WO2011027717A1 - Lpp方式のeuv光源とその発生方法 - Google Patents
Lpp方式のeuv光源とその発生方法 Download PDFInfo
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- WO2011027717A1 WO2011027717A1 PCT/JP2010/064557 JP2010064557W WO2011027717A1 WO 2011027717 A1 WO2011027717 A1 WO 2011027717A1 JP 2010064557 W JP2010064557 W JP 2010064557W WO 2011027717 A1 WO2011027717 A1 WO 2011027717A1
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- hypersonic
- gas jet
- target material
- laser
- vacuum chamber
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- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000013077 target material Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000013076 target substance Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Definitions
- the present invention relates to an LPP type EUV light source and a generation method thereof.
- Lithography using an extreme ultraviolet light source is expected for microfabrication of next-generation semiconductors.
- Lithography is a technique for forming an electronic circuit by exposing a resist material to light and a beam by reducing and projecting them onto a silicon substrate through a mask on which a circuit pattern is drawn.
- the minimum processing dimension of a circuit formed by photolithography basically depends on the wavelength of the light source. Therefore, it is essential to shorten the wavelength of the light source for next-generation semiconductor development, and research for this light source development is underway.
- EUV extreme ultra violet
- the most promising next generation lithography light source is an extreme ultra violet (EUV) light source, which means light in the wavelength region of about 1 to 100 nm.
- the light in this region has a high absorptance with respect to all substances, and a transmissive optical system such as a lens cannot be used. Therefore, a reflective optical system is used.
- the optical system in the extreme ultraviolet region is very difficult to develop, and exhibits a reflection characteristic only at a limited wavelength.
- Light source plasma generation can be broadly classified into light source plasma generation (LPP: Laser Produced Plasma) by a laser irradiation method and light source plasma generation (DPP: Discharge Produced Plasma) by a gas discharge method driven by a pulse power technique.
- LPP Laser Produced Plasma
- DPP Discharge Produced Plasma
- the present invention relates to an LPP type EUV light source.
- the LPP EUV light source is disclosed in, for example, Patent Documents 1 and 2.
- FIG. 1 is a configuration diagram of a conventional LPP EUV light source disclosed in Patent Document 1.
- at least one target 57 is generated in the chamber, and at least one pulsed laser beam 53 is focused on the target 57 in the chamber.
- the target is generated in the form of a liquid jet, and the laser beam 53 is focused on a spatially continuous portion of the jet.
- the apparatus also includes means for generating at least one laser beam 53, a chamber, means 50 for generating at least one target 57 in the chamber, and collecting the laser beam 53 on the target 57 in the chamber.
- Means 54 for light The target generating unit 50 generates a liquid jet, and the condensing unit 54 condenses the laser beam 53 on a spatially continuous portion of the jet.
- 51 is a condensing point
- 52 is a droplet
- 55 is a droplet forming point.
- FIG. 2 is a configuration diagram of a conventional LPP EUV light source disclosed in Patent Document 2.
- This apparatus includes a laser oscillation unit 61, a condensing optical system 62 such as a condensing lens, a target supply device 63, a target nozzle 64, and an EUV condensing mirror 65.
- the laser oscillation unit 61 is a laser light source that pulsates a laser beam for exciting the target material.
- the laser beam emitted from the laser oscillator 61 is condensed at a predetermined position by the condenser lens 62.
- the target supply device 63 supplies the target material to the target nozzle 64, and the target nozzle 64 injects the supplied target material to a predetermined position.
- the target material When the target material is irradiated with a laser beam, the target material is excited to generate plasma 66, from which extreme ultraviolet light 67 (EUV) light is emitted.
- EUV extreme ultraviolet light
- a film Mo / Si multilayer film in which molybdenum and silicon are alternately laminated is formed in order to selectively reflect EUV light having a wavelength of around 13.5 nm. ing.
- the EUV light 67 radiated from the plasma 66 is collected and reflected by the EUV collector mirror 65, and is output to the exposure apparatus or the like as output EUV light.
- JP 2000-509190 A “Method and apparatus for generating X-ray radiation or extreme ultraviolet radiation” Japanese Patent Application Laid-Open No. 2007-207574, “Extreme Ultraviolet Light Source Device”
- the above-described conventional LPP EUV light source uses a high-power pulse laser (for example, 0.1 J / Pulse) as a laser light source, and irradiates the target material at a high repetition rate (for example, 100 kHz) to achieve a practical output (for example, 100 J / pulse).
