前記第5の導電層を介して発光素子の陽極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの他方は、前記第6の導電層に電気的に接続され、
前記第1の導電層と前記第6の導電層とは、第1の方向に延びて設けられ、
前記第3の導電層は、前記第1の方向と交差する第2の方向に延びて設けられ、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、第1の導電膜をエッチング加工することによって形成されたものであり、
前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層は、第2の導電膜をエッチング加工することによって形成されたものであり、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層よりも先に形成されたものであることを特徴とする半導体装置。 - (陰極)
第1及び第2のトランジスタと、第1乃至第6の導電層と、を有し、
前記第1のトランジスタのゲート電極は、前記第1の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第2の導電層を介して前記第3の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、前記第4の導電層を介して前記第2のトランジスタのゲート電極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの一方は、前記第5の導電層を介して発光素子の陰極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの他方は、前記第6の導電層に電気的に接続され、
前記第1の導電層と前記第6の導電層とは、第1の方向に延びて設けられ、
前記第3の導電層は、前記第1の方向と交差する第2の方向に延びて設けられ、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、第1の導電膜をエッチング加工することによって形成されたものであり、
前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層は、第2の導電膜をエッチング加工することによって形成されたものであり、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層よりも先に形成されたものであることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1のトランジスタは、複数のトランジスタが直列に電気的に接続された構成を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第2のトランジスタは、複数のトランジスタが並列に電気的に接続された構成を有することを特徴とする半導体装置。 - 第1及び第2のトランジスタと、第1乃至第6の導電層と、発光素子と、を有し、
前記第1のトランジスタのゲート電極は、前記第1の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第2の導電層を介して前記第3の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、前記第4の導電層を介して前記第2のトランジスタのゲート電極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの一方は、前記第5の導電層を介して前記発光素子の陽極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの他方は、前記第6の導電層に電気的に接続され、
前記第1の導電層と前記第6の導電層とは、第1の方向に延びて設けられ、
前記第3の導電層は、前記第1の方向と交差する第2の方向に延びて設けられ、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、第1の導電膜をエッチング加工することによって形成されたものであり、
前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層は、第2の導電膜をエッチング加工することによって形成されたものであり、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層よりも先に形成されたものであることを特徴とする発光装置。 - 第1及び第2のトランジスタと、第1乃至第6の導電層と、発光素子と、を有し、
前記第1のトランジスタのゲート電極は、前記第1の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第2の導電層を介して前記第3の導電層に電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、前記第4の導電層を介して前記第2のトランジスタのゲート電極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの一方は、前記第5の導電層を介して前記発光素子の陰極に電気的に接続され、
前記第2のトランジスタのソース及びドレインの他方は、前記第6の導電層に電気的に接続され、
前記第1の導電層と前記第6の導電層とは、第1の方向に延びて設けられ、
前記第3の導電層は、前記第1の方向と交差する第2の方向に延びて設けられ、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、第1の導電膜をエッチング加工することによって形成されたものであり、
前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層は、第2の導電膜をエッチング加工することによって形成されたものであり、
前記第1のトランジスタのゲート電極、前記第2のトランジスタのゲート電極及び前記第3の導電層は、前記第1の導電層、前記第2の導電層、前記第4の導電層、前記第5の導電層及び前記第6の導電層よりも先に形成されたものであることを特徴とする発光装置。 - 請求項5または請求項6において、
前記第1のトランジスタは、複数のトランジスタが直列に電気的に接続された構成を有することを特徴とする発光装置。 - 請求項5乃至請求項7のいずれか一において、
前記第2のトランジスタは、複数のトランジスタが並列に電気的に接続された構成を有することを特徴とする発光装置。 - 請求項1乃至請求項4のいずれか一に記載の前記半導体装置を有するモジュール。
- 請求項1乃至請求項4のいずれか一に記載の前記半導体装置と、フレキシブルプリントサーキットと、を有するモジュール。
- 請求項1乃至請求項4のいずれか一に記載の前記半導体装置を有する電子機器。
- 請求項1乃至請求項4のいずれか一に記載の前記半導体装置と、音声入力部と、音声出力部と、アンテナと、を有する電子機器。
- 請求項5乃至請求項16のいずれか一に記載の前記発光装置を有するモジュール。
- 請求項5乃至請求項16のいずれか一に記載の前記発光装置と、フレキシブルプリントサーキットと、を有するモジュール。
- 請求項5乃至請求項16のいずれか一に記載の前記発光装置を有する電子機器。
- 請求項5乃至請求項16のいずれか一に記載の前記発光装置と、音声入力部と、音声出力部と、アンテナと、を有する電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011272981A JP5292452B2 (ja) | 2000-03-27 | 2011-12-14 | 発光装置、モジュール、及び電子機器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000087683 | 2000-03-27 | ||
JP2000087683 | 2000-03-27 | ||
JP2011272981A JP5292452B2 (ja) | 2000-03-27 | 2011-12-14 | 発光装置、モジュール、及び電子機器 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001084235A Division JP4954380B2 (ja) | 2000-03-27 | 2001-03-23 | 発光装置、半導体装置 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013011026A Division JP5823995B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール及び電子機器 |
JP2013011025A Division JP5386646B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
JP2013011024A Division JP5487337B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012108519A true JP2012108519A (ja) | 2012-06-07 |
JP5292452B2 JP5292452B2 (ja) | 2013-09-18 |
Family
ID=18603655
