JP2011018924A - リードフレーム構造を含む半導体ダイパッケージ及びその製造方法 - Google Patents
リードフレーム構造を含む半導体ダイパッケージ及びその製造方法 Download PDFInfo
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Abstract
【解決手段】半導体ダイパッケージが開示されている。1つの実施例において、該半導体ダイパッケージは基板40を有する。この基板は、(i)ダイ取付表面を有するダイ取付領域12とリード表面を有するリードとを含むリードフレーム構造10、及び(ii)モールド材20を含む。該ダイ取付表面及び該リード表面がモールド材を介して露出せしめられる。半導体ダイが該ダイ取付領域上に配置され、該半導体ダイが該リードに電気的に結合される。
【選択図】図1
Description
図5(a)に示される基板の実施例は図5(b)に示される基板の実施例よりもより薄い。これは、例えば仮に形成された半導体ダイパッケージが携帯電話やノートブック型コンピュータの如き薄いデバイスに使用されるべき場合に、望ましい。
Claims (19)
- (a)(i)リード表面を有するリードを含むリードフレーム構造と(ii)モールド材とを含んで前記リード表面が前記モールド材を介して露出されている基板と、
(b)前記基板上の半導体ダイと、からなり、
前記半導体ダイは前記リードと電気的に結合されており、
前記リードはソースリードでありかつ前記リード表面はソースリード表面であり、前記リードフレーム構造はゲートリード表面を有するゲートリードも含み、前記ゲートリード表面は前記モールド材を介して露出させられていることを特徴とする半導体ダイパッケージ。 - 請求項1に記載の半導体ダイパッケージであって、前記リードフレーム構造がダイ取付表面を有するダイ取付領域を含み、前記半導体ダイが前記ダイ取付領域に電気的に結合されていることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記モールド材が前記リードフレーム構造の厚さと実質的に同一の厚さを有していることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記半導体ダイが、前記半導体ダイの一方の面においてソース領域及びゲート領域を有しかつ前記半導体ダイの他方の面においてドレイン領域を有している縦型MOSFETを含んでいることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記半導体ダイが、前記半導体ダイの一方の面においてソース領域及びゲート領域を有しかつ前記半導体ダイの他方の面においてドレイン領域を有している縦型MOSFETを含み、前記ソース領域及び前記ゲート領域が前記基板に対して近位側にあり、前記ドレイン領域が前記基板に対して遠位側にあることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記リードフレーム構造がダイ取付表面を有するダイ取付領域を含み、前記ダイ取付表面及び前記リード表面が同一平面内にあることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記ゲートリード及び前記ソースリード上にはんだ構造をさらに含むことを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記半導体ダイが、前記半導体ダイの一方の面においてソース領域及びゲート領域を有しかつ前記半導体ダイの他方の面においてドレイン領域を有している縦型MOSFETを含み、前記ソース領域は前記ソースリードに電気的に結合されており、前記ゲート領域は前記ゲートリードに電気的に結合されていることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記半導体ダイが、前記半導体ダイの一方の面においてソース領域及びゲート領域を有しかつ前記半導体ダイの他方の面においてドレイン領域を有している縦型MOSFETを含み、前記ソース領域は前記ソースリードに電気的に結合されており、前記ゲート領域は前記ゲートリードに電気に結合されており、前記モールド材の厚さが前記リードフレーム構造の厚さと実質的に同一であることを特徴とする半導体ダイパッケージ。
- 請求項1に記載の半導体ダイパッケージであって、前記リードフレーム構造がダイ取付領域を含み、前記ダイ取付領域は、前記ダイ取付領域と反対側の前記リードフレーム構造の面の面積よりも大きい面積を有するダイ取付表面を含んでいることを特徴とする半導体ダイパッケージ。
- リードフレーム構造を処理する方法であって、
(a)テープ構造に取り付けられているリード表面を含むリードを有するリードフレーム構造を提供するステップと、
(b)前記テープ構造と反対側の前記リードフレーム構造の面にモールド材を堆積させるステップと、
(c)前記モールド材を硬化させるステップと、
(d)前記リードフレーム構造及び当該硬化されたモールド材から前記テープ構造を除去することによって前記リード表面を露出させるステップと、を含み、
前記リード表面が前記テープ構造に近接しており、前記リードがソースリードでありかつ前記リード表面がソースリード表面であり、前記リードフレーム構造はゲートリード表面を有するゲートリードを含み、前記ゲートリード表面は前記モールド材を介して露出させられることを特徴とする方法。 - 請求項11に記載の方法であって、前記リードフレーム構造が配列されて互いに結合させられている複数のリードフレーム構造のうちの1つであることを特徴とする方法。
- 請求項11に記載の方法であって、前記堆積させるステップの後に、余分なモールド材を除去して残ったモールド材が前記リードフレーム構造の厚さと実質的に同一な厚さを有するようにするステップをさらに含むことを特徴とする方法。
- 請求項11に記載の方法であって、前記ソースリードまたは前記ゲートリードへの連結バーを切断して前記ソースリード及び前記ゲートリードを電気的に絶縁するステップをさらに含むことを特徴とする方法。
- 請求項11に記載の方法であって、前記ダイ取付表面に半導体ダイを取り付けるステップをさらに含み、前記半導体ダイが縦型MOSFETを含むことを特徴とする方法。
- 半導体ダイパッケージを形成する方法であって、
(a)(i)リード表面を有するリードを含むリードフレーム構造と(ii)モールド材とを含んで前記リード表面が前記モールド材を介して露出させられている基板を得るステップと、
(b)前記基板に半導体ダイを取り付けるステップと、を含み、
前記半導体ダイが前記リードに電気的に結合され、前記リードがソースリードでありかつ前記リード表面がソースリード表面であり、前記リードフレーム構造がゲートリード表面を有するゲートリードを含み、前記ゲートリード表面が前記モールド材を介して露出させられることを特徴とする方法。 - 請求項16に記載の方法であって、前記リードフレーム構造がダイ取付表面を有するダイ取付領域を含み、ステップ(b)の後に、前記半導体ダイが前記ダイ取付領域に電気的に結合されることを特徴とする方法。
- 請求項16に記載の方法であって、前記モールド材の厚さが前記リードフレーム構造の厚さと実質的に同一であることを特徴とする方法。
- 請求項16に記載の方法であって、前記半導体ダイが、前記半導体ダイの一方の面においてソース領域及びゲート領域を有しかつ前記半導体ダイの他方の面においてドレイン領域を有している縦型MOSFETを含むことを特徴とする方法。
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TW200408084A (en) | 2004-05-16 |
CN1679162B (zh) | 2010-06-02 |
US8541890B2 (en) | 2013-09-24 |
US7682877B2 (en) | 2010-03-23 |
US7061077B2 (en) | 2006-06-13 |
US20060006550A1 (en) | 2006-01-12 |
WO2004021400A2 (en) | 2004-03-11 |
TW200539401A (en) | 2005-12-01 |
US20040207052A1 (en) | 2004-10-21 |
JP2005537664A (ja) | 2005-12-08 |
TWI267176B (en) | 2006-11-21 |
US20090130802A1 (en) | 2009-05-21 |
US20060003492A1 (en) | 2006-01-05 |
US20040041242A1 (en) | 2004-03-04 |
US7790513B2 (en) | 2010-09-07 |
US7504281B2 (en) | 2009-03-17 |
DE10393164T5 (de) | 2005-08-18 |
TWI266393B (en) | 2006-11-11 |
CN1679162A (zh) | 2005-10-05 |
CN101685811A (zh) | 2010-03-31 |
US7439613B2 (en) | 2008-10-21 |
KR101037997B1 (ko) | 2011-05-30 |
AU2003257046A1 (en) | 2004-03-19 |
MY149851A (en) | 2013-10-31 |
KR20050039833A (ko) | 2005-04-29 |
US20080213946A1 (en) | 2008-09-04 |
JP4634146B2 (ja) | 2011-02-16 |
CN101685811B (zh) | 2012-12-05 |
WO2004021400A3 (en) | 2004-06-17 |
AU2003257046A8 (en) | 2004-03-19 |
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