JP2007536725A5 - - Google Patents

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JP2007536725A5
JP2007536725A5 JP2007510978A JP2007510978A JP2007536725A5 JP 2007536725 A5 JP2007536725 A5 JP 2007536725A5 JP 2007510978 A JP2007510978 A JP 2007510978A JP 2007510978 A JP2007510978 A JP 2007510978A JP 2007536725 A5 JP2007536725 A5 JP 2007536725A5
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JP2007510978A 2004-04-28 2005-04-27 縦構造半導体装置 Expired - Fee Related JP5336075B2 (ja)

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US56632204P 2004-04-28 2004-04-28
US60/566,322 2004-04-28
PCT/US2005/014634 WO2005104780A2 (en) 2004-04-28 2005-04-27 Vertical structure semiconductor devices

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JP2007536725A JP2007536725A (ja) 2007-12-13
JP2007536725A5 true JP2007536725A5 (cg-RX-API-DMAC10.html) 2013-03-14
JP5336075B2 JP5336075B2 (ja) 2013-11-06

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US (1) US7465592B2 (cg-RX-API-DMAC10.html)
EP (1) EP1749308A4 (cg-RX-API-DMAC10.html)
JP (1) JP5336075B2 (cg-RX-API-DMAC10.html)
KR (2) KR101254539B1 (cg-RX-API-DMAC10.html)
CN (2) CN101901858B (cg-RX-API-DMAC10.html)
TW (1) TWI385816B (cg-RX-API-DMAC10.html)
WO (1) WO2005104780A2 (cg-RX-API-DMAC10.html)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142523B2 (ja) * 2003-06-04 2013-02-13 チェオル ユー，ミュング 縦型構造複合半導体装置
US8309377B2 (en) 2004-04-07 2012-11-13 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting devices
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
TWI433343B (zh) * 2004-06-22 2014-04-01 維帝克股份有限公司 具有改良光輸出的垂直構造半導體裝置
TWI389334B (zh) * 2004-11-15 2013-03-11 維帝克股份有限公司 製造及分離半導體裝置之方法
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
US8802465B2 (en) * 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP4189386B2 (ja) * 2005-01-27 2008-12-03 ローム株式会社 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法
KR101166922B1 (ko) * 2005-05-27 2012-07-19 엘지이노텍 주식회사 발광 다이오드의 제조 방법
JP2007158132A (ja) * 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
WO2007001144A1 (en) * 2005-06-27 2007-01-04 Lg Chem, Ltd. Method for preparing light emitting diode device having heat dissipation rate enhancement
KR100653848B1 (ko) * 2005-09-13 2006-12-05 (주)한비젼 3차원 적층형 이미지 센서 및 그의 제조방법
WO2007032421A1 (en) * 2005-09-13 2007-03-22 Showa Denko K.K. Nitride semiconductor light emitting device and production thereof
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
US8778780B1 (en) * 2005-10-13 2014-07-15 SemiLEDs Optoelectronics Co., Ltd. Method for defining semiconductor devices
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
CN100359636C (zh) * 2005-11-04 2008-01-02 南京大学 制备自支撑氮化镓衬底的激光剥离的方法
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
KR100721147B1 (ko) * 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
KR100780176B1 (ko) * 2005-11-25 2007-11-27 삼성전기주식회사 측면 방출 발광다이오드 패키지
JP5270088B2 (ja) 2005-12-15 2013-08-21 エルジー エレクトロニクス インコーポレイティド 垂直型発光素子及びその製造方法
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
EP1821347B1 (en) * 2006-02-16 2018-01-03 LG Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
EP2112699B1 (de) * 2006-02-23 2020-05-06 ALLOS Semiconductors GmbH Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
US7696523B2 (en) * 2006-03-14 2010-04-13 Lg Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US7593204B1 (en) * 2006-06-06 2009-09-22 Rf Micro Devices, Inc. On-chip ESD protection circuit for radio frequency (RF) integrated circuits
CN101485000B (zh) * 2006-06-23 2012-01-11 Lg电子株式会社 具有垂直拓扑的发光二极管及其制造方法
TWI298513B (en) * 2006-07-03 2008-07-01 Au Optronics Corp Method for forming an array substrate
US7915624B2 (en) 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