Family Applications (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011003121A Expired - Lifetime JP5089782B2 (ja) | 2000-03-27 | 2011-01-11 | 半導体装置の作製方法、発光装置の作製方法、モジュールの作製方法、電子機器の作製方法 |
JP2011272981A Expired - Lifetime JP5292452B2 (ja) | 2000-03-27 | 2011-12-14 | 発光装置、モジュール、及び電子機器 |
JP2013011024A Expired - Fee Related JP5487337B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
JP2013011026A Expired - Lifetime JP5823995B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール及び電子機器 |
JP2013011025A Expired - Lifetime JP5386646B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
JP2014063187A Withdrawn JP2014112268A (ja) | 2000-03-27 | 2014-03-26 | 電子装置 |
JP2015155970A Withdrawn JP2015232724A (ja) | 2000-03-27 | 2015-08-06 | 電子装置 |
JP2015155969A Expired - Lifetime JP5917755B2 (ja) | 2000-03-27 | 2015-08-06 | 発光装置、モジュール及び電子機器 |
JP2017081074A Expired - Lifetime JP6603680B2 (ja) | 2000-03-27 | 2017-04-17 | 発光装置 |
JP2018223032A Expired - Lifetime JP6695407B2 (ja) | 2000-03-27 | 2018-11-29 | 発光装置 |
JP2020035792A Withdrawn JP2020144365A (ja) | 2000-03-27 | 2020-03-03 | 発光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011003121A Expired - Lifetime JP5089782B2 (ja) | 2000-03-27 | 2011-01-11 | 半導体装置の作製方法、発光装置の作製方法、モジュールの作製方法、電子機器の作製方法 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013011024A Expired - Fee Related JP5487337B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
JP2013011026A Expired - Lifetime JP5823995B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール及び電子機器 |
JP2013011025A Expired - Lifetime JP5386646B2 (ja) | 2000-03-27 | 2013-01-24 | 発光装置、モジュール、電子機器 |
JP2014063187A Withdrawn JP2014112268A (ja) | 2000-03-27 | 2014-03-26 | 電子装置 |
JP2015155970A Withdrawn JP2015232724A (ja) | 2000-03-27 | 2015-08-06 | 電子装置 |
JP2015155969A Expired - Lifetime JP5917755B2 (ja) | 2000-03-27 | 2015-08-06 | 発光装置、モジュール及び電子機器 |
JP2017081074A Expired - Lifetime JP6603680B2 (ja) | 2000-03-27 | 2017-04-17 | 発光装置 |
JP2018223032A Expired - Lifetime JP6695407B2 (ja) | 2000-03-27 | 2018-11-29 | 発光装置 |
JP2020035792A Withdrawn JP2020144365A (ja) | 2000-03-27 | 2020-03-03 | 発光装置 |
Country Status (6)
Country | Link |
---|---|
US (6) | US6475845B2 (ja) |
EP (1) | EP1139454A3 (ja) |
JP (11) | JP5089782B2 (ja) |
KR (1) | KR100802344B1 (ja) |
CN (2) | CN101154350B (ja) |
TW (1) | TW521226B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101470968B1 (ko) * | 2013-11-01 | 2014-12-09 | 호서대학교 산학협력단 | Vdd 전원 라인 없이 문턱전압과 전압강하를 보상하는 유기발광 다이오드 화소 회로 |
Families Citing this family (190)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001177101A (ja) * | 1999-12-20 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4493779B2 (ja) | 2000-01-31 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
TW521303B (en) * | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
US7129918B2 (en) | 2000-03-10 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving electronic device |
TW521226B (en) * | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
US7525165B2 (en) | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US20010030511A1 (en) * | 2000-04-18 | 2001-10-18 | Shunpei Yamazaki | Display device |
TW512304B (en) * | 2000-06-13 | 2002-12-01 | Semiconductor Energy Lab | Display device |
US6781567B2 (en) * | 2000-09-29 | 2004-08-24 | Seiko Epson Corporation | Driving method for electro-optical device, electro-optical device, and electronic apparatus |
US6912021B2 (en) * | 2001-01-22 | 2005-06-28 | Seiko Epson Corporation | Electro-optical device, method for driving electro-optical device, electronic apparatus, and method for driving electronic apparatus |
US7569849B2 (en) * | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
EP1488454B1 (en) * | 2001-02-16 | 2013-01-16 | Ignis Innovation Inc. | Pixel driver circuit for an organic light emitting diode |
JP3612494B2 (ja) * | 2001-03-28 | 2005-01-19 | 株式会社日立製作所 | 表示装置 |
US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
US6771328B2 (en) * | 2001-07-25 | 2004-08-03 | Lg. Philips Lcd Co., Ltd. | Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof |
JP4166455B2 (ja) * | 2001-10-01 | 2008-10-15 | 株式会社半導体エネルギー研究所 | 偏光フィルム及び発光装置 |
US7365713B2 (en) * | 2001-10-24 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
KR100940342B1 (ko) | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
