|
JPS57117238A
(en)
|
1981-01-14 |
1982-07-21 |
Nippon Kogaku Kk <Nikon> |
Exposing and baking device for manufacturing integrated circuit with illuminometer
|
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
|
CN1244018C
(zh)
|
1996-11-28 |
2006-03-01 |
株式会社尼康 |
曝光方法和曝光装置
|
|
US6262796B1
(en)
|
1997-03-10 |
2001-07-17 |
Asm Lithography B.V. |
Positioning device having two object holders
|
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
|
JPH1116816A
(ja)
|
1997-06-25 |
1999-01-22 |
Nikon Corp |
投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
|
|
WO1999027568A1
(en)
|
1997-11-21 |
1999-06-03 |
Nikon Corporation |
Projection aligner and projection exposure method
|
|
JPH11162831A
(ja)
*
|
1997-11-21 |
1999-06-18 |
Nikon Corp |
投影露光装置及び投影露光方法
|
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
|
US6897963B1
(en)
|
1997-12-18 |
2005-05-24 |
Nikon Corporation |
Stage device and exposure apparatus
|
|
US6208407B1
(en)
|
1997-12-22 |
2001-03-27 |
Asm Lithography B.V. |
Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
|
|
AU1262499A
(en)
|
1998-03-11 |
1999-09-27 |
Nikon Corporation |
Ultraviolet laser apparatus and exposure apparatus comprising the ultraviolet laser apparatus
|
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
|
JPH11307430A
(ja)
*
|
1998-04-23 |
1999-11-05 |
Canon Inc |
露光装置およびデバイス製造方法ならびに駆動装置
|
|
JP4505989B2
(ja)
|
1998-05-19 |
2010-07-21 |
株式会社ニコン |
収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
|
|
WO2001035168A1
(en)
|
1999-11-10 |
2001-05-17 |
Massachusetts Institute Of Technology |
Interference lithography utilizing phase-locked scanning beams
|
|
US20020041377A1
(en)
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
|
WO2002069049A2
(en)
|
2001-02-27 |
2002-09-06 |
Asml Us, Inc. |
Simultaneous imaging of two reticles
|
|
TW550635B
(en)
*
|
2001-03-09 |
2003-09-01 |
Toshiba Corp |
Manufacturing system of electronic devices
|
|
TW529172B
(en)
|
2001-07-24 |
2003-04-21 |
Asml Netherlands Bv |
Imaging apparatus
|
|
TWI249082B
(en)
|
2002-08-23 |
2006-02-11 |
Nikon Corp |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
|
KR100588124B1
(ko)
|
2002-11-12 |
2006-06-09 |
에이에스엠엘 네델란즈 비.브이. |
리소그래피장치 및 디바이스제조방법
|
|
SG121818A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US7110081B2
(en)
*
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1429188B1
(en)
|
2002-11-12 |
2013-06-19 |
ASML Netherlands B.V. |
Lithographic projection apparatus
|
|
CN101424881B
(zh)
|
2002-11-12 |
2011-11-30 |
Asml荷兰有限公司 |
光刻投射装置
|
|
EP2495613B1
(en)
|
2002-11-12 |
2013-07-31 |
ASML Netherlands B.V. |
Lithographic apparatus
|
|
SG158745A1
(en)
*
|
2002-12-10 |
2010-02-26 |
Nikon Corp |
Exposure apparatus and method for producing device
|
|
DE60326384D1
(de)
|
2002-12-13 |
2009-04-09 |
Koninkl Philips Electronics Nv |
Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
|
|
ATE335272T1
(de)
|
2002-12-19 |
2006-08-15 |
Koninkl Philips Electronics Nv |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
|
EP1598855B1
(en)
|
2003-02-26 |
2015-04-22 |
Nikon Corporation |
Exposure apparatus and method, and method of producing apparatus
|
|
SG139733A1
(en)
|
2003-04-11 |
2008-02-29 |
Nikon Corp |
Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
|
|
EP2161621B1
(en)
*
|
2003-04-11 |
2018-10-24 |
Nikon Corporation |
Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
