CN109148303B - 薄膜晶体管的制备方法 - Google Patents

薄膜晶体管的制备方法 Download PDF

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CN109148303B
CN109148303B CN201810812806.9A CN201810812806A CN109148303B CN 109148303 B CN109148303 B CN 109148303B CN 201810812806 A CN201810812806 A CN 201810812806A CN 109148303 B CN109148303 B CN 109148303B
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CN109148303A (zh
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谢华飞
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明公开了一种薄膜晶体管的制备方法，包括：在基板上依次制作栅极、栅极绝缘层、有源层；在有源层上制作蚀刻阻挡层；在蚀刻阻挡层及有源层上沉积欧姆接触层薄膜，及在欧姆接触层薄膜上沉积源漏极导电膜；处理源漏极导电膜形成图形化的源极、漏极，通过干法刻蚀工艺处理欧姆接触层薄膜形成图形化的欧姆接触层；欧姆接触层制作完成后，去除蚀刻阻挡层。由于本发明在欧姆接触层制作之前在晶体管沟道上方设置有蚀刻阻挡层，可以有效避免干刻欧姆接触层对于有源层的损伤，提高了晶体管的性能。

Description

薄膜晶体管的制备方法
技术领域
本发明涉及半导体制备技术领域，尤其涉及一种薄膜晶体管的制备方法。
背景技术
石墨烯、碳纳米管、碳化硅、二硫化钼、有机化合物等新型半导体材料的发现为晶体管的制备提供了新的研究方向。然而这些半导体材料都具有一个共同的特征，在制备晶体管的时候，通过干刻来进行图形化得到有源层，但以传统非晶硅工艺为例，在有源层与源漏极之间需加入高浓度掺杂的导电层以减少有源层与金属层的接触电阻形成欧姆接触，由于高浓度掺杂导电层通常以干刻进行图形化，而干刻会对石墨烯、碳纳米管、碳化硅等半导体材料有源层造成损伤，因此开发一种保护新型半导体材料的晶体管制备工艺具有非常重要的意义。
发明内容
鉴于现有技术存在的不足，本发明提供了一种薄膜晶体管的制备方法，可以避免干刻对于有源层的损伤，提高了晶体管的性能。
为了实现上述的目的，本发明采用了如下的技术方案：
一种薄膜晶体管的制备方法，包括：
提供一基板；
在所述基板上依次制作栅极、栅极绝缘层、有源层；
在所述有源层上制作一层与所述栅极图案相同并与所述栅极的图案正对的蚀刻阻挡层；
在所述蚀刻阻挡层及有源层上沉积欧姆接触层薄膜，及在所述欧姆接触层薄膜上沉积源漏极导电膜；
通过湿法刻蚀工艺处理所述源漏极导电膜形成图形化的源极、漏极；
通过干法刻蚀工艺处理所述欧姆接触层薄膜形成图形化的欧姆接触层，以去除位于所述源极、所述漏极之间的沟道区域的所述欧姆接触层薄膜；
通过湿法刻蚀工艺去除所述蚀刻阻挡层。
作为其中一种实施方式，在所述基板上制作栅极，具体包括：
在所述基板上沉积整面覆盖的导电薄膜；
在所述导电薄膜上沉积第一光刻胶薄膜；
对所述第一光刻胶薄膜进行曝光、显影，得到第一光刻胶图案；
利用酸液湿刻、洗脱去除未被所述第一光刻胶图案覆盖的所述导电薄膜，得到图形化的栅极。
作为其中一种实施方式，所述导电薄膜为ITO、Mo/Al、Ti/Cu、Cr/Au或Ag。
