JP2008541452A5 - - Google Patents

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Publication number
JP2008541452A5
JP2008541452A5 JP2008511196A JP2008511196A JP2008541452A5 JP 2008541452 A5 JP2008541452 A5 JP 2008541452A5 JP 2008511196 A JP2008511196 A JP 2008511196A JP 2008511196 A JP2008511196 A JP 2008511196A JP 2008541452 A5 JP2008541452 A5 JP 2008541452A5
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JP
Japan
Prior art keywords
memory cell
diode
monolithic
conductor
volatile memory
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JP2008511196A
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English (en)
Japanese (ja)
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JP2008541452A (ja
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Priority claimed from US11/125,939 external-priority patent/US20060250836A1/en
Priority claimed from US11/395,995 external-priority patent/US7812404B2/en
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Publication of JP2008541452A publication Critical patent/JP2008541452A/ja
Publication of JP2008541452A5 publication Critical patent/JP2008541452A5/ja
Pending legal-status Critical Current

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JP2008511196A 2005-05-09 2006-05-05 ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル Pending JP2008541452A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/125,939 US20060250836A1 (en) 2005-05-09 2005-05-09 Rewriteable memory cell comprising a diode and a resistance-switching material
US11/395,995 US7812404B2 (en) 2005-05-09 2006-03-31 Nonvolatile memory cell comprising a diode and a resistance-switching material
PCT/US2006/017376 WO2006121837A2 (en) 2005-05-09 2006-05-05 Nonvolatile memory cell comprising a diode and a resistance-switching material

Publications (2)

Publication Number Publication Date
JP2008541452A JP2008541452A (ja) 2008-11-20
JP2008541452A5 true JP2008541452A5 (enExample) 2009-10-01

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JP2008511196A Pending JP2008541452A (ja) 2005-05-09 2006-05-05 ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル

Country Status (7)

Country Link
US (4) US7812404B2 (enExample)
EP (5) EP2256744A1 (enExample)
JP (1) JP2008541452A (enExample)
KR (1) KR101335383B1 (enExample)
CN (2) CN102592666A (enExample)
AT (1) ATE525726T1 (enExample)
WO (1) WO2006121837A2 (enExample)

Families Citing this family (239)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100821456B1 (ko) * 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US7767499B2 (en) * 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7176064B2 (en) * 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7682920B2 (en) 2003-12-03 2010-03-23 Sandisk 3D Llc Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US8018024B2 (en) 2003-12-03 2011-09-13 Sandisk 3D Llc P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
KR100612872B1 (ko) 2004-11-16 2006-08-14 삼성전자주식회사 채널의 물성이 인가전압에 따라 가변적인 트랜지스터와 그제조 및 동작 방법
US8314024B2 (en) 2008-12-19 2012-11-20 Unity Semiconductor Corporation Device fabrication
US8031509B2 (en) * 2008-12-19 2011-10-04 Unity Semiconductor Corporation Conductive metal oxide structures in non-volatile re-writable memory devices
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
KR101176542B1 (ko) * 2006-03-02 2012-08-24 삼성전자주식회사 비휘발성 메모리 소자 및 이를 포함하는 메모리 어레이
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7808810B2 (en) 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7575984B2 (en) * 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
US7450414B2 (en) 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US7522448B2 (en) * 2006-07-31 2009-04-21 Sandisk 3D Llc Controlled pulse operations in non-volatile memory
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7486587B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Dual data-dependent busses for coupling read/write circuits to a memory array
US7495947B2 (en) * 2006-07-31 2009-02-24 Sandisk 3D Llc Reverse bias trim operations in non-volatile memory
WO2008016420A2 (en) * 2006-07-31 2008-02-07 Sandisk 3D Llc Multi-use memory cell and memory array and method for use therewith
US7719874B2 (en) * 2006-07-31 2010-05-18 Sandisk 3D Llc Systems for controlled pulse operations in non-volatile memory
