JP2012084858A - 半導体装置、パワーダイオード及び整流器 - Google Patents

半導体装置、パワーダイオード及び整流器 Download PDF

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Publication number
JP2012084858A
JP2012084858A JP2011196456A JP2011196456A JP2012084858A JP 2012084858 A JP2012084858 A JP 2012084858A JP 2011196456 A JP2011196456 A JP 2011196456A JP 2011196456 A JP2011196456 A JP 2011196456A JP 2012084858 A JP2012084858 A JP 2012084858A
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Japan
Prior art keywords
oxide semiconductor
electrode
semiconductor layer
electrodes
insulating layer
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JP2011196456A
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English (en)
Japanese (ja)
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JP2012084858A5 (ja
Inventor
Shunpei Yamazaki
舜平 山崎
Hiromitsu Goto
宏充 郷戸
Satoshi Kobayashi
聡 小林
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011196456A priority Critical patent/JP2012084858A/ja
Publication of JP2012084858A publication Critical patent/JP2012084858A/ja
Publication of JP2012084858A5 publication Critical patent/JP2012084858A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011196456A 2010-09-13 2011-09-08 半導体装置、パワーダイオード及び整流器 Withdrawn JP2012084858A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011196456A JP2012084858A (ja) 2010-09-13 2011-09-08 半導体装置、パワーダイオード及び整流器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010204693 2010-09-13
JP2010204693 2010-09-13
JP2011196456A JP2012084858A (ja) 2010-09-13 2011-09-08 半導体装置、パワーダイオード及び整流器

Related Child Applications (1)

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JP2016223200A Division JP2017059842A (ja) 2010-09-13 2016-11-16 半導体装置

Publications (2)

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JP2012084858A true JP2012084858A (ja) 2012-04-26
JP2012084858A5 JP2012084858A5 (ja) 2014-10-02

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JP2011196456A Withdrawn JP2012084858A (ja) 2010-09-13 2011-09-08 半導体装置、パワーダイオード及び整流器
JP2016223200A Withdrawn JP2017059842A (ja) 2010-09-13 2016-11-16 半導体装置
JP2018218261A Active JP6653746B2 (ja) 2010-09-13 2018-11-21 半導体装置
JP2020011844A Active JP6982638B2 (ja) 2010-09-13 2020-01-28 半導体装置
JP2021188285A Withdrawn JP2022010406A (ja) 2010-09-13 2021-11-19 半導体装置
JP2023171077A Withdrawn JP2023166002A (ja) 2010-09-13 2023-10-02 半導体装置
JP2025026761A Pending JP2025075083A (ja) 2010-09-13 2025-02-21 半導体装置

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JP2016223200A Withdrawn JP2017059842A (ja) 2010-09-13 2016-11-16 半導体装置
JP2018218261A Active JP6653746B2 (ja) 2010-09-13 2018-11-21 半導体装置
JP2020011844A Active JP6982638B2 (ja) 2010-09-13 2020-01-28 半導体装置
JP2021188285A Withdrawn JP2022010406A (ja) 2010-09-13 2021-11-19 半導体装置
JP2023171077A Withdrawn JP2023166002A (ja) 2010-09-13 2023-10-02 半導体装置
JP2025026761A Pending JP2025075083A (ja) 2010-09-13 2025-02-21 半導体装置

Country Status (4)