JP2008053685A (ja) * 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
KR100856089B1 (ko) * 2006-08-23 2008-09-02 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US20080054248A1 (en) * 2006-09-06 2008-03-06 Chua Christopher L Variable period variable composition supperlattice and devices including same
TW200822788A (en) * 2006-11-09 2008-05-16 Univ Nat Central Method of using laser in fabricating GaN device
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
TW200834969A (en) * 2007-02-13 2008-08-16 Epistar Corp Light-emitting diode and method for manufacturing the same
US7759146B2 (en) * 2007-05-04 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Method of making high efficiency UV VLED on metal substrate
US8026517B2 (en) * 2007-05-10 2011-09-27 Industrial Technology Research Institute Semiconductor structures
KR101381985B1 (ko) * 2007-08-10 2014-04-10 서울바이오시스 주식회사 수직형 발광소자 제조 방법
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
JP2009099675A (ja) * 2007-10-15 2009-05-07 Showa Denko Kk 発光ダイオードの製造方法及び発光ダイオード、並びにランプ
KR101449005B1 (ko) * 2007-11-26 2014-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US7842939B2 (en) 2008-02-25 2010-11-30 Lightwave Photonics, Inc. Current-injecting/tunneling light-emitting device and method
US7881030B1 (en) 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Enhancement-mode field effect transistor based electrostatic discharge protection circuit
US7881029B1 (en) 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Depletion-mode field effect transistor based electrostatic discharge protection circuit
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
JP5057398B2 (ja) 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
EP2316138A1 (en) * 2008-08-19 2011-05-04 Lattice Power (Jiangxi) Corporation Method for fabricating semiconductor light-emitting device with double-sided passivation
JP5237763B2 (ja) 2008-11-10 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
US8211781B2 (en) * 2008-11-10 2012-07-03 Stanley Electric Co., Ltd. Semiconductor manufacturing method
TWI389347B (zh) * 2008-11-13 2013-03-11 晶元光電股份有限公司 光電元件及其製作方法
KR100974776B1 (ko) 2009-02-10 2010-08-06 엘지이노텍 주식회사 발광 소자
EP2415086B1 (de) * 2009-04-03 2019-02-27 OSRAM Opto Semiconductors GmbH Verfahren zur herstellung eines optoelektronischen bauelements, optoelektronisches bauelement und bauelementanordnung mit mehreren optoelektronischen bauelementen
TW201112440A (en) * 2009-09-29 2011-04-01 Ubilux Optoelectronics Corp Manufacturing method of vertical light emitting diode
KR20110062128A (ko) * 2009-12-02 2011-06-10 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
JP5423390B2 (ja) * 2009-12-26 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
KR20130007557A (ko) 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
TWI449210B (zh) * 2010-06-01 2014-08-11 Huga Optotech Inc 發光元件
US8322022B1 (en) 2010-06-28 2012-12-04 Western Digital (Fremont), Llc Method for providing an energy assisted magnetic recording head in a wafer packaging configuration
JP5735245B2 (ja) * 2010-09-28 2015-06-17 スタンレー電気株式会社 光半導体素子、発光ダイオード、およびそれらの製造方法
TWI416723B (zh) * 2010-12-27 2013-11-21 Ind Tech Res Inst 氮化物半導體結構及其製造方法
WO2012114513A1 (ja) * 2011-02-25 2012-08-30 学校法人名城大学 半導体装置の製造方法
US9324905B2 (en) 2011-03-15 2016-04-26 Micron Technology, Inc. Solid state optoelectronic device with preformed metal support substrate
DE102011015725B4 (de) * 2011-03-31 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Vereinzeln eines Bauelementverbunds
CN102751403A (zh) * 2011-04-20 2012-10-24 武汉迪源光电科技有限公司 一种发光二极管的外延结构
TWI512807B (zh) * 2011-06-09 2015-12-11 晶元光電股份有限公司 半導體元件結構與其分離方法
KR101350812B1 (ko) * 2011-07-25 2014-01-13 주식회사 칩테크놀러지 반도체 발광 다이오드 및 그의 제조 방법
