CN105448807B - 一种半导体器件芯片对通隔离制造工艺 - Google Patents
一种半导体器件芯片对通隔离制造工艺 Download PDFInfo
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- CN105448807B CN105448807B CN201510804263.2A CN201510804263A CN105448807B CN 105448807 B CN105448807 B CN 105448807B CN 201510804263 A CN201510804263 A CN 201510804263A CN 105448807 B CN105448807 B CN 105448807B
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- silicon
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- manufacturing process
- silicon chip
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000002955 isolation Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 8
- 238000001459 lithography Methods 0.000 claims abstract description 8
- 239000004411 aluminium Substances 0.000 claims abstract description 7
- 230000009977 dual effect Effects 0.000 claims abstract description 6
- 239000003708 ampul Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 19
- 238000001259 photo etching Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510804263.2A CN105448807B (zh) | 2015-11-20 | 2015-11-20 | 一种半导体器件芯片对通隔离制造工艺 |
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CN201510804263.2A CN105448807B (zh) | 2015-11-20 | 2015-11-20 | 一种半导体器件芯片对通隔离制造工艺 |
Publications (2)
Publication Number | Publication Date |
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CN105448807A CN105448807A (zh) | 2016-03-30 |
CN105448807B true CN105448807B (zh) | 2017-11-10 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110098254A (zh) * | 2019-04-30 | 2019-08-06 | 江苏捷捷微电子股份有限公司 | 利用对称性双向划片的单台面高压可控硅芯片和制造方法 |
CN113488377A (zh) * | 2021-07-02 | 2021-10-08 | 马鞍山市槟城电子有限公司 | 一种半导体器件的制作方法 |
CN113707544A (zh) * | 2021-08-23 | 2021-11-26 | 江苏捷捷微电子股份有限公司 | 一种半导体器件芯片穿通扩散制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1913130A (zh) * | 2006-08-28 | 2007-02-14 | 汤庆敏 | 一种半导体器件芯片穿通隔离区及pn结的制造工艺 |
CN101673700A (zh) * | 2009-09-23 | 2010-03-17 | 上海贝岭股份有限公司 | 一种用于集成电路的高低压隔离工艺 |
CN102244093A (zh) * | 2011-07-28 | 2011-11-16 | 启东市捷捷微电子有限公司 | 一种降低对通隔离扩散横向扩散宽度的结构及方法 |
CN103151263A (zh) * | 2013-03-11 | 2013-06-12 | 浙江正邦电力电子有限公司 | 一种晶闸管芯片制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5841306B2 (ja) * | 2009-05-08 | 2016-01-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2012020498A1 (ja) * | 2010-08-12 | 2012-02-16 | 富士電機株式会社 | 半導体装置の製造方法 |
US8772854B2 (en) * | 2012-04-02 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-time programming memory cells and methods for forming the same |
TWI470733B (zh) * | 2012-08-28 | 2015-01-21 | Anpec Electronics Corp | 溝渠絕緣製程 |
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2015
- 2015-11-20 CN CN201510804263.2A patent/CN105448807B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1913130A (zh) * | 2006-08-28 | 2007-02-14 | 汤庆敏 | 一种半导体器件芯片穿通隔离区及pn结的制造工艺 |
CN101673700A (zh) * | 2009-09-23 | 2010-03-17 | 上海贝岭股份有限公司 | 一种用于集成电路的高低压隔离工艺 |
CN102244093A (zh) * | 2011-07-28 | 2011-11-16 | 启东市捷捷微电子有限公司 | 一种降低对通隔离扩散横向扩散宽度的结构及方法 |
CN103151263A (zh) * | 2013-03-11 | 2013-06-12 | 浙江正邦电力电子有限公司 | 一种晶闸管芯片制备方法 |
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Address after: 321400 Zhejiang County of Jinyun city of Lishui Province East five East Industrial Zone Zhengbang power electronics company Applicant after: ZHEJIANG ZHENGBANG ELECTRONIC CO.,LTD. Address before: 321400 Zhejiang County of Jinyun city of Lishui Province East five East Industrial Zone Zhengbang power electronics company Applicant before: ZHEJIANG ZHENGBANG ELECTRIC POWER ELECTRONICS Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Semiconductor Device Chip Pair Isolation Manufacturing Process Granted publication date: 20171110 Pledgee: Lishui Jinyun Sub branch of Zhejiang Tailong Commercial Bank Co.,Ltd. Pledgor: ZHEJIANG ZHENGBANG ELECTRONIC CO.,LTD. Registration number: Y2024980007381 |
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