US6815723B2 (en) * | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
KR100484591B1 (ko) * | 2001-12-29 | 2005-04-20 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
KR100453635B1 (ko) * | 2001-12-29 | 2004-10-20 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 |
JP3818261B2 (ja) | 2002-01-24 | 2006-09-06 | セイコーエプソン株式会社 | 発光装置及び電子機器 |
US7098069B2 (en) | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
TWI286044B (en) | 2002-02-22 | 2007-08-21 | Semiconductor Energy Lab | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
AU2003253712A1 (en) * | 2002-03-20 | 2003-09-29 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display devices, and their manufacture |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
JP3989763B2 (ja) * | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7411215B2 (en) | 2002-04-15 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
JP2003332045A (ja) * | 2002-05-09 | 2003-11-21 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置及びその製造方法 |
US7164155B2 (en) | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
KR100637130B1 (ko) * | 2002-06-12 | 2006-10-20 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
TWI265636B (en) * | 2002-06-21 | 2006-11-01 | Sanyo Electric Co | Method for producing thin film transistor |
SG119187A1 (en) * | 2002-06-28 | 2006-02-28 | Semiconductor Energy Lab | Light emitting device and manufacturing method therefor |
JP3829778B2 (ja) * | 2002-08-07 | 2006-10-04 | セイコーエプソン株式会社 | 電子回路、電気光学装置、及び電子機器 |
JP3977299B2 (ja) * | 2002-09-18 | 2007-09-19 | セイコーエプソン株式会社 | 電気光学装置、マトリクス基板、及び電子機器 |
JP2004139042A (ja) * | 2002-09-24 | 2004-05-13 | Seiko Epson Corp | 電子回路、電気光学装置、電気光学装置の駆動方法及び電子機器 |
KR100905473B1 (ko) * | 2002-12-03 | 2009-07-02 | 삼성전자주식회사 | 유기 이엘 표시판 및 그 제조 방법 |
US7710019B2 (en) | 2002-12-11 | 2010-05-04 | Samsung Electronics Co., Ltd. | Organic light-emitting diode display comprising auxiliary electrodes |
KR100919635B1 (ko) * | 2002-12-31 | 2009-09-30 | 엘지디스플레이 주식회사 | 능동행렬 표시장치 |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
EP1607931B1 (en) | 2003-03-26 | 2014-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Device substrate and light-emitting device |
KR100490322B1 (ko) * | 2003-04-07 | 2005-05-17 | 삼성전자주식회사 | 유기전계발광 표시장치 |
KR100943273B1 (ko) * | 2003-05-07 | 2010-02-23 | 삼성전자주식회사 | 4-컬러 변환 방법 및 그 장치와 이를 이용한 유기전계발광표시장치 |
GB0313041D0 (en) * | 2003-06-06 | 2003-07-09 | Koninkl Philips Electronics Nv | Display device having current-driven pixels |
JP4222119B2 (ja) * | 2003-06-18 | 2009-02-12 | ブリヂストンスポーツ株式会社 | ゴルフクラブヘッド |
KR20050029426A (ko) * | 2003-09-22 | 2005-03-28 | 삼성에스디아이 주식회사 | 칼라필터층 또는 색변환층을 갖는 풀칼라 유기전계발광소자 |
US20080081105A1 (en) * | 2003-09-22 | 2008-04-03 | Samsung Sdi Co., Ltd. | Method of fabricating full color organic light-emtting device having color modulation layer using liti method |
US7230374B2 (en) * | 2003-09-22 | 2007-06-12 | Samsung Sdi Co., Ltd. | Full color organic light-emitting device having color modulation layer |
US20050093435A1 (en) * | 2003-09-22 | 2005-05-05 | Suh Min-Chul | Full color organic light-emtting device having color modulation layer |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
TWI250504B (en) * | 2004-07-02 | 2006-03-01 | Hannstar Display Corp | Pixel structure of a liquid crystal display and driving method thereof |
KR100581903B1 (ko) * | 2004-03-09 | 2006-05-22 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 |
EP1605431A1 (en) * | 2004-06-09 | 2005-12-14 | Thomson Licensing | Active-matrix display device with reduced number of electrodes |
FR2871939B1 (fr) * | 2004-06-18 | 2007-01-26 | Commissariat Energie Atomique | Agencement ameliore des composants d'un pixel oled |
JP2006012786A (ja) * | 2004-06-22 | 2006-01-12 | Samsung Sdi Co Ltd | 有機電界発光素子、並びに該製造方法 |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
JP4193805B2 (ja) * | 2004-07-27 | 2008-12-10 | セイコーエプソン株式会社 | 発光装置および画像形成装置 |
US8194006B2 (en) | 2004-08-23 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the same, and electronic device comprising monitoring elements |
US7258625B2 (en) | 2004-09-08 | 2007-08-21 | Nike, Inc. | Golf clubs and golf club heads |
