JP2009542008A - 光起電デバイス用の微結晶シリコン膜を堆積するための方法および装置 - Google Patents
光起電デバイス用の微結晶シリコン膜を堆積するための方法および装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 229910021424 microcrystalline silicon Inorganic materials 0.000 title claims abstract description 77
- 238000000151 deposition Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000008021 deposition Effects 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims abstract description 9
- 230000008025 crystallization Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 107
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000000203 mixture Substances 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005049 silicon tetrachloride Substances 0.000 claims description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims 3
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 72
- 238000006243 chemical reaction Methods 0.000 description 41
- 239000002585 base Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 238000005137 deposition process Methods 0.000 description 9
- 239000000725 suspension Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000005484 gravity Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【選択図】 図2
Description
[0001]本発明は、光起電デバイス用の微結晶シリコン膜を堆積するための方法および装置に関する。
[0002]光起電デバイス(PV)や太陽電池は、太陽光を直流(DC)電力に変換するデバイスである。PVや太陽電池は通常1つ以上のp−n接合を有している。各接合は半導体材料内に2つの異なる領域を備えており、ここで一方の側はp型領域と記され、もう一方はn型領域と記されている。PV電池のp−n接合が(光子からのエネルギーからなる)太陽光に曝露される場合、太陽光はPV効果によって直接、電気に変換される。PV太陽電池は特定量の電力を生成し、電池は、所望の量のシステム電力を送出するようにサイズ設定されたモジュールに傾斜される。PVモジュールは、多数のPV太陽電池を接続することによって作成されてから、特定のフレームおよびコネクタによってパネルに接合される。
Claims (25)
- 微結晶シリコン膜層を堆積するための方法であって、
約1平方メートルより大きな表面積を有する基板をプロセスチャンバに提供するステップと、
シランベースガスおよびH2ガスを含むガス混合物を前記プロセスチャンバに流すステップと、
前記プロセスチャンバにおいて前記ガス混合物から形成されたプラズマを維持するステップと、
毎分約20nmより大きな堆積レートで前記基板上に微結晶シリコン膜を堆積するステップであって、前記微結晶シリコン膜が約20パーセント〜約80パーセントの結晶化容積を有するステップと、
を備える方法。 - 前記微結晶シリコン膜がさらに、約0.1原子百分率〜約20原子百分率の水素含有量を備える、請求項1に記載の方法。
- 前記ガス混合物を流す前記ステップがさらに、
少なくとも約0.2slm/m2の流量で前記シランベースガスを流す工程と、
少なくとも約10slm/m2の流量でH2ガスを流す工程と、
を備える、請求項1に記載の方法。 - 前記ガス混合物を流す前記ステップがさらに、
約1:20〜約1:200の比で前記シランベースガスおよびH2ガスを流す工程を備える、請求項1に記載の方法。 - 前記ガス混合物に供給された前記H2ガスが堆積中に変更される、請求項3に記載の方法。
- 前記ガス混合物に供給された前記H2ガスが、比較的高いH2ガス比から比較的低いH2ガス比に供給される、請求項3に記載の方法。
- 前記シランベースガスが、モノシラン(SiH4)、ジシラン(Si2H6)、四フッ化シリコン(SiF4)、四塩化シリコン(SiCl4)およびジクロロシラン(SiH2Cl2)からなる群より選択される、請求項1に記載の方法。
- 前記ガス混合物を流す前記ステップがさらに、
約3トールより大きな範囲にプロセス圧力を維持する工程と、
摂氏約100度〜摂氏約400度に基板温度をコントロールする工程と、
を備える、請求項1に記載の方法。 - 少なくとも約100mワット/cm2のRF電力密度を印加するステップをさらに備える、請求項1に記載の方法。
- 前記微結晶シリコン膜が、約2〜約0.1の、X線回折における(220)回折ピークに対する(111)回折ピークの強度比を有する、請求項1に記載の方法。
- 前記ガス混合物を流す前記ステップがさらに、
約400ミル〜約1200ミルの範囲に前記プロセスチャンバの処理間隔を維持する工程を備える、請求項1に記載の方法。 - 前記基板温度をコントロールする前記ステップがさらに、
処理中に前記基板温度を冷却する工程を備える、請求項8に記載の方法。 - 前記微結晶シリコン膜を堆積する前記ステップがさらに、
前記微結晶シリコン膜の堆積前に、前記基板上に毎分約20nm未満の堆積レートで微結晶シリコンシード層を堆積する工程を備える、請求項1に記載の方法。 - 前記微結晶シリコンシード層が約50Å〜300Åの厚さを有する、請求項13に記載の方法。
- 前記微結晶シリコンシード層を堆積する前記ステップがさらに、
約1:100〜約1:1000のシランベースガス対H2比を有するガス混合物を供給する工程を備える、請求項14に記載の方法。 - シリコンベース光電変換器を製造するための方法であって、
プロセスチャンバに基板を提供するステップと、
前記基板上に光電変換器を形成するステップと、
を備え、前記光電変換器が、
前記基板上にp型半導体層を堆積する工程と、
CVDプロセスによって、毎分約20nmより大きな堆積レートで前記基板上の微結晶シリコン膜によってi型半導体層を堆積する工程であって、前記微結晶シリコン膜が約20パーセント〜約80パーセントの結晶化容積を有する工程と、
前記微結晶シリコン膜上にn型半導体層を堆積する工程と、
を備える方法。 - 前記光電変換器を形成する前に前記基板上に少なくとも1つの下地光電変換器を形成するステップをさらに備え、前記下地光電変換器が、
p型半導体を堆積する工程と、
CDVプロセスによってp型半導体層上のシリコン膜によってi型半導体層を堆積する工程と、
前記i型半導体層上にn型半導体層を堆積する工程と、
を備える、請求項16に記載の方法。 - 前記i型半導体層を堆積する前記ステップがさらに、
シランベースガスおよびH2ガスを含むガス混合物を前記プロセスチャンバに流す工程を備える、請求項16に記載の方法。 - 前記シランベースガスが少なくとも約0.2slm/m2の流量で流され、H2ガスが少なくとも約10slm/m2の流量で流される、請求項18に記載の方法。
- 前記ガス混合物に供給された前記H2ガスが堆積中に比較的高いH2ガス比から比較的低いH2ガス比に変更される、請求項18に記載の方法。
- 前記微結晶シリコン膜が、約0.1原子百分率〜約20原子百分率の水素含有量を有する水素化シリコン膜である、請求項16に記載の方法。
- 前記下地光電変換器における前記i型半導体が、アモルファスシリコン膜、微結晶シリコンおよびポリシリコン膜からなる群より選択されたシリコン材料である、請求項21に記載の方法。
- 前記基板上の前記光電変換器上に少なくとも1つの下地光電変換器を堆積するステップをさらに備え、前記下地光電変換器が、
p型半導体層を堆積する工程と、
CVDプロセスによってp型半導体層上のシリコン膜によってi型半導体層を堆積する工程と、
前記i型半導体層上にn型半導体層を堆積する工程と、
を備える、請求項16に記載の方法。 - 前記下地光電変換器における前記i型半導体が、アモルファスシリコン膜、微結晶シリコンおよびポリシリコン膜からなる群より選択されたシリコン材料である、請求項23に記載の方法。
- 前記p型半導体およびn型半導体が、アモルファスシリコン膜、微結晶シリコンおよびポリシリコン膜からなる群より選択されたシリコン材料によって形成され、前記シリコン材料が約5nm〜約50nmの厚さを有する、請求項16に記載の方法。
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US7923354B2 (en) | 2011-04-12 |
KR20090031492A (ko) | 2009-03-26 |
WO2007149945A2 (en) | 2007-12-27 |
US7655542B2 (en) | 2010-02-02 |
EP2041797A2 (en) | 2009-04-01 |
TW200810138A (en) | 2008-02-16 |
US20100003780A1 (en) | 2010-01-07 |
US20070298590A1 (en) | 2007-12-27 |
US7648892B2 (en) | 2010-01-19 |
WO2007149945A3 (en) | 2008-02-21 |
CN101322251B (zh) | 2012-11-28 |
EP2041797A4 (en) | 2014-01-01 |
CN101322251A (zh) | 2008-12-10 |
US20090053847A1 (en) | 2009-02-26 |
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