Country Link
US (8) US8835917B2 (https=)
JP (7) JP2012084858A (https=)
KR (6) KR101952091B1 (https=)
TW (3) TWI535013B (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013180040A1 (en) * 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014022615A (ja) * 2012-07-20 2014-02-03 Semiconductor Energy Lab Co Ltd 半導体装置
WO2014087829A1 (ja) * 2012-12-06 2014-06-12 富士フイルム株式会社 薄膜トランジスタ及びその製造方法
KR20150007958A (ko) * 2013-07-12 2015-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8952381B2 (en) 2012-06-29 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015084412A (ja) * 2013-09-17 2015-04-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2015195380A (ja) * 2014-03-28 2015-11-05 株式会社半導体エネルギー研究所 トランジスタおよび半導体装置
KR20150131978A (ko) * 2014-05-15 2015-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
US9660093B2 (en) 2012-10-17 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Transistor with multilayer film including oxide semiconductor layer and oxide layer
JP2018195837A (ja) * 2013-10-22 2018-12-06 株式会社半導体エネルギー研究所 半導体装置
JP2019036741A (ja) * 2013-09-05 2019-03-07 株式会社半導体エネルギー研究所 半導体装置
JP2019204976A (ja) * 2013-06-05 2019-11-28 株式会社半導体エネルギー研究所 半導体装置
JP2020004987A (ja) * 2013-09-13 2020-01-09 株式会社半導体エネルギー研究所 半導体装置
JP2021052203A (ja) * 2013-08-19 2021-04-01 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JP2022022331A (ja) * 2013-05-16 2022-02-03 株式会社半導体エネルギー研究所 半導体装置
JP2025028898A (ja) * 2012-07-20 2025-03-05 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9029863B2 (en) * 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20140009023A (ko) * 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
TWI605593B (zh) * 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
TWI538220B (zh) * 2012-11-21 2016-06-11 元太科技工業股份有限公司 薄膜電晶體與其製造方法
DE102014208859B4 (de) * 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
WO2015046791A1 (ko) * 2013-09-26 2015-04-02 주식회사 실리콘웍스 반도체 정류 디바이스 및 그의 제조 방법
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
WO2015160152A1 (ko) * 2014-04-18 2015-10-22 한양대학교 산학협력단 정류 다이오드 및 그 제조방법
CN104319279B (zh) * 2014-11-10 2017-11-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
US9793254B2 (en) 2014-12-09 2017-10-17 Alpha And Omega Semiconductor Incorporated TVS structures for high surge and low capacitance
US20160190338A1 (en) * 2014-12-26 2016-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI695513B (zh) * 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP2019067938A (ja) * 2017-10-02 2019-04-25 シャープ株式会社 薄膜トランジスタ
JP7391297B2 (ja) 2019-06-28 2023-12-05 株式会社Flosfia エッチング処理方法およびエッチング処理装置
CN114730807A (zh) 2019-11-29 2022-07-08 株式会社半导体能源研究所 半导体装置、显示装置及电子设备
WO2021116828A1 (ja) 2019-12-13 2021-06-17 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
RU208280U1 (ru) * 2020-05-07 2021-12-13 Акционерное общество "ВЗПП-Микрон" Защитное покрытие полупроводникового прибора
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
JP2023007092A (ja) * 2021-07-01 2023-01-18 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090152506A1 (en) * 2007-12-17 2009-06-18 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP2010040815A (ja) * 2008-08-06 2010-02-18 Sony Corp 縦型電界効果トランジスタ及び画像表示装置
US20100102313A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010058746A1 (en) * 2008-11-21 2010-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (179)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP2000026119A (ja) 1998-07-09 2000-01-25 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000133819A (ja) 1998-10-27 2000-05-12 Fuji Electric Co Ltd 炭化けい素ショットキーバリアダイオードおよびその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2000228516A (ja) * 1999-02-08 2000-08-15 Tdk Corp 半導体積層薄膜、電子デバイスおよびダイオード
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
KR20020057382A (ko) * 2001-01-04 2002-07-11 주승기 반도체 소자 제조 방법 및 장치
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4474900B2 (ja) * 2003-10-29 2010-06-09 カシオ計算機株式会社 静電気保護回路およびそれを備えた電子回路
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
KR20060070349A (ko) 2004-12-20 2006-06-23 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101085142B1 (ko) * 2004-12-24 2011-11-21 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
GB0501733D0 (en) 2005-01-27 2005-03-02 British American Tobacco Co Packages