作为其中一种实施方式，在所述有源层上制作蚀刻阻挡层，具体包括：
在所述有源层上沉积整面覆盖的蚀刻阻挡层薄膜；
在所述蚀刻阻挡层薄膜上沉积第二光刻胶薄膜；
对所述第二光刻胶薄膜进行曝光、显影，得到第二光刻胶图案；
利用酸液湿刻、洗脱去除未被所述第二光刻胶图案覆盖的蚀刻阻挡层薄膜，得到图形化的蚀刻阻挡层。
作为其中一种实施方式，所述蚀刻阻挡层薄膜为ITO(氧化铟锡)、Mo/Al、Ti/Cu、金属氧化物或Ag。
作为其中一种实施方式，所述欧姆接触层薄膜为磷掺杂硅、硼掺杂硅、砷掺杂硅、氮掺杂硅或铝掺杂硅。
作为其中一种实施方式，所述的薄膜晶体管的制备方法还包括：在去除所述蚀刻阻挡层后，在所述源极、所述漏极之间的沟道区域内制作钝化层。
作为其中一种实施方式，制作钝化层具体包括：
以原子层沉积或化学气相沉积在所述源极、所述漏极、所述有源层表面制备整面的钝化保护膜；
对所述钝化保护膜图形化处理，仅保留与所述栅极正对的所述钝化保护膜，得到钝化层。
作为其中一种实施方式，所述钝化保护膜为有机绝缘材料、SiNx、SiO2、HfO2或Al2O3。
本发明的薄膜晶体管在欧姆接触层制作之前在晶体管沟道上方设置有蚀刻阻挡层，能有效避免干刻欧姆接触层对于有源层的损伤，提高了晶体管的电学性能。同时，在制作钝化层的过程中，可以将原本制作蚀刻阻挡层的光罩作为制作钝化层的光罩，实现了光罩的重复利用，也节省了额外设计光罩的成本。
附图说明
图1为本发明实施例的薄膜晶体管的结构示意图；
图2为本发明实施例的薄膜晶体管的制备方法流程图；
图3a～3l为本发明实施例的薄膜晶体管的制程的各步骤执行后的结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参阅图1，本发明实施例的薄膜晶体管主要包括基板10、依次形成在基板10上方的栅极20、栅极绝缘层30、有源层40、欧姆接触层60以及欧姆接触层60上的源极71、漏极72。
欧姆接触层60位于有源层40与源极71/漏极72之间，上下表面分别与有源层40、源极71/漏极72接触，可有效降低有源层40与源极71、漏极72之间的接触电阻，有利于提高晶体管电学性能。其中，基板10可以采用PI(Polyimide，聚酰亚胺)、PET(Polyethyleneterephthalate，聚对苯二甲酸乙二醇酯)、石英、SiO2、玻璃等材料制成，栅极20可以采用ITO、Mo/Al、Ti/Cu、Cr/Au、Ag等材料制成，栅极绝缘层30可以采用有机绝缘材料、SiNx、SiO2、HfO2、Al2O3等材料制成，有源层40可以采用石墨烯、SiC、MoS2、有机半导体、碳纳米管等材料制成，欧姆接触层60为掺杂导电层，可以采用磷掺杂硅、硼掺杂硅、砷掺杂硅、氮掺杂硅、铝掺杂硅等材料制成，源极71、漏极72可以是ITO、Mo/Al、Ti/Cu、Cr/Au、Ag等。
在欧姆接触层60上的源极71、漏极72之间的沟道区域内还可以制作有钝化层80，钝化层80填充在沟道内，对底部的有源层40起到一定的保护作用。钝化层80可以采用有机绝缘材料、SiNx、SiO2、HfO2、Al2O3等材料形成。
如图2～图3l，本实施例提供了一种薄膜晶体管的制备方法，主要包括：
S01、提供一基板10，该基板10可以采用PI、PET、石英、SiO2、玻璃等材料制成；
S02、在基板10上依次制作栅极20、栅极绝缘层30、有源层40(如图3a、3b、3c)；
其中，在基板10上制作栅极20的过程具体包括：
清洗基板10，并以物理气相沉积(PVD)或蒸镀的方式在基板10上沉积整面覆盖的导电薄膜；
在导电薄膜上沉积形成第一光刻胶薄膜，该导电薄膜可以为ITO、Mo/Al、Ti/Cu、Cr/Au或Ag；