US7554832B2 (en) * 2006-07-31 2009-06-30 Sandisk 3D Llc Passive element memory array incorporating reversible polarity word line and bit line decoders
US7542337B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Apparatus for reading a multi-level passive element memory cell array
US7499366B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc Method for using dual data-dependent busses for coupling read/write circuits to a memory array
US7486537B2 (en) 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US8279704B2 (en) 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7492630B2 (en) * 2006-07-31 2009-02-17 Sandisk 3D Llc Systems for reverse bias trim operations in non-volatile memory
US7499304B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc Systems for high bandwidth one time field-programmable memory
US7463536B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Memory array incorporating two data busses for memory array block selection
US7633828B2 (en) * 2006-07-31 2009-12-15 Sandisk 3D Llc Hierarchical bit line bias bus for block selectable memory array
US7463546B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
TWI356415B (en) * 2006-07-31 2012-01-11 Sandisk 3D Llc Method of operating non-volatile storage and non-v
US7542338B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
US7596050B2 (en) * 2006-07-31 2009-09-29 Sandisk 3D Llc Method for using a hierarchical bit line bias bus for block selectable memory array
US7570523B2 (en) * 2006-07-31 2009-08-04 Sandisk 3D Llc Method for using two data busses for memory array block selection
JP4655021B2 (ja) * 2006-10-12 2011-03-23 セイコーエプソン株式会社 可変抵抗素子
CN101553925B (zh) * 2006-11-15 2013-08-14 桑迪士克3D公司 邻近于硅化物而结晶的与介电反熔丝串联的p-i-n二极管及其形成方法
KR100846502B1 (ko) * 2006-11-21 2008-07-17 삼성전자주식회사 비휘발성 메모리소자 및 그 제조방법
KR100982424B1 (ko) * 2006-11-28 2010-09-15 삼성전자주식회사 저항 메모리 소자의 제조 방법
US7525869B2 (en) * 2006-12-31 2009-04-28 Sandisk 3D Llc Method for using a reversible polarity decoder circuit
US7542370B2 (en) * 2006-12-31 2009-06-02 Sandisk 3D Llc Reversible polarity decoder circuit
US7477093B2 (en) * 2006-12-31 2009-01-13 Sandisk 3D Llc Multiple polarity reversible charge pump circuit
US7495500B2 (en) * 2006-12-31 2009-02-24 Sandisk 3D Llc Method for using a multiple polarity reversible charge pump circuit
KR20080064353A (ko) * 2007-01-04 2008-07-09 삼성전자주식회사 저항 메모리 소자 및 그 제조 방법
KR100855975B1 (ko) 2007-01-30 2008-09-02 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR100885184B1 (ko) * 2007-01-30 2009-02-23 삼성전자주식회사 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법
US7678607B2 (en) * 2007-02-05 2010-03-16 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7972897B2 (en) * 2007-02-05 2011-07-05 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7704789B2 (en) 2007-02-05 2010-04-27 Intermolecular, Inc. Methods for forming resistive switching memory elements
US8344375B2 (en) * 2007-03-05 2013-01-01 Intermolecular, Inc. Nonvolatile memory elements with metal deficient resistive switching metal oxides
US8097878B2 (en) 2007-03-05 2012-01-17 Intermolecular, Inc. Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
KR101432344B1 (ko) 2007-03-05 2014-08-20 인터몰레큘러 인코퍼레이티드 저항 스위칭 금속 산화물을 가진 비휘발성 메모리 소자를 형성하는 방법
US7629198B2 (en) 2007-03-05 2009-12-08 Intermolecular, Inc. Methods for forming nonvolatile memory elements with resistive-switching metal oxides
CN101636841B (zh) * 2007-03-22 2011-06-22 松下电器产业株式会社 存储元件和存储装置
US7586773B2 (en) * 2007-03-27 2009-09-08 Sandisk 3D Llc Large array of upward pointing p-i-n diodes having large and uniform current
US7982209B2 (en) * 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
US7667999B2 (en) * 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
EP2140492A1 (en) * 2007-03-27 2010-01-06 Sandisk 3D LLC Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same
US7558140B2 (en) * 2007-03-31 2009-07-07 Sandisk 3D Llc Method for using a spatially distributed amplifier circuit
US7554406B2 (en) 2007-03-31 2009-06-30 Sandisk 3D Llc Spatially distributed amplifier circuit
JP2008263061A (ja) * 2007-04-12 2008-10-30 Elpida Memory Inc ヒューズ素子構造、半導体装置および半導体装置の製造方法
US8144498B2 (en) * 2007-05-09 2012-03-27 Intermolecular, Inc. Resistive-switching nonvolatile memory elements
US8975613B1 (en) 2007-05-09 2015-03-10 Intermolecular, Inc. Resistive-switching memory elements having improved switching characteristics