- a high-power pulse laser for example, 0.1 J / Pulse
- a high repetition rate for example, 100 kHz
- a practical output for example, 100 J / pulse
- an object of the present invention is to provide an LPP-type EUV light source and a method for generating the same that can greatly increase the efficiency of utilization of the target material and energy, and can suppress the generation of debris and the deterioration of the vacuum degree of the chamber. There is to do.
- a vacuum chamber maintained in a vacuum environment;
- a gas jet device for recovering and circulating a hypersonic steady gas jet of the target material in the vacuum chamber;
- a laser device for condensing and irradiating laser light on the hypersonic stationary gas jet,
- an LPP EUV light source characterized by exciting a target material at a condensing point of the laser light to generate plasma and emitting extreme ultraviolet light therefrom.
- the gas jet device includes a hypersonic nozzle and a hypersonic diffuser disposed opposite to each other with the condensing point in the vacuum chamber, and the hypersonic steady gas jet. And a gas recirculation device that circulates and circulates from the hypersonic nozzle and collects it from the hypersonic diffuser.
- the gas jet device steadily forms a high-density target material region suitable for absorption of laser light and emission of EUV light without increasing the back pressure of the vacuum chamber.
- the inside of the vacuum chamber is maintained in a vacuum environment
- a hypersonic steady gas jet of the target material is collected and circulated in the vacuum chamber, Condensing and irradiating laser light to the hypersonic stationary gas jet,
- an LPP EUV light generation method characterized in that a target material is excited at a condensing point of the laser light to generate plasma, and extreme ultraviolet light is emitted therefrom.
- the target material can be recovered and circulated as compared with the conventional example in which the plasma and target material generated every shot are exhausted, so that the utilization efficiency of the target material is greatly increased.
- the energy utilization efficiency can be greatly increased. Thereby, generation
- FIG. 1 It is a block diagram of the conventional LPP system EUV light source disclosed by patent document 1.
- FIG. 2 It is a block diagram of the conventional LPP system EUV light source disclosed by patent document 2.
- FIG. 2 It is a block diagram of the LPP type EUV light source by this invention. It is the elements on larger scale of the plasma light source of FIG.
- FIG. 3 is a configuration diagram of an LPP EUV light source according to the present invention.
- the LPP EUV light source 10 of the present invention includes a vacuum chamber 12, a gas jet device 14, and a laser device 16.
- the vacuum chamber 12 includes a vacuum pump 13, thereby maintaining the inside in a vacuum environment.
- the vacuum chamber 12 is provided with an optical window 12a through which laser light 3 (described later) is transmitted.
- the vacuum environment needs to be 10 ⁇ 2 Torr or less, and preferably in the range of 10 ⁇ 5 to 10 ⁇ 4 Torr.
- the gas jet device 14 continuously forms and recovers the hypersonic steady gas jet 1 of the target material in the vacuum chamber 12.
- the target material is preferably a gas or cluster such as Xe (xenon), Sn (tin), Li (lithium).
- the constituent material of the gas jet does not need to be a normal temperature gaseous material, and a metal gas jet can be formed by raising the temperature of the gas supply unit.
- the gas jet is formed by a hypersonic nozzle, but the recovery side does not need to be a hypersonic diffuser and can be recovered as a liquid metal by a temperature-controlled recovery plate or the like.
- the metal atoms may not be completely dissociated in the laser irradiation region, but may be a cluster jet in which a plurality of atoms are aggregated.
- the gas jet device 14 includes a hypersonic nozzle 14a, a hypersonic diffuser 14b, and a gas recirculation device 15.
- the hypersonic nozzle 14a and the hypersonic diffuser 14b are disposed to face the vacuum chamber 12 with the condensing point 2 interposed therebetween.
- the end of the hypersonic nozzle 14a (upper end in the figure) and the tip of the hypersonic diffuser 14b (lower end in the figure) are spaced apart from each other by a predetermined gap. This gap communicates with the vacuum environment in the vacuum chamber 12.
- the hypersonic nozzle 14a is a Laval nozzle having a throat portion, and accelerates the gas (target material) flowing in at subsonic speed to the hypersonic speed and injects it toward the condensing point 2.
- the hypersonic diffuser 14b has a Laval nozzle shape having a throat portion, and accepts most of the hypersonic gas (target material) that has passed through the condensing point 2 and decelerates it to subsonic speed. It has become.
- the gas recirculation device 15 includes a suction pump 15a, a target chamber 15b, and a discharge pump 15c.