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7858415B2 (en) * 2005-04-28 2010-12-28 Sharp Kabushiki Kaisha Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US7737442B2 (en) * 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP4039446B2 (ja) * 2005-08-02 2008-01-30 エプソンイメージングデバイス株式会社 電気光学装置及び電子機器
EP1938386B1 (en) 2005-08-09 2019-05-01 Cambridge Enterprise Limited Nanorod thin-film transistors
GB0516401D0 (en) 2005-08-09 2005-09-14 Univ Cambridge Tech Nanorod field-effect transistors
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5250929B2 (ja) * 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP5015472B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
WO2007110940A1 (ja) 2006-03-29 2007-10-04 Fujitsu Limited 半導体装置及びその製造方法
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
EP1909384A3 (en) * 2006-10-06 2015-11-25 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit with variable capacitor, semiconductor device using the circuit, and driving method therefor
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5064094B2 (ja) 2007-04-16 2012-10-31 パナソニック株式会社 半導体記憶装置およびその製造方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
EP2153468B1 (en) 2007-05-31 2010-12-01 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
WO2009060922A1 (en) * 2007-11-05 2009-05-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device having the thin film transistor
JP5264197B2 (ja) 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
US8586979B2 (en) 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
KR100941850B1 (ko) 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5510767B2 (ja) 2008-06-19 2014-06-04 出光興産株式会社 薄膜トランジスタおよびその製造方法
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2010021170A (ja) * 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法
TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9000441B2 (en) 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5442228B2 (ja) 2008-08-07 2014-03-12 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
KR101497425B1 (ko) 2008-08-28 2015-03-03 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5537787B2 (ja) 2008-09-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010032386A1 (ja) * 2008-09-17 2010-03-25 シャープ株式会社 半導体装置
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR101273913B1 (ko) 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101803720B1 (ko) 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101667909B1 (ko) * 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101634411B1 (ko) 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
TWI589006B (zh) 2008-11-07 2017-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101547326B1 (ko) 2008-12-04 2015-08-26 삼성전자주식회사 트랜지스터 및 그 제조방법
JP5606682B2 (ja) 2009-01-29 2014-10-15 富士フイルム株式会社 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI489628B (zh) * 2009-04-02 2015-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP4571221B1 (ja) 2009-06-22 2010-10-27 富士フイルム株式会社 Ｉｇｚｏ系酸化物材料及びｉｇｚｏ系酸化物材料の製造方法
JP4415062B1 (ja) 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR101422362B1 (ko) * 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
JP2011071476A (ja) 2009-08-25 2011-04-07 Canon Inc 薄膜トランジスタ、薄膜トランジスタを用いた表示装置及び薄膜トランジスタの製造方法
KR20220127372A (ko) * 2009-09-24 2022-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101876473B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
KR102581069B1 (ko) 2010-02-05 2023-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
JP5740169B2 (ja) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
WO2011132548A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI621184B (zh) * 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101597886B1 (ko) 2011-04-18 2016-02-26 샤프 가부시키가이샤 박막 트랜지스터, 표시패널 및 박막 트랜지스터의 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090152506A1 (en) * 2007-12-17 2009-06-18 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP2009167087A (ja) * 2007-12-17 2009-07-30 Fujifilm Corp 無機結晶性配向膜及びその製造方法、半導体デバイス
JP2010040815A (ja) * 2008-08-06 2010-02-18 Sony Corp 縦型電界効果トランジスタ及び画像表示装置
US20100102313A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2010123938A (ja) * 2008-10-24 2010-06-03 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2010058746A1 (en) * 2008-11-21 2010-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010153828A (ja) * 2008-11-21 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741865B2 (en) 2012-05-31 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Method of forming semiconductor device including oxide semiconductor stack with different ratio of indium and gallium