US7868903B2 (en) * | 2004-10-14 | 2011-01-11 | Daktronics, Inc. | Flexible pixel element fabrication and sealing method |
US20060103299A1 (en) * | 2004-11-15 | 2006-05-18 | The Hong Kong University Of Science And Technology | Polycrystalline silicon as an electrode for a light emitting diode & method of making the same |
KR101333509B1 (ko) | 2004-12-06 | 2013-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 모듈, 및 휴대 전화 |
CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
US9280933B2 (en) | 2004-12-15 | 2016-03-08 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US9799246B2 (en) | 2011-05-20 | 2017-10-24 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US9275579B2 (en) | 2004-12-15 | 2016-03-01 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US8599191B2 (en) | 2011-05-20 | 2013-12-03 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US7619597B2 (en) | 2004-12-15 | 2009-11-17 | Ignis Innovation Inc. | Method and system for programming, calibrating and driving a light emitting device display |
US8576217B2 (en) | 2011-05-20 | 2013-11-05 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US10013907B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US9171500B2 (en) | 2011-05-20 | 2015-10-27 | Ignis Innovation Inc. | System and methods for extraction of parasitic parameters in AMOLED displays |
US20140111567A1 (en) | 2005-04-12 | 2014-04-24 | Ignis Innovation Inc. | System and method for compensation of non-uniformities in light emitting device displays |
US10012678B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US20060139265A1 (en) * | 2004-12-28 | 2006-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of display device |
US7646367B2 (en) * | 2005-01-21 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic apparatus |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
CA2496642A1 (en) | 2005-02-10 | 2006-08-10 | Ignis Innovation Inc. | Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming |
JP5355080B2 (ja) | 2005-06-08 | 2013-11-27 | イグニス・イノベイション・インコーポレーテッド | 発光デバイス・ディスプレイを駆動するための方法およびシステム |
US8138502B2 (en) * | 2005-08-05 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
KR101152134B1 (ko) * | 2005-08-26 | 2012-06-15 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CA2518276A1 (en) | 2005-09-13 | 2007-03-13 | Ignis Innovation Inc. | Compensation technique for luminance degradation in electro-luminance devices |
JP4487903B2 (ja) * | 2005-11-09 | 2010-06-23 | ソニー株式会社 | 画像処理装置および方法、並びにプログラム |
KR100708740B1 (ko) * | 2005-12-12 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 |
WO2007077715A1 (ja) * | 2006-01-05 | 2007-07-12 | Konica Minolta Holdings, Inc. | ボトムエミッション型有機エレクトロルミネッセンスパネル |
US9269322B2 (en) | 2006-01-09 | 2016-02-23 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
US9489891B2 (en) | 2006-01-09 | 2016-11-08 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
EP2458579B1 (en) | 2006-01-09 | 2017-09-20 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
CN101501748B (zh) | 2006-04-19 | 2012-12-05 | 伊格尼斯创新有限公司 | 有源矩阵显示器的稳定驱动设计 |
KR100769444B1 (ko) | 2006-06-09 | 2007-10-22 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
CA2556961A1 (en) | 2006-08-15 | 2008-02-15 | Ignis Innovation Inc. | Oled compensation technique based on oled capacitance |
TWI442368B (zh) * | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
JP4305516B2 (ja) * | 2007-01-30 | 2009-07-29 | ソニー株式会社 | 固体撮像素子及び固体撮像装置 |
JP5116359B2 (ja) * | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR101526475B1 (ko) * | 2007-06-29 | 2015-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 구동 방법 |
GB2453372A (en) * | 2007-10-05 | 2009-04-08 | Cambridge Display Tech Ltd | A pixel driver circuit for active matrix driving of an organic light emitting diode (OLED) |
TW200949807A (en) | 2008-04-18 | 2009-12-01 | Ignis Innovation Inc | System and driving method for light emitting device display |
CA2637343A1 (en) | 2008-07-29 | 2010-01-29 | Ignis Innovation Inc. | Improving the display source driver |
JP5525224B2 (ja) | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8610155B2 (en) * | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
US9370075B2 (en) | 2008-12-09 | 2016-06-14 | Ignis Innovation Inc. | System and method for fast compensation programming of pixels in a display |
