JP2011097022A - 有機発光表示装置及びその製造方法 - Google Patents
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- JP2011097022A JP2011097022A JP2010185106A JP2010185106A JP2011097022A JP 2011097022 A JP2011097022 A JP 2011097022A JP 2010185106 A JP2010185106 A JP 2010185106A JP 2010185106 A JP2010185106 A JP 2010185106A JP 2011097022 A JP2011097022 A JP 2011097022A
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- insulating layer
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- organic light
- metal
- light emitting
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- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
【解決手段】ゲート電極、ゲート電極と絶縁された活性層、ゲート電極と絶縁され、活性層にコンタクトされるソース及びドレイン電極、及びソース電極及びドレイン電極と活性層との間に介在された絶縁層を備える薄膜トランジスタと、薄膜トランジスタに電気的に連結された有機発光素子と、を備え、絶縁層は、活性層に接する第1絶縁層と、第1絶縁層上に金属酸化物で形成された第2絶縁層と、を備える有機発光表示装置及びその製造方法である。
【選択図】図2
Description
2 薄膜トランジスタ
21 ゲート電極
22 ゲート絶縁層
23 活性層
23a チャネル
24 絶縁層
242 第1絶縁層
244 第2絶縁層
245 金属層
246 第3絶縁層
248 第4絶縁層
25 ソース電極
26 ドレイン電極
27 パッシベーション層
28 画素定義膜
3 有機発光素子
31 第1電極
32 有機層
33 第2電極
Claims (24)
- ゲート電極、前記ゲート電極と絶縁された活性層、前記ゲート電極と絶縁され、前記活性層にコンタクトされるソース及びドレイン電極、及び前記ソース電極及びドレイン電極と前記活性層との間に介在された絶縁層を備える薄膜トランジスタと、
前記薄膜トランジスタに電気的に連結された有機発光素子と、を備え、
前記絶縁層は、
前記活性層に接する第1絶縁層と、
前記第1絶縁層上に金属酸化物で形成された第2絶縁層と、を備える有機発光表示装置。 - 第2絶縁層は、その厚さに対して金属含量の勾配を有することを特徴とする請求項1に記載の有機発光表示装置。
- 前記金属含量は、前記第1絶縁層に向かって低くなることを特徴とする請求項2に記載の有機発光表示装置。
- 前記金属は、アルミニウムまたはチタンであることを特徴とする請求項3に記載の有機発光表示装置。
- 前記第2絶縁層上に、金属酸化物または金属窒化物で形成された第3絶縁層をさらに備えることを特徴とする請求項1に記載の有機発光表示装置。
- 前記第3絶縁層上に備えられた第4絶縁層をさらに備えることを特徴とする請求項5に記載の有機発光表示装置。
- 前記第3絶縁層は、酸化アルミニウム、窒化アルミニウム、酸化チタンまたは窒化チタンを含むことを特徴とする請求項5に記載の有機発光表示装置。
- 前記第2絶縁層と第3絶縁層との間に金属層がさらに介在されたことを特徴とする請求項5に記載の有機発光表示装置。
- 前記金属層は、アルミニウムまたはチタンで形成されたことを特徴とする請求項8に記載の有機発光表示装置。
- 前記活性層は、酸化物半導体で形成されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記第1絶縁層は、酸化シリコンで形成されたことを特徴とする請求項1に記載の有機発光表示装置。
- 基板上にゲート電極を形成するステップと、
前記基板上に前記ゲート電極を覆うゲート絶縁層を形成するステップと、
前記ゲート絶縁層上に活性層を形成するステップと、
前記活性層の少なくともチャネル領域を覆う絶縁層を形成するステップと、
前記絶縁層上に前記活性層とコンタクトされるソース及びドレイン電極を形成するステップと、
前記ソース及びドレイン電極のうち一つと電気的に連結された有機発光素子を形成するステップと、を含み、
前記絶縁層を形成するステップは、
前記活性層の少なくともチャネル領域を覆う第1絶縁層を形成するステップと、
前記第1絶縁層上に金属酸化物で形成された第2絶縁層を形成するステップと、を含む有機発光表示装置の製造方法。 - 前記第2絶縁層を形成するステップは、
前記第1絶縁層上に金属層を形成するステップと、
少なくとも前記金属層に対して熱処理して、前記金属層の前記第1絶縁層に接する一部を金属酸化物で形成して前記第2絶縁層とするステップと、を含むことを特徴とする請求項12に記載の有機発光表示装置の製造方法。 - 第2絶縁層は、その厚さに対して金属含量の勾配を有することを特徴とする請求項12に記載の有機発光表示装置の製造方法。
- 前記金属含量は、前記第1絶縁層に向かって低くなることを特徴とする請求項14に記載の有機発光表示装置の製造方法。
- 前記金属は、アルミニウムまたはチタンであることを特徴とする請求項14に記載の有機発光表示装置の製造方法。
- 前記第2絶縁層上に、金属酸化物または金属窒化物で形成された第3絶縁層を形成するステップをさらに含むことを特徴とする請求項12に記載の有機発光表示装置の製造方法。
- 前記第3絶縁層を形成するステップは、
前記第1絶縁層上に金属層を形成するステップと、
前記金属層の前記第1絶縁層とは反対側の表面を酸化または窒化させて、前記金属層の一部を第3絶縁層で形成するステップと、を含むことを特徴とする請求項17に記載の有機発光表示装置の製造方法。 - 前記第3絶縁層上に備えられた第4絶縁層をさらに備えることを特徴とする請求項17に記載の有機発光表示装置の製造方法。
- 前記第3絶縁層は、酸化アルミニウム、窒化アルミニウム、酸化チタンまたは窒化チタンを含むことを特徴とする請求項17に記載の有機発光表示装置の製造方法。
- 前記第2絶縁層と第3絶縁層との間に金属層がさらに介在されたことを特徴とする請求項17に記載の有機発光表示装置の製造方法。
- 前記金属層は、アルミニウムまたはチタンで形成されたことを特徴とする請求項21に記載の有機発光表示装置の製造方法。
- 前記活性層は、酸化物半導体で形成されたことを特徴とする請求項12に記載の有機発光表示装置の製造方法。
- 前記第1絶縁層は、酸化シリコンで形成されたことを特徴とする請求項12に記載の有機発光表示装置の製造方法。
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