JP2009032679A - 発光素子、発光装置、電子機器、および発光素子の作製方法 - Google Patents
発光素子、発光装置、電子機器、および発光素子の作製方法 Download PDFInfo
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- JP2009032679A JP2009032679A JP2008158771A JP2008158771A JP2009032679A JP 2009032679 A JP2009032679 A JP 2009032679A JP 2008158771 A JP2008158771 A JP 2008158771A JP 2008158771 A JP2008158771 A JP 2008158771A JP 2009032679 A JP2009032679 A JP 2009032679A
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- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 1
- KUGSVDXBPQUXKX-UHFFFAOYSA-N n-[9,10-bis(2-phenylphenyl)anthracen-2-yl]-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C(=CC=CC=3)C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C(=CC=CC=3)C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 KUGSVDXBPQUXKX-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HCIIFBHDBOCSAF-UHFFFAOYSA-N octaethylporphyrin Chemical compound N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 HCIIFBHDBOCSAF-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】一対の電極間にEL層を有する発光素子を、無機化合物とハロゲン原子とを含む層、もしくは有機化合物と無機化合物とハロゲン原子とを含む層を用いて覆うことで、水分の侵入による劣化を抑制することができる。よって、長寿命の発光素子を得ることができる。
【選択図】図1
Description
本実施の形態では、第1の封止層を設けた発光素子について説明する。
本実施の形態では、第2の封止層を設けた発光素子について図2を用いて説明する。
本実施の形態は、本発明に係る複数の発光ユニットを積層した構成の発光素子(以下、積層型素子という)の態様について、図3を参照して説明する。この発光素子は、第1の電極と第2の電極との間に、複数の発光ユニットを有する積層型発光素子である。各発光ユニットの構成としては、実施の形態1で示したEL層と同様な構成を用いることができる。つまり、実施の形態1で示した発光素子は、1つの発光ユニットを有する発光素子である。発光ユニットは少なくとも発光層を有していればよく、その他の層の積層構造については特に限定されない。本実施の形態では、複数の発光ユニットを有する発光素子について説明する。
本実施の形態では、本発明の発光素子を有する発光装置について説明する。
本実施の形態では、実施の形態4に示す発光装置をその一部に含む本発明の電子機器について説明する。本発明の電子機器は、実施の形態1〜実施の形態3で示した発光素子を有する表示部を有する。
101 第1の電極
102 第2の電極
103 EL層
111 正孔注入層
112 正孔輸送層
113 発光層
114 電子輸送層
115 電子注入層
121 第1の封止層
122 第2の封止層
300 基板
301 第1の電極
302 第2の電極
311 第1の発光ユニット
312 第2の発光ユニット
313 電荷発生層
401 駆動回路部(ソース側駆動回路)
402 画素部
403 駆動回路部(ゲート側駆動回路)
404 封止基板
405 シール材
407 空間
408 配線
409 FPC(フレキシブルプリントサーキット)
410 素子基板
411 スイッチング用TFT
412 電流制御用TFT
413 第1の電極
414 絶縁物
416 EL層
417 第2の電極
418 発光素子
420 第1の封止層
421 第2の封止層
423 Nチャネル型TFT
424 Pチャネル型TFT
901 筐体
902 液晶層
903 バックライト
904 筐体
905 ドライバIC
906 端子
951 基板
952 電極
953 絶縁層
954 隔壁層
955 EL層
956 電極
2001 筐体
2002 光源
3001 照明装置
9101 筐体
9102 支持台
9103 表示部
9104 スピーカー部
9105 ビデオ入力端子
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9401 本体
9402 筐体
9403 表示部
9404 音声入力部
9405 音声出力部
9406 操作キー
9407 外部接続ポート
9408 アンテナ
9501 本体
9502 表示部
9503 筐体
9504 外部接続ポート
9505 リモコン受信部
9506 受像部
9507 バッテリー
9508 音声入力部
9509 操作キー
9510 接眼部
Claims (15)
- 基板上に形成された第1の電極と、前記第1の電極上に形成されたEL層と、前記EL層上に形成された第2の電極とを有する積層構造体上に、前記積層構造体を覆うように形成された第1の封止層を有し、前記第1の封止層は、無機化合物とハロゲン原子を含むことを特徴とする発光素子。