US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5339972B2 (ja) * | 2009-03-10 | 2013-11-13 | 株式会社ジャパンディスプレイ | 画像表示装置 |
US10319307B2 (en) | 2009-06-16 | 2019-06-11 | Ignis Innovation Inc. | Display system with compensation techniques and/or shared level resources |
US9311859B2 (en) | 2009-11-30 | 2016-04-12 | Ignis Innovation Inc. | Resetting cycle for aging compensation in AMOLED displays |
CA2688870A1 (en) | 2009-11-30 | 2011-05-30 | Ignis Innovation Inc. | Methode and techniques for improving display uniformity |
CA2669367A1 (en) | 2009-06-16 | 2010-12-16 | Ignis Innovation Inc | Compensation technique for color shift in displays |
US9384698B2 (en) | 2009-11-30 | 2016-07-05 | Ignis Innovation Inc. | System and methods for aging compensation in AMOLED displays |
JP2011013420A (ja) * | 2009-07-01 | 2011-01-20 | Seiko Epson Corp | 電気光学装置、その駆動方法および電子機器 |
US8576209B2 (en) | 2009-07-07 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8283967B2 (en) | 2009-11-12 | 2012-10-09 | Ignis Innovation Inc. | Stable current source for system integration to display substrate |
US10996258B2 (en) | 2009-11-30 | 2021-05-04 | Ignis Innovation Inc. | Defect detection and correction of pixel circuits for AMOLED displays |
US8803417B2 (en) | 2009-12-01 | 2014-08-12 | Ignis Innovation Inc. | High resolution pixel architecture |
CA2687631A1 (en) | 2009-12-06 | 2011-06-06 | Ignis Innovation Inc | Low power driving scheme for display applications |
US10176736B2 (en) | 2010-02-04 | 2019-01-08 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US20140313111A1 (en) | 2010-02-04 | 2014-10-23 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US9881532B2 (en) | 2010-02-04 | 2018-01-30 | Ignis Innovation Inc. | System and method for extracting correlation curves for an organic light emitting device |
CA2692097A1 (en) | 2010-02-04 | 2011-08-04 | Ignis Innovation Inc. | Extracting correlation curves for light emitting device |
US10163401B2 (en) | 2010-02-04 | 2018-12-25 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
KR100993093B1 (ko) * | 2010-02-04 | 2010-11-08 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US10089921B2 (en) | 2010-02-04 | 2018-10-02 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
CA2696778A1 (en) | 2010-03-17 | 2011-09-17 | Ignis Innovation Inc. | Lifetime, uniformity, parameter extraction methods |
TWI437342B (zh) * | 2010-05-21 | 2014-05-11 | Au Optronics Corp | 電泳顯示器及其畫素結構 |
US8907991B2 (en) | 2010-12-02 | 2014-12-09 | Ignis Innovation Inc. | System and methods for thermal compensation in AMOLED displays |
US8928010B2 (en) * | 2011-02-25 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9886899B2 (en) | 2011-05-17 | 2018-02-06 | Ignis Innovation Inc. | Pixel Circuits for AMOLED displays |
CN103688302B (zh) | 2011-05-17 | 2016-06-29 | 伊格尼斯创新公司 | 用于显示系统的使用动态功率控制的系统和方法 |
US9351368B2 (en) | 2013-03-08 | 2016-05-24 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US20140368491A1 (en) | 2013-03-08 | 2014-12-18 | Ignis Innovation Inc. | Pixel circuits for amoled displays |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
US9530349B2 (en) | 2011-05-20 | 2016-12-27 | Ignis Innovations Inc. | Charged-based compensation and parameter extraction in AMOLED displays |
US9466240B2 (en) | 2011-05-26 | 2016-10-11 | Ignis Innovation Inc. | Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed |
CN103562989B (zh) | 2011-05-27 | 2016-12-14 | 伊格尼斯创新公司 | 用于amoled显示器的老化补偿的系统和方法 |
CN103597534B (zh) | 2011-05-28 | 2017-02-15 | 伊格尼斯创新公司 | 用于快速补偿显示器中的像素的编程的系统和方法 |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
JP5909759B2 (ja) * | 2011-09-07 | 2016-04-27 | 株式会社Joled | 画素回路、表示パネル、表示装置および電子機器 |
US9324268B2 (en) | 2013-03-15 | 2016-04-26 | Ignis Innovation Inc. | Amoled displays with multiple readout circuits |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US8937632B2 (en) | 2012-02-03 | 2015-01-20 | Ignis Innovation Inc. | Driving system for active-matrix displays |
US9747834B2 (en) | 2012-05-11 | 2017-08-29 | Ignis Innovation Inc. | Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore |
US8922544B2 (en) | 2012-05-23 | 2014-12-30 | Ignis Innovation Inc. | Display systems with compensation for line propagation delay |
