JP2010182819A - 薄膜トランジスタおよび表示装置 - Google Patents

薄膜トランジスタおよび表示装置 Download PDF

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Publication number
JP2010182819A
JP2010182819A JP2009024035A JP2009024035A JP2010182819A JP 2010182819 A JP2010182819 A JP 2010182819A JP 2009024035 A JP2009024035 A JP 2009024035A JP 2009024035 A JP2009024035 A JP 2009024035A JP 2010182819 A JP2010182819 A JP 2010182819A
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Prior art keywords
film
oxide semiconductor
semiconductor layer
layer
gate insulating
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Pending
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JP2009024035A
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English (en)
Japanese (ja)
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JP2010182819A5 (enExample
Inventor
Narihiro Morosawa
成浩 諸沢
Takanari Fujimori
隆成 藤森
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009024035A priority Critical patent/JP2010182819A/ja
Priority to US12/654,658 priority patent/US8426851B2/en
Priority to CN2010101080202A priority patent/CN101794823B/zh
Publication of JP2010182819A publication Critical patent/JP2010182819A/ja
Publication of JP2010182819A5 publication Critical patent/JP2010182819A5/ja
Priority to US13/665,487 priority patent/US9178072B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009024035A 2009-02-04 2009-02-04 薄膜トランジスタおよび表示装置 Pending JP2010182819A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009024035A JP2010182819A (ja) 2009-02-04 2009-02-04 薄膜トランジスタおよび表示装置
US12/654,658 US8426851B2 (en) 2009-02-04 2009-12-29 Thin film transistor and display device
CN2010101080202A CN101794823B (zh) 2009-02-04 2010-01-28 薄膜晶体管和显示装置
US13/665,487 US9178072B2 (en) 2009-02-04 2012-10-31 Thin film transistor and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009024035A JP2010182819A (ja) 2009-02-04 2009-02-04 薄膜トランジスタおよび表示装置

Publications (2)

Publication Number Publication Date
JP2010182819A true JP2010182819A (ja) 2010-08-19
JP2010182819A5 JP2010182819A5 (enExample) 2012-03-08

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JP2009024035A Pending JP2010182819A (ja) 2009-02-04 2009-02-04 薄膜トランジスタおよび表示装置

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Country Link
US (2) US8426851B2 (enExample)
JP (1) JP2010182819A (enExample)
CN (1) CN101794823B (enExample)

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JP2011097022A (ja) * 2009-10-27 2011-05-12 Samsung Mobile Display Co Ltd 有機発光表示装置及びその製造方法
WO2012029644A1 (ja) * 2010-08-30 2012-03-08 シャープ株式会社 半導体装置およびその製造方法
JP2012099796A (ja) * 2010-10-07 2012-05-24 Semiconductor Energy Lab Co Ltd 薄膜素子の作製方法及び半導体装置の作製方法
JP2012124463A (ja) * 2010-12-08 2012-06-28 Samsung Electronics Co Ltd 薄膜トランジスタアレイパネル
JP2012216806A (ja) * 2011-04-01 2012-11-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012256871A (ja) * 2011-05-19 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JPWO2012063614A1 (ja) * 2010-11-10 2014-05-12 株式会社日立製作所 半導体装置
US9177970B2 (en) 2013-03-04 2015-11-03 Joled Inc. Semiconductor device, method of manufacturing the same, method of manufacturing display unit, and method of manufacturing electronic apparatus
JPWO2013190838A1 (ja) * 2012-06-21 2016-02-08 株式会社Ｊｏｌｅｄ Ｔｆｔ基板およびその製造方法並びに有機ｅｌ表示装置およびその製造方法
KR20160078424A (ko) 2013-10-30 2016-07-04 가부시키가이샤 리코 전계 효과형 트랜지스터, 표시 소자, 영상 표시 장치 및 시스템
JP2016146506A (ja) * 2011-03-04 2016-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2016192579A (ja) * 2011-03-31 2016-11-10 株式会社半導体エネルギー研究所 半導体装置
JP2017055120A (ja) * 2010-09-13 2017-03-16 株式会社半導体エネルギー研究所 半導体装置
JP2017107949A (ja) * 2015-12-08 2017-06-15 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
KR101768487B1 (ko) * 2011-05-03 2017-08-18 엘지디스플레이 주식회사 박막트랜지스터 및 그를 포함하는 트랜지스터 어레이 기판
KR101790062B1 (ko) * 2011-08-24 2017-10-25 엘지디스플레이 주식회사 산화물 반도체층을 이용한 박막 트랜지스터 및 그의 제조방법
WO2017188657A1 (ko) * 2016-04-29 2017-11-02 고려대학교 산학협력단 투명 금속산화막/금속/투명 금속산화막 보호층을 구비한 비정질 산화물 박막 트랜지스터
KR101808432B1 (ko) * 2016-06-22 2018-01-18 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 및 그 제조방법
KR101827514B1 (ko) * 2011-08-18 2018-02-08 주성엔지니어링(주) 박막 트랜지스터 및 그 제조 방법
KR101829805B1 (ko) * 2016-02-19 2018-02-20 실리콘 디스플레이 (주) 산화물 반도체 트랜지스터 및 이의 제조 방법
KR20180031945A (ko) * 2016-09-21 2018-03-29 고려대학교 산학협력단 박막 트랜지스터
US10121898B2 (en) 2014-05-09 2018-11-06 Joled Inc. Thin-film transistor substrate and method of manufacturing the same
US10424672B2 (en) 2016-02-19 2019-09-24 Silicon Display Technology Oxide semiconductor transistor
US10505046B2 (en) 2012-11-30 2019-12-10 Ricoh Company, Ltd. Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor
CN111816668A (zh) * 2020-08-12 2020-10-23 成都中电熊猫显示科技有限公司 金属氧化物阵列基板的制造方法、阵列基板及显示面板
JP2020532117A (ja) * 2017-09-14 2020-11-05 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 Ｔｆｔデバイス及び液晶表示パネルの静電気保護回路

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KR20120065854A (ko) * 2010-12-13 2012-06-21 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법
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JP5766467B2 (ja) * 2011-03-02 2015-08-19 株式会社東芝 薄膜トランジスタ及びその製造方法、表示装置
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JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
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CN106486551A (zh) * 2016-12-07 2017-03-08 电子科技大学 一种铟镓锌氧薄膜晶体管及其制备方法
JP2018170324A (ja) * 2017-03-29 2018-11-01 株式会社ジャパンディスプレイ 表示装置
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CN109148303B (zh) * 2018-07-23 2020-04-10 深圳市华星光电半导体显示技术有限公司 薄膜晶体管的制备方法
KR102813697B1 (ko) * 2019-07-31 2025-05-28 삼성디스플레이 주식회사 표시 장치
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JPWO2012029644A1 (ja) * 2010-08-30 2013-10-28 シャープ株式会社 半導体装置およびその製造方法
KR101346874B1 (ko) 2010-08-30 2014-01-02 샤프 가부시키가이샤 반도체 장치 및 그 제조 방법
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