JP2010199601A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010199601A
JP2010199601A JP2010095344A JP2010095344A JP2010199601A JP 2010199601 A JP2010199601 A JP 2010199601A JP 2010095344 A JP2010095344 A JP 2010095344A JP 2010095344 A JP2010095344 A JP 2010095344A JP 2010199601 A JP2010199601 A JP 2010199601A
Authority
JP
Japan
Prior art keywords
film
layer
tin
insulating film
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010095344A
Other languages
English (en)
Japanese (ja)
Inventor
Atsuko Sakata
敦子 坂田
Junichi Wada
純一 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010095344A priority Critical patent/JP2010199601A/ja
Publication of JP2010199601A publication Critical patent/JP2010199601A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010095344A 2006-07-21 2010-04-16 半導体装置 Pending JP2010199601A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010095344A JP2010199601A (ja) 2006-07-21 2010-04-16 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006200094 2006-07-21
JP2010095344A JP2010199601A (ja) 2006-07-21 2010-04-16 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007185564A Division JP4498391B2 (ja) 2006-07-21 2007-07-17 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2010199601A true JP2010199601A (ja) 2010-09-09

Family

ID=38985357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010095344A Pending JP2010199601A (ja) 2006-07-21 2010-04-16 半導体装置

Country Status (4)

Country Link
US (2) US9129970B2 (https=)
JP (1) JP2010199601A (https=)
KR (1) KR101001456B1 (https=)
TW (1) TW200814156A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204587A (ja) * 2011-03-25 2012-10-22 Hitachi Kyowa Engineering Co Ltd 半導体装置、半導体装置用基板および該基板の製造方法
JP2018512731A (ja) * 2015-03-11 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハロゲン系前駆体から金属配線を保護するための方法及び装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153487A (ja) * 2008-12-24 2010-07-08 Panasonic Corp 半導体装置及びその製造方法
JP5582727B2 (ja) 2009-01-19 2014-09-03 株式会社東芝 半導体装置の製造方法及び半導体装置
JP5025679B2 (ja) * 2009-03-27 2012-09-12 株式会社東芝 半導体装置
JP5304536B2 (ja) * 2009-08-24 2013-10-02 ソニー株式会社 半導体装置
US8661664B2 (en) 2010-07-19 2014-03-04 International Business Machines Corporation Techniques for forming narrow copper filled vias having improved conductivity
JP5823359B2 (ja) 2012-08-23 2015-11-25 株式会社東芝 半導体装置の製造方法
CN103160783B (zh) * 2013-03-26 2014-10-08 沈阳金锋特种刀具有限公司 一种TiCuN纳米复合涂层及其制备方法
US9704804B1 (en) * 2015-12-18 2017-07-11 Texas Instruments Incorporated Oxidation resistant barrier metal process for semiconductor devices
JP7321730B2 (ja) * 2019-03-14 2023-08-07 キオクシア株式会社 半導体装置の製造方法
JP2021136269A (ja) 2020-02-25 2021-09-13 キオクシア株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233517A (ja) * 1998-02-16 1999-08-27 Sony Corp 半導体装置の銅配線
JP2001338925A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004289174A (ja) * 2004-05-21 2004-10-14 Toshiba Corp 半導体装置及びその製造方法
WO2006121604A2 (en) * 2005-05-05 2006-11-16 Applied Materials, Inc. Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof

Family Cites Families (20)

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US4681818A (en) * 1986-03-18 1987-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Oxygen diffusion barrier coating
US5135801A (en) * 1988-06-13 1992-08-04 Sandvik Ab Diffusion barrier coating material
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
JPH10125782A (ja) * 1996-10-15 1998-05-15 Sony Corp 半導体装置の製造方法
JP3033564B2 (ja) * 1997-10-02 2000-04-17 セイコーエプソン株式会社 半導体装置の製造方法
JP2000124307A (ja) * 1998-10-19 2000-04-28 Sony Corp 金属系膜の形成方法および電子装置の製造方法
JP3974284B2 (ja) 1999-03-18 2007-09-12 株式会社東芝 半導体装置の製造方法
US6436850B1 (en) * 1999-09-01 2002-08-20 Guarionex Morales Method of degassing low k dielectric for metal deposition
US6436819B1 (en) * 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US6486059B2 (en) * 2001-04-19 2002-11-26 Silicon Intergrated Systems Corp. Dual damascene process using an oxide liner for a dielectric barrier layer
JP3648480B2 (ja) 2001-12-26 2005-05-18 株式会社東芝 半導体装置およびその製造方法
KR20030089756A (ko) * 2002-05-18 2003-11-28 주식회사 하이닉스반도체 삼원계 확산배리어막의 형성 방법 및 그를 이용한구리배선의 형성 방법
JP4344506B2 (ja) 2002-05-20 2009-10-14 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2004071956A (ja) * 2002-08-08 2004-03-04 Toshiba Corp 半導体装置の製造方法
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
JP2005244178A (ja) 2004-01-26 2005-09-08 Toshiba Corp 半導体装置の製造方法
JP2006005190A (ja) 2004-06-18 2006-01-05 Renesas Technology Corp 半導体装置
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
KR100782202B1 (ko) * 2005-02-25 2007-12-05 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
KR200389756Y1 (ko) 2005-04-27 2005-07-14 김정호 카메라폰의 삼각대 탑재장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233517A (ja) * 1998-02-16 1999-08-27 Sony Corp 半導体装置の銅配線
JP2001338925A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004289174A (ja) * 2004-05-21 2004-10-14 Toshiba Corp 半導体装置及びその製造方法
WO2006121604A2 (en) * 2005-05-05 2006-11-16 Applied Materials, Inc. Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204587A (ja) * 2011-03-25 2012-10-22 Hitachi Kyowa Engineering Co Ltd 半導体装置、半導体装置用基板および該基板の製造方法
JP2018512731A (ja) * 2015-03-11 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハロゲン系前駆体から金属配線を保護するための方法及び装置

Also Published As

Publication number Publication date
US9343402B2 (en) 2016-05-17
KR20080009006A (ko) 2008-01-24
US20150333006A1 (en) 2015-11-19
KR101001456B1 (ko) 2010-12-14
TW200814156A (en) 2008-03-16
US9129970B2 (en) 2015-09-08
US20080023838A1 (en) 2008-01-31
TWI374482B (https=) 2012-10-11

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