JP2009225612A - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JP2009225612A JP2009225612A JP2008069469A JP2008069469A JP2009225612A JP 2009225612 A JP2009225612 A JP 2009225612A JP 2008069469 A JP2008069469 A JP 2008069469A JP 2008069469 A JP2008069469 A JP 2008069469A JP 2009225612 A JP2009225612 A JP 2009225612A
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 33
- 238000000465 moulding Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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Abstract
【解決手段】 スナバコンデンサ13fを搭載したサージ電圧吸収素子基板13のP側接続端子13dとN側接続端子13eとを樹脂筐体14内でそれぞれP側端子8とN側端子9に接続することにより、スナバコンデンサを樹脂筐体内部のパワー半導体チップ近傍に配置することが可能となり、パワー半導体チップ両端に印加されるサージ電圧はスナバコンデンサにより吸収され、パワー半導体チップにおいて発生する電力損失をより低減させることが可能となった。
【選択図】 図1
Description
以下、本発明の実施の形態を図に基づいて説明する。図1は本発明に係るパワーモジュールの実施の形態を示す(a)平面図及び(b)A−A断面図である。なお説明の都合上、本図では樹脂筐体は除去された状態であり、樹脂筐体があるはずの部分は破線で示している。
Claims (7)
- 相対向する2つの主面を有する第1のパワー半導体チップと、
相対向する2つの主面を有する第2のパワー半導体チップと、
前記第1のパワー半導体チップを固着支持している第1のベース板と
前記第2のパワー半導体チップを固着支持している第2のベース板と、
前記第1のベース板に接続されたP側端子と、
前記第2のベース板と前記第1のパワー半導体チップの一方の主面に接続されたAC出力端子と、
前記第2のパワー半導体チップの一方の主面に接続されたN側端子と、
2つの接続端子を有するサージ電圧吸収素子基板と
前記第1のパワー半導体チップ、第2のパワー半導体チップ、第1のベース板、第2のベース板及びサージ電圧吸収素子基板を封入する樹脂筐体と、
を備え、
前記サージ電圧吸収素子基板は、
相対向する2つの主面を有する支持基板と、
前記支持基板の一方の主面上に形成された第1の薄膜配線と、
前記支持基板の他方の主面上に形成された第2の薄膜配線と、
前記第1の薄膜配線上に固定され、その一方の端子は前記接続端子の内一方の接続端子と電気的に接続され、その他方の端子は前記接続端子の内他方の接続端子と電気的に接続されたサージ電圧吸収素子と、
を備え、
前記一方の接続端子は前記樹脂筐体内で前記P側端子に接続され、前記他方の接続端子は前記樹脂筐体内で前記N側端子に接続されていることを特徴とするパワーモジュール。 - 前記支持基板は可撓性を有することを特徴とする請求項1記載のパワーモジュール。
- 前記サージ電圧吸収素子と前記一方又は他方の接続端子との間にヒューズが介挿されていることを特徴とする請求項1又は請求項2のいずれかに記載のパワーモジュール。
- 前記サージ電圧吸収素子は、2個以上直列に接続されているコンデンサであることを特徴とする請求項1乃至請求項3のいずれかに記載のパワーモジュール。
- 前記第2の薄膜配線は絶縁層で覆われていることを特徴とする請求項1乃至4のいずれかに記載のパワーモジュール。
- 前記P側端子又は前記N側端子は、前記サージ電圧吸収素子基板を挟み支持するための挟持部を有することを特徴とする請求項1乃至請求項5のいずれかに記載のパワーモジュール。
- 前記第1の薄膜配線と前記第2の薄膜配線とは前記支持基板を介して互いに対向する部分を有することを特徴とする請求項1乃至請求項6のいずれかに記載のパワーモジュール。
Priority Applications (1)
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JP2008069469A JP5169353B2 (ja) | 2008-03-18 | 2008-03-18 | パワーモジュール |
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JP2008069469A JP5169353B2 (ja) | 2008-03-18 | 2008-03-18 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2009225612A true JP2009225612A (ja) | 2009-10-01 |
JP5169353B2 JP5169353B2 (ja) | 2013-03-27 |
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JP2008069469A Active JP5169353B2 (ja) | 2008-03-18 | 2008-03-18 | パワーモジュール |
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JP (1) | JP5169353B2 (ja) |
Cited By (29)
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WO2012073571A1 (ja) * | 2010-12-01 | 2012-06-07 | 株式会社安川電機 | 電力変換装置 |
JP2012142351A (ja) * | 2010-12-28 | 2012-07-26 | National Institute Of Advanced Industrial & Technology | パワー半導体モジュール |
