JP2009033111A - 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 - Google Patents

露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Download PDF

Info

Publication number
JP2009033111A
JP2009033111A JP2008137409A JP2008137409A JP2009033111A JP 2009033111 A JP2009033111 A JP 2009033111A JP 2008137409 A JP2008137409 A JP 2008137409A JP 2008137409 A JP2008137409 A JP 2008137409A JP 2009033111 A JP2009033111 A JP 2009033111A
Authority
JP
Japan
Prior art keywords
liquid
exposure
cleaning
exposure apparatus
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008137409A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009033111A5 (enExample
Inventor
Hiroyuki Nagasaka
博之 長坂
Yasushi Yoda
安史 依田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2008137409A priority Critical patent/JP2009033111A/ja
Publication of JP2009033111A publication Critical patent/JP2009033111A/ja
Publication of JP2009033111A5 publication Critical patent/JP2009033111A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008137409A 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Pending JP2009033111A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008137409A JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007140474 2007-05-28
JP2007177217 2007-07-05
JP2008137409A JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Publications (2)

Publication Number Publication Date
JP2009033111A true JP2009033111A (ja) 2009-02-12
JP2009033111A5 JP2009033111A5 (enExample) 2011-05-12

Family

ID=40075059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008137409A Pending JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Country Status (5)

Country Link
US (2) US8189168B2 (enExample)
JP (1) JP2009033111A (enExample)
KR (1) KR20100031694A (enExample)
TW (1) TW200903589A (enExample)
WO (1) WO2008146819A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267404A (ja) * 2008-04-24 2009-11-12 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法
JP2011029599A (ja) * 2009-05-14 2011-02-10 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
KR20170113709A (ko) * 2009-11-09 2017-10-12 가부시키가이샤 니콘 노광 장치, 노광 방법, 노광 장치의 메인터넌스 방법, 노광 장치의 조정 방법, 및 디바이스 제조 방법
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US9632426B2 (en) * 2011-01-18 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ immersion hood cleaning
WO2014020595A2 (en) * 2012-07-30 2014-02-06 Technion Research & Development Foundation Limited Energy conversion system
KR102793378B1 (ko) * 2018-09-12 2025-04-08 램 리써치 코포레이션 입자들을 측정하기 위한 방법 및 장치
US11720032B2 (en) 2018-09-24 2023-08-08 Asml Netherlands B.V. Process tool and an inspection method
CN109622545B (zh) * 2019-01-11 2024-06-04 夏绎 一种在超声波发射面与清洗物表面之间保持清洗水的结构
US11032941B2 (en) * 2019-03-28 2021-06-08 Intel Corporation Modular thermal energy management designs for data center computing
US12427446B2 (en) * 2022-03-23 2025-09-30 Semes Co., Ltd. Liquid supplying unit and liquid supplying method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179909A (ja) * 2004-12-20 2006-07-06 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP2007043145A (ja) * 2005-07-08 2007-02-15 Nikon Corp 液浸露光用基板、露光方法及びデバイス製造方法
WO2007034838A1 (ja) * 2005-09-21 2007-03-29 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007102580A (ja) * 2005-10-05 2007-04-19 Nikon Corp 位置決め手法、及び位置決め装置
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2007123882A (ja) * 2005-10-24 2007-05-17 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ装置及び方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
WO1998024115A1 (en) * 1996-11-28 1998-06-04 Nikon Corporation Aligner and method for exposure
USRE40043E1 (en) * 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
WO1999027568A1 (en) * 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) * 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
JP4505989B2 (ja) 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6611316B2 (en) * 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW550635B (en) * 2001-03-09 2003-09-01 Toshiba Corp Manufacturing system of electronic devices
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
WO2004019128A2 (en) * 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
EP1571695A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
KR101381538B1 (ko) 2003-02-26 2014-04-04 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
SG10201603067VA (en) * 2003-04-11 2016-05-30 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
SG189557A1 (en) * 2003-04-11 2013-05-31 Nikon Corp Cleanup method for optics in immersion lithography
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2466382B1 (en) * 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP4438747B2 (ja) 2003-09-26 2010-03-24 株式会社ニコン 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法
WO2005055296A1 (ja) 2003-12-03 2005-06-16 Nikon Corporation 露光装置、露光方法及びデバイス製造方法、並びに光学部品
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101309428B1 (ko) 2004-02-04 2013-09-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2005286068A (ja) * 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
WO2005124833A1 (ja) 2004-06-21 2005-12-29 Nikon Corporation 露光装置及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
JP4656448B2 (ja) 2004-09-30 2011-03-23 株式会社ニコン 投影光学装置及び露光装置
JP2006147639A (ja) * 2004-11-16 2006-06-08 Canon Inc 露光装置
JP4784513B2 (ja) * 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
JP5019170B2 (ja) * 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179909A (ja) * 2004-12-20 2006-07-06 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP2007043145A (ja) * 2005-07-08 2007-02-15 Nikon Corp 液浸露光用基板、露光方法及びデバイス製造方法
WO2007034838A1 (ja) * 2005-09-21 2007-03-29 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2007102580A (ja) * 2005-10-05 2007-04-19 Nikon Corp 位置決め手法、及び位置決め装置
JP2007123882A (ja) * 2005-10-24 2007-05-17 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ装置及び方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267404A (ja) * 2008-04-24 2009-11-12 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法
US8823918B2 (en) 2008-04-24 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US10175585B2 (en) 2008-04-24 2019-01-08 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
JP2011029599A (ja) * 2009-05-14 2011-02-10 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法
US8564757B2 (en) 2009-05-14 2013-10-22 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus

Also Published As

Publication number Publication date
US20090251672A1 (en) 2009-10-08
KR20100031694A (ko) 2010-03-24
WO2008146819A1 (ja) 2008-12-04
US8189168B2 (en) 2012-05-29
US20120204913A1 (en) 2012-08-16
TW200903589A (en) 2009-01-16

Similar Documents

Publication Publication Date Title
JP2009033111A (ja) 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
JP5151981B2 (ja) 露光装置及びデバイス製造方法
TWI610147B (zh) 液浸構件、曝光裝置、曝光方法、以及元件製造方法
TWI569105B (zh) A liquid recovery system, a liquid immersion exposure apparatus, a liquid immersion exposure method, and a device manufacturing method
JP5264504B2 (ja) 洗浄用液体、洗浄方法、液体発生装置、露光装置、及びデバイス製造方法
JP2008288589A (ja) 露光装置、液浸システム、露光方法、及びデバイス製造方法
JP5018249B2 (ja) クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法
US20120062858A1 (en) Cleaning method, device manufacturing method, exposure apparatus, and device manufacturing system
JP2010528449A (ja) 露光装置、液浸システム、露光方法、及びデバイス製造方法
JP2009016422A (ja) クリーニング装置、露光装置、デバイス製造方法、及びクリーニング方法
JP2009021498A (ja) 露光装置、液浸システム、及びデバイス製造方法
JP2008166811A (ja) 露光装置、露光方法、並びにデバイス製造方法
JP5018277B2 (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2009267401A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2008300771A (ja) 液浸露光装置、デバイス製造方法、及び露光条件の決定方法
JP2012195606A (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2012094794A (ja) 洗浄方法、露光装置及びデバイスの製造方法
JP2010267808A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2009044089A (ja) 露光方法、デバイス製造方法、及びデバイス製造システム
JP2009147235A (ja) 露光方法、露光装置、デバイス製造方法、リソグラフィシステム及びメンテナンス方法
JP2008166376A (ja) 基板処理方法及び基板処理システム、並びにデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110921

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120808

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120814

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121211