US20080315206A1 (en) * 2007-06-19 2008-12-25 Herner S Brad Highly Scalable Thin Film Transistor
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
EP2162917A1 (en) * 2007-06-29 2010-03-17 Sandisk 3d, Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7773446B2 (en) * 2007-06-29 2010-08-10 Sandisk 3D Llc Methods and apparatus for extending the effective thermal operating range of a memory
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
WO2009005700A2 (en) * 2007-06-29 2009-01-08 Sandisk 3D, Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
WO2009015298A2 (en) * 2007-07-25 2009-01-29 Intermolecular, Inc. Nonvolatile memory elements
US8101937B2 (en) * 2007-07-25 2012-01-24 Intermolecular, Inc. Multistate nonvolatile memory elements
US7846782B2 (en) 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US20090095985A1 (en) * 2007-10-10 2009-04-16 Samsung Electronics Co., Ltd. Multi-layer electrode, cross point memory array and method of manufacturing the same
JP2009164580A (ja) 2007-11-07 2009-07-23 Interuniv Micro Electronica Centrum Vzw 抵抗スイッチングＮｉＯ層を含むメモリ素子の製造方法、およびそのデバイス
US7759201B2 (en) * 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US8283214B1 (en) 2007-12-21 2012-10-09 Intermolecular, Inc. Methods for forming nickel oxide films for use with resistive switching memory devices
US7706169B2 (en) * 2007-12-27 2010-04-27 Sandisk 3D Llc Large capacity one-time programmable memory cell using metal oxides
US7764534B2 (en) * 2007-12-28 2010-07-27 Sandisk 3D Llc Two terminal nonvolatile memory using gate controlled diode elements
US8236623B2 (en) * 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
KR20090081153A (ko) * 2008-01-23 2009-07-28 삼성전자주식회사 저항성 메모리 소자 및 그 제조방법
US8143092B2 (en) 2008-03-10 2012-03-27 Pragati Kumar Methods for forming resistive switching memory elements by heating deposited layers
US7960216B2 (en) * 2008-05-10 2011-06-14 Intermolecular, Inc. Confinement techniques for non-volatile resistive-switching memories
US8343813B2 (en) * 2009-04-10 2013-01-01 Intermolecular, Inc. Resistive-switching memory elements having improved switching characteristics
US8183553B2 (en) * 2009-04-10 2012-05-22 Intermolecular, Inc. Resistive switching memory element including doped silicon electrode
KR100976424B1 (ko) * 2008-03-14 2010-08-17 재단법인서울대학교산학협력재단 저항변화기록소자에 이용되는 스위칭 다이오드 및 이를이용한 저항변화기록소자와 저항변화 랜덤 액세스 메모리
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7961494B2 (en) 2008-04-11 2011-06-14 Sandisk 3D Llc Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US7723180B2 (en) * 2008-04-11 2010-05-25 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US8048474B2 (en) * 2008-04-11 2011-11-01 Sandisk 3D Llc Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
US7859887B2 (en) * 2008-04-11 2010-12-28 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US7981592B2 (en) * 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
US8084366B2 (en) * 2008-04-11 2011-12-27 Sandisk 3D Llc Modified DARC stack for resist patterning
US7713818B2 (en) * 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US7786015B2 (en) * 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
US7977152B2 (en) * 2008-05-10 2011-07-12 Intermolecular, Inc. Non-volatile resistive-switching memories formed using anodization
KR101481401B1 (ko) * 2008-05-19 2015-01-14 삼성전자주식회사 비휘발성 기억 장치
US8008096B2 (en) * 2008-06-05 2011-08-30 Intermolecular, Inc. ALD processing techniques for forming non-volatile resistive-switching memories
EP2139054A3 (en) * 2008-06-25 2011-08-31 Samsung Electronics Co., Ltd. Memory device and method of manufacturing the same
US8547725B2 (en) * 2008-06-27 2013-10-01 Sandisk 3D Llc Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
US7732235B2 (en) 2008-06-30 2010-06-08 Sandisk 3D Llc Method for fabricating high density pillar structures by double patterning using positive photoresist
US7781269B2 (en) * 2008-06-30 2010-08-24 Sandisk 3D Llc Triangle two dimensional complementary patterning of pillars
WO2010004675A1 (ja) * 2008-07-11 2010-01-14 パナソニック株式会社 電流抑制素子、記憶素子、及びこれらの製造方法
TW201021161A (en) * 2008-07-18 2010-06-01 Sandisk 3D Llc Carbon-based resistivity-switching materials and methods of forming the same
US8557685B2 (en) * 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8130528B2 (en) * 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