US9786223B2 (en) | 2012-12-11 | 2017-10-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9336717B2 (en) | 2012-12-11 | 2016-05-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9171504B2 (en) | 2013-01-14 | 2015-10-27 | Ignis Innovation Inc. | Driving scheme for emissive displays providing compensation for driving transistor variations |
US9830857B2 (en) | 2013-01-14 | 2017-11-28 | Ignis Innovation Inc. | Cleaning common unwanted signals from pixel measurements in emissive displays |
CA2894717A1 (en) | 2015-06-19 | 2016-12-19 | Ignis Innovation Inc. | Optoelectronic device characterization in array with shared sense line |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
EP2779147B1 (en) | 2013-03-14 | 2016-03-02 | Ignis Innovation Inc. | Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays |
WO2014140992A1 (en) | 2013-03-15 | 2014-09-18 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an amoled display |
DE112014002086T5 (de) | 2013-04-22 | 2016-01-14 | Ignis Innovation Inc. | Prüfsystem für OLED-Anzeigebildschirme |
CN103295962A (zh) | 2013-05-29 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法,显示装置 |
CN105474296B (zh) | 2013-08-12 | 2017-08-18 | 伊格尼斯创新公司 | 一种使用图像数据来驱动显示器的方法及装置 |
CN103926772B (zh) * | 2013-10-07 | 2018-01-23 | 上海天马微电子有限公司 | Tft阵列基板、显示面板和显示装置 |
JP6219696B2 (ja) | 2013-11-27 | 2017-10-25 | 株式会社ジャパンディスプレイ | 発光表示装置及び発光表示装置の製造方法 |
US9761170B2 (en) | 2013-12-06 | 2017-09-12 | Ignis Innovation Inc. | Correction for localized phenomena in an image array |
US9741282B2 (en) | 2013-12-06 | 2017-08-22 | Ignis Innovation Inc. | OLED display system and method |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
DE102015206281A1 (de) | 2014-04-08 | 2015-10-08 | Ignis Innovation Inc. | Anzeigesystem mit gemeinsam genutzten Niveauressourcen für tragbare Vorrichtungen |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
CA2873476A1 (en) | 2014-12-08 | 2016-06-08 | Ignis Innovation Inc. | Smart-pixel display architecture |
WO2016098651A1 (ja) * | 2014-12-16 | 2016-06-23 | シャープ株式会社 | 半導体装置、その製造方法、および半導体装置を備えた表示装置 |
CA2879462A1 (en) | 2015-01-23 | 2016-07-23 | Ignis Innovation Inc. | Compensation for color variation in emissive devices |
CA2886862A1 (en) | 2015-04-01 | 2016-10-01 | Ignis Innovation Inc. | Adjusting display brightness for avoiding overheating and/or accelerated aging |
CA2889870A1 (en) | 2015-05-04 | 2016-11-04 | Ignis Innovation Inc. | Optical feedback system |
CA2892714A1 (en) | 2015-05-27 | 2016-11-27 | Ignis Innovation Inc | Memory bandwidth reduction in compensation system |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2900170A1 (en) | 2015-08-07 | 2017-02-07 | Gholamreza Chaji | Calibration of pixel based on improved reference values |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
JP6746421B2 (ja) * | 2016-07-29 | 2020-08-26 | キヤノン株式会社 | 撮像装置 |
US10586491B2 (en) | 2016-12-06 | 2020-03-10 | Ignis Innovation Inc. | Pixel circuits for mitigation of hysteresis |
KR102352809B1 (ko) * | 2017-03-31 | 2022-01-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 표시 장치 |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
CN114725172A (zh) | 2019-11-28 | 2022-07-08 | 京东方科技集团股份有限公司 | 显示基板、显示面板和装置 |
EP4097710A1 (en) * | 2020-01-28 | 2022-12-07 | OLEDWorks LLC | Oled display with protection circuit |
CN112103319B (zh) * | 2020-09-22 | 2024-06-18 | 京东方科技集团股份有限公司 | 显示面板、显示装置及显示面板的制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53116742A (en) * | 1977-03-22 | 1978-10-12 | Westinghouse Electric Corp | Display panel unit |
JPH0757871A (ja) * | 1993-08-19 | 1995-03-03 | Hitachi Ltd | 電場発光表示装置 |
JPH07111341A (ja) * | 1993-10-12 | 1995-04-25 | Nec Corp | 電流制御型発光素子アレイ |
JPH0981053A (ja) * | 1995-09-07 | 1997-03-28 | Casio Comput Co Ltd | 電界発光素子及びその駆動方法 |
JPH10161564A (ja) * | 1996-11-28 | 1998-06-19 | Casio Comput Co Ltd | 表示装置 |
JPH1195256A (ja) * | 1997-09-25 | 1999-04-09 | Sharp Corp | アクティブマトリクス基板 |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5729655B2 (ja) * | 1974-06-06 | 1982-06-24 | ||
FR2488016A1 (fr) * | 1980-07-29 | 1982-02-05 | Thomson Csf | Module elementaire pour panneau d'affichage matriciel et panneau d'affichage comportant un tel module |
