JP5670619B2 - 極端紫外光源装置 - Google Patents
極端紫外光源装置 Download PDFInfo
- Publication number
- JP5670619B2 JP5670619B2 JP2009025645A JP2009025645A JP5670619B2 JP 5670619 B2 JP5670619 B2 JP 5670619B2 JP 2009025645 A JP2009025645 A JP 2009025645A JP 2009025645 A JP2009025645 A JP 2009025645A JP 5670619 B2 JP5670619 B2 JP 5670619B2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- source device
- extreme ultraviolet
- nozzle portion
- ultraviolet light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013077 target material Substances 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 41
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 239000011148 porous material Substances 0.000 description 18
- 239000011810 insulating material Substances 0.000 description 14
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 7
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- -1 langasite Chemical compound 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910000154 gallium phosphate Inorganic materials 0.000 description 2
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009025645A JP5670619B2 (ja) | 2009-02-06 | 2009-02-06 | 極端紫外光源装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009025645A JP5670619B2 (ja) | 2009-02-06 | 2009-02-06 | 極端紫外光源装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014255747A Division JP5955372B2 (ja) | 2014-12-18 | 2014-12-18 | 極端紫外光源装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010182555A JP2010182555A (ja) | 2010-08-19 |
| JP2010182555A5 JP2010182555A5 (enExample) | 2012-04-05 |
| JP5670619B2 true JP5670619B2 (ja) | 2015-02-18 |
Family
ID=42763980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009025645A Active JP5670619B2 (ja) | 2009-02-06 | 2009-02-06 | 極端紫外光源装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5670619B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2009117A (en) * | 2011-08-05 | 2013-02-06 | Asml Netherlands Bv | Radiation source and method for lithographic apparatus and device manufacturing method. |
| JP5946649B2 (ja) * | 2012-02-14 | 2016-07-06 | ギガフォトン株式会社 | ターゲット供給装置 |
| WO2016072025A1 (ja) * | 2014-11-07 | 2016-05-12 | ギガフォトン株式会社 | 加振ユニット、ターゲット供給装置および極端紫外光生成装置 |
| JP6480466B2 (ja) | 2014-11-26 | 2019-03-13 | ギガフォトン株式会社 | 加振ユニット及びターゲット供給装置 |
| JP5852216B2 (ja) * | 2014-12-04 | 2016-02-03 | ギガフォトン株式会社 | 極端紫外光源装置及びチャンバ装置 |
| WO2018069976A1 (ja) | 2016-10-11 | 2018-04-19 | ギガフォトン株式会社 | ターゲット供給装置 |
| CN107121318B (zh) * | 2017-04-27 | 2020-07-07 | 河北工业大学 | 一种基于铌酸锂夹层结构芯片的实时可控微液滴阵列化装置及方法 |
| WO2019167234A1 (ja) | 2018-03-01 | 2019-09-06 | ギガフォトン株式会社 | ターゲット供給装置、極端紫外光生成装置及び電子デバイスの製造方法 |
| US11150559B2 (en) * | 2019-12-30 | 2021-10-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Laser interference fringe control for higher EUV light source and EUV throughput |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2799667B1 (fr) * | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
| US7405416B2 (en) * | 2005-02-25 | 2008-07-29 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery |
| JP2005346962A (ja) * | 2004-05-31 | 2005-12-15 | Kansai Tlo Kk | 硬ｘ線発生方法および装置 |
| JP2006210157A (ja) * | 2005-01-28 | 2006-08-10 | Ushio Inc | レーザ生成プラズマ方式極端紫外光光源 |
| JP5215540B2 (ja) * | 2006-07-18 | 2013-06-19 | ギガフォトン株式会社 | ターゲット物質供給装置 |
| JP5149520B2 (ja) * | 2007-03-08 | 2013-02-20 | ギガフォトン株式会社 | 極端紫外光源装置 |
-
2009
- 2009-02-06 JP JP2009025645A patent/JP5670619B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010182555A (ja) | 2010-08-19 |
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