JP2009200531A - 放射線を発する構成素子に用いられる導体フレームおよびハウジング、放射線を発する構成素子ならびに該構成素子を製造するための方法 - Google Patents
放射線を発する構成素子に用いられる導体フレームおよびハウジング、放射線を発する構成素子ならびに該構成素子を製造するための方法 Download PDFInfo
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Abstract
【解決手段】ワイヤ接続範囲10と接続ストリップ3a,3bとを有する支持部分に、別個に製作された熱的な接続部分4が挿入結合されており、ハウジングベースボディ1が成形材料から形成されており、該ハウジングベースボディ内に、電気的な接続ストリップがハウジングベースボディから導出されかつ熱的な接続部分の熱接続面が外部から熱的に接続可能となるように導体フレーム2が埋め込まれており、ハウジングベースボディが放射線出射窓8を有しており、該放射線出射窓内にチップ搭載範囲11が配置されるように熱的な接続部分4がハウジングベースボディ内に埋め込まれており、放射線出射窓8の側壁9が反射面として成形されている。
【選択図】図2
Description
V≦q・H
が満たされるように流込み材料容積Vを設定することが有利である。この場合、qは10mm2よりも小さな値、有利には7mm2である値を有するスケーリングファクタ(Skalierungsfaktor)である。
V≦q・H
が満たされるように放射線出射窓8を成形することが有利である。この場合、qは約7mm2である。この条件を満たすことにより、構成素子の機械的な安定性、ひいては負荷耐性および寿命が高められるので有利である。熱的な接続部分4を突出部19によってハウジングベースボディ1に固定することも、同じくこのために寄与する。
2 導体フレーム
3a,3b ろう付け接続ストリップ
4 熱的な接続部分
5 チップ
6 底面
7 ベースボディ載置面
8 切欠き
9 側面
10 ボンディングワイヤ接続範囲
11 チップ搭載範囲
12a,12b 電気的な接続部分
13 切欠き
14 流込み材料
15 リフレクタ全体
16 皿形リフレクタ
17 ワイヤ結合部
18 表面
19 突出部
20 溝
27 主放射方向
Claims (27)
- 放射線を発する構成素子、有利には発光ダイオード構成素子に用いられるハウジングであって、該ハウジングが導体フレームを有しており、該導体フレームが、少なくとも1つのチップ搭載範囲(11)と、少なくとも1つのワイヤ接続範囲(10)と、少なくとも1つの外部の電気的な接続ストリップ(3a,3b)とを有している形式のものにおいて、
−支持部分が設けられていて、該支持部分がワイヤ接続範囲(10)と接続ストリップ(3a,3b)とを有しており、該支持部分に、別個に製作された熱的な接続部分(4)が挿入結合されており、該熱的な接続部分(4)がチップ搭載範囲(11)を有しており、
−当該ハウジングがハウジングベースボディ(1)を有しており、該ハウジングベースボディ(1)が成形材料から形成されており、該ハウジングベースボディ(1)内に、電気的な接続ストリップ(3a,3b)がハウジングベースボディ(1)から導出されかつ熱的な接続部分(4)の熱接続面が外部から熱的に接続可能となるように導体フレーム(2)が埋め込まれており、
−ハウジングベースボディ(1)が放射線出射窓(8)を有しており、該放射線出射窓(8)内にチップ搭載範囲(11)が配置されるように熱的な接続部分(4)がハウジングベースボディ(1)内に埋め込まれており、
−放射線出射窓(8)の側壁(9)が反射面として成形されている、
ことを特徴とする、放射線を発する構成素子に用いられるハウジング。 - 支持部分がクランプまたはアイを有しており、該クランプまたはアイ内に熱的な接続部分(4)が挿入結合されている、請求項1記載のハウジング。
- 熱的な接続部分(4)と支持部分との間に、プレス結合部、リベット結合部、ろう付け結合部または溶接結合部が設けられている、請求項1または2記載のハウジング。
- ワイヤ接続範囲(10)が、チップ搭載範囲(11)に対して、該チップ搭載範囲(11)から見て高くされて配置されている、請求項1から3までのいずれか1項記載のハウジング。
- 熱的な接続部分(4)がCu、Al、Mo、Fe、NiまたはWを含有している、請求項1から4までのいずれか1項記載のハウジング。
- チップ搭載範囲(11)が、チップ搭載を改善するための表面コーティングを備えている、請求項1から5までのいずれか1項記載のハウジング。
- チップ搭載のための表面コーティングがAg被覆体またはAu被覆体を有している、請求項6記載のハウジング。
- 導体フレーム(2)がCuまたはFeを含有している、請求項1から7までのいずれか1項記載のハウジング。