JP5454945B2 (ja) * 2008-09-05 2014-03-26 株式会社東芝 記憶装置
JP5306363B2 (ja) * 2008-09-09 2013-10-02 株式会社東芝 情報記録再生装置
US8008213B2 (en) * 2008-09-30 2011-08-30 Sandisk 3D Llc Self-assembly process for memory array
US8076056B2 (en) * 2008-10-06 2011-12-13 Sandisk 3D Llc Method of making sub-resolution pillar structures using undercutting technique
US8049305B1 (en) 2008-10-16 2011-11-01 Intermolecular, Inc. Stress-engineered resistance-change memory device
US8080443B2 (en) * 2008-10-27 2011-12-20 Sandisk 3D Llc Method of making pillars using photoresist spacer mask
KR20100052080A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
US7978496B2 (en) 2008-12-18 2011-07-12 Sandisk 3D Llc Method of programming a nonvolatile memory device containing a carbon storage material
US7910407B2 (en) * 2008-12-19 2011-03-22 Sandisk 3D Llc Quad memory cell and method of making same
US8030734B2 (en) * 2008-12-30 2011-10-04 Stmicroelectronics S.R.L. Forming phase change memories with a breakdown layer sandwiched by phase change memory material
US8084347B2 (en) 2008-12-31 2011-12-27 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US7846756B2 (en) * 2008-12-31 2010-12-07 Sandisk 3D Llc Nanoimprint enhanced resist spacer patterning method
US8114765B2 (en) 2008-12-31 2012-02-14 Sandisk 3D Llc Methods for increased array feature density
KR101583717B1 (ko) 2009-01-13 2016-01-11 삼성전자주식회사 저항 메모리 장치의 제조방법
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
US8420478B2 (en) * 2009-03-31 2013-04-16 Intermolecular, Inc. Controlled localized defect paths for resistive memories
KR20100111531A (ko) * 2009-04-07 2010-10-15 삼성전자주식회사 다이오드를 갖는 메모리 장치 및 그 제조 방법
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
CN101882628B (zh) * 2009-05-06 2012-09-05 中国科学院微电子研究所 一种用于交叉阵列结构存储器的整流器件
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
KR20100130419A (ko) * 2009-06-03 2010-12-13 삼성전자주식회사 이종접합 다이오드와 그 제조방법 및 이종접합 다이오드를 포함하는 전자소자
US20130234103A1 (en) * 2009-08-31 2013-09-12 Hewlett-Packard Development Company, L.P. Nanoscale switching device with an amorphous switching material
JP5006369B2 (ja) * 2009-09-18 2012-08-22 株式会社東芝 不揮発性半導体記憶装置
US8274065B2 (en) * 2009-10-19 2012-09-25 Macronix International Co., Ltd. Memory and method of fabricating the same
US8274130B2 (en) 2009-10-20 2012-09-25 Sandisk 3D Llc Punch-through diode steering element
US8072795B1 (en) 2009-10-28 2011-12-06 Intermolecular, Inc. Biploar resistive-switching memory with a single diode per memory cell
US8198124B2 (en) * 2010-01-05 2012-06-12 Micron Technology, Inc. Methods of self-aligned growth of chalcogenide memory access device
US8026178B2 (en) 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
US7923305B1 (en) 2010-01-12 2011-04-12 Sandisk 3D Llc Patterning method for high density pillar structures
US8431492B2 (en) 2010-02-02 2013-04-30 Sandisk 3D Llc Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
WO2011097389A1 (en) 2010-02-04 2011-08-11 Sandisk 3D Llc Non-volatile memory cell containing nanodots and method of making thereof
US8416609B2 (en) 2010-02-15 2013-04-09 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8437174B2 (en) 2010-02-15 2013-05-07 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
US8686419B2 (en) * 2010-02-23 2014-04-01 Sandisk 3D Llc Structure and fabrication method for resistance-change memory cell in 3-D memory
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
JP2011222929A (ja) * 2010-03-23 2011-11-04 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
US8395942B2 (en) 2010-05-17 2013-03-12 Sandisk Technologies Inc. Junctionless TFT NAND flash memory
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US20110297912A1 (en) 2010-06-08 2011-12-08 George Samachisa Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
JP5580126B2 (ja) * 2010-07-14 2014-08-27 株式会社東芝 不揮発性記憶装置及びその製造方法
JP5566217B2 (ja) * 2010-07-30 2014-08-06 株式会社東芝 不揮発性記憶装置
US8634224B2 (en) 2010-08-12 2014-01-21 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US8264868B2 (en) 2010-10-25 2012-09-11 Hewlett-Packard Development Company, L.P. Memory array with metal-insulator transition switching devices
WO2012057499A2 (ko) * 2010-10-26 2012-05-03 한양대학교 산학협력단 정류특성 또는 오믹 접합층을 가지는 저항변화 메모리
US8557654B2 (en) * 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
CN103794720B (zh) 2010-12-14 2017-01-04 桑迪士克科技有限责任公司 具有双栅极垂直选择器件的三维非易失性存储器
