JP4413947B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4413947B2 JP4413947B2 JP2007163686A JP2007163686A JP4413947B2 JP 4413947 B2 JP4413947 B2 JP 4413947B2 JP 2007163686 A JP2007163686 A JP 2007163686A JP 2007163686 A JP2007163686 A JP 2007163686A JP 4413947 B2 JP4413947 B2 JP 4413947B2
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- semiconductor device
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- insulating film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Description
24 ポーラス有機Low−k膜
28a 加工部の表面
30 シリコン酸化膜
Claims (2)
- 半導体基板上に形成された絶縁膜に所定の加工を施し、
前記絶縁膜の加工部の表面に、水酸基を有する化合物を液体状態で付着させて液膜を形成した後に、その表面の近傍に少なくともSi含有化合物と酸素源化合物を含む原料を活性化させた状態で供給し、その表面に前記原料を反応させた1次反応物である流動性を有するシラノールを供給し、
その1次反応物について脱水縮合を行なうことにより、前記加工部の表面にシリコン酸化膜を形成することを特徴とする半導体装置の製造方法。 - 半導体基板上に形成された絶縁膜に所定の加工を施し、
前記絶縁膜の加工部の表面に、水酸基を有する化合物及び前記酸素源化合物を液体状態で付着させて液膜を形成した後に、その表面の近傍に少なくともSi含有化合物を含む原料を供給し、前記Si含有化合物を前記加工部の表面で前記酸素源化合物と反応させて1次反応物である流動性を有するシラノールを供給し、
その1次反応物について脱水縮合を行なうことにより、前記加工部の表面にシリコン酸化膜を形成することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007163686A JP4413947B2 (ja) | 2007-06-21 | 2007-06-21 | 半導体装置の製造方法 |
US12/142,858 US8008190B2 (en) | 2007-06-21 | 2008-06-20 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007163686A JP4413947B2 (ja) | 2007-06-21 | 2007-06-21 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009004541A JP2009004541A (ja) | 2009-01-08 |
JP4413947B2 true JP4413947B2 (ja) | 2010-02-10 |
Family
ID=40136930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007163686A Expired - Fee Related JP4413947B2 (ja) | 2007-06-21 | 2007-06-21 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8008190B2 (ja) |
JP (1) | JP4413947B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5119832B2 (ja) * | 2007-09-27 | 2013-01-16 | 富士通株式会社 | 界面ラフネス緩和膜、配線層、半導体装置および半導体装置の製造方法 |
JP5862353B2 (ja) | 2011-08-05 | 2016-02-16 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
KR101444527B1 (ko) * | 2011-08-05 | 2014-09-24 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
KR101899481B1 (ko) * | 2011-12-23 | 2018-09-18 | 삼성전자주식회사 | 전자 장치의 배선 형성 방법 |
TW201403711A (zh) * | 2012-07-02 | 2014-01-16 | Applied Materials Inc | 利用氣相化學暴露之低k介電質損傷修復 |
US11121025B2 (en) * | 2018-09-27 | 2021-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layer for side wall passivation |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH098032A (ja) * | 1995-06-20 | 1997-01-10 | Sony Corp | 絶縁膜形成方法 |
JPH09116011A (ja) * | 1995-10-23 | 1997-05-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH1154504A (ja) | 1997-08-04 | 1999-02-26 | Sony Corp | 積層絶縁体膜の形成方法およびこれを用いた半導体装置 |
DE60124674T2 (de) * | 2000-09-14 | 2007-09-13 | Japan As Represented By President Of Japan Advanced Institute Of Science And Technology | Heizelement für einen cvd-apparat |
US6521547B1 (en) * | 2001-09-07 | 2003-02-18 | United Microelectronics Corp. | Method of repairing a low dielectric constant material layer |
US6833322B2 (en) * | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
CN1839468B (zh) | 2003-10-08 | 2010-11-24 | 霍尼韦尔国际公司 | 使用甲硅烷基化剂修复低k介电材料的损伤 |
JP2006104418A (ja) | 2004-10-08 | 2006-04-20 | Jsr Corp | 表面疎水化用組成物、表面疎水化方法、半導体装置およびその製造方法 |
US20060128163A1 (en) * | 2004-12-14 | 2006-06-15 | International Business Machines Corporation | Surface treatment of post-rie-damaged p-osg and other damaged materials |
US7135402B2 (en) * | 2005-02-01 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing pores of low-k dielectrics using CxHy |
JP2007335807A (ja) * | 2006-06-19 | 2007-12-27 | Toshiba Corp | 半導体装置の製造方法 |
JP2008010441A (ja) * | 2006-06-27 | 2008-01-17 | Toshiba Corp | シリコン酸化膜の形成方法 |
-
2007
- 2007-06-21 JP JP2007163686A patent/JP4413947B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-20 US US12/142,858 patent/US8008190B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8008190B2 (en) | 2011-08-30 |
US20080318408A1 (en) | 2008-12-25 |
JP2009004541A (ja) | 2009-01-08 |
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