JP2010182555A5 - - Google Patents

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Publication number
JP2010182555A5
JP2010182555A5 JP2009025645A JP2009025645A JP2010182555A5 JP 2010182555 A5 JP2010182555 A5 JP 2010182555A5 JP 2009025645 A JP2009025645 A JP 2009025645A JP 2009025645 A JP2009025645 A JP 2009025645A JP 2010182555 A5 JP2010182555 A5 JP 2010182555A5
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JP
Japan
Prior art keywords
target material
ultraviolet light
extreme ultraviolet
light source
droplet
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Application number
JP2009025645A
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English (en)
Japanese (ja)
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JP5670619B2 (ja
JP2010182555A (ja
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Priority to JP2009025645A priority Critical patent/JP5670619B2/ja
Priority claimed from JP2009025645A external-priority patent/JP5670619B2/ja
Publication of JP2010182555A publication Critical patent/JP2010182555A/ja
Publication of JP2010182555A5 publication Critical patent/JP2010182555A5/ja
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Publication of JP5670619B2 publication Critical patent/JP5670619B2/ja
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JP2009025645A 2009-02-06 2009-02-06 極端紫外光源装置 Active JP5670619B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009025645A JP5670619B2 (ja) 2009-02-06 2009-02-06 極端紫外光源装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009025645A JP5670619B2 (ja) 2009-02-06 2009-02-06 極端紫外光源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014255747A Division JP5955372B2 (ja) 2014-12-18 2014-12-18 極端紫外光源装置

Publications (3)

Publication Number Publication Date
JP2010182555A JP2010182555A (ja) 2010-08-19
JP2010182555A5 true JP2010182555A5 (enExample) 2012-04-05
JP5670619B2 JP5670619B2 (ja) 2015-02-18

Family

ID=42763980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009025645A Active JP5670619B2 (ja) 2009-02-06 2009-02-06 極端紫外光源装置

Country Status (1)

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JP (1) JP5670619B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2009117A (en) * 2011-08-05 2013-02-06 Asml Netherlands Bv Radiation source and method for lithographic apparatus and device manufacturing method.
JP5946649B2 (ja) 2012-02-14 2016-07-06 ギガフォトン株式会社 ターゲット供給装置
WO2016072025A1 (ja) * 2014-11-07 2016-05-12 ギガフォトン株式会社 加振ユニット、ターゲット供給装置および極端紫外光生成装置
WO2016084167A1 (ja) 2014-11-26 2016-06-02 ギガフォトン株式会社 加振ユニット、ターゲット供給装置および極端紫外光生成システム
JP5852216B2 (ja) * 2014-12-04 2016-02-03 ギガフォトン株式会社 極端紫外光源装置及びチャンバ装置
WO2018069976A1 (ja) 2016-10-11 2018-04-19 ギガフォトン株式会社 ターゲット供給装置
CN107121318B (zh) * 2017-04-27 2020-07-07 河北工业大学 一种基于铌酸锂夹层结构芯片的实时可控微液滴阵列化装置及方法
WO2019167234A1 (ja) * 2018-03-01 2019-09-06 ギガフォトン株式会社 ターゲット供給装置、極端紫外光生成装置及び電子デバイスの製造方法
US11150559B2 (en) 2019-12-30 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Laser interference fringe control for higher EUV light source and EUV throughput

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2799667B1 (fr) * 1999-10-18 2002-03-08 Commissariat Energie Atomique Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
US7405416B2 (en) * 2005-02-25 2008-07-29 Cymer, Inc. Method and apparatus for EUV plasma source target delivery
JP2005346962A (ja) * 2004-05-31 2005-12-15 Kansai Tlo Kk 硬ｘ線発生方法および装置
JP2006210157A (ja) * 2005-01-28 2006-08-10 Ushio Inc レーザ生成プラズマ方式極端紫外光光源
JP5215540B2 (ja) * 2006-07-18 2013-06-19 ギガフォトン株式会社 ターゲット物質供給装置
JP5149520B2 (ja) * 2007-03-08 2013-02-20 ギガフォトン株式会社 極端紫外光源装置

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