JP2010517271A5 - - Google Patents

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Publication number
JP2010517271A5
JP2010517271A5 JP2009546463A JP2009546463A JP2010517271A5 JP 2010517271 A5 JP2010517271 A5 JP 2010517271A5 JP 2009546463 A JP2009546463 A JP 2009546463A JP 2009546463 A JP2009546463 A JP 2009546463A JP 2010517271 A5 JP2010517271 A5 JP 2010517271A5
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Prior art keywords
silicon layer
pin junction
amorphous silicon
type
layer
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JP2009546463A
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JP2010517271A (ja
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Priority claimed from US11/624,677 external-priority patent/US20080173350A1/en
Priority claimed from US11/671,988 external-priority patent/US7582515B2/en
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Publication of JP2010517271A publication Critical patent/JP2010517271A/ja
Publication of JP2010517271A5 publication Critical patent/JP2010517271A5/ja
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Claims (19)

  1. 基板の上に多接合薄膜太陽電池を形成する方法であって：
    第一ｐ-ｉ-ｎ接合部を形成するステップであって：
    ｐ型アモルファスシリコン層を形成する工程と；
    該ｐ型アモルファスシリコン層の上に真性型アモルファスシリコン層を形成する工程と
    ；
    該真性型アモルファスシリコン層の上にｎ型微結晶シリコン層を形成する工程と；
    を含む、前記ステップと；
    該第一ｐ-ｉ-ｎ接合部の上に第二ｐ-ｉ-ｎ接合部を形成するステップであって：
    ｐ型微結晶シリコン層を形成する工程と；
    該ｐ型微結晶シリコン層の上に真性型微結晶シリコン層を形成する工程と；
    該真性型微結晶層の上にｎ型アモルファスシリコン層を形成する工程と；
    を含む、前記ステップと；
    を含む、前記方法。
  2. 該第一ｐ-ｉ-ｎ接合部を形成するステップが、該真性型アモルファスシリコン層と該ｎ型微結晶シリコン層の間にｎ型アモルファスシリコンバッファ層を形成する工程を更に含む、請求項１に記載の方法。
  3. 該第一ｐ-ｉ-ｎ接合部が、酸化亜鉛透明導電性酸化物層の上に形成される、請求項１に記載の方法。
  4. 該第一ｐ-ｉ-ｎ接合部が、該酸化亜鉛透明導電性酸化物層と該ｐ型アモルファスシリコン層の間に形成されたｐ型微結晶コンタクト層を更に備える、請求項３に記載の方法。
  5. 該第一ｐ-ｉ-ｎ接合部の該ｐ型アモルファスシリコン層が約６０オングストローム〜約３００オングストロームの厚さに形成され；該第一ｐ-ｉ-ｎ接合部の該真性型アモルファスシリコン層が約１,５００オングストローム〜約３,５００オングストロームの厚さに形成され；該第一ｐ-ｉ-ｎ接合部の該ｎ型微結晶シリコン層が約１００オングストローム〜約４００オングストロームの厚さに形成される、請求項１に記載の方法。
  6. 該第二ｐ-ｉ-ｎ接合部の該ｐ型微結晶シリコン層が約１００オングストローム〜約４００オングストロームの厚さに形成され；該第二ｐ-ｉ-ｎ接合部の該真性型アモルファスシリコン層が約１０,０００オングストローム〜約３０,０００オングストロームの厚さに形成され；該ｎ型アモルファスシリコン層が約１００オングストローム〜約５００オングストロームの厚さに形成される、請求項１に記載の方法。
