JP5860101B2 - ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造 - Google Patents
ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造 Download PDFInfo
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- JP5860101B2 JP5860101B2 JP2014137839A JP2014137839A JP5860101B2 JP 5860101 B2 JP5860101 B2 JP 5860101B2 JP 2014137839 A JP2014137839 A JP 2014137839A JP 2014137839 A JP2014137839 A JP 2014137839A JP 5860101 B2 JP5860101 B2 JP 5860101B2
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- doped region
- type doped
- solar cell
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- 238000000034 method Methods 0.000 title claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 53
- 229920005591 polysilicon Polymers 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 50
- 239000002019 doping agent Substances 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 52
- 239000000377 silicon dioxide Substances 0.000 description 26
- 235000012239 silicon dioxide Nutrition 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100207343 Antirrhinum majus 1e20 gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Description
なお、本願明細書に記載の実施形態によれば、以下の構成もまた開示される。
[項目1]
通常動作時に太陽に向けられるよう設けられた前面及び前記前面に対向する裏面を有するシリコン基板と、
ポリシリコンを含むP型ドープ領域及びN型ドープ領域と、
前記基板上の前記P型ドープ領域及び前記N型ドープ領域それぞれの下に設けられる第1の誘電体層と、
前記N型ドープ領域から前記P型ドープ領域を分離するトレンチと、
前記トレンチに形成される第2の誘電体層と
を備える太陽電池構造。
[項目2]
前記第1の誘電体層は、前記シリコン基板の表面に5から40オングストロームの厚さで形成される二酸化シリコンを含む項目1に記載の太陽電池構造。
[項目3]
前記トレンチは、前記太陽電池の前記裏面に入射する太陽放射を吸収するテクスチャ表面を有する項目1に記載の太陽電池構造。
[項目4]
前記第2の誘電体層と前記基板との間に、パッシベーション層をさらに備える項目1に記載の太陽電池構造。
[項目5]
前記トレンチの下の基板に拡散パッシベーション領域をさらに備え、
前記パッシベーション領域は、N型ドーパントでドープされている項目1に記載の太陽電池構造。
[項目6]
前記第2の誘電体層を貫通して前記P型ドープ領域及び前記N型ドープ領域と電気的に接続されるインターデジテイト加工された金属接触子をさらに備える項目1に記載の太陽電池構造。
[項目7]
太陽電池基板の上に第1の誘電体層を形成する工程と、
前記太陽電池基板は、通常動作時に太陽に向けられるよう設けられた前面及び前記前面に対向する裏面を有するN型シリコンウエハを含み、前記太陽電池基板の前記裏面側であって前記第1の誘電体層の上にP型ドープ領域及びN型ドープ領域を形成する工程と、
前記P型ドープ領域及び前記N型ドープ領域との間を分離するトレンチを形成する工程と、
前記トレンチ内に第2の誘電体層を堆積する工程と
を備える太陽電池を製造する方法。
[項目8]
前記トレンチは、前記P型ドープ領域及び前記N型ドープ領域が形成される前に形成される項目7に記載の方法。
[項目9]
前記第2の誘電体層は、窒化シリコンを含む項目7に記載の方法。
[項目10]
前記太陽電池基板の前記裏面側で、第1の金属接触子を前記P型ドープ領域と電気的に接続する工程と、
前記太陽電池基板の前記裏面側で、第2の金属接触子を前記N型ドープ領域と電気的に接続する工程と
をさらに備える項目7に記載の方法。
[項目11]
前記P型ドープ領域は、前記第1の誘電体層上に堆積される前にP型ドーパントでプリドープされるポリシリコンを含み、前記N型ドープ領域は、前記第1の誘電体層上に形成される前にN型ドーパントでプリドープされるポリシリコンを含む項目7に記載の方法。
[項目12]
前記P型ドープ領域を形成する工程は、
ドーパント源からポリシリコン層へとドーパントを拡散する工程を含み、
前記ドーパント源は、前記ポリシリコン層上に形成された層の材料である項目7に記載の方法。