|
|
TWI424470B
(zh)
*
|
2003-05-23 |
2014-01-21 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
|
EP1486827B1
(en)
|
2003-06-11 |
2011-11-02 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7317504B2
(en)
*
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
JP4697138B2
(ja)
|
2003-07-08 |
2011-06-08 |
株式会社ニコン |
液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
|
|
JP4444920B2
(ja)
|
2003-09-19 |
2010-03-31 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
KR101238134B1
(ko)
|
2003-09-26 |
2013-02-28 |
가부시키가이샤 니콘 |
투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
|
|
EP3139214B1
(en)
|
2003-12-03 |
2019-01-30 |
Nikon Corporation |
Exposure apparatus, exposure method, and device manufacturing method
|
|
EP1697798A2
(en)
|
2003-12-15 |
2006-09-06 |
Carl Zeiss SMT AG |
Projection objective having a high aperture and a planar end surface
|
|
WO2005059645A2
(en)
|
2003-12-19 |
2005-06-30 |
Carl Zeiss Smt Ag |
Microlithography projection objective with crystal elements
|
|
US7589822B2
(en)
|
2004-02-02 |
2009-09-15 |
Nikon Corporation |
Stage drive method and stage unit, exposure apparatus, and device manufacturing method
|
|
US8208119B2
(en)
|
2004-02-04 |
2012-06-26 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
|
JP2005286068A
(ja)
|
2004-03-29 |
2005-10-13 |
Canon Inc |
露光装置及び方法
|
|
KR101245070B1
(ko)
|
2004-06-21 |
2013-03-18 |
가부시키가이샤 니콘 |
노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
|
|
JP4677833B2
(ja)
*
|
2004-06-21 |
2011-04-27 |
株式会社ニコン |
露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
|
|
JP2006032750A
(ja)
*
|
2004-07-20 |
2006-02-02 |
Canon Inc |
液浸型投影露光装置、及びデバイス製造方法
|
|
US7224427B2
(en)
|
2004-08-03 |
2007-05-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Megasonic immersion lithography exposure apparatus and method
|
|
JP4772306B2
(ja)
*
|
2004-09-06 |
2011-09-14 |
株式会社東芝 |
液浸光学装置及び洗浄方法
|
|
CN101052916B
(zh)
|
2004-09-30 |
2010-05-12 |
株式会社尼康 |
投影光学设备和曝光装置
|
|
JP2006147639A
(ja)
*
|
2004-11-16 |
2006-06-08 |
Canon Inc |
露光装置
|
|
WO2006062065A1
(ja)
*
|
2004-12-06 |
2006-06-15 |
Nikon Corporation |
メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
|
|
US7880860B2
(en)
*
|
2004-12-20 |
2011-02-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20060250588A1
(en)
|
2005-05-03 |
2006-11-09 |
Stefan Brandl |
Immersion exposure tool cleaning system and method
|
|
JP2006313766A
(ja)
*
|
2005-05-06 |
2006-11-16 |
Nikon Corp |
基板保持装置及びステージ装置並びに露光装置
|
|
JP5045008B2
(ja)
*
|
2005-07-08 |
2012-10-10 |
株式会社ニコン |
液浸露光用基板、露光方法及びデバイス製造方法
|
|
JP2007116073A
(ja)
*
|
2005-09-21 |
2007-05-10 |
Nikon Corp |
露光方法及び露光装置、並びにデバイス製造方法
|
|
JPWO2007034838A1
(ja)
*
|
2005-09-21 |
2009-03-26 |
株式会社ニコン |
露光装置及び露光方法、並びにデバイス製造方法
|
|
JP2007102580A
(ja)
*
|
2005-10-05 |
2007-04-19 |
Nikon Corp |
位置決め手法、及び位置決め装置
|
|
US7986395B2
(en)
*
|
2005-10-24 |
2011-07-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography apparatus and methods
|
|
KR20090023331A
(ko)
*
|
2006-05-23 |
2009-03-04 |
가부시키가이샤 니콘 |
메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법
|
|
US8564759B2
(en)
*
|
2006-06-29 |
2013-10-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Apparatus and method for immersion lithography
|
|
US7900641B2
(en)
*
|
2007-05-04 |
2011-03-08 |
Asml Netherlands B.V. |
Cleaning device and a lithographic apparatus cleaning method
|