  7. 該ｎ型アモルファスシリコンバッファ層が、約１０オングストローム〜約２００オングストロームの厚さに形成される、請求項２に記載の方法。
  8. 該ｐ型微結晶コンタクト層が、約６０オングストローム〜約３００オングストロームの厚さに形成される、請求項４に記載の方法。
  9. 該第一ｐ-ｉ-ｎ接合部が、第一プロセスチャンバと第二プロセスチャンバを備える第一プロセスシステム内で形成される、請求項１に記載の方法。
  10. 該第一ｐ-ｉ-ｎ接合部の該ｐ型アモルファスシリコン層が、該第一プロセスシステムの該第一プロセスチャンバ内で形成され、該真性型アモルファスシリコン層と該ｎ型微結晶シリコン層が、該第一プロセスシステムの該第二プロセスチャンバ内で形成される、請求項９に記載の方法。
  11. 該第一ｐ-ｉ-ｎ接合部を形成するステップが、更に、該第一システムの該第二プロセスチャンバ内で該真性型アモルファスシリコン層と該ｎ型微結晶シリコン層の間にｎ型アモルファスシリコンバッファ層を形成する工程を含む、請求項１０に記載の方法。
  12. 該第一ｐ-ｉ-ｎ接合部を形成するステップが、更に、該第一プロセスシステムの該第一プロセスチャンバ内で該ｐ型アモルファスシリコン層を形成する前にｐ型微結晶コンタクト層を形成する工程を含む、請求項１０に記載の方法。
  13. 該第二ｐ-ｉ-ｎ接合部が、第一プロセスチャンバと第二プロセスチャンバを備える第二プロセスシステム内で形成される、請求項９に記載の方法。
  14. 該第一ｐ-ｉ-ｎ接合部の該ｐ型微結晶シリコン層が、該第二プロセスシステムの該第一プロセスチャンバ内で形成され、該第二ｐ-ｉ-ｎ接合部の該真性型微結晶シリコン層と該ｎ型アモルファスシリコン層が、該第二プロセスシステムの該第二チャンバ内で形成される、請求項１３に記載の方法。
  15. 該第一ｐ-ｉ-ｎ接合部の該ｎ型微結晶シリコン層と該第二ｐ-ｉ-ｎ接合部の該ｐ型微結晶シリコン層が、該第一ｐ-ｉ-ｎ接合部と該第二ｐ-ｉ-ｎ接合部の間のトンネル層として作用するのに充分な導電性を有する、請求項１に記載の方法。
  16. 該第二ｐ-ｉ-ｎ接合部の該ｎ型アモルファスシリコン層が、多量にドープされたｎ型アモルファスシリコン層を備える、請求項１に記載の方法。
  17. 該多量にドープされたｎ型アモルファスシリコン層の抵抗率が、約５００オーム-ｃｍ以下である、請求項１６に記載の方法。
  18. 該基板が、該第一ｐ-ｉ-ｎ接合部と該第二ｐ-ｉ-ｎ接合部の形成の間に周囲環境にさらされる、請求項１に記載の方法。
  19. 該ｐ型アモルファスシリコン層が、ｐ型アモルファスシリコン-炭素層である、請求項１に記載の方法。
JP2009546463A 2007-01-18 2008-01-10 多接合太陽電池並びにそれを形成するための方法及び装置 Pending JP2010517271A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/624,677 US20080173350A1 (en) 2007-01-18 2007-01-18 Multi-junction solar cells and methods and apparatuses for forming the same
US11/671,988 US7582515B2 (en) 2007-01-18 2007-02-06 Multi-junction solar cells and methods and apparatuses for forming the same
PCT/US2008/050770 WO2008089043A2 (en) 2007-01-18 2008-01-10 Multi-junction solar cells and methods and apparatuses for forming the same

Publications (2)

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JP2010517271A JP2010517271A (ja) 2010-05-20
JP2010517271A5 true JP2010517271A5 (ja) 2011-03-03

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US (2) US7582515B2 (ja)
EP (1) EP2104955A4 (ja)
JP (1) JP2010517271A (ja)
KR (2) KR20080068523A (ja)
TW (1) TWI369788B (ja)
WO (1) WO2008089043A2 (ja)

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