JP2007123882A - 液浸リソグラフィ装置及び方法 - Google Patents
液浸リソグラフィ装置及び方法 Download PDFInfo
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- JP2007123882A JP2007123882A JP2006287405A JP2006287405A JP2007123882A JP 2007123882 A JP2007123882 A JP 2007123882A JP 2006287405 A JP2006287405 A JP 2006287405A JP 2006287405 A JP2006287405 A JP 2006287405A JP 2007123882 A JP2007123882 A JP 2007123882A
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- 238000000671 immersion lithography Methods 0.000 title description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 361
- 239000012530 fluid Substances 0.000 claims abstract description 175
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000003384 imaging method Methods 0.000 claims abstract description 32
- 238000007654 immersion Methods 0.000 claims description 46
- 238000001459 lithography Methods 0.000 abstract description 21
- 239000002245 particle Substances 0.000 abstract description 11
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- 238000011109 contamination Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 53
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 33
- 230000008569 process Effects 0.000 description 33
- 238000010586 diagram Methods 0.000 description 26
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- 238000002604 ultrasonography Methods 0.000 description 20
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- 238000004519 manufacturing process Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
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- 238000001035 drying Methods 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
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- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
【解決手段】 リソグラフィ装置は、結像レンズモジュールと、結像レンズモジュールの下方に配置され基板を保持するよう構成された基板テーブルと、リソグラフィ装置の洗浄に適合された洗浄モジュールとを備える。洗浄モジュールは、超音波ユニット,スクラバー,流体噴出器,静電洗浄器,及びそれらの組み合わせから成る群から選択されたものである。
【選択図】図1
Description
(1)2004年8月4日に出願され、本発明と同一の発明者及び同一の譲受人である米国特許出願第(代理人整理番号TSMC2003−1545)号「高周波超音波液浸リソグラフィ露光装置及び方法」
(2)2005年10月15日に出願され、本発明と同一の発明者及び同一の譲受人である米国特許出願第(代理人整理番号TSMC2004−0553)号「液浸リソグラフィに適した露光方法及び装置」
(3)出願され(日時不明)、本発明と同一の発明者及び同一の譲受人である米国特許出願第(代理人整理番号TSMC2005−0022)号「液浸リソグラフィに適した装置及び方法」
110 基板テーブル
120 レンズシステム
130 液浸流体保持モジュール
132a,132b,134,136 開口部
150 超音波ユニット
160,210,210a 洗浄流体供給器
170 ヒーター
220,220a 洗浄流体排液器
300,400,500 リソグラフィシステム
310,410,510 分離洗浄モジュール
610 噴出器
620 構成
630 ガス,液体
640,740 粒子
700 静電洗浄モジュール
710,720,730 板体
725,735 導電性板体
750 帯電ガス,粒子
800 洗浄スクラバー
810 洗浄ヘッド
820 ホルダ
830 連結装置
840 モータ
850 超音波ユニット
860 洗浄流体供給器
862a,862b,862c 入口
864a,864b,864c バルブ
900 洗浄噴出器
1000,1100,1210 洗浄モジュール
1010 洗浄フレーム
1012 パージガス送出システム
1014 吸引排液システム
1020 洗浄ユニット
1220 ウエハ
1410,1430 洗浄タンク
1412 化学物質入口
1420 洗浄溶液
1500 方法
1502,1504,1506,1508,1510 ステップ
Claims (15)
- 結像レンズモジュールと、
結像レンズモジュールの下方に配置され基板を保持するよう構成された基板テーブルと、
リソグラフィ装置の洗浄に適合された洗浄モジュールとを備え、
前記洗浄モジュールは、超音波ユニット,スクラバー,流体噴出器,静電洗浄器,及びそれらの組み合わせから成る群から選択されたものであるリソグラフィ装置。 - 前記結像レンズモジュールと前記基板テーブル上の基板との間の空間へ液浸流体を供給するよう構成された液浸流体保持モジュールをさらに備える請求項1の装置。
- 前記洗浄モジュールが、前記結像レンズ,前記基板テーブル,及び前記液浸流体保持モジュールのうち少なくとも一つを洗浄するよう作動可能である請求項2の装置。
- 前記洗浄モジュールが、前記液浸流体保持モジュール及び前記基板テーブルのうち少なくとも一つと一体化された請求項2の装置。
- 前記洗浄モジュールが、ロボットと一体化された請求項1の装置。