- the gas recirculation device 15 supplies the target material to the hypersonic nozzle 14a through the supply line 17a at the subsonic speed, and the hypersonic steady gas jet 1 of the target material is hypersonic (M) from the hypersonic nozzle 14a. > 5) and the target material is recovered at hypersonic speed (M> 5) from the hypersonic diffuser 14b, decelerated to subsonic speed and returned to the suction pump 15a via the return line 17b. Material is recycled.
- the target material is supplied to the target chamber 15b from the outside.
- the gas jet device 14 does not increase the back pressure of the vacuum chamber 12 and steadily forms a high-density target material region suitable for absorption of the laser light 3 and emission of the EUV light 4 at the focal point 2. As such, it is designed gasdynamically.
- the hypersonic and hypersonic steady gas jet 1 means a hypersonic flow of M> 5. In the present invention, as long as the above requirement is satisfied, M> 1. Good.
- a target heating device 18 between the hypersonic nozzle 14a and the gas recirculation device 15 in order to heat the target material.
- the target heating device 18 heats the temperature of the target material to a temperature suitable for forming the hypersonic diffuser 14b. This heating means is optional.
- the laser device 16 includes a laser oscillator 16a that oscillates the laser beam 3 continuously or in pulses, and a condensing lens 16b that condenses the laser beam 3 at a condensing point 2, and the hypersonic steady gas jet 1.
- the laser beam 3 is condensed and irradiated.
- the optical path of the laser beam 3 is orthogonal to the flow path of the hypersonic steady gas jet 1, but the present invention is not limited to this, and may cross obliquely.
- the laser device 16 and the laser beam 3 are not limited to one each, and two or more may be used.
- a CO 2 laser (wavelength of about 10 ⁇ m), a CO laser (wavelength of about 5 ⁇ m), a YAG laser (wavelength of about 1 ⁇ m and about 0.5 ⁇ m), or the like can be used.
- a YAG laser or a CO laser it is preferable to use a YAG laser or a CO laser, but the present invention is not limited to a YAG laser or a CO laser, and may be a CO 2 laser.
- the condensing lens 16b may be a convex lens system capable of condensing the diameter of the condensing point 2 to about 10 ⁇ m or less, more preferably about 5 ⁇ m or less.
- FIG. 4 is a partially enlarged view of the plasma light source of FIG.
- the optimum temperature condition for this plasmaization temperature is about 30 eV for xenon gas and about 10 eV for lithium gas.
- the total radiation amount of the luminescent plasma that emits extreme ultraviolet light 4 when converted into plasma is the maximum in the case of a blackbody radiator, and when the plasma size (that is, the diameter of the condensing point 2) is 10 ⁇ m, The amount of radiation reaches about 150 kW, and the amount of radiation from 10 eV lithium gas is about 1/80 (about 1.9 kW).
- the actual light-emitting plasma is not a black body, and the total amount of radiation from the EUV light-emitting plasma is lower than this. From the viewpoint of adjusting the energy balance, it is desirable that the minimum focused diameter of the laser can supply energy corresponding to the total plasma radiation amount from the laser oscillator 16a to the focused point 2.
- the diameter of the condensing point 2 that can be condensed by the condensing lens 16b substantially corresponds to the wavelength of the laser beam, about 10 ⁇ m for the CO 2 laser, about 5 ⁇ m for the CO laser, and about 1 ⁇ m for the YAG laser. Or about 0.5 micrometer.
- the diameter of the condensing point 2 is preferably as small as possible. From this viewpoint, it is preferable to use a YAG laser or a CO laser.
- the amount of radiation from 30 eV xenon gas is about 9.4 kW (1/4 2 in the case of 150 kW).
- the radiation amount from 10 eV lithium gas is about 470 W (150 kW ⁇ 1/80 ⁇ 1/2 2 ).
- the heat input of the light-emitting plasma from the laser is energy received from the laser oscillator 16a while the hypersonic steady gas jet 1 passes through the plasma size (that is, the diameter of the condensing point 2). And the output of the laser oscillator 16a are not affected by the diameter of the focal point 2.
- the laser oscillator 16a having a relatively small output (for example, 1 to 10 kW) has an output.
- the target material is excited at the condensing point 2 to generate plasma, and the extreme ultraviolet light 4 can be emitted therefrom.
- the hypersonic steady gas jet 1 of the target material is retrievably formed in the vacuum chamber 12 by the gas jet device 14, and the hypersonic velocity is obtained by the laser device 16.
- the stationary gas jet 1 is condensed and irradiated with the laser beam 3, the target material is excited at the laser beam condensing point 2 to generate plasma, and the extreme ultraviolet light 4 can be emitted therefrom.