CN102903800B (zh) * 2011-07-28 2015-01-14 上海博恩世通光电股份有限公司 N型导电导热超晶格dbr垂直式蓝光led芯片及其制作方法
CN102956575A (zh) * 2011-08-24 2013-03-06 国碁电子(中山)有限公司 封装结构及制造方法
CN103117334B (zh) * 2011-11-17 2015-05-06 山东浪潮华光光电子股份有限公司 一种垂直结构GaN基发光二极管芯片及其制作方法
EP2600389B1 (en) * 2011-11-29 2020-01-15 IMEC vzw Method for bonding semiconductor substrates
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) * 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US20140008660A1 (en) 2012-03-14 2014-01-09 Lightwave Photonics, Inc. Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
CN102916100B (zh) * 2012-11-08 2015-04-08 安徽三安光电有限公司 发光二极管及其制作方法
US20140170792A1 (en) * 2012-12-18 2014-06-19 Nthdegree Technologies Worldwide Inc. Forming thin film vertical light emitting diodes
KR101878748B1 (ko) 2012-12-20 2018-08-17 삼성전자주식회사 그래핀의 전사 방법 및 이를 이용한 소자의 제조 방법
CN103078017A (zh) * 2012-12-26 2013-05-01 光达光电设备科技（嘉兴）有限公司 Led外延结构及其制备方法
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
CN103337570A (zh) * 2013-06-07 2013-10-02 合肥彩虹蓝光科技有限公司 改善4 inch GaN基外延片内均匀性和波长集中度的方法
CN104465897B (zh) * 2013-09-25 2017-08-15 展晶科技(深圳)有限公司 发光二极管晶粒的制造方法
CN104576857B (zh) * 2013-10-15 2017-07-04 上海工程技术大学 一种高反射层倒装led芯片结构及其制作方法
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
CN104064639A (zh) * 2014-07-04 2014-09-24 映瑞光电科技(上海)有限公司 垂直型led结构及其制作方法
US10615222B2 (en) * 2014-08-21 2020-04-07 The University Of Hong Kong Flexible GAN light-emitting diodes
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
CN104300053B (zh) * 2014-10-11 2017-09-19 华芯半导体科技有限公司 一种ito结构的led芯片结构及其制备方法
CN104217929A (zh) * 2014-10-11 2014-12-17 王金 一种外延片及其加工方法
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
KR102342718B1 (ko) * 2015-04-27 2021-12-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 적색 발광소자 및 조명장치
US10554017B2 (en) 2015-05-19 2020-02-04 Yale University Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
CN105070653B (zh) * 2015-08-18 2017-11-07 湘能华磊光电股份有限公司 一种增强器件抗静电能力的led外延生长方法
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
CN105762246B (zh) * 2016-04-25 2017-11-28 厦门乾照光电股份有限公司 一种垂直结构发光二极管及其制作方法
WO2017199110A1 (en) * 2016-05-17 2017-11-23 Rg Innovations Pte Ltd Microelectronic sensor for biometric authentication
EP3464689B1 (en) 2016-05-26 2025-09-17 Robbie Jorgenson Group iiia nitride growth system and method
KR102588170B1 (ko) 2016-11-16 2023-10-13 삼성전자주식회사 다층 구조의 반사막을 구비한 반도체 발광 소자
JP6892909B2 (ja) * 2017-11-16 2021-06-23 ローム株式会社 発光素子および発光素子パッケージ
KR102563570B1 (ko) 2018-10-24 2023-08-04 삼성전자주식회사 반도체 레이저 장치
CN110265864B (zh) * 2019-07-08 2020-06-19 厦门大学 一种GaN基垂直腔面发射激光器的制备方法
CN110491979B (zh) * 2019-09-23 2024-09-06 深圳市思坦科技有限公司 Led结构的制备方法及led结构
CN114787964A (zh) 2019-10-31 2022-07-22 耶鲁大学 多孔iii族氮化物以及其使用和制造方法
CN110993750B (zh) * 2019-12-20 2021-04-09 深圳第三代半导体研究院 垂直型发光二极管及其制造方法
JP7701319B2 (ja) * 2022-08-10 2025-07-01 信越半導体株式会社 マイクロｌｅｄ用接合型ウェーハの製造方法
CN119767887B (zh) * 2025-03-05 2025-05-09 微玖(苏州)光电科技有限公司 一种具有ITO缓冲层的Micro LED台面及其刻蚀均匀性制备方法

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
US5331180A (en) 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
JP3259811B2 (ja) * 1995-06-15 2002-02-25 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JPH0964477A (ja) 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JPH10177974A (ja) * 1996-12-18 1998-06-30 Nippon Steel Corp ヘテロエピタキシャルウェハ上のデバイスチップ製造方法
JPH10254370A (ja) 1997-03-10 1998-09-25 Canon Inc 表示パネル及びそれを用いた投射型表示装置
EP0859366A1 (en) * 1997-02-12 1998-08-19 STMicroelectronics S.r.l. Associative memory device with optimized occupation, particularly for the recognition of words
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP4352473B2 (ja) 1998-06-26 2009-10-28 ソニー株式会社 半導体装置の製造方法