[項目13]
前記ドーパント源は、P型ドープ二酸化シリコン層を含む項目12に記載の方法。
[項目14]
前記トレンチの表面に不規則なテクスチャ加工を施す工程をさらに備える項目7に記載の方法。
[項目15]
シリコン基板の裏面側であって誘電体層上に形成されたポリシリコンを含むP型ドープ領域及びN型ドープ領域と、
前記P型ドープ領域と前記N型ドープ領域との間を分離するトレンチ構造と
を備える太陽電池構造。
[項目16]
前記シリコン基板は、N型シリコン基板を含む項目15に記載の構造。
[項目17]
前記トレンチの表面は、不規則なテクスチャ加工が施されている項目15に記載の構造。
[項目18]
前記誘電体層は、5から40オングストロームの厚さで形成された二酸化シリコンを含む項目15に記載の構造。
[項目19]
前記トレンチ構造の表面に形成されたパッシベーション層をさらに備える項目15に記載の構造。
[項目20]
前記トレンチ構造の下の前記基板に設けられるパッシベーション領域をさらに含む項目15に記載の構造。
Claims (9)
- 太陽電池基板の上に第1の誘電体層を形成する工程と、
前記太陽電池基板はN型シリコンウエハを含み、通常動作時に太陽に向けられるよう設けられた前記太陽電池の前面に対向する太陽電池基板の裏面上であって、前記第1の誘電体層の上に、P型ドープ領域及びN型ドープ領域を形成する工程と、
前記P型ドープ領域及び前記N型ドープ領域との間を分離するトレンチを形成する工程と、
前記トレンチ内に第2の誘電体層を堆積する工程と
を備え、
前記P型ドープ領域上に設けられた第1のドーパント源から拡散されたドーパントが前記太陽電池基板上のP型ドープ領域を形成し、
前記N型ドープ領域上に設けられた第2のドーパント源から拡散されたドーパントが前記太陽電池基板上のN型ドープ領域を形成する、
太陽電池を製造する方法。 - 太陽電池基板の上に第1の誘電体層を形成する工程と、
前記太陽電池基板はN型シリコンウエハを含み、通常動作時に太陽に向けられるよう設けられた前記太陽電池の前面に対向する太陽電池基板の裏面上であって、前記第1の誘電体層の上に、ポリシリコン層を形成する工程と、
前記ポリシリコン層を2つの領域に分離するトレンチ形成する工程と、
前記トレンチを形成する工程の後に、前記2つの領域の一方の上に設けられた第1のドーパント源から前記2つの領域の前記一方にドーパントを拡散させることにより、前記太陽電池基板の前記裏面上のP型ドープ領域を形成する工程と、
前記トレンチを形成する工程の後に、前記2つの領域の他方の上に設けられた第2のドーパント源から前記2つの領域の前記他方にドーパントを拡散させることにより、前記太陽電池基板の前記裏面上のN型ドープ領域を形成する工程と、
前記トレンチ内に第2の誘電体層を堆積する工程と
を備え、
前記P型ドープ領域は、前記第1の誘電体層上に形成される前にP型ドーパントでプリドープされるポリシリコンを含み、
前記N型ドープ領域は、前記第1の誘電体層上に形成される前にN型ドーパントでプリドープされるポリシリコンを含む、
太陽電池を製造する方法。 - 前記第2の誘電体層は、窒化シリコンを含む請求項1または2に記載の方法。
- 前記基板の前記裏面側で、第1の金属接触子を前記P型ドープ領域と電気的に接続する工程と、
前記基板の前記裏面側で、第2の金属接触子を前記N型ドープ領域と電気的に接続する工程と
をさらに備える請求項1から3のいずれか一項に記載の方法。 - 前記トレンチの表面に不規則なテクスチャ加工を施す工程をさらに備える請求項1から4のいずれか一項に記載の方法。
- 前記トレンチの表面にパッシベーション層を形成する工程さらに備える請求項1から5のいずれか一項に記載の方法。
- 太陽電池基板上に第1誘電体層を形成する工程と、
前記太陽電池基板上のP型ドープ領域を形成するべく、前記P型ドープ領域上に設けられた第1のドーパント源からドーパントを拡散させる工程と、
前記太陽電池基板上のN型ドープ領域を形成するべく、前記N型ドープ領域上に設けられた第2のドーパント源からドーパントを拡散させる工程と、
前記P型ドープ領域と前記N型ドープ領域との間にトレンチを形成する工程と
を備え、
前記P型ドープ領域および前記N型ドープ領域は、前記太陽電池基板に対して外付けされており、
前記トレンチは、前記P型ドープ領域および前記N型ドープ領域の下の第1誘電体層を分離している、
太陽電池を製造する方法。 - 前記トレンチは、前記P型ドープ領域及び前記N型ドープ領域が形成された後に形成される請求項7に記載の方法。
- 太陽電池基板上に第1誘電体層を形成する工程と、
前記第1誘電体層の上に、ポリシリコン層を形成する工程と、
前記ポリシリコン層を2つの領域に分離するトレンチ形成する工程と、
前記トレンチ形成する工程の後に、前記2つの領域の一方の上に設けられた第1のドーパント源から前記2つの領域の前記一方にドーパントを拡散させて、前記太陽電池基板上のP型ドープ領域を形成する工程と、
前記トレンチ形成する工程の後に、前記2つの領域の他方の上に設けられた第2のドーパント源から前記2つの領域の前記他方にドーパントを拡散させて、前記太陽電池基板上のN型ドープ領域を形成する工程と
を備え、
前記P型ドープ領域および前記N型ドープ領域は、前記太陽電池基板に対して外付けされており、
前記トレンチは、前記P型ドープ領域および前記N型ドープ領域の下の第1誘電体層を分離している、
太陽電池を製造する方法。
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