JP2010263129A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 237
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 136
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 136
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 41
- 238000001039 wet etching Methods 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 230000008602 contraction Effects 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 35
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 229920001709 polysilazane Polymers 0.000 description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000280 densification Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】相対的に幅が狭い素子分離溝に残されるシリコン酸化膜9の膜厚が、相対的に幅が広い素子分離溝に残されるシリコン酸化膜9の膜厚よりも薄い。シリコン酸化膜9が薄くなった分、圧縮応力の比較的高いHDP−CVD法によるシリコン酸化膜10(上層)が、下層のシリコン酸化膜9の上により厚く積層されている。相対的に幅が狭い素子分離溝に最終的に形成される素子分離酸化膜の圧縮応力がより高められる。
【選択図】図10
Description
本発明の実施の形態1に係る半導体装置とその製造方法について説明する。図1に示すように、まず、半導体基板1の主表面上に、素子分離溝を形成するためのマスク材が形成される。そのマスク材として、半導体基板1の主表面上に膜厚約5〜20nmのシリコン酸化膜2が形成され、次に、そのシリコン酸化膜2上に、膜厚約50〜200nmのシリコン窒化膜3が形成される。
また、この水蒸気雰囲気中での熱処理は、熱処理温度を変化させた2段階以上の熱処理であることが好ましい。次に、温度700〜1100℃の窒素(N2)あるいはアルゴン(Ar)などの不活性ガス雰囲気中のもとで約10〜120分程度の熱処理を施すことにより、シリコン酸化膜9が緻密化する。
前述した半導体装置では、素子分離溝に形成されるシリコン酸化膜(下層)として、SOD法によってポリシラザン膜を形成する場合を例に挙げて説明した。ここでは、O3−TEOSによるシリコン酸化膜を形成する場合を例に挙げて説明する。
Claims (12)
- 半導体基板における第1領域を挟み込むように、第1幅をもって前記半導体基板の表面から所定の深さにわたり形成された第1素子分離溝と、
半導体基板における第2領域を挟み込むように、前記第1幅よりも狭い第2幅をもって前記半導体基板の表面から所定の深さにわたり形成された第2素子分離溝と、
前記第1素子分離溝と前記第2素子分離溝を埋め込むように形成された素子分離絶縁膜と
を有し、
前記素子分離絶縁膜は、
所定の密度の第1絶縁膜と、
前記第1絶縁膜の密度よりも高い密度の第2絶縁膜と
を備え、
前記第1素子分離溝には、前記第1絶縁膜が埋め込まれ、
前記第2素子分離溝には、前記第1絶縁膜の上に前記第2絶縁膜が積層される態様で、前記第1絶縁膜および前記第2絶縁膜が埋め込まれた、半導体装置。 - 半導体基板における第3領域を挟み込むように、前記第2幅よりも狭い第3幅をもって前記半導体基板の表面から所定の深さにわたり形成された第3素子分離溝を備え、
前記素子分離絶縁膜は前記第3素子分離溝を埋め込むように形成され、
前記第3素子分離溝には、前記第1絶縁膜の上に前記第2絶縁膜が積層される態様で、前記第1絶縁膜および前記第2絶縁膜が埋め込まれ、
前記第3素子分離溝に埋め込まれた前記第2絶縁膜は、前記第2素子分離溝に埋め込まれた前記第2絶縁膜よりも厚く形成された、請求項1記載の半導体装置。 - 前記第2絶縁膜の所定のウェットエッチング液に対するウェットエッチングレートは、前記第1絶縁膜の前記ウェットエッチング液に対するウエットエッチングレートよりも低い、請求項1または2に記載の半導体装置。