US8866124B2 (en) 2011-02-02 2014-10-21 Sandisk 3D Llc Diodes with native oxide regions for use in memory arrays and methods of forming the same
RU2468471C1 (ru) * 2011-04-07 2012-11-27 Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" Способ получения энергонезависимого элемента памяти
US8394670B2 (en) * 2011-05-31 2013-03-12 Crossbar, Inc. Vertical diodes for non-volatile memory device
CN102810632A (zh) * 2011-06-01 2012-12-05 复旦大学 一种并联电阻型存储器及其制备方法
CN102214790A (zh) * 2011-06-10 2011-10-12 清华大学 一种具有自整流效应的阻变存储器
RU2470409C1 (ru) * 2011-06-16 2012-12-20 Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" Способ получения диода на основе оксида ниобия
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US9142767B2 (en) 2011-09-16 2015-09-22 Micron Technology, Inc. Resistive memory cell including integrated select device and storage element
US9349445B2 (en) 2011-09-16 2016-05-24 Micron Technology, Inc. Select devices for memory cell applications
US8879299B2 (en) 2011-10-17 2014-11-04 Sandisk 3D Llc Non-volatile memory cell containing an in-cell resistor
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9129681B2 (en) 2012-04-13 2015-09-08 Sandisk Technologies Inc. Thin film transistor
US9171584B2 (en) 2012-05-15 2015-10-27 Sandisk 3D Llc Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
US8822288B2 (en) 2012-07-02 2014-09-02 Sandisk Technologies Inc. NAND memory device containing nanodots and method of making thereof
KR101345588B1 (ko) * 2012-07-17 2013-12-31 한양대학교 에리카산학협력단 인 또는 붕소가 도핑된 Ａｕ－ＮｉＯ－Ａｕ 구조의 다층형 나노 와이어 및 이의 제조방법
KR20150041609A (ko) 2012-07-31 2015-04-16 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 비휘발성 저항성 메모리 셀
US8823075B2 (en) 2012-11-30 2014-09-02 Sandisk Technologies Inc. Select gate formation for nanodot flat cell
US8987802B2 (en) 2013-02-28 2015-03-24 Sandisk Technologies Inc. Method for using nanoparticles to make uniform discrete floating gate layer
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
WO2014138124A1 (en) 2013-03-04 2014-09-12 Sandisk 3D Llc Vertical bit line non-volatile memory systems and methods of fabrication
US9165933B2 (en) 2013-03-07 2015-10-20 Sandisk 3D Llc Vertical bit line TFT decoder for high voltage operation
US9331181B2 (en) 2013-03-11 2016-05-03 Sandisk Technologies Inc. Nanodot enhanced hybrid floating gate for non-volatile memory devices
JP6163817B2 (ja) * 2013-03-26 2017-07-19 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
JP6102418B2 (ja) * 2013-03-28 2017-03-29 凸版印刷株式会社 不揮発性メモリ素子、不揮発性メモリセルおよび不揮発性メモリ
KR20140128482A (ko) * 2013-04-25 2014-11-06 에스케이하이닉스 주식회사 저항변화 메모리 소자와 이를 위한 쓰기제어 회로, 이를 포함하는 메모리 장치 및 데이터 처리 시스템과 동작 방법
US9177808B2 (en) 2013-05-21 2015-11-03 Sandisk Technologies Inc. Memory device with control gate oxygen diffusion control and method of making thereof
US8969153B2 (en) 2013-07-01 2015-03-03 Sandisk Technologies Inc. NAND string containing self-aligned control gate sidewall cladding
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
CN104835911B (zh) * 2014-02-07 2021-01-01 科洛斯巴股份有限公司 使用集成电路铸造相容工艺的单片集成电阻式存储器
US9362338B2 (en) 2014-03-03 2016-06-07 Sandisk Technologies Inc. Vertical thin film transistors in non-volatile storage systems
US9379246B2 (en) 2014-03-05 2016-06-28 Sandisk Technologies Inc. Vertical thin film transistor selection devices and methods of fabrication
US9263218B2 (en) * 2014-05-23 2016-02-16 Nuvoton Technology Corporation Variable resistance memory cell based electrically resettable fuse device
KR20150145631A (ko) 2014-06-20 2015-12-30 에스케이하이닉스 주식회사 크로스 포인트 어레이를 구비하는 반도체 장치의 제조 방법
US9502102B1 (en) * 2014-07-25 2016-11-22 Crossbar, Inc. MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory
US9373410B1 (en) 2014-07-25 2016-06-21 Crossbar, Inc. MLC OTP operation in A-Si RRAM
US9627009B2 (en) 2014-07-25 2017-04-18 Sandisk Technologies Llc Interleaved grouped word lines for three dimensional non-volatile storage
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
US9450023B1 (en) 2015-04-08 2016-09-20 Sandisk Technologies Llc Vertical bit line non-volatile memory with recessed word lines
CN105679785B (zh) * 2016-01-18 2018-11-27 苏州大学 一种基于多层氮化硼的rram器件及其制备方法
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
TWI640005B (zh) * 2016-12-27 2018-11-01 旺宏電子股份有限公司 在積體電路上生成資料集的方法、製造積體電路的方法、以及積體電路裝置