- the target material can be recovered and recycled, so that the utilization efficiency of the target material is greatly increased and the energy utilization efficiency is greatly increased. Can be increased. Thereby, generation
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Abstract
Description
本発明は、LPP方式のEUV光源に関する。LPP方式EUV光源は、例えば、特許文献1,2に開示されている。
またこの装置は、少なくとも1つのレーザービーム53を発生するための手段と、チャンバーと、少なくとも1つのターゲット57をチャンバー内で発生するための手段50と、レーザービーム53をチャンバー内でターゲット57に集光させるための手段54とを含む。ターゲット発生手段50は、液体の噴流を発生し、集光手段54は、レーザービーム53を噴流の空間的に連続した部分に集光させるようになっている。
なお、この図で、51は集光点、52は液滴、55は液滴形成点である。
この装置は、レーザー発振部61と、集光レンズ等の集光光学系62と、ターゲット供給装置63と、ターゲットノズル64と、EUV集光ミラー65とを含んでいる。レーザー発振部61は、ターゲット物質を励起させるためのレーザービームをパルス発振するレーザー光源である。レーザー発振部61から射出したレーザービームは、集光レンズ62によって所定の位置に集光される。一方、ターゲット供給装置63は、ターゲット物質をターゲットノズル64に供給し、ターゲットノズル64は、供給されたターゲット物質を所定の位置に噴射する。
また、実用出力を目指す、高繰り返し運転化(10~100kHz)においては、発光源物質(すなわちターゲット物質)の廃棄は、デブリ発生、チャンバーの真空度悪化などの大きな問題を引き起こしていた。
該真空チャンバー内にターゲット物質の極超音速定常ガスジェットを回収し循環可能に形成するガスジェット装置と、
前記極超音速定常ガスジェットにレーザー光を集光して照射するレーザー装置と、を備え、
前記レーザー光の集光点においてターゲット物質を励起してプラズマを発生させ、そこから極端紫外光を発光させる、ことを特徴とするLPP方式EUV光源が提供される。
該真空チャンバー内にターゲット物質の極超音速定常ガスジェットを回収し循環可能に形成し、
前記極超音速定常ガスジェットにレーザー光を集光して照射し、
前記レーザー光の集光点においてターゲット物質を励起してプラズマを発生させ、そこから極端紫外光を発光させる、ことを特徴とするLPP方式EUV光発生方法が提供される。
なお、本発明において、上記真空環境は10-2Torr以下である必要があり、10-5~10-4Torrの範囲内であることが好ましい。
ターゲット物質は、Xe(キセノン),Sn(スズ),Li(リチウム)等のガスもしくはクラスターであることが好ましい。
また、ガスジェットの構成物質は常温気体物質である必要はなく、ガス供給部を高温にすることにより、金属ガスジェットを形成する事も可能である。この場合、ガスジェット形成は極超音速ノズルによりなされるが、回収側は極超音速ディフーザーである必要は無く、温度制御された回収プレート等により液体金属として回収する事も可能である。さらに、金属ガスジェットの場合、レーザー照射領域において金属原子が完全にバラバラのガス状でなく、複数原子が凝集したクラスタージェットとなる事もある。
極超音速ノズル14aの末端(図で上端)と極超音速ディフューザー14bの先端(図で下端)とは、集光点2を挟んで所定の隙間を隔てている。この隙間は、真空チャンバー12内の真空環境に連通している。
ガス再循環装置15は、ターゲット物質を供給ライン17aを介して極超音速ノズル14aまで亜音速で供給し、極超音速ノズル14aからターゲット物質の極超音速定常ガスジェット1を極超音速(M>5)で噴射し、かつ極超音速ディフューザー14bからターゲット物質を極超音速(M>5)で回収し、亜音速まで減速して戻りライン17bを介して吸引ポンプ15aまで戻すことにより、ターゲット物質を循環使用するようになっている。なお、ターゲットチャンバー15bには、ターゲット物質が外部から補給される。
なお、一般的に、極超音速及び極超音速定常ガスジェット1とは、M>5の極超音速流を意味するが、本発明では、上記要件を満たす限りで、M>1であればよい。
この例において、レーザー光3の光路は、極超音速定常ガスジェット1の流路に直交しているが、本発明はこれに限定されず、斜めに交差してもよい。また、レーザー装置16及びレーザー光3は、それぞれ1つずつに限定されず、2以上を用いてもよい。
(A) 真空チャンバー12内を所定の真空環境に保持し、
(B) 真空チャンバー12内にターゲット物質の極超音速定常ガスジェット1を回収可能に形成し、
(C) 極超音速定常ガスジェット1にレーザー光3を集光して照射して、レーザー光の集光点2においてターゲット物質を励起してプラズマを発生させ、そこから極端紫外光4を発光させる。
ターゲット物質をプラズマ化して極端紫外光4を発光させるには、集光点2においてターゲット物質がプラズマ化する温度まで加熱する必要がある。このプラズマ化温度の最適温度条件は、キセノンガスの場合は約30eVであり、リチウムガスの場合は約10eVである。
プラズマ化して極端紫外光4を発光する発光プラズマの総輻射量は、黒体輻射体の場合最大であり、プラズマサイズ(すなわち集光点2の直径)が10μmの場合、30eVのキセノンガスからの輻射量は約150kWに達し、10eVのリチウムガスからの輻射量はその1/80程度(約1.9kW)となる。実際の発光プラズマは黒体ではなく、EUV発光プラズマからの総輻射量はこれより低くなる。エネルギーバランス調整の観点から、レーザーの最小集光径は、プラズマ総輻射量に相当するエネルギーを、レーザー発振器16aから集光点2に供給できる事が望ましい。
上述した輻射量に相当するエネルギーを集光点2に集光させるために、集光点2の直径は、小さいほど好ましく、その観点から、YAGレーザー又はCOレーザーを用いるのが好ましい。
2 集光点、3 レーザー光、
10 LPP方式EUV光源、12 真空チャンバー、
12a 光学窓、13 真空ポンプ、
14 ガスジェット装置、
14a 極超音速ノズル、14b 極超音速ディフューザー、
15 ガス再循環装置、15a 吸引ポンプ、
15b ターゲットチャンバー、15c 吐出ポンプ、
16 レーザー装置、
16a レーザー発振器、16b 集光レンズ、