- 基板上に形成された第1の電極と、前記第1の電極上に形成されたEL層と、前記EL層上に形成された第2の電極とを有する積層構造体上に、前記積層構造体を覆うように形成された第1の封止層を有し、前記第1の封止層は、有機化合物と無機化合物とハロゲン原子を含むことを特徴とする発光素子。
- 基板上に形成された第1の電極と、前記第1の電極上に形成されたEL層と、前記EL層上に形成された第2の電極とを有する積層構造体上に、前記積層構造体を覆うように形成された第1の封止層と、前記第1の封止層を覆うように形成された第2の封止層とを有し、前記第1の封止層は、有機化合物と無機化合物とハロゲン原子を含み、前記第2の封止層は、無機物からなる無機パッシベーション膜であることを特徴とする発光素子。
- 請求項3において、前記無機パッシベーション膜は、窒化珪素、窒化酸化珪素、酸化珪素、酸化アルミニウム、窒化アルミニウム、窒化酸化アルミニウム、またはDLC(ダイヤモンドライクカーボン)のいずれかであることを特徴とする発光素子。
- 請求項1乃至請求項4のいずれか一項において、前記有機化合物は、芳香族アミン化合物、カルバゾール誘導体、芳香族炭化水素、高分子化合物のいずれかであることを特徴とする発光素子。
- 請求項1乃至請求項5のいずれか一項において、前記無機化合物は、酸化バナジウム、酸化ニオブ、酸化タンタル、酸化クロム、酸化モリブデン、酸化タングステン、酸化マンガン、酸化レニウムのいずれかであることを特徴とする発光素子。
- 請求項1乃至請求項6のいずれか一項において、前記ハロゲン原子は、フッ素であることを特徴とする発光素子。
- 請求項1乃至請求項7のいずれか一項において、前記ハロゲン原子の濃度は、1×1020Atoms/cm3以上1×1021Atoms/cm3以下であることを特徴とする発光素子。
- 請求項1乃至請求項8のいずれか一項において、
前記第2の封止層の膜厚は、0.05μm以上10μm以下であることを特徴とする発光素子。 - 請求項1乃至請求項9のいずれか一項において、
前記基板は可撓性を有することを特徴とする発光素子。 - 請求項1乃至請求項10のいずれか一項に記載の発光素子を有する発光装置。
- 請求項11に記載の発光装置を有する電子機器。
- 第1の電極を形成する工程と、前記第1の電極上に、EL層を形成する工程と、前記EL層上に第2の電極を形成する工程と、前記第2の電極上に第1の封止層を形成する工程とを有し、
前記第1の封止層を形成する工程は、無機化合物を含む層を形成する工程と、前記無機化合物を含む層に、イオン注入法によりハロゲン原子を注入し、無機化合物とハロゲン原子を含む層を形成する工程とを有することを特徴とする発光素子の作製方法。 - 第1の電極を形成する工程と、前記第1の電極上に、EL層を形成する工程と、前記EL層上に第2の電極を形成する工程と、前記第2の電極上に第1の封止層を形成する工程とを有し、
前記第1の封止層を形成する工程は、有機化合物と無機化合物を含む層を形成する工程と、前記有機化合物と無機化合物を含む層に、イオン注入法によりハロゲン原子を注入し、有機化合物と無機化合物とハロゲン原子を含む層を形成する工程とを有することを特徴とする発光素子の作製方法。 - 第1の電極を形成する工程と、前記第1の電極上に、EL層を形成する工程と、前記EL層上に第2の電極を形成する工程と、前記第2の電極上に第1の封止層を形成する工程と、前記第1の封止層上に第2の封止層を形成する工程とを有し、
前記第1の封止層を形成する工程は、有機化合物と無機化合物を含む層を形成する工程と、前記有機化合物と無機化合物を含む層に、イオン注入法によりハロゲン原子を注入し、有機化合物と無機化合物とハロゲン原子を含む層を形成する工程とを有し、
前記第2の封止層を形成する工程は、プラズマCVD法、スパッタ法または真空蒸着法により、第2の封止層を形成することを特徴とする発光素子の作製方法。
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KR102136790B1 (ko) | 2013-11-15 | 2020-07-23 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치와, 이의 제조 방법 |
KR101802574B1 (ko) * | 2014-03-28 | 2017-12-01 | 삼성에스디아이 주식회사 | 유기발광소자 봉지용 조성물 및 이로부터 제조된 유기발광소자 표시장치 |
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JP2015062197A (ja) | 2015-04-02 |
TW201521509A (zh) | 2015-06-01 |
TW200920171A (en) | 2009-05-01 |
US8253327B2 (en) | 2012-08-28 |
JP2013127981A (ja) | 2013-06-27 |
CN101335333B (zh) | 2013-01-02 |
TWI573491B (zh) | 2017-03-01 |
TWI483645B (zh) | 2015-05-01 |
JP5816326B2 (ja) | 2015-11-18 |
US20120305907A1 (en) | 2012-12-06 |
JP5208591B2 (ja) | 2013-06-12 |
US8941301B2 (en) | 2015-01-27 |
JP2014150071A (ja) | 2014-08-21 |
JP2017130464A (ja) | 2017-07-27 |
US20090001886A1 (en) | 2009-01-01 |
CN101335333A (zh) | 2008-12-31 |
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