JP2008022015A - 次数結合プリズム - Google Patents
次数結合プリズム Download PDFInfo
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- JP2008022015A JP2008022015A JP2007185484A JP2007185484A JP2008022015A JP 2008022015 A JP2008022015 A JP 2008022015A JP 2007185484 A JP2007185484 A JP 2007185484A JP 2007185484 A JP2007185484 A JP 2007185484A JP 2008022015 A JP2008022015 A JP 2008022015A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
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- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Length Measuring Devices By Optical Means (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
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Abstract
【解決手段】アライメントシステムにおいて、2つの重なり合う、相対回転されたアライメントマーカの像を作り出す自己参照干渉計を用いる。検出器が像のフーリエ変換が干渉させられる瞳面における強度を検出する。干渉された次数における強度変化として示される、2つの像の回折次数間の位相差から位置情報が得られる。回折次数のどちらかのサイドの2つの位置で強度を測定することにより非対称性もまた計測可能である。
【選択図】図2
Description
− マスク。マスクの概念はリソグラフィにおいて周知のものであり、これには、様々なハイブリッドマスクタイプのみならず、バイナリマスク、レベンソンマスク、減衰位相シフトマスクといったようなマスクタイプも含まれる。放射線ビームにこのようなマスクを配置することにより、マスクに照射する放射線の、マスクパターンに従う選択的透過(透過性マスクの場合)や選択的反射(反射性マスクの場合)を可能にする。マスクの場合、その支持構造は一般的に、入射する放射線ビームの所望する位置にマスクを保持しておくことが可能であり、かつ、必要な場合、ビームに対して運動させることの可能なマスクテーブルである。
− プログラマブルミラーアレイ。このようなデバイスの一例として、粘弾性制御層および反射面を有するマトリクスアドレス可能面があげられる。こうした装置の基本的原理は、(例えば)反射面のアドレスされた領域は入射光を回折光として反射するが、アドレスされていない領域は入射光を非回折光として反射するといったことである。適切なフィルタを使用することにより、回折光のみを残して上記非回折光を反射ビームからフィルタすることが可能である。この方法において、ビームはマトリクスアドレス可能面のアドレスパターンに従ってパターン形成される。プログラマブルミラーアレイのまた別の実施形態では小さな複数のミラーのマトリクス配列を用いる。そのミラーの各々は、適した局部電界を適用することによって、もしくは圧電作動手段を用いることによって、軸を中心に個々に傾けられている。もう一度言うと、ミラーはマトリクスアドレス可能であり、それによりアドレスされたミラーはアドレスされていないミラーとは異なる方向に入射の放射線ビームを反射する。このようにして、反射されたビームはマトリクスアドレス可能ミラーのアドレスパターンに従いパターン形成される。必要とされるマトリクスアドレッシングは適切な電子手段を用いて実行される。前述の両方の状況において、パターニング手段は1つ以上のプログラマブルミラーアレイから構成可能である。ここで言及するミラーアレイの詳細は例えば、米国特許第US5,296,891号および同第US5,523,193号、並びに、PCT特許種出願第WO98/38597および同WO98/33096に記載されている。プログラマブルミラーアレイの場合、上記支持構造は、例えばフレームもしくはテーブルとして具体化され、これは必要に応じて、固定式となるか、もしくは可動式となる。
− プログラマブルLCDアレイ。このような構成の例が、米国特許第US5,229,872号に詳細に説明されているので参照されたい。上記同様、この場合における支持構造も、例えばフレームもしくはテーブルとして具体化され、これも必要に応じて、固定式となるか、もしくは可動式となる。簡潔化の目的で、本文の残りを、特定の箇所において、マスクおよびマスクテーブルを必要とする例に限定して導くものとする。しかし、こうした例において論じられる一般的な原理は、既に述べたようなパターニング手段として広義に理解するべきである。