- 前記第2絶縁膜の所定の熱処理による膜の収縮率は、前記第1絶縁膜の前記熱処理による膜の収縮率よりも小さい、請求項1〜3のいずれかに記載の半導体装置。
- 前記第1絶縁膜は塗布膜またはO3-TEOSによるシリコン酸化膜であり、前記第2絶縁膜は高密度プラズマ化学気相成長法によるシリコン酸化膜である、請求項1〜4のいずれかに記載の半導体装置。
- 前記第1領域に形成された、第1ゲート電極を含む第1トランジスタと、
前記第2領域に形成された、第2ゲート電極を含む第2トランジスタと、
前記第3領域に形成された、第3ゲート電極を含む第3トランジスタと
を備えた、請求項1〜5のいずれかに記載の半導体装置。 - 半導体基板の主表面上に素子分離溝を形成するためのマスク材を形成する工程と、
前記マスク材をマスクとして、前記半導体基板にエッチングを施すことにより、前記半導体基板における第1領域を挟み込むように、第1幅を有する所定の深さの第1素子分離溝を形成するとともに、半導体基板における第2領域を挟み込むように、前記第1幅よりも狭い第2幅を有する所定の深さの第2素子分離溝を形成する工程と、
前記第1素子分離溝および前記第2素子分離溝を埋め込むように、前記半導体基板上に第1絶縁膜を形成する工程と、
前記第1絶縁膜にアニール処理を施す工程と、
前記第1素子分離溝および前記第2素子分離溝に位置する前記第1絶縁膜の部分を残す態様で、前記第1絶縁膜を前記マスク材の表面まで平坦化する工程と、
前記第1素子分離溝および前記第2素子分離溝のそれぞれに残された前記第1絶縁膜の部分にウェットエッチング処理を施すことにより、前記第1素子分離溝に残された前記第1絶縁膜の上面の位置を下げるとともに、前記第2素子分離溝に残された前記第1絶縁膜の上面の位置を、前記第1素子分離溝に残される前記第1絶縁膜の上面の位置よりも下げる工程と、
前記第1素子分離溝に残された前記第1絶縁膜の部分および前記第2素子分離溝に残された前記第1絶縁膜の部分を覆うように、前記半導体基板上に、アニールされた前記第1絶縁膜の密度よりも高い密度の第2絶縁膜を形成する工程と、
前記第1素子分離溝に位置する前記第2絶縁膜の部分を残さず、前記第2素子分離溝に位置する前記第2絶縁膜の部分を残す態様で、前記第2絶縁膜にエッチングを施すことにより、前記第2絶縁膜の高さを調整する工程と、
前記マスク材を除去する工程と
を備えた、半導体装置の製造方法。 - 前記第1素子分離溝および前記第2素子分離溝を形成する工程は、前記半導体基板における第3領域を挟み込むように、前記第2幅よりも狭い第3幅を有する所定の深さの第3素子分離溝を形成する工程をさらに含み、
第1絶縁膜を形成する工程では、前記第1絶縁膜は前記第3素子分離溝を埋め込むように形成され、
前記第1絶縁膜を平坦化する工程では、前記第3素子分離溝に位置する前記第1絶縁膜の部分を残す態様で前記第1絶縁膜が平坦化され、
前記第1絶縁膜の上面の位置を下げる工程では、前記第3素子分離溝に残された前記第1絶縁膜の上面の位置が、前記第2素子分離溝に残される前記第1絶縁膜の上面の位置よりも下げられ、
前記第2絶縁膜の高さを調整する工程では、前記第3素子分離溝に残される前記第2絶縁膜の部分の膜厚が、前記第2素子分離溝に残される前記第2絶縁膜の部分の膜厚よりも厚くなるように調整される、請求項7記載の半導体装置の製造方法。 - 前記第2絶縁膜の所定のウェットエッチング液に対するウェットエッチングレートは、前記第1絶縁膜の前記ウェットエッチング液に対するウエットエッチングレートよりも低い、請求項7または8に記載の半導体装置の製造方法。
- 前記第2絶縁膜の所定の熱処理による膜の収縮率は、前記第1絶縁膜の前記熱処理による膜の収縮率よりも小さい、請求項7〜9のいずれかに記載の半導体装置の製造方法。
- 前記第1絶縁膜を形成する工程では、前記第1絶縁膜として、塗布膜またはO3-TEOSによるシリコン酸化膜が形成され、
前記第2絶縁膜を形成する工程では、前記第2絶縁膜として、高密度プラズマ化学気相成長法によるシリコン酸化膜が形成される、請求項7〜10にいずれかに記載の半導体装置の製造方法。 - 前記第2絶縁膜の高さを調整する工程の後、
前記第1領域に第1ゲート電極を含む第1トランジスタを形成する工程と、
前記第2領域に第2ゲート電極を含む第2トランジスタを形成する工程と、
前記第3領域に第3ゲート電極を含む第3トランジスタを形成する工程と
を備えた、請求項7〜11のいずれかに記載の半導体装置の製造方法。
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