JP2011523230A5 - - Google Patents

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JP2011523230A5
JP2011523230A5 JP2011513520A JP2011513520A JP2011523230A5 JP 2011523230 A5 JP2011523230 A5 JP 2011523230A5 JP 2011513520 A JP2011513520 A JP 2011513520A JP 2011513520 A JP2011513520 A JP 2011513520A JP 2011523230 A5 JP2011523230 A5 JP 2011523230A5
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solar cell
doped region
type doped
cell structure
trench
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JP2011523230A (ja
JP5625167B2 (ja
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以上記載したように、改善された太陽電池形成及び構造を提供することができる。本発明の特定の実施形態が記載されたが、これらの実施形態は、本発明を明確に例示する目的で示したものであり、限定する目的で提供されていない。また、本開示を読むことにより、様々な改良を加えた実施形態が考えられることは、当業者にとって明らかである。
［項目７］
太陽電池基板の上に第１の誘電体層を形成する工程と、
前記太陽電池基板は、通常動作時に太陽に向けられるよう設けられた前面及び前記前面に対向する裏面を有するＮ型シリコンウエハを含み、前記太陽電池基板の前記裏面側であって前記第１の誘電体層の上にＰ型ドープ領域及びＮ型ドープ領域を形成する工程と、
前記Ｐ型ドープ領域及び前記Ｎ型ドープ領域との間を分離するトレンチを形成する工程と、
前記トレンチ内に第２の誘電体層を堆積する工程と
を備える太陽電池を製造する方法。
［項目８］
前記トレンチは、前記Ｐ型ドープ領域及び前記Ｎ型ドープ領域が形成される前に形成される項目７に記載の方法。
［項目９］
前記第２の誘電体層は、窒化シリコンを含む項目７に記載の方法。
［項目１０］
前記太陽電池基板の前記裏面側で、第１の金属接触子を前記Ｐ型ドープ領域と電気的に接続する工程と、
前記太陽電池基板の前記裏面側で、第２の金属接触子を前記Ｎ型ドープ領域と電気的に接続する工程と
をさらに備える項目７に記載の方法。
［項目１１］
前記Ｐ型ドープ領域は、前記第１の誘電体層上に堆積される前にＰ型ドーパントでプリドープされるポリシリコンを含み、前記Ｎ型ドープ領域は、前記第１の誘電体層上に形成される前にＮ型ドーパントでプリドープされるポリシリコンを含む項目７に記載の方法。
［項目１２］
前記Ｐ型ドープ領域を形成する工程は、
ドーパント源からポリシリコン層へとドーパントを拡散する工程を含み、
前記ドーパント源は、前記ポリシリコン層上に形成された層の材料である項目７に記載の方法。
［項目１３］
前記ドーパント源は、Ｐ型ドープ二酸化シリコン層を含む項目１２に記載の方法。
［項目１４］
前記トレンチの表面に不規則なテクスチャ加工を施す工程をさらに備える項目７に記載の方法。
［項目２０］
前記トレンチ構造の下の前記基板に設けられるパッシベーション領域をさらに含む構造。

Claims (11)

  1. 通常動作時に太陽に向けられるよう設けられた前面及び前記前面に対向する裏面を有するシリコン基板と、
    ポリシリコンを含むＰ型ドープ領域及びＮ型ドープ領域と、
    前記基板上の前記Ｐ型ドープ領域及び前記Ｎ型ドープ領域それぞれの下に設けられる第１の誘電体層と、
    前記Ｎ型ドープ領域から前記Ｐ型ドープ領域を分離するトレンチと、
    前記トレンチに形成される第２の誘電体層と
    を備える太陽電池構造。
  2. 前記第１の誘電体層は、前記シリコン基板の表面に５から４０オングストロームの厚さで形成される二酸化シリコンを含む請求項１に記載の太陽電池構造。
  3. 前記トレンチは、前記太陽電池の前記裏面に入射する太陽放射を吸収するテクスチャ表面を有する請求項１または２に記載の太陽電池構造。
  4. 前記第２の誘電体層と前記基板との間に、パッシベーション層をさらに備える請求項１から３の何れか１項に記載の太陽電池構造。
  5. 前記トレンチの下の基板に拡散パッシベーション領域をさらに備え、
    前記パッシベーション領域は、Ｎ型ドーパントでドープされている請求項１から４の何れか１項に記載の太陽電池構造。
  6. 前記第２の誘電体層を貫通して前記Ｐ型ドープ領域及び前記Ｎ型ドープ領域と電気的に接続されるインターデジテイト加工された金属接触子をさらに備える請求項１から５の何れか１項に記載の太陽電池構造。
  7. シリコン基板の裏面側であって誘電体層上に形成されたポリシリコンを含むＰ型ドープ領域及びＮ型ドープ領域と、
    前記Ｐ型ドープ領域と前記Ｎ型ドープ領域との間を分離するトレンチ構造と
    を備える太陽電池構造。
  8. 前記シリコン基板は、Ｎ型シリコン基板を含む請求項７に記載の太陽電池構造。
  9. 前記トレンチの表面は、不規則なテクスチャ加工が施されている請求項７または８に記載の太陽電池構造。
  10. 前記誘電体層は、５から４０オングストロームの厚さで形成された二酸化シリコンを含む請求項７から９の何れか１項に記載の太陽電池構造。
  11. 前記トレンチ構造の表面に形成されたパッシベーション層をさらに備える請求項７から９の何れか１項に記載の太陽電池構造。
JP2011513520A 2008-06-12 2009-04-29 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチ構造 Active JP5625167B2 (ja)

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US6092108P 2008-06-12 2008-06-12
US61/060,921 2008-06-12
US12/431,684 2009-04-28
US12/431,684 US7812250B2 (en) 2008-06-12 2009-04-28 Trench process and structure for backside contact solar cells with polysilicon doped regions
PCT/US2009/042130 WO2009151808A1 (en) 2008-06-12 2009-04-29 Trench process and structure for backside contact solar cells with polysilicon doped regions

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JP2011513521A Active JP5524194B2 (ja) 2008-06-12 2009-04-29 トレンチ処理およびポリシリコンドーピング領域を持つ裏面コンタクト型太陽電池用の構造
JP2014080106A Active JP5780565B2 (ja) 2008-06-12 2014-04-09 太陽電池の製造方法
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JP2014080106A Active JP5780565B2 (ja) 2008-06-12 2014-04-09 太陽電池の製造方法
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US (15) US7851698B2 (ja)
EP (4) EP2297788B1 (ja)
JP (5) JP5625167B2 (ja)
KR (2) KR101492683B1 (ja)
CN (4) CN202307920U (ja)
AU (2) AU2009257973B2 (ja)
MY (2) MY187141A (ja)
WO (2) WO2009151808A1 (ja)

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