図1は、本発明の特別な実施形態に基づいたリソグラフィ投影装置を示したものである。この装置は、特別な本実施形態において放射線源LAも備えた、放射線の投影ビームPB(例えばDUV放射線)を供給する放射線システムEx、ILと、マスクMA(例えばレクチル)を保持するマスクホルダーを備え、かつ、品目PLに対して正確にマスクの位置決めを行う第一位置決め手段に連結を行った第一オブジェクト・テーブル(マスクテーブル)MTと、基板W(例えば、レジスト塗布シリコンウェーハ)を保持する基板ホルダーを備え、かつ、品目PLに対して正確に基板の位置決めを行う第二位置決め手段に連結を行った第二オブジェクト・テーブル(基板テーブル)WTと、マスクMAの照射部分を、基板Wの目標部分C(例えば、1つあるいはそれ以上のダイから成る)に像形成する投影システム(「レンズ」)PL(例えば屈折レンズシステム)とにより構成されている。ここで示しているように、この装置は透過タイプ(すなわち透過マスクを有する)である。しかし、一般的には、例えば反射マスクを有する反射タイプのものも可能である。あるいは、本装置は、上記に関連するタイプであるプログラマブルミラーアレイといったような、他の種類のパターニング手段も使用可能である。
1. ステップモードにおいて、マスクテーブルMTは基本的に静止状態に保たれている。そして、マスクの像全体が1回の作動(すなわち1回の「フラッシュ」)で目標部分Cに投影される。次に基板テーブルWTがx方向および/あるいはy方向にシフトされ、異なる目標部分CがビームPBにより照射され得る。
2. スキャンモードにおいて、基本的に同一シナリオが適用されるが、但し、ここでは、所定の目標部分Cは1回の「フラッシュ」では露光されない。代わって、マスクテーブルMTが、速度vにて所定方向(いわゆる「走査方向」、例えばy方向)に運動可能であり、それによってビームPBがマスクの像を走査する。これと同時に、基板テーブルWTが速度V=Mvで、同一方向あるいは反対方向に運動する。ここで、MはレンズPLの倍率(一般的にM=1/4あるいは1/5)である。このように、解像度を妥協することなく、比較的大きな目標部分Cを露光することが可能となる。
という特性を有することから、φ(k)は常に奇数成分およびおそらく小さい(しかし関連のない)偶数成分を含むことを示している。
となり、強度はゼロである。
本発明の第二実施形態ではファイバーアレイを使用して光を瞳面から検出器アレイに導くが、その他は第一実施形態と同様であり、同様の方法で使用可能である。
本発明の第三実施形態は、検出分岐の構成を除き第一実施形態と同様であり、これを図31に示している。
本発明の実施形態において使用され得る次数結合プリズムを図32および図33において示している。図32はプリズムを分解した形で示しており、図33は組み合わせた形状で示している。
Claims (5)
- 正の次数のセットと負の次数のその対応するセットとを入射面を通して受け取り、かつ、結合した次数のセットを前記入射面に垂直な出射面を通して出力する次数結合プリズムであって、
前記入射面に垂直であり、かつ前記出射面に対して45°であるビーム分割面で結合された第1ハーフおよび第2ハーフと、
前記出射面に対向する当該プリズムの前記第1ハーフのさらなる面に隣接して設けられた1/4波長板およびミラーと、
を備えることを特徴とする次数結合プリズム。 - 当該プリズムは、その2つのサイドにおいて等しい光路長を提供することを特徴とする請求項1に記載の次数結合プリズム。
- 当該プリズムの基本形状は、前記入射面は矩形面であり前記出射面は三角形面である三角プリズムであることを特徴とする請求項1または2に記載の次数結合プリズム。
- 前記入射面を通って前記第1ハーフに入射した前記正の次数のセットは、前記第1ハーフの側面で前記ビーム分割面に向かって全反射し、前記ビーム分割面により前記1/4波長板および前記ミラーに向かって反射され、前記ミラーにより反射されて前記ビーム分割面に戻り、前記出射面から出射されることを特徴とする請求項1から3のいずれかに記載の次数結合プリズム。
- 前記入射面を通って前記第2ハーフに入射した前記負の次数のセットは、前記第2ハーフの側面で前記ビーム分割面に向かって全反射し、前記ビーム分割面により前記出射面に反射されることを特徴とする請求項1から4のいずれかに記載の次数結合プリズム。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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EP02254057 | 2002-06-11 |
Related Parent Applications (1)
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JP2003196130A Division JP4091486B2 (ja) | 2002-06-11 | 2003-06-09 | リソグラフィ装置、およびデバイス製造方法 |
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JP2008022015A true JP2008022015A (ja) | 2008-01-31 |
JP4604069B2 JP4604069B2 (ja) | 2010-12-22 |
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JP2003196130A Expired - Fee Related JP4091486B2 (ja) | 2002-06-11 | 2003-06-09 | リソグラフィ装置、およびデバイス製造方法 |
