JP4488039B2 - 薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置の製造方法 Download PDFInfo
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- JP4488039B2 JP4488039B2 JP2007192740A JP2007192740A JP4488039B2 JP 4488039 B2 JP4488039 B2 JP 4488039B2 JP 2007192740 A JP2007192740 A JP 2007192740A JP 2007192740 A JP2007192740 A JP 2007192740A JP 4488039 B2 JP4488039 B2 JP 4488039B2
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- microcrystalline silicon
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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Description
[H2]/[SiH4]を100以上にすることにより、成膜されるシリコン薄膜中の酸素濃度を1.5×1017cm-3以下にできると記載されており、酸素濃度の低減により結晶性の改善が図られると考えられる。
図1には、薄膜半導体装置の製造に用いる成膜装置の一例を示す全体構成図である。この図に示す成膜装置100は、平行平板型プラズマCVD装置であり、成膜処理が行われる処理室101、処理室101内において成膜処理が施される基板Wを固定保持するステージ103、ステージ103に対応配置された上部電極105、および上部電極105に接続された高周波電源107を備えている。
上記成膜装置100を用いた結晶性のシリコン薄膜の成膜方法の第1例を、図2のフローチャートを参照して説明する。
上記成膜装置100を用いた結晶性のシリコン薄膜の成膜方法の第2例を、図3のフローチャートを参照して説明する。この<成膜方法−2>は、<成膜方法−1>の核生成工程で用いた成膜ガスを変更した例である。
上記成膜装置100を用いた結晶性のシリコン薄膜の成膜方法の第3例を、図4のフローチャートを参照して説明する。この<成膜方法−3>は、<成膜方法−1>の核生成工程で用いた成膜ガスを変更した例である。
上記成膜装置100を用いた結晶性のシリコン薄膜の成膜方法の第4例を、図5のフローチャートを参照して説明する。この<成膜方法−4>は、特別な核生成工程を行うことなく、成膜工程S2’中において核生成を同時に行う方法である。
上記成膜装置100を用いた結晶性のシリコン薄膜の成膜方法の第5例として、n型やp型の不純物(ドーパント)が予め導入されたn型の微結晶シリコン薄膜またはp型の微結晶シリコン薄膜を成膜する場合を、<成膜方法−1>〜<成膜方法−4>に適用して説明する。
次に、上述した成膜方法を適用した薄膜半導体装置の製造方法の第1例を、図6〜図8の断面工程図に基づいて説明する。尚、第1例においては、CMOS構成のプレーナ型ボトムゲートTFTを備えた表示装置用の駆動パネルの作製に本発明を適用した実施の形態を説明する。
次に、上述した成膜方法を適用した薄膜半導体装置の製造方法の第2例を、図9〜図10の断面工程図に基づいて説明する。尚、第2例においては、nチャンネルのみの単チャネル構成のチャネルストップ型ボトムゲートTFTを備えた表示装置用の駆動パネルの作製に本発明を適用した実施の形態を説明する。
次に、上述した成膜方法を適用した薄膜半導体装置の製造方法の第3例を、図11〜図12の断面工程図に基づいて説明する。尚、第3例においては、nチャンネルのみの単チャネル構成のチャネルエッチ型ボトムゲートTFTを備えた表示装置用の駆動パネルの作製に本発明を適用した実施の形態を説明する。
Claims (1)
- SinH2n+2(n=2,3,…)で表される高次シラン系ガスと水素ガスと共に当該水
素ガスの流量以下の範囲の不活性ガスを成膜ガスに用いたプラズマCVD法により、結晶構造を含むシリコン薄膜を基板上に成膜する薄膜半導体装置の製造方法であって、
前記シリコン薄膜を基板上に成膜する際に、前記高次シラン系ガスの流量を1とした場合の成膜ガスの総流量を50以上とし、かつ、
前記シリコン薄膜を成膜する工程の前に、SinH2n+2(n=1,2,3…)で表され
るシラン系ガスと共に、水素ガスおよび不活性ガスを成膜ガスとして用いたプラズマCVD法によって、前記基板上に結晶核を生成する核生成工程を行い、
前記核生成工程において、前記不活性ガスの流量よりも前記水素ガスの流量を多くする
薄膜半導体装置の製造方法。
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JP2007192740A JP4488039B2 (ja) | 2007-07-25 | 2007-07-25 | 薄膜半導体装置の製造方法 |
TW097123946A TW200915395A (en) | 2007-07-25 | 2008-06-26 | Method of manufacturing thin film semiconductor device |
US12/216,081 US9328414B2 (en) | 2007-07-25 | 2008-06-30 | Method of manufacturing thin film semiconductor device |
KR1020080065896A KR101451104B1 (ko) | 2007-07-25 | 2008-07-08 | 박막 반도체장치의 제조 방법 |
CNA2008101337303A CN101355025A (zh) | 2007-07-25 | 2008-07-25 | 薄膜半导体装置的制造方法 |
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JP (1) | JP4488039B2 (ja) |
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JP5309387B2 (ja) * | 2007-09-28 | 2013-10-09 | 株式会社日立製作所 | 半導体層とこの半導体層を用いた半導体装置および表示装置 |