US9852791B1 (en) * 2016-12-27 2017-12-26 Macronix International Co., Ltd. Semiconductor memory device, chip ID generation method thereof and manufacturing method thereof
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
SG11202009807UA (en) 2018-04-04 2020-11-27 Univ New York State Res Found Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
US11011227B2 (en) * 2018-06-15 2021-05-18 Arm Ltd. Method, system and device for non-volatile memory device operation
US10741585B2 (en) * 2018-06-29 2020-08-11 Sandisk Technologies Llc Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
US12449593B2 (en) 2019-06-18 2025-10-21 The Research Foundation For The State University Of New York Fabricating photonics structure conductive pathways

Family Cites Families (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1582404A (en) 1924-09-27 1926-04-27 Edwin F Hurst Dehydrator for petroleum emulsions
US2655609A (en) 1952-07-22 1953-10-13 Bell Telephone Labor Inc Bistable circuits, including transistors
FR1223418A (fr) 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
GB1284645A (en) 1970-01-30 1972-08-09 Welwyn Electric Ltd Then film device
US3796926A (en) 1971-03-29 1974-03-12 Ibm Bistable resistance device which does not require forming
US3717852A (en) * 1971-09-17 1973-02-20 Ibm Electronically rewritable read-only memory using via connections
US3795977A (en) * 1971-12-30 1974-03-12 Ibm Methods for fabricating bistable resistors
IT982622B (it) 1972-06-05 1974-10-21 Ibm Dispositivo di memorizzazione perfezionato
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
US4204028A (en) 1978-03-16 1980-05-20 Ppg Industries, Inc. Conductive metal oxide film for solar energy control
US4499557A (en) 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
GB2164491B (en) 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
FR2623038B1 (fr) 1987-11-10 1994-05-20 Thomson Csf Matrice d'elements photosensibles associant un phototransistor et une capacite de stockage
US5075738A (en) * 1988-03-28 1991-12-24 Canon Kabushiki Kaisha Switching device and method of preparing it
DE3817826A1 (de) 1988-05-26 1989-11-30 Deutsche Automobilgesellsch Waessrige nickelhydroxid-paste hoher fliessfaehigkeit
US5037200A (en) 1989-07-11 1991-08-06 Tosoh Corporation Laser-operated detector
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
US5273915A (en) 1992-10-05 1993-12-28 Motorola, Inc. Method for fabricating bipolar junction and MOS transistors on SOI
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6750091B1 (en) 1996-03-01 2004-06-15 Micron Technology Diode formation method
WO1997032340A1 (en) * 1996-03-01 1997-09-04 Micron Technology, Inc. Novel vertical diode structures with low series resistance
US5687112A (en) 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US5876788A (en) 1997-01-16 1999-03-02 International Business Machines Corporation High dielectric TiO2 -SiN composite films for memory applications
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US5774394A (en) 1997-05-22 1998-06-30 Motorola, Inc. Magnetic memory cell with increased GMR ratio
US6465370B1 (en) 1998-06-26 2002-10-15 Infineon Technologies Ag Low leakage, low capacitance isolation material
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
EP1153434A1 (en) * 1999-02-17 2001-11-14 International Business Machines Corporation Microelectronic device for storing information and method thereof
EP1143537A1 (en) * 1999-09-27 2001-10-10 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect memory device and method for producing the same
JP4491870B2 (ja) 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
US6927411B2 (en) 2000-02-11 2005-08-09 Axon Technologies Corporation Programmable structure, an array including the structure, and methods of forming the same
GB0006142D0 (en) 2000-03-14 2000-05-03 Isis Innovation Spin transistor
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6761985B2 (en) 2000-10-05 2004-07-13 Battelle Memorial Institute Magnetic transparent conducting oxide film and method of making
US6587370B2 (en) 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
US7195840B2 (en) 2001-07-13 2007-03-27 Kaun Thomas D Cell structure for electrochemical devices and method of making same
JP4434527B2 (ja) * 2001-08-08 2010-03-17 株式会社東芝 半導体記憶装置