对第一光刻胶薄膜进行曝光、显影后，未被曝光的光刻胶被去除，仅留下光照固化的光刻胶，形成第一光刻胶图案，然后利用酸液湿刻、洗脱等光刻工艺去除未被光刻胶图案覆盖的残留的导电薄膜材料，得到图形化的栅极20。
在基板10上制作栅极绝缘层30的过程具体包括：对栅极20制作后的基板10清洗后，继续在基板10表面进行原子层沉积(ALD)或化学气相沉积(CVD)制备整面的栅极绝缘层30，该栅极绝缘层30同时覆盖基板10和栅极20。
在基板10上制作有源层40的过程具体包括：对制作好栅极绝缘层30的基板10清洗后，以溶液制程或转印工艺制作半导体薄膜，然后通过在半导体薄膜表面涂布光刻胶，利用光罩曝光、显影以去除残留光刻胶，形成图案化的光刻胶，再对半导体薄膜进行等离子体干刻、洗脱残留半导体薄膜材料后使半导体薄膜图形化，得到沟道有源层40。
S03、在有源层40上制作一层与栅极20图案相同并与栅极20的图案正对的蚀刻阻挡层50(如图3d、3e)；
其中，在有源层40上制作蚀刻阻挡层50具体包括：
以物理气相沉积(PVD)或蒸镀等方式在有源层40上沉积整面覆盖的蚀刻阻挡层薄膜5，该蚀刻阻挡层薄膜5为金属或金属氧化物膜，例如ITO、Mo/Al、Ti/Cu、金属氧化物或Ag；
在蚀刻阻挡层薄膜5上沉积第二光刻胶薄膜；
对第二光刻胶薄膜进行曝光、显影后，得到第二光刻胶图案，利用酸液湿刻、洗脱等光刻工艺去除未被所述第二光刻胶图案覆盖的蚀刻阻挡层薄膜5，得到图形化的蚀刻阻挡层50，蚀刻阻挡层50制作完成后，可以用来保护下方的有源层40，避免后续制程工艺对有源层的特定区域造成损害。
S04、在有源层40和蚀刻阻挡层50表面沉积欧姆接触层薄膜6(如图3f)，并在欧姆接触层薄膜6表面沉积源漏极导电膜7(如图3g)；
作为其中一种实施方式，欧姆接触层薄膜6为磷掺杂硅、硼掺杂硅、砷掺杂硅、氮掺杂硅或铝掺杂硅，上述步骤S04中，采用化学气相沉积(CVD)法制备欧姆接触层薄膜6，源漏极导电膜7为ITO、Mo/Al、Ti/Cu、Cr/Au、Ag等，以物理气相沉积(PVD)或蒸镀的方式在基板10上沉积形成。
S05、通过湿法刻蚀工艺处理源漏极导电膜7形成图形化的源极71、漏极72(如图3h)，本实施例中，具体是先在源漏极导电膜7表面涂布光刻胶，通过对光刻胶曝光、显影后形成使其图案化，然后透过图案化的光刻胶对源漏极导电膜7酸液湿刻，被光刻胶遮挡的源漏导电膜材料受到保护，而未被光刻胶图案遮挡的源漏极导电膜材料则裸露而被腐蚀、去除，然后对剩余材料进行干燥后，即可形成图案化的源极71、漏极72；
S06、通过干法刻蚀工艺处理欧姆接触层薄膜6形成图形化的欧姆接触层60，以去除位于源极71、漏极72之间的沟道区域的欧姆接触层薄膜6(如图3i)；
该步骤具体是用等离子体干刻源漏极导电膜7下方的欧姆接触层薄膜6，使得源极71、漏极72之间的沟道区域下方的欧姆接触层薄膜贯穿，露出下方的蚀刻阻挡层50，然后清洗，去除残留的欧姆接触层薄膜材料。正是由于蚀刻阻挡层50位于源极71、漏极72之间的沟道区域正对的有源层40上方，当对沟道区域下方的欧姆接触层薄膜进行干刻的过程中，蚀刻阻挡层50可以作为保护层，避免了干刻工艺对于有源层40的损伤。
S07、通过湿法刻蚀工艺，利用酸液去除蚀刻阻挡层50(如图3j)，露出沟道内的有源层40；
S08、在欧姆接触层60上的源极71、漏极72之间的沟道区域内制作钝化层80(如图3k、3l)，使得钝化层80对沟道下方的有源层40进行覆盖保护，其中，制作钝化层80的步骤具体包括：
以原子层沉积(ALD)或化学气相沉积(CVD)在源极71、漏极72、有源层40表面制备整面的钝化保护膜8；
