TW200903589A - Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method - Google Patents

Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method Download PDF

Info

Publication number
TW200903589A
TW200903589A TW097119660A TW97119660A TW200903589A TW 200903589 A TW200903589 A TW 200903589A TW 097119660 A TW097119660 A TW 097119660A TW 97119660 A TW97119660 A TW 97119660A TW 200903589 A TW200903589 A TW 200903589A
Authority
TW
Taiwan
Prior art keywords
liquid
exposure
cleaning
substrate
vibration
Prior art date
Application number
TW097119660A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroyuki Nagasaka
Yasushi Yoda
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200903589A publication Critical patent/TW200903589A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097119660A 2007-05-28 2008-05-28 Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method TW200903589A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007140474 2007-05-28
JP2007177217 2007-07-05

Publications (1)

Publication Number Publication Date
TW200903589A true TW200903589A (en) 2009-01-16

Family

ID=40075059

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097119660A TW200903589A (en) 2007-05-28 2008-05-28 Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method

Country Status (5)

Country Link
US (2) US8189168B2 (enExample)
JP (1) JP2009033111A (enExample)
KR (1) KR20100031694A (enExample)
TW (1) TW200903589A (enExample)
WO (1) WO2008146819A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603155B (zh) * 2009-11-09 2017-10-21 尼康股份有限公司 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法
TWI827669B (zh) * 2018-09-12 2024-01-01 美商蘭姆研究公司 用於量測微粒的方法和設備

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036709A1 (nl) 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US9632426B2 (en) * 2011-01-18 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ immersion hood cleaning
WO2014020595A2 (en) * 2012-07-30 2014-02-06 Technion Research & Development Foundation Limited Energy conversion system
US11720032B2 (en) 2018-09-24 2023-08-08 Asml Netherlands B.V. Process tool and an inspection method
CN109622545B (zh) * 2019-01-11 2024-06-04 夏绎 一种在超声波发射面与清洗物表面之间保持清洗水的结构
US11032941B2 (en) * 2019-03-28 2021-06-08 Intel Corporation Modular thermal energy management designs for data center computing
US12427446B2 (en) * 2022-03-23 2025-09-30 Semes Co., Ltd. Liquid supplying unit and liquid supplying method

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
WO1998024115A1 (en) * 1996-11-28 1998-06-04 Nikon Corporation Aligner and method for exposure
USRE40043E1 (en) * 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
WO1999027568A1 (en) * 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) * 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
JP4505989B2 (ja) 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6611316B2 (en) * 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW550635B (en) * 2001-03-09 2003-09-01 Toshiba Corp Manufacturing system of electronic devices
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
WO2004019128A2 (en) * 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
EP1571695A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
KR101381538B1 (ko) 2003-02-26 2014-04-04 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
SG10201603067VA (en) * 2003-04-11 2016-05-30 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
SG189557A1 (en) * 2003-04-11 2013-05-31 Nikon Corp Cleanup method for optics in immersion lithography
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2466382B1 (en) * 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP4438747B2 (ja) 2003-09-26 2010-03-24 株式会社ニコン 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法
WO2005055296A1 (ja) 2003-12-03 2005-06-16 Nikon Corporation 露光装置、露光方法及びデバイス製造方法、並びに光学部品
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101309428B1 (ko) 2004-02-04 2013-09-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2005286068A (ja) * 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
WO2005124833A1 (ja) 2004-06-21 2005-12-29 Nikon Corporation 露光装置及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
JP4656448B2 (ja) 2004-09-30 2011-03-23 株式会社ニコン 投影光学装置及び露光装置
JP2006147639A (ja) * 2004-11-16 2006-06-08 Canon Inc 露光装置
JP4784513B2 (ja) * 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP5045008B2 (ja) * 2005-07-08 2012-10-10 株式会社ニコン 液浸露光用基板、露光方法及びデバイス製造方法
KR20080053497A (ko) * 2005-09-21 2008-06-13 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2007102580A (ja) * 2005-10-05 2007-04-19 Nikon Corp 位置決め手法、及び位置決め装置
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP5019170B2 (ja) * 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603155B (zh) * 2009-11-09 2017-10-21 尼康股份有限公司 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法
US10061214B2 (en) 2009-11-09 2018-08-28 Nikon Corporation Exposure apparatus, exposure method, exposure apparatus maintenance method, exposure apparatus adjustment method and device manufacturing method
TWI827669B (zh) * 2018-09-12 2024-01-01 美商蘭姆研究公司 用於量測微粒的方法和設備

Also Published As

Publication number Publication date
JP2009033111A (ja) 2009-02-12
US20090251672A1 (en) 2009-10-08
KR20100031694A (ko) 2010-03-24
WO2008146819A1 (ja) 2008-12-04
US8189168B2 (en) 2012-05-29
US20120204913A1 (en) 2012-08-16

Similar Documents

Publication Publication Date Title
TW200903589A (en) Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method
TWI508130B (zh) An exposure apparatus, an element manufacturing method, a cleaning method, and a cleaning member
TWI569105B (zh) A liquid recovery system, a liquid immersion exposure apparatus, a liquid immersion exposure method, and a device manufacturing method
JP5264504B2 (ja) 洗浄用液体、洗浄方法、液体発生装置、露光装置、及びデバイス製造方法
TW200805000A (en) Exposure method and apparatus, maintenance method and device manufacturing method
TW200846837A (en) Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
TW200809915A (en) Exposure apparatus, maintenance method, exposure method and device manufacturing method
US20080284991A1 (en) Exposure apparatus, immersion system, exposing method, and device fabricating method
TW200837505A (en) Liguid immersion exposure apparatus, exposure method, and method for producing device
US20120062858A1 (en) Cleaning method, device manufacturing method, exposure apparatus, and device manufacturing system
JP2008300775A (ja) クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法
JP2009016422A (ja) クリーニング装置、露光装置、デバイス製造方法、及びクリーニング方法
US8654306B2 (en) Exposure apparatus, cleaning method, and device fabricating method
TW201222160A (en) Cleaning method, device fabricating method, cleaning substrate, liquid immersion member, immersion exposure apparatus and dummy substrate
US8451425B2 (en) Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US20080204687A1 (en) Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
JP5018277B2 (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2009267401A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2009212132A (ja) 基板、基板の処理方法及び処理装置、基板の処理システム、露光方法及び露光装置、並びにデバイス製造方法
JP2009111325A (ja) 評価方法及び評価装置、基板の処理方法及び処理システム、基板処理装置、露光装置、並びにデバイス製造方法
JP2010267808A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2009044089A (ja) 露光方法、デバイス製造方法、及びデバイス製造システム
JP2012094794A (ja) 洗浄方法、露光装置及びデバイスの製造方法
JP2010056365A (ja) 露光方法、及びデバイス製造方法
JP2012195606A (ja) 露光装置、デバイス製造方法、及びクリーニング方法