KR100860134B1 (ko) * 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6778441B2 (en) 2001-08-30 2004-08-17 Micron Technology, Inc. Integrated circuit memory device and method
US6545287B2 (en) 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6541792B1 (en) 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6549447B1 (en) * 2001-10-31 2003-04-15 Peter Fricke Memory cell structure
US6879525B2 (en) 2001-10-31 2005-04-12 Hewlett-Packard Development Company, L.P. Feedback write method for programmable memory
US6483734B1 (en) 2001-11-26 2002-11-19 Hewlett Packard Company Memory device having memory cells capable of four states
US6534841B1 (en) 2001-12-14 2003-03-18 Hewlett-Packard Company Continuous antifuse material in memory structure
KR100642186B1 (ko) 2002-04-04 2006-11-10 가부시끼가이샤 도시바 상-변화 메모리 디바이스
US6855975B2 (en) * 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6952043B2 (en) 2002-06-27 2005-10-04 Matrix Semiconductor, Inc. Electrically isolated pillars in active devices
US6774458B2 (en) 2002-07-23 2004-08-10 Hewlett Packard Development Company, L.P. Vertical interconnection structure and methods
US7186569B2 (en) 2002-08-02 2007-03-06 Unity Semiconductor Corporation Conductive memory stack with sidewall
US6859382B2 (en) 2002-08-02 2005-02-22 Unity Semiconductor Corporation Memory array of a non-volatile ram
US6965137B2 (en) 2002-08-02 2005-11-15 Unity Semiconductor Corporation Multi-layer conductive memory device
US6970375B2 (en) 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US7038935B2 (en) 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
US6850429B2 (en) 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6834008B2 (en) 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US6856536B2 (en) 2002-08-02 2005-02-15 Unity Semiconductor Corporation Non-volatile memory with a single transistor and resistive memory element
US7326979B2 (en) 2002-08-02 2008-02-05 Unity Semiconductor Corporation Resistive memory device with a treated interface
US7071008B2 (en) 2002-08-02 2006-07-04 Unity Semiconductor Corporation Multi-resistive state material that uses dopants
US6917539B2 (en) 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US6831854B2 (en) 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US7042035B2 (en) 2002-08-02 2006-05-09 Unity Semiconductor Corporation Memory array with high temperature wiring
US6870755B2 (en) 2002-08-02 2005-03-22 Unity Semiconductor Corporation Re-writable memory with non-linear memory element
US6836421B2 (en) 2002-08-02 2004-12-28 Unity Semiconductor Corporation Line drivers that fit within a specified line pitch
US6798685B2 (en) 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
US6850455B2 (en) 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6754097B2 (en) * 2002-09-03 2004-06-22 Hewlett-Packard Development Company, L.P. Read operations on multi-bit memory cells in resistive cross point arrays
US6940744B2 (en) 2002-10-31 2005-09-06 Unity Semiconductor Corporation Adaptive programming technique for a re-writable conductive memory device
US6847047B2 (en) 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
US6989806B2 (en) 2002-11-20 2006-01-24 Osram Opto Semiconductors Gmbh Current limiting device
JP2004193312A (ja) * 2002-12-11 2004-07-08 Matsushita Electric Ind Co Ltd 抵抗変化素子を用いたメモリセルとその制御方法
US20050158950A1 (en) 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series
US7800933B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7265049B2 (en) 2002-12-19 2007-09-04 Sandisk 3D Llc Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
US7176064B2 (en) 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
US7238607B2 (en) 2002-12-19 2007-07-03 Sandisk 3D Llc Method to minimize formation of recess at surface planarized by chemical mechanical planarization
US20060249753A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US6946719B2 (en) 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
JP2006511965A (ja) 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US8637366B2 (en) 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
WO2004084229A1 (en) * 2003-03-18 2004-09-30 Kabushiki Kaisha Toshiba Programmable resistance memory device
JP4254293B2 (ja) * 2003-03-25 2009-04-15 株式会社日立製作所 記憶装置
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US6858883B2 (en) * 2003-06-03 2005-02-22 Hewlett-Packard Development Company, L.P. Partially processed tunnel junction control element