对钝化保护膜8图形化处理，仅保留与栅极20正对的钝化保护膜8，得到钝化层，这里，该钝化保护膜8为有机绝缘材料、SiNx、SiO2、HfO2或Al2O3。
在制作钝化层80的过程中，其钝化层80的图案与蚀刻阻挡层50的图案一致，二者可以共用同一个光罩，实现了光罩的重复利用，因此可以节省一次光罩的设计和制作成本。
本发明的薄膜晶体管在欧姆接触层制作之前在晶体管沟道上方设置有蚀刻阻挡层，能有效避免干刻欧姆接触层对有源层的损伤，提高了晶体管的电学性能；同时，在制作钝化层的过程中，可以将原本制作蚀刻阻挡层的光罩作为制作钝化层的光罩，实现了光罩的重复利用，也节省了额外设计光罩的成本。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (6)

1.一种薄膜晶体管的制备方法，其特征在于，包括：
提供一基板(10)；
在所述基板(10)上依次制作栅极(20)、栅极绝缘层(30)、有源层(40)；
在所述有源层(40)上制作一层与所述栅极(20)图案相同并与所述栅极(20)的图案正对的蚀刻阻挡层(50)；
在所述蚀刻阻挡层(50)及所述有源层(40)上沉积欧姆接触层薄膜(6)，及在所述欧姆接触层薄膜(6)上沉积源漏极导电膜(7)；
通过湿法刻蚀工艺处理所述源漏极导电膜(7)形成图形化的源极(71)、漏极(72)；
通过干法刻蚀工艺处理所述欧姆接触层薄膜(6)形成图形化的欧姆接触层(60)，以去除位于所述源极(71)、所述漏极(72)之间的沟道区域的所述欧姆接触层薄膜(6)；
通过湿法刻蚀工艺去除所述蚀刻阻挡层(50)，
在所述有源层(40)上制作蚀刻阻挡层(50)，具体包括：
在所述有源层(40)上沉积整面覆盖的蚀刻阻挡层薄膜(5)；
在所述蚀刻阻挡层薄膜(5)上沉积第二光刻胶薄膜；
对所述第二光刻胶薄膜进行曝光、显影，得到第二光刻胶图案；
利用酸液湿刻、洗脱去除未被所述第二光刻胶图案覆盖的蚀刻阻挡层薄膜，得到图形化的蚀刻阻挡层(50)，
在去除所述蚀刻阻挡层(50)后，在所述源极(71)、所述漏极(72)之间的沟道区域内制作钝化层(80)，
制作钝化层(80)具体包括：
以原子层沉积或化学气相沉积在所述源极(71)、所述漏极(72)、所述有源层(40)表面制备整面的钝化保护膜(8)；
对所述钝化保护膜(8)图形化处理，仅保留与所述栅极(20)正对的所述钝化保护膜(8)，得到钝化层(80)，
其中，采用与制作所述刻蚀阻挡层(50)的同一个光罩制作所述钝化层(80)。
2.根据权利要求1所述的薄膜晶体管的制备方法，其特征在于，在所述基板(10)上制作栅极(20)，具体包括：
在所述基板(10)上沉积整面覆盖的导电薄膜；
在所述导电薄膜上沉积第一光刻胶薄膜；
对所述第一光刻胶薄膜进行曝光、显影，得到第一光刻胶图案；
利用酸液湿刻、洗脱去除未被所述第一光刻胶图案覆盖的所述导电薄膜，得到图形化的栅极(20)。
3.根据权利要求2所述的薄膜晶体管的制备方法，其特征在于，所述导电薄膜为ITO、Mo/Al、Ti/Cu、Cr/Au或Ag。
4.根据权利要求1所述的薄膜晶体管的制备方法，其特征在于，所述蚀刻阻挡层薄膜(5)为ITO、Mo/Al、Ti/Cu、金属氧化物或Ag。
5.根据权利要求1所述的薄膜晶体管的制备方法，其特征在于，所述欧姆接触层薄膜(6)为磷掺杂硅、硼掺杂硅、砷掺杂硅、氮掺杂硅或铝掺杂硅。
6.根据权利要求1所述的薄膜晶体管的制备方法，其特征在于，所述钝化保护膜(8)为有机绝缘材料、SiNx、SiO2、HfO2或Al2O3。
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