17a 供給ライン、17b 戻りライン、
18 ターゲット加熱装置
Claims (4)
- 真空環境に保持された真空チャンバーと、
該真空チャンバー内にターゲット物質の極超音速定常ガスジェットを回収し循環使用可能に形成するガスジェット装置と、
前記極超音速定常ガスジェットにレーザー光を集光して照射するレーザー装置と、を備え、
前記レーザー光の集光点においてターゲット物質を励起してプラズマを発生させ、そこから極端紫外光を発光させる、ことを特徴とするLPP方式EUV光源。 - 前記ガスジェット装置は、前記真空チャンバー内に前記集光点を挟んで対向配置された極超音速ノズル及び極超音速ディフューザーと、前記極超音速定常ガスジェットを極超音速ノズルから噴射しかつ極超音速ディフューザーから回収して循環させるガス再循環装置とからなる、ことを特徴とする請求項1に記載のLPP方式EUV光源。
- 前記ガスジェット装置は、前記真空チャンバーのバックプレッシャーを高めず、かつレーザー光の吸収とEUV光の放出に適した高密度のターゲット物質領域を定常的に形成する、ことを特徴とする請求項1又は2に記載のLPP方式EUV光源。
- 真空チャンバー内を真空環境に保持し、
該真空チャンバー内にターゲット物質の極超音速定常ガスジェットを回収し循環可能に形成し、
前記極超音速定常ガスジェットにレーザー光を集光して照射し、
前記レーザー光の集光点においてターゲット物質を励起してプラズマを発生させ、そこから極端紫外光を発光させる、ことを特徴とするLPP方式EUV光発生方法。
Priority Applications (4)
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US13/388,165 US9000402B2 (en) | 2009-09-01 | 2010-08-27 | LPP EUV light source and method for producing the same |
KR1020127004073A KR101357231B1 (ko) | 2009-09-01 | 2010-08-27 | Lpp 방식의 euv 광원과 그 발생 방법 |
EP10813666.4A EP2475228A4 (en) | 2009-09-01 | 2010-08-27 | EUV LPP LIGHT SOURCE AND METHOD FOR MANUFACTURING SAME |
CN2010800388996A CN102484937A (zh) | 2009-09-01 | 2010-08-27 | Lpp方式的euv光源及其产生方法 |
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JP2009201433A JP2011054376A (ja) | 2009-09-01 | 2009-09-01 | Lpp方式のeuv光源とその発生方法 |
JP2009-201433 | 2009-09-01 |
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US (1) | US9000402B2 (ja) |
EP (1) | EP2475228A4 (ja) |
JP (1) | JP2011054376A (ja) |
KR (1) | KR101357231B1 (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103858176A (zh) * | 2011-10-06 | 2014-06-11 | 浜松光子学株式会社 | 放射线产生装置以及放射线产生方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2976440B1 (fr) * | 2011-06-09 | 2014-01-17 | Ecole Polytech | Procede et agencement pour engendrer un jet de fluide, procede et systeme de transformation du jet en un plasma et applications de ce systeme |
DE102012103777A1 (de) * | 2012-05-22 | 2013-11-28 | Reinhausen Plasma Gmbh | Verfahren und vorrichtung zur beständigkeitsprüfung eines werkstoffs |
DE102012217120A1 (de) * | 2012-09-24 | 2014-03-27 | Trumpf Laser- Und Systemtechnik Gmbh | EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür |
WO2014072149A2 (en) * | 2012-11-07 | 2014-05-15 | Asml Netherlands B.V. | Method and apparatus for generating radiation |
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CN103079327B (zh) * | 2013-01-05 | 2015-09-09 | 中国科学院微电子研究所 | 一种靶源预整形增强的极紫外光发生装置 |
DE102014006265B4 (de) * | 2013-05-03 | 2017-08-24 | Media Lario S.R.L. | Sn-dampf-euv-llp-quellsystem für die euv-lithographie |
US9585236B2 (en) * | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
DE102014006063A1 (de) * | 2014-04-25 | 2015-10-29 | Microliquids GmbH | Strahlerzeugungsvorrichtung und Verfahren zur Erzeugung eines Flüssigkeitsstrahls |
US9301381B1 (en) | 2014-09-12 | 2016-03-29 | International Business Machines Corporation | Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas |
CN104914680B (zh) * | 2015-05-25 | 2017-03-08 | 中国科学院上海光学精密机械研究所 | 基于溶胶射流靶的lpp‑euv光源系统 |
US10887974B2 (en) * | 2015-06-22 | 2021-01-05 | Kla Corporation | High efficiency laser-sustained plasma light source |
WO2017187571A1 (ja) * | 2016-04-27 | 2017-11-02 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
KR102529565B1 (ko) * | 2018-02-01 | 2023-05-04 | 삼성전자주식회사 | 극자외선 생성 장치 |
KR102447685B1 (ko) * | 2020-07-22 | 2022-09-27 | 포항공과대학교 산학협력단 | 특정 파장대의 광원을 발생시키기 위한 장치 및 방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000509190A (ja) | 1996-04-25 | 2000-07-18 | ジェテック、アクチボラグ | X線放射線または極紫外線放射線を発生するための方法および装置 |
JP2001511311A (ja) * | 1997-02-04 | 2001-08-07 | アドヴァンスド、エナジ、システィムズ、インク | フォトリソグラフィに使用するための極紫外線を生成するための方法と装置 |
JP2002544675A (ja) * | 1999-05-06 | 2002-12-24 | アドヴァンスド、エナジー、システィムズ、インク | 半導体製造工程用のリソグラフィ光源を提供するためのシステムおよび方法 |
JP2005032510A (ja) * | 2003-07-10 | 2005-02-03 | Nikon Corp | Euv光源、露光装置及び露光方法 |
JP2006294606A (ja) * | 2005-04-12 | 2006-10-26 | Xtreme Technologies Gmbh | プラズマ放射線源 |
JP2007207574A (ja) | 2006-02-01 | 2007-08-16 | Komatsu Ltd | 極端紫外光源装置 |
JP2007317598A (ja) * | 2006-05-29 | 2007-12-06 | Komatsu Ltd | 極端紫外光源装置 |
JP2008300351A (ja) * | 2007-05-16 | 2008-12-11 | Xtreme Technologies Gmbh | プラズマベースのeuv放射線源用のガスカーテンを生成する装置 |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62176038A (ja) | 1986-01-28 | 1987-08-01 | Hitachi Ltd | X線発光装置 |
US4817892A (en) * | 1986-04-28 | 1989-04-04 | Janeke Charl E | Aerospace plane and engine therefor |
US4778130A (en) * | 1986-05-08 | 1988-10-18 | Kyusik Kim | Ultra hypersonic aircraft |
US4934632A (en) * | 1987-12-03 | 1990-06-19 | Kyusik Kim | Aerothermal ultra hypersonic aircraft |
JPH01243349A (ja) | 1988-03-25 | 1989-09-28 | Hitachi Ltd | プラズマ極端紫外光発生装置 |
US5963616A (en) | 1997-03-11 | 1999-10-05 | University Of Central Florida | Configurations, materials and wavelengths for EUV lithium plasma discharge lamps |
US6232613B1 (en) * | 1997-03-11 | 2001-05-15 | University Of Central Florida | Debris blocker/collector and emission enhancer for discharge sources |
US6541786B1 (en) * | 1997-05-12 | 2003-04-01 | Cymer, Inc. | Plasma pinch high energy with debris collector |
US6566667B1 (en) | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US5763930A (en) * | 1997-05-12 | 1998-06-09 | Cymer, Inc. | Plasma focus high energy photon source |
US6014252A (en) * | 1998-02-20 | 2000-01-11 | The Regents Of The University Of California | Reflective optical imaging system |
US6180952B1 (en) * | 1998-04-03 | 2001-01-30 | Advanced Energy Systems, Inc. | Holder assembly system and method in an emitted energy system for photolithography |
US6194733B1 (en) * | 1998-04-03 | 2001-02-27 | Advanced Energy Systems, Inc. | Method and apparatus for adjustably supporting a light source for use in photolithography |
US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
JP4332648B2 (ja) | 1999-04-07 | 2009-09-16 | レーザーテック株式会社 | 光源装置 |