JPS57128394A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Indicator |
JPS5999480A (ja) * | 1982-11-29 | 1984-06-08 | 日本電信電話株式会社 | 表示器 |
JPH02246264A (ja) * | 1989-03-20 | 1990-10-02 | Hitachi Ltd | 半導体装置およびその製造方法 |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
JP2831808B2 (ja) | 1990-06-12 | 1998-12-02 | ダイセル化学工業株式会社 | ラセミβ−ラクタム類の光学分割法 |
JPH04124837A (ja) * | 1990-09-14 | 1992-04-24 | Seiko Epson Corp | 半導体装置 |
JP2873632B2 (ja) * | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3071851B2 (ja) * | 1991-03-25 | 2000-07-31 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
JPH05267343A (ja) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
US5587329A (en) * | 1994-08-24 | 1996-12-24 | David Sarnoff Research Center, Inc. | Method for fabricating a switching transistor having a capacitive network proximate a drift region |
US6104041A (en) * | 1994-08-24 | 2000-08-15 | Sarnoff Corporation | Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors |
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
JP2800730B2 (ja) * | 1995-08-17 | 1998-09-21 | 日本電気株式会社 | 半導体記憶装置 |
KR100205388B1 (ko) * | 1995-09-12 | 1999-07-01 | 구자홍 | 액정표시장치 및 그 제조방법 |
KR100205373B1 (ko) * | 1996-06-11 | 1999-07-01 | 구자홍 | 액정표시소자의 제조방법 |
DE69735022T2 (de) * | 1996-09-19 | 2006-08-10 | Seiko Epson Corp. | Verfahren zur Herstellung einer Matrixanzeigevorrichtung |
WO1998013811A1 (en) * | 1996-09-26 | 1998-04-02 | Seiko Epson Corporation | Display device |
JP3672136B2 (ja) | 1996-10-04 | 2005-07-13 | 株式会社アドバンテスト | Ic試験装置 |
JP4032443B2 (ja) * | 1996-10-09 | 2008-01-16 | セイコーエプソン株式会社 | 薄膜トランジスタ、回路、アクティブマトリクス基板、液晶表示装置 |
DE69739633D1 (de) | 1996-11-28 | 2009-12-10 | Casio Computer Co Ltd | Anzeigevorrichtung |
KR100229678B1 (ko) * | 1996-12-06 | 1999-11-15 | 구자홍 | 박막트랜지스터 및 그의 제조방법 |
JP3641342B2 (ja) * | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
JPH1165471A (ja) * | 1997-08-20 | 1999-03-05 | Semiconductor Energy Lab Co Ltd | 電気光学装置 |
JPH11223831A (ja) * | 1998-02-06 | 1999-08-17 | Matsushita Electric Ind Co Ltd | 表示装置およびその製造方法 |
JPH11231805A (ja) * | 1998-02-10 | 1999-08-27 | Sanyo Electric Co Ltd | 表示装置 |
KR100637433B1 (ko) * | 2004-05-24 | 2006-10-20 | 삼성에스디아이 주식회사 | 발광 표시 장치 |
JP3844588B2 (ja) * | 1998-03-05 | 2006-11-15 | 富士通株式会社 | 情報管理システム、ローカルコンピュータ、及び情報取得プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JPH11345887A (ja) * | 1998-03-31 | 1999-12-14 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP4021053B2 (ja) * | 1998-05-16 | 2007-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
GB9812739D0 (en) | 1998-06-12 | 1998-08-12 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display devices |
GB9812742D0 (en) | 1998-06-12 | 1998-08-12 | Philips Electronics Nv | Active matrix electroluminescent display devices |
JP2000003140A (ja) * | 1998-06-12 | 2000-01-07 | Tdk Corp | 有機elディスプレイ |
JP2000200838A (ja) * | 1998-10-30 | 2000-07-18 | Seiko Epson Corp | 半導体記憶装置およびその製造方法 |
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6545359B1 (en) * | 1998-12-18 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof |
EP1020920B1 (en) * | 1999-01-11 | 2010-06-02 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a driver TFT and a pixel TFT on a common substrate |
US6576924B1 (en) * | 1999-02-12 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate |
JP2000267093A (ja) * | 1999-03-19 | 2000-09-29 | Matsushita Electric Ind Co Ltd | 照明装置およびこれを備えた携帯情報機器 |
JP4092857B2 (ja) | 1999-06-17 | 2008-05-28 | ソニー株式会社 | 画像表示装置 |
JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2001042822A (ja) | 1999-08-03 | 2001-02-16 | Pioneer Electronic Corp | アクティブマトリクス型表示装置 |
US6587086B1 (en) * | 1999-10-26 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
TW525122B (en) | 1999-11-29 | 2003-03-21 | Semiconductor Energy Lab | Electronic device |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
JP4831862B2 (ja) | 1999-11-30 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 電子装置 |
TW493152B (en) * | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
TW480727B (en) * | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
JP4212079B2 (ja) * | 2000-01-11 | 2009-01-21 | ローム株式会社 | 表示装置およびその駆動方法 |
TWI252592B (en) * | 2000-01-17 | 2006-04-01 | Semiconductor Energy Lab | EL display device |
