JP2009537997A - 薄膜太陽電池を製造するのに適した銅−亜鉛−錫析出のための金属メッキ組成及び方法 - Google Patents

薄膜太陽電池を製造するのに適した銅−亜鉛−錫析出のための金属メッキ組成及び方法 Download PDF

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JP2009537997A
JP2009537997A JP2009511397A JP2009511397A JP2009537997A JP 2009537997 A JP2009537997 A JP 2009537997A JP 2009511397 A JP2009511397 A JP 2009511397A JP 2009511397 A JP2009511397 A JP 2009511397A JP 2009537997 A JP2009537997 A JP 2009537997A
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copper
zinc
tin
plating
layer
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JP2009537997A5 (https=
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ホルガー キューンライン
イェルク シュルツェ
トルステン フォス
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アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Photovoltaic Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrolytic Production Of Metals (AREA)
JP2009511397A 2006-05-24 2007-05-15 薄膜太陽電池を製造するのに適した銅−亜鉛−錫析出のための金属メッキ組成及び方法 Pending JP2009537997A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06090086 2006-05-24
PCT/EP2007/004553 WO2007134843A2 (en) 2006-05-24 2007-05-15 Metal plating composition and method for the deposition of copper-zinc-tin suitable for manufacturing thin film solar cell

Publications (2)

Publication Number Publication Date
JP2009537997A true JP2009537997A (ja) 2009-10-29
JP2009537997A5 JP2009537997A5 (https=) 2010-03-04

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JP2009511397A Pending JP2009537997A (ja) 2006-05-24 2007-05-15 薄膜太陽電池を製造するのに適した銅−亜鉛−錫析出のための金属メッキ組成及び方法

Country Status (9)

Country Link
US (1) US9263609B2 (https=)
EP (3) EP2336394B1 (https=)
JP (1) JP2009537997A (https=)
CN (1) CN101522954B (https=)
AT (2) ATE516388T1 (https=)
DE (1) DE602007010141D1 (https=)
ES (2) ES2547566T3 (https=)
PT (1) PT2037006E (https=)
WO (1) WO2007134843A2 (https=)

Cited By (17)

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JP2011159920A (ja) * 2010-02-03 2011-08-18 Institute Of National Colleges Of Technology Japan 化合物半導体、光電素子及びその製造方法
KR101093663B1 (ko) 2010-01-21 2011-12-15 전남대학교산학협력단 단일 공정 전기증착법을 이용한 ｃｚｔｓ 박막의 제조방법
JP2013508988A (ja) * 2009-10-27 2013-03-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体膜を形成する方法およびその膜を含む光起電デバイス
WO2013077417A1 (ja) * 2011-11-25 2013-05-30 昭和シェル石油株式会社 Ｃｚｔｓ系薄膜太陽電池及びその製造方法
US8485126B2 (en) 2009-09-08 2013-07-16 Tokyo Ohka Kogyo Co., Ltd. Coating apparatus including a glove part and a controller for stopping coating
WO2013129484A1 (ja) * 2012-02-29 2013-09-06 Ikeda Shigeru 混合結晶、混合結晶製造方法、太陽電池、太陽電池製造方法及び電析浴
JP2014513413A (ja) * 2011-03-10 2014-05-29 サン−ゴバン グラス フランス 五元化合物半導体ＣＺＴＳＳｅおよび薄膜太陽電池の製造方法
KR101500858B1 (ko) * 2013-09-17 2015-03-12 전남대학교산학협력단 전착법을 이용한 주석 박막 및 태양전지 광흡수층용 czts 기반 박막의 제조방법
KR101507255B1 (ko) 2010-12-10 2015-03-30 후지필름 가부시키가이샤 광전 변환 소자 및 그것을 구비한 태양 전지
EP2858103A1 (en) 2013-08-30 2015-04-08 Tokyo Ohka Kogyo Co., Ltd. Chamber apparatus and heating method
US9027504B2 (en) 2011-06-02 2015-05-12 Tokyo Ohka Kogyo Co., Ltd. Heating apparatus, coating apparatus and heating method
US9186696B2 (en) 2009-09-08 2015-11-17 Tokyo Ohka Kogyo Co., Ltd. Coating apparatus including a chamber, sensor, removal unit and control device for application of liquid to a substrate
US9236283B2 (en) 2013-03-12 2016-01-12 Tokyo Ohka Kogyo Co., Ltd. Chamber apparatus and heating method
WO2016013670A1 (ja) * 2014-07-25 2016-01-28 凸版印刷株式会社 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および、光吸収層
US9299874B2 (en) 2010-10-13 2016-03-29 Tokyo Ohka Kogyo Co., Ltd. Coating apparatus and coating method
JP2016540893A (ja) * 2013-12-17 2016-12-28 ウミコレ・ガルファノテフニック・ゲーエムベーハー 電解質からの銅−スズ及び銅−スズ−亜鉛合金の析出
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