JP2001108799A (ja) * | 1999-10-08 | 2001-04-20 | Nikon Corp | X線発生装置、x線露光装置及び半導体デバイスの製造方法 |
TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
US6469310B1 (en) * | 1999-12-17 | 2002-10-22 | Asml Netherlands B.V. | Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus |
ATE489838T1 (de) * | 2000-07-28 | 2010-12-15 | Jettec Ab | Verfahren und vorrichtung zur erzeugung von röntgenstrahlung |
US6711233B2 (en) * | 2000-07-28 | 2004-03-23 | Jettec Ab | Method and apparatus for generating X-ray or EUV radiation |
GB0111204D0 (en) * | 2001-05-08 | 2001-06-27 | Mertek Ltd | High flux,high energy photon source |
JP4995379B2 (ja) * | 2001-06-18 | 2012-08-08 | ギガフォトン株式会社 | 光源装置及びそれを用いた露光装置 |
US6998785B1 (en) * | 2001-07-13 | 2006-02-14 | University Of Central Florida Research Foundation, Inc. | Liquid-jet/liquid droplet initiated plasma discharge for generating useful plasma radiation |
JP5098126B2 (ja) * | 2001-08-07 | 2012-12-12 | 株式会社ニコン | X線発生装置、露光装置、露光方法及びデバイス製造方法 |
US6714624B2 (en) * | 2001-09-18 | 2004-03-30 | Euv Llc | Discharge source with gas curtain for protecting optics from particles |
JP3791441B2 (ja) | 2002-03-27 | 2006-06-28 | ウシオ電機株式会社 | 極端紫外光発生装置 |
JP3759066B2 (ja) * | 2002-04-11 | 2006-03-22 | 孝晏 望月 | レーザプラズマ発生方法およびその装置 |
JP2006501660A (ja) | 2002-09-30 | 2006-01-12 | カール・ツァイス・エスエムティー・アーゲー | 照明の同定用のセンサを備える波長≦193nm用の照明システム |
JP2004226244A (ja) | 2003-01-23 | 2004-08-12 | Ushio Inc | 極端紫外光源および半導体露光装置 |
DE10305701B4 (de) | 2003-02-07 | 2005-10-06 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung von EUV-Strahlung mit hohen Repetitionsraten |
DE10337667B4 (de) * | 2003-08-12 | 2012-03-22 | Xtreme Technologies Gmbh | Plasma-Strahlungsquelle und Anordnung zur Erzeugung eines Gasvorhangs für Plasma-Strahlungsquellen |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
TW200613706A (en) | 2004-09-29 | 2006-05-01 | Ushio Electric Inc | EUV generator |
DE102005020521B4 (de) * | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
WO2006120942A1 (ja) | 2005-05-06 | 2006-11-16 | Tokyo Institute Of Technology | プラズマ発生装置及びプラズマ発生方法 |
JP4667140B2 (ja) * | 2005-06-30 | 2011-04-06 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US7598508B2 (en) * | 2005-07-13 | 2009-10-06 | Nikon Corporation | Gaseous extreme-ultraviolet spectral purity filters and optical systems comprising same |
DE102005041567B4 (de) * | 2005-08-30 | 2009-03-05 | Xtreme Technologies Gmbh | EUV-Strahlungsquelle mit hoher Strahlungsleistung auf Basis einer Gasentladung |
DE102005048670B3 (de) * | 2005-10-07 | 2007-05-24 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
DE102006003683B3 (de) | 2006-01-24 | 2007-09-13 | Xtreme Technologies Gmbh | Anordnung und Verfahren zur Erzeugung von EUV-Strahlung hoher Durchschnittsleistung |
JP4954584B2 (ja) * | 2006-03-31 | 2012-06-20 | 株式会社小松製作所 | 極端紫外光源装置 |
JP4884152B2 (ja) | 2006-09-27 | 2012-02-29 | 株式会社小松製作所 | 極端紫外光源装置 |
US20080237498A1 (en) * | 2007-01-29 | 2008-10-02 | Macfarlane Joseph J | High-efficiency, low-debris short-wavelength light sources |