TW521303B (en) * | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
TW507258B (en) * | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
JP2001318627A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2001324958A (ja) | 2000-03-10 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 電子装置およびその駆動方法 |
US7129918B2 (en) | 2000-03-10 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving electronic device |
JP4954380B2 (ja) * | 2000-03-27 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 発光装置、半導体装置 |
TW521226B (en) * | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
JP3953715B2 (ja) * | 2000-07-31 | 2007-08-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
TW466888B (en) * | 2000-09-29 | 2001-12-01 | Ind Tech Res Inst | Pixel device structure and process of organic light emitting diode display |
KR100484591B1 (ko) * | 2001-12-29 | 2005-04-20 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
US6835954B2 (en) * | 2001-12-29 | 2004-12-28 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device |
TWI255432B (en) * | 2002-06-03 | 2006-05-21 | Lg Philips Lcd Co Ltd | Active matrix organic electroluminescent display device and fabricating method thereof |
-
2001
- 2001-03-08 TW TW090105441A patent/TW521226B/zh not_active IP Right Cessation
- 2001-03-26 US US09/818,191 patent/US6475845B2/en not_active Expired - Lifetime
- 2001-03-27 CN CN2007101658812A patent/CN101154350B/zh not_active Expired - Fee Related
- 2001-03-27 KR KR1020010015885A patent/KR100802344B1/ko not_active IP Right Cessation
- 2001-03-27 CN CNB011120746A patent/CN100359691C/zh not_active Expired - Fee Related
- 2001-03-27 EP EP01107621A patent/EP1139454A3/en not_active Withdrawn
-
2002
- 2002-11-05 US US10/289,511 patent/US6958489B2/en not_active Expired - Lifetime
-
2004
- 2004-09-21 US US10/944,946 patent/US7012290B2/en not_active Expired - Fee Related
-
2006
- 2006-01-09 US US11/327,650 patent/US7592652B2/en not_active Expired - Fee Related
-
2009
- 2009-09-01 US US12/551,586 patent/US8237186B2/en not_active Expired - Lifetime
-
2011
- 2011-01-11 JP JP2011003121A patent/JP5089782B2/ja not_active Expired - Lifetime
- 2011-12-14 JP JP2011272981A patent/JP5292452B2/ja not_active Expired - Lifetime
-
2012
- 2012-08-01 US US13/563,796 patent/US8541804B2/en not_active Expired - Fee Related
-
2013
- 2013-01-24 JP JP2013011024A patent/JP5487337B2/ja not_active Expired - Fee Related
- 2013-01-24 JP JP2013011026A patent/JP5823995B2/ja not_active Expired - Lifetime
- 2013-01-24 JP JP2013011025A patent/JP5386646B2/ja not_active Expired - Lifetime
-
2014
- 2014-03-26 JP JP2014063187A patent/JP2014112268A/ja not_active Withdrawn
-
2015
- 2015-08-06 JP JP2015155970A patent/JP2015232724A/ja not_active Withdrawn
- 2015-08-06 JP JP2015155969A patent/JP5917755B2/ja not_active Expired - Lifetime
-
2017
- 2017-04-17 JP JP2017081074A patent/JP6603680B2/ja not_active Expired - Lifetime
-
2018
- 2018-11-29 JP JP2018223032A patent/JP6695407B2/ja not_active Expired - Lifetime
-
2020
- 2020-03-03 JP JP2020035792A patent/JP2020144365A/ja not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53116742A (en) * | 1977-03-22 | 1978-10-12 | Westinghouse Electric Corp | Display panel unit |
JPH0757871A (ja) * | 1993-08-19 | 1995-03-03 | Hitachi Ltd | 電場発光表示装置 |
JPH07111341A (ja) * | 1993-10-12 | 1995-04-25 | Nec Corp | 電流制御型発光素子アレイ |
JPH0981053A (ja) * | 1995-09-07 | 1997-03-28 | Casio Comput Co Ltd | 電界発光素子及びその駆動方法 |
JPH10161564A (ja) * | 1996-11-28 | 1998-06-19 | Casio Comput Co Ltd | 表示装置 |
JPH1195256A (ja) * | 1997-09-25 | 1999-04-09 | Sharp Corp | アクティブマトリクス基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101470968B1 (ko) * | 2013-11-01 | 2014-12-09 | 호서대학교 산학협력단 | Vdd 전원 라인 없이 문턱전압과 전압강하를 보상하는 유기발광 다이오드 화소 회로 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6603680B2 (ja) | 発光装置 | |
JP6651587B2 (ja) | 表示装置 | |
JP6474433B2 (ja) | 表示装置 | |
JP5315403B2 (ja) | 電子装置及び電子機器 | |
JP4954380B2 (ja) | 発光装置、半導体装置 | |
JP4963145B2 (ja) | 電子装置及び電子機器 | |
JP5127099B2 (ja) | 電子装置、表示装置 | |
JP4798865B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130125 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5292452 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |