JP2008235872A - 液浸リソグラフィにおけるinsituレンズクリーニングのためのシステムおよび方法 - Google Patents
液浸リソグラフィにおけるinsituレンズクリーニングのためのシステムおよび方法 Download PDFInfo
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- JP2008235872A JP2008235872A JP2008028305A JP2008028305A JP2008235872A JP 2008235872 A JP2008235872 A JP 2008235872A JP 2008028305 A JP2008028305 A JP 2008028305A JP 2008028305 A JP2008028305 A JP 2008028305A JP 2008235872 A JP2008235872 A JP 2008235872A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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Abstract
【解決手段】露光ゾーン内に液体の流れを生成する液浸液供給デバイス230および液浸液放出デバイスを含むシャワーヘッドと、液浸液に接触した投影光学システムの部分をクリーニングガスによってクリーニングするクリーニングデバイスとを含む液浸リソグラフィ装置が提供される。クリーニングデバイスは、露光ゾーンに入るクリーニングガスの流れを生成するガス供給デバイス250およびガス放出デバイス260を含む。液浸リソグラフィシステムの露光ゾーンに液浸流体を提供する液浸流体シャワーヘッドを有する液浸リソグラフィシステム内で、最終レンズ要素136をinsituクリーニングする。
【選択図】図2
Description
[00041] 本発明の例示的実施形態を提示してきた。本発明は、これらの例に制限されない。これらの例は、制限ではなく、例示のために提示されたものである。代替物(本明細書で説明したものの等価物、拡張、変形、逸脱など)が、本明細書に含まれる教示に基づいて、当業者には明白になる。このような代替物は、本発明の範囲および精神に含まれる。
Claims (24)
- エネルギ源と、
投影光学システムと、
上に置かれた基板を動かすステージと、
前記投影光学システムと前記基板の間に液体の流れを生成する液浸液供給デバイスおよび液浸液放出デバイスを含むシャワーヘッドと、
前記液浸液に接触した前記投影光学システムの部分をクリーニングガスによってクリーニングするクリーニングデバイスと、
を含む液浸リソグラフィ装置。 - 前記クリーニングデバイスが、
ガス供給デバイスと、
ガス放出デバイスとを含み、前記ガス供給デバイスが、前記投影光学システムと前記ステージの間にクリーニングガスの流れを生成する、
請求項1に記載の液浸リソグラフィ装置。 - 前記ガス供給デバイスがオゾン生成ユニットを備える、請求項2に記載の液浸リソグラフィ装置。
- 前記ガス供給デバイスおよびガス放出デバイスが前記シャワーヘッドに取り付けられる、請求項2に記載の液浸リソグラフィ装置。
- 前記ガス供給デバイスが、前記液浸液供給デバイスに配置されたガス供給ベント、および前記液浸液放出デバイスに配置されたガス放出ベントを含む、請求項4に記載の液浸リソグラフィ装置。
- 前記クリーニングデバイスがさらに、クリーニングプロセス中に液浸液に曝されている前記投影光学レンズシステムの部分を照明する紫外線光源を備える、請求項2に記載の液浸リソグラフィ装置。
- 前記紫外線光源は、クリーニングガスが前記投影光学システムと前記ステージの間を流れている間に、クリーニングすべき前記投影光学システム要素に当たる紫外線光を送る、請求項6に記載の液浸リソグラフィ装置。
- 前記ウェーハステージが、前記紫外線光源からの光をクリーニングすべき表面に送れるようにする領域を含む。請求項6に記載の液浸リソグラフィ装置。
- ウェーハステージが、紫外線光源からの光を反射して、前記紫外線光源からの光をクリーニングすべき表面に送れるようにする前記ウェーハステージの領域に通すミラーを含む、請求項6に記載の液浸リソグラフィ装置。
- 前記エネルギ源は、クリーニングガスが前記投影光学システムと前記ステージの間を流れている間に、前記投影光学システム要素に当たる紫外線光を送る、請求項6に記載の液浸リソグラフィ装置。
- 前記クリーニングガスが空気、酸素増強空気または酸化希ガスを含む、請求項1に記載の液浸リソグラフィ装置。
- さらに、最終レンズ要素を通って送られたエネルギドーズレベルを感知して、最終レンズ要素のクリーニングが必要か判断するドーズセンサを備える、請求項1に記載の液浸リソグラフィ装置。
- 前記ドーズセンサが前記ステージに配置される、請求項12に記載の液浸リソグラフィ装置。
- 最終レンズ要素を通して送られたエネルギドーズレベルを感知して、前記最終レンズ要素のクリーニングが必要か判断するドーズセンサと、
前記最終レンズ要素に当たる紫外線光を生成する紫外線ランプと、
を備える液浸リソグラフィウェーハステージ。 - さらに、前記紫外線ランプからの光を前記最終レンズ要素に反射するミラーシステムを備える、請求項14に記載の液浸リソグラフィウェーハステージ。
- 液浸リソグラフィシステムの露光ゾーンに液浸流体を提供する液浸流体シャワーヘッドを有する液浸リソグラフィシステム内で、最終レンズ要素をinsituクリーニングする方法であって、
(a)前記シャワーヘッドおよび前記露光ゾーンから前記液浸流体を排出し、
(b)クリーニングガスを、前記シャワーヘッドを通して、前記液浸流体に曝された前記最終レンズ要素表面の向こう側まで送り、
(c)前記最終レンズ要素が乾燥した後、前記最終レンズ要素から除去された汚染物質からデブリを生成するステップ(b)にて送られている前記クリーニングガスが存在する状態で、前記最終レンズ要素を紫外線光に曝し、