- 前記洗浄モジュールが、回転,振動,水平動作,及びそれらの組み合わせから成る群から選択されたモードで移動するよう構成される請求項1の装置。
- 前記洗浄モジュールが、前記洗浄モジュールで使用するための洗浄流体を供給するために、洗浄流体入口を備える請求項1の装置。
- 前記洗浄モジュールが、洗浄流体を引き込むよう構成された吸引構成部を備える請求項1の装置。
- 前記スクラバーが、スポンジとブラシとから選択されたものである請求項1の装置。
- 前記流体噴出器が、様々な圧力,角度,及び動作で作動可能なものである請求項1の装置。
- 結像レンズモジュールと、
結像レンズの下方に配置され基板を固定するよう構成された基板テーブルと、
結像レンズモジュールとステージ上の基板との間の空間へ流体を供給するよう構成された流体モジュールと、
液浸リソグラフィ装置を洗浄するために超音波エネルギーを供給するよう構成された超音波モジュールと
を備える液浸リソグラフィ装置。 - 前記超音波モジュールが、前記ステージ及び前記流体モジュールに内蔵される請求項11の装置。
- 前記超音波モジュールが、洗浄を最も効果的にするための動作が可能である請求項11の装置。
- 前記超音波モジュールが、およそ1ミリワットから1キロワットまでにわたる範囲の力と、およそ1KHzから1GHzまでにわたる範囲の周波数とで超音波エネルギーを供給するよう作動可能である請求項11の装置。
- スクラバー,流体噴出器,超音波ユニット,及び静電洗浄器のうち少なくとも一つを備えた洗浄モジュールを具備するリソグラフィ装置の準備と、
前記洗浄モジュールを利用することによる前記リソグラフィ装置に対する洗浄工程の実行と、
結像層で表面を覆われた基板に対する露光工程の実行と
から構成される方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72956505P | 2005-10-24 | 2005-10-24 | |
US11/427,421 US7986395B2 (en) | 2005-10-24 | 2006-06-29 | Immersion lithography apparatus and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007123882A true JP2007123882A (ja) | 2007-05-17 |
JP4532455B2 JP4532455B2 (ja) | 2010-08-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006287405A Active JP4532455B2 (ja) | 2005-10-24 | 2006-10-23 | 液浸リソグラフィ装置及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7986395B2 (ja) |
EP (1) | EP1777589B1 (ja) |
JP (1) | JP4532455B2 (ja) |
KR (1) | KR100823664B1 (ja) |
DE (1) | DE602006014341D1 (ja) |
SG (2) | SG174047A1 (ja) |
TW (1) | TWI342987B (ja) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008010843A (ja) * | 2006-05-23 | 2008-01-17 | Nikon Corp | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
JP2008235872A (ja) * | 2007-02-15 | 2008-10-02 | Asml Holding Nv | 液浸リソグラフィにおけるinsituレンズクリーニングのためのシステムおよび方法 |
WO2008146819A1 (ja) * | 2007-05-28 | 2008-12-04 | Nikon Corporation | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
JP2009016421A (ja) * | 2007-07-02 | 2009-01-22 | Nikon Corp | 露光装置、デバイス製造方法、及びクリーニング方法 |
JP2009033163A (ja) * | 2007-07-24 | 2009-02-12 | Asml Netherlands Bv | リソグラフィ装置及び汚染除去又は防止方法 |
JP2009033161A (ja) * | 2007-07-24 | 2009-02-12 | Asml Netherlands Bv | リソグラフィ装置及び汚染除去又は防止方法 |
JP2009088509A (ja) * | 2007-09-27 | 2009-04-23 | Asml Netherlands Bv | リソグラフィ装置およびリソグラフィ装置を清浄する方法 |
JP2009177143A (ja) * | 2007-12-20 | 2009-08-06 | Asml Netherlands Bv | リソグラフィ装置及びインライン洗浄装置 |
JP2009188383A (ja) * | 2007-12-18 | 2009-08-20 | Asml Netherlands Bv | リソグラフィ装置及び液浸リソグラフィ装置の表面を洗浄する方法 |
JP2010093245A (ja) * | 2008-10-07 | 2010-04-22 | Nikon Corp | 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法 |
US7733459B2 (en) | 2003-08-29 | 2010-06-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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EP1777589B1 (en) | 2010-05-19 |
DE602006014341D1 (de) | 2010-07-01 |
EP1777589A2 (en) | 2007-04-25 |
SG174047A1 (en) | 2011-09-29 |
TWI342987B (en) | 2011-06-01 |
KR100823664B1 (ko) | 2008-04-18 |
US20070091287A1 (en) | 2007-04-26 |
KR20070044377A (ko) | 2007-04-27 |
EP1777589A3 (en) | 2007-11-21 |
TW200717196A (en) | 2007-05-01 |
SG131829A1 (en) | 2007-05-28 |
US7986395B2 (en) | 2011-07-26 |
JP4532455B2 (ja) | 2010-08-25 |
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