WO2010137927A3 - 후면접합 구조의 태양전지 및 그 제조방법 - Google Patents

후면접합 구조의 태양전지 및 그 제조방법 Download PDF

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WO2010137927A3
WO2010137927A3 PCT/KR2010/003478 KR2010003478W WO2010137927A3 WO 2010137927 A3 WO2010137927 A3 WO 2010137927A3 KR 2010003478 W KR2010003478 W KR 2010003478W WO 2010137927 A3 WO2010137927 A3 WO 2010137927A3
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Prior art keywords
silicon wafer
silicon
transparent conductive
type amorphous
thin film
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PCT/KR2010/003478
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English (en)
French (fr)
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WO2010137927A4 (ko
WO2010137927A2 (ko
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김대원
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주식회사 효성
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Publication of WO2010137927A2 publication Critical patent/WO2010137927A2/ko
Publication of WO2010137927A3 publication Critical patent/WO2010137927A3/ko
Publication of WO2010137927A4 publication Critical patent/WO2010137927A4/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 후면접합 구조의 태양전지 및 그 제조방법에 관한 것이다. 본 발명은 실리콘 웨이퍼(100)의 전면 표면과 반대되는 후면 표면에 상기 실리콘 웨이퍼(100)와 같은 도전형의 전하를 수집하는 베이스 접합(101) 및 다른 도전형의 전하를 수집하는 에미터 접합(103)이 형성되는 후면 접합 구조의 태양전지에서, 대략 300℃ 내외의 온도에서 상기 전면 표면에 i형 비정질 실리콘 박막(118a)과, p형 비정질 실리콘 박막(118b) 및 투명도전막(119)을 순서대로 적층하여 형성한다. 상기 i형 비정질 실리콘 박막(118a)은 상기 실리콘 웨이퍼(100)의 표면에서의 전하 재결합을 줄여주는 역할을 하고, 상기 p형 비정질 실리콘 박막(118b)은 상기 실리콘 웨이퍼(100)와 상기 투명도전막(119) 사이에서의 접촉 저항을 감소시키고, 상기 투명도전막(119)은 실리콘 벌크에서의 벌크 저항 손실을 감소시키는 역할을 한다. 이와 같은 본 발명에 따르면, 실리콘 벌크의 저항 손실은 억제하면서 실리콘 벌크 이외의 투명도전막을 통한 전류 흐름이 증가하여 태양전지 효율이 향상되고, 보다 낮아진 공정온도로 인한 원가 절감을 기대할 수 있는 이점이 있다.
PCT/KR2010/003478 2009-05-29 2010-05-31 후면접합 구조의 태양전지 및 그 제조방법 WO2010137927A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090047308A KR101159276B1 (ko) 2009-05-29 2009-05-29 후면접합 구조의 태양전지 및 그 제조방법
KR10-2009-0047308 2009-05-29

Publications (3)

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WO2010137927A2 WO2010137927A2 (ko) 2010-12-02
WO2010137927A3 true WO2010137927A3 (ko) 2011-03-31
WO2010137927A4 WO2010137927A4 (ko) 2011-07-07

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WO (1) WO2010137927A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101276889B1 (ko) * 2010-12-09 2013-06-19 엘지전자 주식회사 태양 전지
KR101221987B1 (ko) * 2011-04-22 2013-01-15 오씨아이 주식회사 이종접합 실리콘 태양전지
GB2491209B (en) 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
CN103875082B (zh) * 2011-10-11 2016-04-20 三菱电机株式会社 光伏装置的制造方法及光伏装置
KR20130050721A (ko) 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
CN102856328B (zh) 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
KR102185939B1 (ko) * 2014-01-14 2020-12-03 엘지전자 주식회사 태양 전지 모듈
US11804558B2 (en) * 2017-12-29 2023-10-31 Maxeon Solar Pte. Ltd. Conductive contacts for polycrystalline silicon features of solar cells
CN113437179A (zh) * 2021-06-04 2021-09-24 浙江爱旭太阳能科技有限公司 一种太阳能电池及其制备方法

Citations (3)

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JP2006080450A (ja) * 2004-09-13 2006-03-23 Sharp Corp 太陽電池の製造方法
JP2007088254A (ja) * 2005-09-22 2007-04-05 Sharp Corp 裏面接合型太陽電池の製造方法
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture

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Publication number Priority date Publication date Assignee Title
US6262359B1 (en) 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
JP2006080450A (ja) * 2004-09-13 2006-03-23 Sharp Corp 太陽電池の製造方法
JP2007088254A (ja) * 2005-09-22 2007-04-05 Sharp Corp 裏面接合型太陽電池の製造方法

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KR20100128726A (ko) 2010-12-08
KR101159276B1 (ko) 2012-06-22
WO2010137927A4 (ko) 2011-07-07
WO2010137927A2 (ko) 2010-12-02

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