JP2008270149A (ja) | 2007-03-28 | 2008-11-06 | Tokyo Institute Of Technology | 極端紫外光光源装置および極端紫外光発生方法 |
US7737420B2 (en) * | 2007-03-30 | 2010-06-15 | Intel Corporation | Pixelated modulation of illumination pupil image |
US7691755B2 (en) | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
WO2008154222A1 (en) | 2007-06-06 | 2008-12-18 | Mks Instruments, Inc. | Particle reduction through gas and plasma source control |
US7709816B2 (en) | 2007-08-16 | 2010-05-04 | Sematech, Inc. | Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) light sources used in semiconductor fabrication |
JP5458243B2 (ja) * | 2007-10-25 | 2014-04-02 | 国立大学法人大阪大学 | Euv光の放射方法、および前記euv光を用いた感応基板の露光方法 |
US20090218521A1 (en) * | 2008-02-08 | 2009-09-03 | Nikon Corporation | Gaseous neutral density filters and related methods |
-
2009
- 2009-09-01 JP JP2009201433A patent/JP2011054376A/ja active Pending
-
2010
- 2010-08-27 KR KR1020127004073A patent/KR101357231B1/ko not_active IP Right Cessation
- 2010-08-27 EP EP10813666.4A patent/EP2475228A4/en not_active Withdrawn
- 2010-08-27 WO PCT/JP2010/064557 patent/WO2011027717A1/ja active Application Filing
- 2010-08-27 US US13/388,165 patent/US9000402B2/en not_active Expired - Fee Related
- 2010-08-27 CN CN2010800388996A patent/CN102484937A/zh active Pending
- 2010-08-31 TW TW99129224A patent/TWI422286B/zh not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000509190A (ja) | 1996-04-25 | 2000-07-18 | ジェテック、アクチボラグ | X線放射線または極紫外線放射線を発生するための方法および装置 |
JP2001511311A (ja) * | 1997-02-04 | 2001-08-07 | アドヴァンスド、エナジ、システィムズ、インク | フォトリソグラフィに使用するための極紫外線を生成するための方法と装置 |
JP2002544675A (ja) * | 1999-05-06 | 2002-12-24 | アドヴァンスド、エナジー、システィムズ、インク | 半導体製造工程用のリソグラフィ光源を提供するためのシステムおよび方法 |
JP2005032510A (ja) * | 2003-07-10 | 2005-02-03 | Nikon Corp | Euv光源、露光装置及び露光方法 |
JP2006294606A (ja) * | 2005-04-12 | 2006-10-26 | Xtreme Technologies Gmbh | プラズマ放射線源 |
JP2007207574A (ja) | 2006-02-01 | 2007-08-16 | Komatsu Ltd | 極端紫外光源装置 |
JP2007317598A (ja) * | 2006-05-29 | 2007-12-06 | Komatsu Ltd | 極端紫外光源装置 |
JP2008300351A (ja) * | 2007-05-16 | 2008-12-11 | Xtreme Technologies Gmbh | プラズマベースのeuv放射線源用のガスカーテンを生成する装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2475228A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103858176A (zh) * | 2011-10-06 | 2014-06-11 | 浜松光子学株式会社 | 放射线产生装置以及放射线产生方法 |
US9953729B2 (en) | 2011-10-06 | 2018-04-24 | Hamamatsu Photonics K.K. | Radiation generating apparatus and radiation generating method |
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EP2475228A1 (en) | 2012-07-11 |
TWI422286B (zh) | 2014-01-01 |
US20120145930A1 (en) | 2012-06-14 |
TW201130386A (en) | 2011-09-01 |
KR20120066002A (ko) | 2012-06-21 |
JP2011054376A (ja) | 2011-03-17 |
EP2475228A4 (en) | 2015-01-21 |
US9000402B2 (en) | 2015-04-07 |
KR101357231B1 (ko) | 2014-01-29 |
CN102484937A (zh) | 2012-05-30 |
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