US9496408B2 (en) 2012-05-31 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium
WO2013180040A1 (en) * 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9899536B2 (en) 2012-05-31 2018-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of forming semiconductor device with different energy gap oxide semiconductor stacked layers
US10424673B2 (en) 2012-06-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a stack of oxide semiconductor layers
US9666721B2 (en) 2012-06-29 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including pellet-like particle or flat-plate-like particle
US8952381B2 (en) 2012-06-29 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2025028898A (ja) * 2012-07-20 2025-03-05 株式会社半導体エネルギー研究所 半導体装置
JP7762282B2 (ja) 2012-07-20 2025-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2014022615A (ja) * 2012-07-20 2014-02-03 Semiconductor Energy Lab Co Ltd 半導体装置
US10217796B2 (en) 2012-10-17 2019-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide layer and an oxide semiconductor layer
US9660093B2 (en) 2012-10-17 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Transistor with multilayer film including oxide semiconductor layer and oxide layer
JP2014116372A (ja) * 2012-12-06 2014-06-26 Fujifilm Corp 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ
WO2014087829A1 (ja) * 2012-12-06 2014-06-12 富士フイルム株式会社 薄膜トランジスタ及びその製造方法
TWI601212B (zh) * 2012-12-06 2017-10-01 富士軟片股份有限公司 薄膜電晶體及其製造方法、結晶性氧化物半導體薄膜及其製造方法、顯示裝置及ｘ線感測器
JP2025074140A (ja) * 2013-05-16 2025-05-13 株式会社半導体エネルギー研究所 半導体装置
JP7642739B2 (ja) 2013-05-16 2025-03-10 株式会社半導体エネルギー研究所 半導体装置
JP2023129724A (ja) * 2013-05-16 2023-09-14 株式会社半導体エネルギー研究所 半導体装置
JP7324826B2 (ja) 2013-05-16 2023-08-10 株式会社半導体エネルギー研究所 半導体装置
JP2022022331A (ja) * 2013-05-16 2022-02-03 株式会社半導体エネルギー研究所 半導体装置
JP2019204976A (ja) * 2013-06-05 2019-11-28 株式会社半導体エネルギー研究所 半導体装置
KR102329144B1 (ko) * 2013-07-12 2021-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20150007958A (ko) * 2013-07-12 2015-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US11769840B2 (en) 2013-08-19 2023-09-26 Idemitsu Kosan Co., Ltd. Oxide semiconductor substrate and schottky barrier diode
JP7084465B2 (ja) 2013-08-19 2022-06-14 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JP2021052203A (ja) * 2013-08-19 2021-04-01 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JP2019036741A (ja) * 2013-09-05 2019-03-07 株式会社半導体エネルギー研究所 半導体装置
US10446551B2 (en) 2013-09-05 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020004987A (ja) * 2013-09-13 2020-01-09 株式会社半導体エネルギー研究所 半導体装置
JP2015084412A (ja) * 2013-09-17 2015-04-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2022118030A (ja) * 2013-10-22 2022-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2018195837A (ja) * 2013-10-22 2018-12-06 株式会社半導体エネルギー研究所 半導体装置
JP7202494B2 (ja) 2013-10-22 2023-01-11 株式会社半導体エネルギー研究所 半導体装置
US12199187B2 (en) 2014-03-28 2025-01-14 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US10236392B2 (en) 2014-03-28 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US10833203B2 (en) 2014-03-28 2020-11-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
JP2015195380A (ja) * 2014-03-28 2015-11-05 株式会社半導体エネルギー研究所 トランジスタおよび半導体装置
US11581440B2 (en) 2014-03-28 2023-02-14 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US11177392B2 (en) 2014-03-28 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US11888073B2 (en) 2014-03-28 2024-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US10566460B2 (en) 2014-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
KR102333604B1 (ko) * 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
KR102596645B1 (ko) * 2014-05-15 2023-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP2019195101A (ja) * 2014-05-15 2019-11-07 株式会社半導体エネルギー研究所 半導体装置
US11594642B2 (en) 2014-05-15 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device including back gate comprising oxide semiconductor material
JP2015233135A (ja) * 2014-05-15 2015-12-24 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置
KR20150131978A (ko) * 2014-05-15 2015-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
KR20210148041A (ko) * 2014-05-15 2021-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
US10998448B2 (en) 2014-05-15 2021-05-04 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device including back gate comprising oxide semiconductor material

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