- 外部の電気的な接続ストリップ(3a,3b)が、構成素子実装特性を改善するための表面コーティングを有している、請求項1から8までのいずれか1項記載のハウジング。
- 構成素子実装特性を改善するための表面コーティングが、Ag被覆体、Au被覆体、Sn被覆体またはZn被覆体を有している、請求項9記載のハウジング。
- 当該ハウジングが表面実装可能である、請求項1から10までのいずれか1項記載のハウジング。
- 放射線を発するチップ(5)を備えた、放射線を発する構成素子において、当該構成素子が、請求項1から11までのいずれか1項記載のハウジングを有していることを特徴とする、放射線を発する構成素子。
- チップ(5)が半導体チップである、請求項12記載の構成素子。
- チップ(5)が、少なくとも部分的に、放射線透過性の材料(14)、特に封止用の流込み樹脂またはモールドコンパウンドのようなプラスチック材料で被覆されている、請求項12または13記載の構成素子。
- プラスチック材料がエポキシ樹脂、アクリル樹脂、シリコーン樹脂またはこれらの樹脂の混合物を含有している、請求項14記載の構成素子。
- 放射線透過性の材料(14)の容積(V)に関して:
V≦q・H
が成立し、この場合、Hはチップ(5)の高さであり、qは10mm2よりも小さな値、有利には7mm2である値を有するスケーリングファクタである、請求項14または15記載の構成素子。 - チップ(5)が、熱的な接続部分(4)のチップ搭載範囲(11)に固定されている、請求項12から16までのいずれか1項記載の構成素子。
- チップ(5)が、チップ搭載範囲(11)に接着されているか、またはろう付けされている、請求項17記載の構成素子。
- チップ(5)が、硬ろうによってチップ搭載範囲(11)に固定されている、請求項18記載の構成素子。
- 硬ろうの溶融温度が260℃よりも高い、請求項19記載の構成素子。
- チップ(5)がワイヤ接続範囲(10)にワイヤ結合部(17)によって導電接続されている、請求項12から20までのいずれか1項記載の構成素子。
- 請求項12から21までのいずれか1項記載の放射線を発する構成素子を製造するための方法において、
−支持部分を準備し、
−該支持部分に、チップ搭載範囲(11)を有する熱的な接続部分(4)を挿入結合し、
−チップ搭載範囲(11)に、放射線を発するチップ(5)を被着させ、
−支持部分(2)と熱的な接続部分(4)とをハウジング成形材料内に埋め込む
ことを特徴とする、放射線を発する構成素子を製造するための方法。 - 熱的な接続部分(4)を、リベット締結、プレス締結またはろう付けによって支持部分に結合する、請求項22記載の方法。
- 支持部分と熱的な接続部分(4)とをハウジング成形材料内に埋め込む前に、チップ(5)をチップ搭載範囲(11)に被着させる、請求項22または23記載の方法。
- チップ(5)をチップ搭載範囲(11)にろう付けにより被着させ、ただしろう付け温度を260℃よりも高く設定する、請求項22から24までのいずれか1項記載の方法。
- チップ(5)を硬ろうによってチップ搭載範囲(11)に固定する、請求項22から25までのいずれか1項記載の方法。
- ハウジング成形材料内への支持部分(2)と熱的な接続部分(4)との埋込みを、射出成形法またはトランスファ成形法によって行う、請求項22から26までのいずれか1項記載の方法。
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Also Published As
Publication number | Publication date |
---|---|
EP1378013B1 (de) | 2015-09-30 |
US8097937B2 (en) | 2012-01-17 |
TW550775B (en) | 2003-09-01 |
CN101154703A (zh) | 2008-04-02 |
EP1378013A2 (de) | 2004-01-07 |
JP2004521506A (ja) | 2004-07-15 |
JP5264624B2 (ja) | 2013-08-14 |
WO2002084749A2 (de) | 2002-10-24 |
CN100359702C (zh) | 2008-01-02 |
US20040075100A1 (en) | 2004-04-22 |
WO2002084749A3 (de) | 2003-03-13 |
CN100539225C (zh) | 2009-09-09 |
CN1602555A (zh) | 2005-03-30 |
DE10117889A1 (de) | 2002-10-24 |
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