US6921912B2 (en) * 2003-06-03 2005-07-26 Micron Technology, Inc. Diode/superionic conductor/polymer memory structure
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
WO2005008783A1 (ja) * 2003-07-18 2005-01-27 Nec Corporation スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
JP4356542B2 (ja) 2003-08-27 2009-11-04 日本電気株式会社 半導体装置
US7274035B2 (en) 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
DE10342026A1 (de) 2003-09-11 2005-04-28 Infineon Technologies Ag Speicherzelle mit Ionenleitungsspeichermechanismus und Verfahren zu deren Herstellung
JPWO2005041303A1 (ja) 2003-10-23 2007-04-26 松下電器産業株式会社 抵抗変化素子、その製造方法、その素子を含むメモリ、およびそのメモリの駆動方法
US7172840B2 (en) 2003-12-05 2007-02-06 Sandisk Corporation Photomask features with interior nonprinting window using alternating phase shifting
US20050221200A1 (en) 2004-04-01 2005-10-06 Matrix Semiconductor, Inc. Photomask features with chromeless nonprinting phase shifting window
DE102004020575B3 (de) 2004-04-27 2005-08-25 Infineon Technologies Ag Halbleiterspeicherbauelement in Cross-Point-Architektur
KR101051704B1 (ko) 2004-04-28 2011-07-25 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
DE102004024610B3 (de) 2004-05-18 2005-12-29 Infineon Technologies Ag Festkörperelektrolytschaltelement
US7307013B2 (en) 2004-06-30 2007-12-11 Sandisk 3D Llc Nonselective unpatterned etchback to expose buried patterned features
US7224013B2 (en) * 2004-09-29 2007-05-29 Sandisk 3D Llc Junction diode comprising varying semiconductor compositions
US7405465B2 (en) * 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
US20060067117A1 (en) 2004-09-29 2006-03-30 Matrix Semiconductor, Inc. Fuse memory cell comprising a diode, the diode serving as the fuse element
US7189626B2 (en) 2004-11-03 2007-03-13 Micron Technology, Inc. Electroless plating of metal caps for chalcogenide-based memory devices
KR100657911B1 (ko) 2004-11-10 2006-12-14 삼성전자주식회사 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자
US7391064B1 (en) * 2004-12-01 2008-06-24 Spansion Llc Memory device with a selection element and a control line in a substantially similar layer
US7300876B2 (en) 2004-12-14 2007-11-27 Sandisk 3D Llc Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
KR100682908B1 (ko) * 2004-12-21 2007-02-15 삼성전자주식회사 두개의 저항체를 지닌 비휘발성 메모리 소자
US7307268B2 (en) 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
DE102005005938B4 (de) * 2005-02-09 2009-04-30 Qimonda Ag Resistives Speicherelement mit verkürzter Löschzeit, Verfahren zur Herstellung und Speicherzellen-Anordnung
US7553611B2 (en) 2005-03-31 2009-06-30 Sandisk 3D Llc Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US20060273298A1 (en) 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
KR100622268B1 (ko) 2005-07-04 2006-09-11 한양대학교 산학협력단 ＲｅＲＡＭ 소자용 다층 이원산화박막의 형성방법
US20070010100A1 (en) 2005-07-11 2007-01-11 Matrix Semiconductor, Inc. Method of plasma etching transition metals and their compounds
US7053445B1 (en) 2005-08-02 2006-05-30 Spansion Llc Memory device with barrier layer
JP3889023B2 (ja) 2005-08-05 2007-03-07 シャープ株式会社 可変抵抗素子とその製造方法並びにそれを備えた記憶装置
US7816659B2 (en) 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7834338B2 (en) 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
JP4017650B2 (ja) 2005-12-02 2007-12-05 シャープ株式会社 可変抵抗素子及びその製造方法
US20070132049A1 (en) 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
ATE480873T1 (de) 2005-12-20 2010-09-15 Nxp Bv Vertikale phasenwechsel-speicherzelle und herstellungsverfahren dafür
US7501331B2 (en) * 2006-03-31 2009-03-10 Sandisk 3D Llc Low-temperature metal-induced crystallization of silicon-germanium films
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7808810B2 (en) 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7829875B2 (en) 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
KR100717286B1 (ko) 2006-04-21 2007-05-15 삼성전자주식회사 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자
WO2008068800A1 (ja) 2006-11-30 2008-06-12 Fujitsu Limited 抵抗記憶素子及びその製造方法、並びに不揮発性半導体記憶装置
JP5091491B2 (ja) 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置
US20090104756A1 (en) 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7846785B2 (en) 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
CN106331549A (zh) 2015-06-30 2017-01-11 中强光电股份有限公司 投影机装置

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