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6713789B1 (en) 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US7071557B2 (en) 1999-09-01 2006-07-04 Micron Technology, Inc. Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same
JP4060511B2 (ja) * 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP2001319896A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法
US6495894B2 (en) * 2000-05-22 2002-12-17 Ngk Insulators, Ltd. Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
JP4131618B2 (ja) 2000-05-22 2008-08-13 日本碍子株式会社 フォトニックデバイス用基板の製造方法
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3882539B2 (ja) 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
JP2002141611A (ja) 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd 半導体発光素子およびその製造方法
US6518198B1 (en) 2000-08-31 2003-02-11 Micron Technology, Inc. Electroless deposition of doped noble metals and noble metal alloys
JP2002176226A (ja) 2000-09-22 2002-06-21 Toshiba Corp 光素子およびその製造方法
US6690042B2 (en) 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
US6653662B2 (en) * 2000-11-01 2003-11-25 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
US6649494B2 (en) 2001-01-29 2003-11-18 Matsushita Electric Industrial Co., Ltd. Manufacturing method of compound semiconductor wafer
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US6864158B2 (en) 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP4148664B2 (ja) 2001-02-02 2008-09-10 三洋電機株式会社 窒化物系半導体レーザ素子およびその形成方法
US6445007B1 (en) * 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
US6765232B2 (en) 2001-03-27 2004-07-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP3705142B2 (ja) 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
US6498113B1 (en) 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
US6787435B2 (en) 2001-07-05 2004-09-07 Gelcore Llc GaN LED with solderable backside metal
US20030013219A1 (en) * 2001-07-13 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing electro-optic structures
US6656756B2 (en) 2001-08-24 2003-12-02 Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. Technique for a surface-emitting laser diode with a metal reflector
JP2003068654A (ja) 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP2003086898A (ja) * 2001-09-07 2003-03-20 Nec Corp 窒化ガリウム系半導体レーザ
US6744072B2 (en) * 2001-10-02 2004-06-01 Xerox Corporation Substrates having increased thermal conductivity for semiconductor structures
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6617261B2 (en) 2001-12-18 2003-09-09 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US6455340B1 (en) 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6943379B2 (en) 2002-04-04 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting diode
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6818532B2 (en) 2002-04-09 2004-11-16 Oriol, Inc. Method of etching substrates
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
CN1187643C (zh) * 2002-05-28 2005-02-02 友达光电股份有限公司 液晶显示装置的有源阵列基板及其制造方法
US20030222263A1 (en) * 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US6744196B1 (en) 2002-12-11 2004-06-01 Oriol, Inc. Thin film LED
JP5142523B2 (ja) 2003-06-04 2013-02-13 チェオル ユー，ミュング 縦型構造複合半導体装置
JP2005005421A (ja) 2003-06-11 2005-01-06 Sharp Corp 酸化物半導体発光素子
US7122827B2 (en) * 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
JP4368225B2 (ja) * 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
JP2005268642A (ja) * 2004-03-19 2005-09-29 Uni Light Technology Inc 金属ベースを有する発光ダイオードの形成方法
TWI433343B (zh) 2004-06-22 2014-04-01 維帝克股份有限公司 具有改良光輸出的垂直構造半導體裝置
TWI389334B (zh) 2004-11-15 2013-03-11 維帝克股份有限公司 製造及分離半導體裝置之方法
US7829909B2 (en) 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof

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