(d)前記最終レンズ要素から、ステップ(c)にて発生した前記デブリを洗い流す
ことを含む方法。 - さらに、ステップ(a)とステップ(b)の間に、乾燥ガスを、前記シャワーヘッドを通して、前記液浸流体に曝された前記最終レンズ要素表面の向こう側まで送るステップを含む、請求項16に記載の方法。
- 前記クリーニングガスが空気、酸素増強空気、酸化希ガス、またはオゾンを含む、請求項16に記載の方法。
- ステップ(b)および(c)の継続時間が、前記最終レンズ要素に累積したデブリの厚さに基づいて、数秒から数時間の範囲である、請求項16に記載の方法。
- 前記最終レンズ要素を紫外線光に曝すことが、前記液浸リソグラフィシステムを通して前記紫外線光を送ることを含む、請求項16に記載の方法。
- 前記最終レンズ要素を紫外線光に曝すことが、前記最終レンズ要素の下から前記紫外線光を送ることを含む、請求項16に記載の方法。
- 液浸リソグラフィシステムの露光ゾーンに液浸流体を提供する液浸流体シャワーヘッドを有する液浸リソグラフィシステム内で、最終レンズ要素をinsituクリーニングする方法であって、
(a)前記シャワーヘッドおよび前記露光ゾーンから前記液浸流体を排出し、
(b)前記最終レンズ要素を乾燥し、
(c)クリーニングガスを、前記シャワーヘッドを通して、前記最終レンズ要素から除去された汚染物質からデブリを生成する前記液浸流体に曝された前記最終レンズ要素の向こう側まで送り、
(d)ステップ(c)にて発生したデブリを前記最終レンズ要素から洗い流す
ことを含む方法。 - 前記クリーニングガスがオゾンを含む、請求項22に記載の方法。
- ステップ(b)および(c)の継続時間が、前記最終レンズ要素に累積したデブリの厚さに基づいて、数秒から数時間の範囲である、請求項22に記載の方法。
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US12/128,035 US8817226B2 (en) | 2007-02-15 | 2008-05-28 | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
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US11/706,434 US8654305B2 (en) | 2007-02-15 | 2007-02-15 | Systems and methods for insitu lens cleaning in immersion lithography |
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CN (2) | CN101320221B (ja) |
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- 2007-02-15 US US11/706,434 patent/US8654305B2/en not_active Expired - Fee Related
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2008
- 2008-02-08 JP JP2008028305A patent/JP2008235872A/ja active Pending
- 2008-02-14 KR KR1020080013561A patent/KR100994791B1/ko not_active IP Right Cessation
- 2008-02-14 CN CN2008101092043A patent/CN101320221B/zh not_active Expired - Fee Related
- 2008-02-14 CN CN2011100225694A patent/CN102073221B/zh not_active Expired - Fee Related
- 2008-02-14 TW TW097105188A patent/TW200844680A/zh unknown
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- 2010-07-22 KR KR1020100070881A patent/KR20100097083A/ko not_active Application Discontinuation
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JP2010093245A (ja) * | 2008-10-07 | 2010-04-22 | Nikon Corp | 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法 |
JP2011151058A (ja) * | 2010-01-19 | 2011-08-04 | Nikon Corp | 洗浄方法、露光装置、及びデバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101320221A (zh) | 2008-12-10 |
CN102073221B (zh) | 2013-11-06 |
CN102073221A (zh) | 2011-05-25 |
KR20080076809A (ko) | 2008-08-20 |
KR20100097083A (ko) | 2010-09-02 |
US8654305B2 (en) | 2014-02-18 |
US20080198343A1 (en) | 2008-08-21 |
KR100994791B1 (ko) | 2010-11-16 |
TW200844680A (en) | 2008-11-16 |
CN101320221B (zh) | 2011-01-12 |
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