JP2007335807A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007335807A JP2007335807A JP2006168928A JP2006168928A JP2007335807A JP 2007335807 A JP2007335807 A JP 2007335807A JP 2006168928 A JP2006168928 A JP 2006168928A JP 2006168928 A JP2006168928 A JP 2006168928A JP 2007335807 A JP2007335807 A JP 2007335807A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 137
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 70
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000007791 liquid phase Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000077 silane Inorganic materials 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 371
- 238000005229 chemical vapour deposition Methods 0.000 description 43
- 238000009833 condensation Methods 0.000 description 35
- 230000005494 condensation Effects 0.000 description 35
- 238000002955 isolation Methods 0.000 description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 238000005530 etching Methods 0.000 description 20
- 238000002474 experimental method Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
【解決手段】シラン35と過酸化水素36とを基板1上で反応させて流動性を有する液相のシラノール37を生成させる。シラノール37を、基板1に設けられたアスペクト比が所定の値以上である第1の凹部5a内を満たすまで導入するとともにアスペクト比が所定の値未満である第2の凹部5b内にその底部から中間部まで導入する。各凹部5a,5b内のシラノール37を脱水縮合させてシリコン酸化膜8に転換し、凹部5aをシリコン酸化膜8により埋め込むとともに凹部5bの底部から中間部までシリコン酸化膜8を設ける。シリコン酸化膜8よりも膜密度が高い絶縁膜9を凹部5bの中間部から上部を埋め込むまで設ける。
【選択図】図3
Description
"Novel shallow trench isolation process using flowable oxide CVD for sub-100nm DRAM", Sung-Woong, et al., 9.4.1-9.4.4, IEDM 233-236, 2002 IEEE
Claims (5)
- シリコンを含有する化合物からなる原料ガスと酸素を含有する化合物からなる原料ガスとを基板上で反応させて流動性を有する液相のシラノールを生成させ、このシラノールを前記基板に設けられたアスペクト比が異なる複数の凹部のうちアスペクト比が所定の値以上である第1の凹部内を満たすまで導入するとともに前記各凹部のうちアスペクト比が前記所定の値未満である第2の凹部内にその内側部を覆いつつその底部から中間部まで導入し、
前記第1および第2の各凹部内に導入された前記シラノールを脱水縮合させてシリコン酸化膜に転換することにより前記第1の凹部の内部全体を前記シリコン酸化膜により埋め込むとともに前記第2の凹部の内側部を覆ってその底部から中間部まで前記シリコン酸化膜を設け、
前記シリコン酸化膜が設けられた前記第2の凹部の前記中間部から上部を埋め込むまで前記シリコン酸化膜よりも膜密度が高い絶縁膜を前記シリコン酸化膜上に設ける、
ことを特徴とする半導体装置の製造方法。 - 前記シリコンを含有する化合物としてSiH4 を用いるとともに、前記酸素を含有する化合物としてH2O2 を用いることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記絶縁膜をプラズマCVD法により設けることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 半導体基板、この半導体基板上に設けられたトンネル絶縁膜、このトンネル絶縁膜上に設けられたフローティングゲート電極、このフローティングゲート電極上に設けられた電極間絶縁膜、およびこの電極間絶縁膜上に設けられたコントロールゲート電極を含むメモリーセルの形成領域内で、少なくともフローティングゲート電極膜から前記半導体基板の表層部まで掘り下げて前記第1の凹部を形成するととともに、前記メモリーセルの形成領域以外の領域で、前記第1の凹部と実質的に同じ深さで、かつ、前記第1の凹部よりも幅が広い前記第2の凹部を形成することを特徴とする請求項1〜3のうちのいずれかに記載の半導体装置の製造方法。
- 前記フローティングゲート電極膜上にストッパー膜を設け、このストッパー膜から前記半導体基板の表層部まで掘り下げて前記第1および第2の各凹部を形成した上で、前記ストッパー膜を覆って前記シリコン酸化膜および前記絶縁膜を設け、
前記ストッパー膜よりも上方に設けられている前記シリコン酸化膜および前記絶縁膜を除去することにより、前記第1の凹部内に前記シリコン酸化膜を埋め込むとともに前記第2の凹部内に前記シリコン酸化膜および前記絶縁膜を埋め込んだ後、
前記第1の凹部内の前記シリコン酸化膜ならびに前記第2の凹部内の前記シリコン酸化膜および前記絶縁膜を前記フローティングゲート電極膜の厚さ方向の中間部まで後退させることを特徴とする請求項4に記載の半導体装置の製造方法。
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