WO2013114565A1 (ja) * | 2012-01-31 | 2013-08-08 | 株式会社安川電機 | 電力変換装置および電力変換装置の製造方法 |
JP2013187464A (ja) * | 2012-03-09 | 2013-09-19 | Mitsubishi Electric Corp | 半導体装置 |
JP2013252009A (ja) * | 2012-06-01 | 2013-12-12 | Toyota Motor Corp | スナバコンデンサが搭載された半導体モジュールの保護回路 |
WO2014038299A1 (ja) * | 2012-09-10 | 2014-03-13 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
JPWO2012060123A1 (ja) * | 2010-11-02 | 2014-05-12 | 三菱電機株式会社 | 電動式パワーステアリング用パワーモジュールおよびこれを用いた電動式パワーステアリング駆動制御装置 |
JP5558645B1 (ja) * | 2013-10-02 | 2014-07-23 | 三菱電機株式会社 | Crスナバ回路 |
CN104467456A (zh) * | 2013-09-17 | 2015-03-25 | 株式会社安川电机 | 电力转换装置 |
JPWO2013114565A1 (ja) * | 2012-01-31 | 2015-05-11 | 株式会社安川電機 | 電力変換装置および電力変換装置の製造方法 |
US9142551B2 (en) | 2014-02-07 | 2015-09-22 | Kabushiki Kaisha Toshiba | Semiconductor device having a pair of transistors that are directly coupled and capacitively coupled |
US9214459B2 (en) | 2013-11-29 | 2015-12-15 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2016039724A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社ダイヘン | 電力変換回路、その製造方法、および、パワーコンディショナ |
JP5963912B1 (ja) * | 2015-05-14 | 2016-08-03 | 三菱電機株式会社 | 半導体モジュール |
US9729044B2 (en) | 2013-09-10 | 2017-08-08 | Denso Corporation | Power conversion device having two serially-connected switching elements |
DE102017200440A1 (de) | 2016-02-12 | 2017-08-17 | Mitsubishi Electric Corporation | Leistungsmodul |
WO2018143429A1 (ja) * | 2017-02-06 | 2018-08-09 | 三菱電機株式会社 | 電力用半導体モジュールおよび電力変換装置 |
WO2018194153A1 (ja) * | 2017-04-21 | 2018-10-25 | 三菱電機株式会社 | 電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法 |
JP6456454B1 (ja) * | 2017-10-24 | 2019-01-23 | 三菱電機株式会社 | パワーモジュール |
JP2019186983A (ja) * | 2018-04-02 | 2019-10-24 | 株式会社豊田中央研究所 | スナバコンデンサ内蔵半導体パワーモジュール |
WO2019239701A1 (ja) * | 2018-06-15 | 2019-12-19 | 株式会社村田製作所 | Crスナバ素子 |
WO2020054539A1 (en) * | 2018-09-12 | 2020-03-19 | Neturen Co., Ltd. | Snubber circuit, power semiconductor module, and induction heating power supply device |
CN111415925A (zh) * | 2019-01-07 | 2020-07-14 | 台达电子企业管理(上海)有限公司 | 电源模块及其制备方法 |
JPWO2020218298A1 (ja) * | 2019-04-24 | 2020-10-29 | ||
WO2020218298A1 (ja) * | 2019-04-24 | 2020-10-29 | ローム株式会社 | 半導体装置 |
JP2021069180A (ja) * | 2019-10-23 | 2021-04-30 | 三菱電機株式会社 | 電力変換装置および電力変換装置一体型回転電機 |
WO2022091633A1 (ja) * | 2020-10-30 | 2022-05-05 | 日立Astemo株式会社 | パワー半導体装置、電力変換装置、および電動システム |
US11399438B2 (en) | 2019-01-07 | 2022-07-26 | Delta Electronics (Shanghai) Co., Ltd. | Power module, chip-embedded package module and manufacturing method of chip-embedded package module |
US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
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Cited By (61)
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