JP2009038368A - 半導体装置、電子機器、半導体装置の作製方法 - Google Patents

半導体装置、電子機器、半導体装置の作製方法 Download PDF

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Publication number
JP2009038368A
JP2009038368A JP2008179747A JP2008179747A JP2009038368A JP 2009038368 A JP2009038368 A JP 2009038368A JP 2008179747 A JP2008179747 A JP 2008179747A JP 2008179747 A JP2008179747 A JP 2008179747A JP 2009038368 A JP2009038368 A JP 2009038368A
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layer
single crystal
crystal semiconductor
insulating layer
substrate
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JP2009038368A5 (enExample
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Atsuo Isobe
敦生 磯部
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008179747A 2007-07-11 2008-07-10 半導体装置、電子機器、半導体装置の作製方法 Withdrawn JP2009038368A (ja)

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JP2008179747A JP2009038368A (ja) 2007-07-11 2008-07-10 半導体装置、電子機器、半導体装置の作製方法

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JP2009038368A5 JP2009038368A5 (enExample) 2011-08-18

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Cited By (10)

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JP2011009413A (ja) * 2009-06-25 2011-01-13 Seiko Epson Corp 半導体装置及び電子機器
JP2011114563A (ja) * 2009-11-26 2011-06-09 Murata Mfg Co Ltd 圧電デバイスの製造方法
JP2013089752A (ja) * 2011-10-18 2013-05-13 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
JP2013145878A (ja) * 2011-12-14 2013-07-25 Semiconductor Energy Lab Co Ltd 半導体装置、及び当該半導体装置を用いた表示装置
JPWO2015037327A1 (ja) * 2013-09-12 2017-03-02 ソニー株式会社 表示装置、その製造方法、および電子機器
KR20170124523A (ko) * 2016-04-01 2017-11-10 보에 테크놀로지 그룹 컴퍼니 리미티드 Tft 어레이 기판, 그 제조 방법, 및 디스플레이 디바이스
JP2018072840A (ja) * 2016-10-31 2018-05-10 エルジー ディスプレイ カンパニー リミテッド 超高解像度の液晶表示装置
JP2020036034A (ja) * 2014-02-28 2020-03-05 株式会社半導体エネルギー研究所 半導体装置
JP2020074386A (ja) * 2009-11-13 2020-05-14 株式会社半導体エネルギー研究所 半導体装置
JP2021158358A (ja) * 2009-10-30 2021-10-07 株式会社半導体エネルギー研究所 半導体装置

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JP2009076879A (ja) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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CN103367353A (zh) * 2012-03-30 2013-10-23 东莞万士达液晶显示器有限公司 主动元件及主动元件阵列基板
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KR102392059B1 (ko) * 2013-07-29 2022-04-28 삼성전자주식회사 반도체 소자 및 그 제조 방법
TWI566328B (zh) * 2013-07-29 2017-01-11 高效電源轉換公司 具有用於產生附加構件之多晶矽層的氮化鎵電晶體
KR102099881B1 (ko) 2013-09-03 2020-05-15 삼성전자 주식회사 반도체 소자 및 그 제조 방법
CN104752426A (zh) * 2013-12-26 2015-07-01 昆山国显光电有限公司 共栅极立体式cmos器件、oled器件及其制造方法
CN104409514A (zh) * 2014-11-21 2015-03-11 京东方科技集团股份有限公司 一种薄膜晶体管结构、其制作方法及相关装置
CN104779257B (zh) * 2015-04-14 2017-11-03 深圳市华星光电技术有限公司 Tft布局结构
CN108292675A (zh) * 2015-12-26 2018-07-17 英特尔公司 用共享公共栅极的堆叠晶体管构建的动态逻辑
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102716282B1 (ko) * 2016-09-12 2024-10-11 삼성디스플레이 주식회사 테스트부를 갖는 표시장치
CN108400139B (zh) * 2017-02-08 2020-12-01 京东方科技集团股份有限公司 阵列基板及其制作方法以及显示装置
GB2561004B (en) 2017-03-31 2022-06-01 Pragmatic Printing Ltd Electronic structures and their methods of manufacture
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KR102691133B1 (ko) * 2018-09-13 2024-08-01 엘지디스플레이 주식회사 Tft 기판 및 이를 포함한 발광표시장치
TWI710820B (zh) * 2019-03-28 2020-11-21 友達光電股份有限公司 顯示裝置
CN110060998B (zh) * 2019-04-29 2022-05-17 厦门天马微电子有限公司 一种反相电路结构、栅极驱动电路及显示面板
CN110098235B (zh) * 2019-05-08 2021-09-24 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
US11574845B2 (en) 2019-08-07 2023-02-07 Tokyo Electron Limited Apparatus and method for simultaneous formation of diffusion break, gate cut, and independent N and P gates for 3D transistor devices
CN110648629B (zh) * 2019-10-31 2023-09-22 厦门天马微电子有限公司 显示面板及其制作方法、显示装置
CN111341793B (zh) * 2020-04-03 2022-06-03 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
KR102675926B1 (ko) * 2020-06-30 2024-06-17 엘지디스플레이 주식회사 표시장치
CN112490254B (zh) * 2020-12-03 2022-10-04 Tcl华星光电技术有限公司 一种阵列基板、显示面板及其制备方法
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Cited By (37)

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JP2011009413A (ja) * 2009-06-25 2011-01-13 Seiko Epson Corp 半導体装置及び電子機器
JP2024050838A (ja) * 2009-10-30 2024-04-10 株式会社半導体エネルギー研究所 半導体装置
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US8049253B2 (en) 2011-11-01
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