JP2007185484A Expired - Lifetime JP4604069B2 (ja) | 2002-06-11 | 2007-07-17 | プリズム |
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JP2003196130A Expired - Fee Related JP4091486B2 (ja) | 2002-06-11 | 2003-06-09 | リソグラフィ装置、およびデバイス製造方法 |
Country Status (7)
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US (3) | US6961116B2 (ja) |
JP (2) | JP4091486B2 (ja) |
KR (1) | KR100547437B1 (ja) |
CN (1) | CN1296774C (ja) |
DE (1) | DE60319462T2 (ja) |
SG (1) | SG131761A1 (ja) |
TW (1) | TWI298824B (ja) |
Cited By (3)
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JP2012060120A (ja) * | 2010-09-08 | 2012-03-22 | Asml Netherlands Bv | 自己参照干渉計、アライメントシステムおよびリソグラフィ装置 |
JP2012169617A (ja) * | 2011-02-11 | 2012-09-06 | Asml Netherlands Bv | 検査装置および方法、リソグラフィ装置、リソグラフィ処理セル、およびデバイス製造方法 |
JP2017508183A (ja) * | 2014-02-25 | 2017-03-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | ビーム分配光学デバイス、このタイプのビーム分配光学デバイスを含む照明光学ユニット、このタイプの照明光学ユニットを含む光学系、及びこのタイプの光学系を含む投影照明装置 |
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JP2012060120A (ja) * | 2010-09-08 | 2012-03-22 | Asml Netherlands Bv | 自己参照干渉計、アライメントシステムおよびリソグラフィ装置 |
JP2012169617A (ja) * | 2011-02-11 | 2012-09-06 | Asml Netherlands Bv | 検査装置および方法、リソグラフィ装置、リソグラフィ処理セル、およびデバイス製造方法 |
JP2017508183A (ja) * | 2014-02-25 | 2017-03-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | ビーム分配光学デバイス、このタイプのビーム分配光学デバイスを含む照明光学ユニット、このタイプの照明光学ユニットを含む光学系、及びこのタイプの光学系を含む投影照明装置 |
US10061203B2 (en) | 2014-02-25 | 2018-08-28 | Carl Zeiss Smt Gmbh | Beam distributing optical device and associated unit, system and apparatus |
Also Published As
Publication number | Publication date |
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JP2005268237A (ja) | 2005-09-29 |
CN1477448A (zh) | 2004-02-25 |
SG131761A1 (en) | 2007-05-28 |
DE60319462T2 (de) | 2009-03-12 |
US7564534B2 (en) | 2009-07-21 |
KR20030095331A (ko) | 2003-12-18 |
US20040033426A1 (en) | 2004-02-19 |
JP4091486B2 (ja) | 2008-05-28 |
US20080088956A1 (en) | 2008-04-17 |
US20060007446A1 (en) | 2006-01-12 |
DE60319462D1 (de) | 2008-04-17 |
US6961116B2 (en) | 2005-11-01 |
TW200403541A (en) | 2004-03-01 |
TWI298824B (en) | 2008-07-11 |
KR100547437B1 (ko) | 2006-01-31 |
CN1296774C (zh) | 2007-01-24 |
JP4604069B2 (ja) | 2010-12-22 |
US7319506B2 (en) | 2008-01-15 |
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