JP5311957B2 (ja) * | 2007-10-23 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JP5311955B2 (ja) * | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US7833885B2 (en) * | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
JP2010182819A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
CN102598282B (zh) | 2009-11-06 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
CN103081079B (zh) * | 2010-08-30 | 2014-08-13 | 夏普株式会社 | 半导体装置及其制造方法 |
WO2012127769A1 (ja) | 2011-03-22 | 2012-09-27 | パナソニック株式会社 | 半導体薄膜の形成方法、半導体装置、半導体装置の製造方法、基板及び薄膜基板 |
US8945418B2 (en) * | 2011-11-16 | 2015-02-03 | The United States Of America, As Represented By The Secretary Of The Navy | Melt stabilization and vapor-phase synthesis of cesium germanium halides |
TWI469360B (zh) | 2012-09-06 | 2015-01-11 | Innocom Tech Shenzhen Co Ltd | 顯示面板及顯示裝置 |
US8877617B2 (en) * | 2012-09-27 | 2014-11-04 | Sunpower Corporation | Methods and structures for forming and protecting thin films on substrates |
TWI527201B (zh) * | 2013-11-06 | 2016-03-21 | 友達光電股份有限公司 | 畫素結構及其製造方法 |
CN107275347B (zh) * | 2017-06-30 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种阵列基板、其制备方法及显示面板 |
CN110556284B (zh) * | 2018-06-04 | 2022-08-19 | 厦门乾照光电股份有限公司 | 发光二极管的芯片的制造方法和溅射方法 |
US20210335873A1 (en) * | 2020-04-28 | 2021-10-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Photoelectric conversion device, manufacturing method thereof, and display device |
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US5232868A (en) * | 1988-10-04 | 1993-08-03 | Agency Of Industrial Science And Technology | Method for forming a thin semiconductor film |
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JP3965215B2 (ja) | 1995-03-25 | 2007-08-29 | 純一 半那 | 半導体基材の製造方法 |
JPH10256164A (ja) | 1997-03-13 | 1998-09-25 | Matsushita Electric Ind Co Ltd | 結晶質膜の製造方法 |
US6337224B1 (en) * | 1997-11-10 | 2002-01-08 | Kaneka Corporation | Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method |
JP4321925B2 (ja) | 1999-08-24 | 2009-08-26 | 純一 半那 | 半導体基材の製造方法 |
JP2001237189A (ja) | 2000-02-24 | 2001-08-31 | Kanegafuchi Chem Ind Co Ltd | 結晶質シリコン系半導体薄膜の製造方法 |
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TWI313059B (ja) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
CN100565307C (zh) | 2004-02-13 | 2009-12-02 | 株式会社半导体能源研究所 | 半导体器件及其制备方法,液晶电视系统,和el电视系统 |
JP2006176859A (ja) | 2004-12-24 | 2006-07-06 | Canon Anelva Corp | シリコンナノ結晶構造体の作製方法 |
US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
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US20090029530A1 (en) | 2009-01-29 |
CN101355025A (zh) | 2009-01-28 |
US9328414B2 (en) | 2016-05-03 |
TW200915395A (en) | 2009-04-01 |
KR20090012071A (ko) | 2009-02-02 |
JP2009032757A (ja) | 2009-02-12 |
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