JP5735245B2 - 光半導体素子、発光ダイオード、およびそれらの製造方法 - Google Patents
光半導体素子、発光ダイオード、およびそれらの製造方法 Download PDFInfo
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- JP5735245B2 JP5735245B2 JP2010217583A JP2010217583A JP5735245B2 JP 5735245 B2 JP5735245 B2 JP 5735245B2 JP 2010217583 A JP2010217583 A JP 2010217583A JP 2010217583 A JP2010217583 A JP 2010217583A JP 5735245 B2 JP5735245 B2 JP 5735245B2
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- optical semiconductor
- buffer layer
- semiconductor element
- metal support
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- 239000004065 semiconductor Substances 0.000 title claims description 113
- 230000003287 optical effect Effects 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 27
- 238000007747 plating Methods 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 17
- 239000012790 adhesive layer Substances 0.000 claims 1
- 239000010931 gold Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 230000005496 eutectics Effects 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910003294 NiMo Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
成長基板を用意する。本実施例では、MOCVD法により窒化物系半導体のAlxInyGazN(0≦x≦1,0≦y≦1,0≦z≦1,x+y+z=1)からなる半導体膜を形成することができるC面サファイア基板10を用いた。半導体層20を構成する各層は、MOCVD法によりウルツ鉱型結晶構造のC軸方向に沿ってサファイア基板10上に積層される。なお、成長基板は、Si(シリコン)やSiC(炭化シリコン)などを用いても構わない。
次に、電極層31上に密着層32および緩衝層33を形成する。本実施例では、結晶質の密着層32および非晶質の緩衝層33としてNiPを用いることとした。NiPは、P組成比が0%より大きく3%未満であれば結晶質となり、P組成比が8%より大きく13%未満であれば非晶質となる特性を有する。NiPからなる密着層および緩衝層は、無電解メッキ処理法で形成することができる。無電解メッキ処理法により、半導体を含む導体上にNiPを成長させることが可能である。具体的には、まず、電極層31の表面を、汎用の中性洗剤等を用いて脱脂洗浄し、希硫酸などの酸を用いて電極層31上の自然酸化膜を除去する。次に、Ni源である硫酸ニッケルもしくは塩化ニッケル溶液に、P源である次亜リン酸塩等を加えた第1のメッキ浴中に、サファイア基板20上に電極層31等を堆積させた積層構造体を浸漬し、電極層31上に、膜厚0.05μm程度の結晶質NiP膜を成長させて密着層32を形成する。つづき、第1のメッキ浴と同じ元素から構成され、第1のメッキ浴よりも次亜リン酸塩の濃度が高い第2のメッキ浴中に、サファイア基板20上に密着層32等を堆積させた積層構造体を浸漬し、密着層32上に、膜厚50μm程度の非晶質NiP膜を成長させて緩衝層33を形成する。密着層の膜厚は0.001〜10μm程度が好ましく、緩衝層の膜厚は密着層の膜厚よりも厚く、かつ0.01〜50μm程度が好ましい。膜厚は、メッキ浴への浸漬時間を変えることにより制御が可能である。なお、ニッケル合金のメッキ処理を行う場合、メッキ浴には一般的に、光沢剤としてサッカリンやホルマリンが添加される。また、上記においては無電解メッキ処理法を用いたが、電解メッキ処理法を用いてもかまわない。さらに、密着層および緩衝層は、NiB,NiWまたはNiMoでもかまわない。ただし、例えば、密着層および緩衝層をNiWで構成する場合には、WがCuと反応しやすいため熱伝導率の低いCuWを形成してしまう可能性がある。そのため、光半導体素子全体の放熱性が低減してしまう可能性がある。その他、熱伝導性やCu支持体との密着性、製造工程における信頼性および効率性等を勘案すると、密着層および緩衝層はNiPが最も好ましいと考えられる。
次に、緩衝層33上に金属支持体30を形成する。金属支持体30は、半導体層20を支持するとともに、半導体層20の発熱を効率的に放熱する役割を担う。本実施例では、金属支持体として比較的熱伝導率の高い銅を用いることとした。銅膜からなる金属支持体30は、電解メッキ処理法で形成することができる。電解メッキ処理法により、半導体を含む導体上に銅を成長させることが可能である。具体的には、シアン化銅もしくは硫酸銅ベースのメッキ浴中にサファイア基板10上に密着層32および緩衝層33等を堆積させた積層構造体を浸漬し、対向電極に含リン銅を用いて、緩衝層33上に膜厚150μm程度の銅膜を成長させて金属支持体30を形成する。電流密度は3〜8A/dm2で実施することが好ましく、4〜6A/dm2で実施することが銅膜の平坦性向上のためにはより好ましい。また、メッキ浴には有機物ベースの平滑剤・光沢剤を添加してもよい。金属支持体の膜厚は、支持体としての強度担保のため50μm以上が好ましく、後工程における半導体素子分割の観点から200μm以下が好ましい。つづき、本実施例では、酸化防止膜としてNi2μm、Au0.3μmを銅膜表面に成膜した。
次に、サファイア基板10を半導体層20から剥離する。サファイア基板10の剥離には、研削・研磨、エッチング(反応性イオンエッチング:RIE)およびLLO(レーザリフトオフ)等の公知の手法を用いることができる。本実施例では、エキシマレーザ(波長226nm)によるLLO法を用いることとした。LLO法においては、照射されたレーザがサファイア基板10上に形成されているGaN層を金属GaとN2ガスに分解する。このため、n型GaN層21又は下地GaN層内で上記分解が起り、サファイア基板10を剥離した面には、n型GaN層21又は下地GaN層が表出する。なお、成長基板にSiやSiCを用いた場合には、化学的溶解により成長基板を除去することも可能である。
次に、サファイア基板10を剥離することによって表出したn型GaN層21の表面に例えばリフトオフ加工により電極パッド34を形成する。具体的にはn型GaN層21上に目的とする電極パターンとは逆パターンのレジストマスクを形成し、その上に金属膜を電子ビーム蒸着法により堆積させる。その後、不用部分の金属、レジストマスクを共に除去し、所望のパターンを有する電極パッド34を形成する。本実施例では、電極パッド34として、n型GaN層21側からTi(10Å)/Pt(1000Å)/Au(15000Å)の積層電極を用いることとした。尚、n型GaN層21の表面のほぼ全域にITO(酸化インジウムスズ)からなる透光性導電膜を形成した後、このITO膜上に電極パッドを形成してもよい。
次に、チップ状態の光半導体素子をパッケージ化し、挿入実装型LEDを完成させる。チップ化された光半導体素子40を一対のステム50の一方50aにAuSnはんだ60を介して固定する。具体的には、Au組成比が約80wt%のAuSnはんだ60を光半導体素子40の金属支持体30、および/またはステム50aの表面に塗布し、電気炉で315℃90秒間(昇温速度105℃/秒、降温速度10.5℃/秒)加熱して、共晶を行った。AuSnはんだの共晶温度は、後工程のLED実装時におけるはんだ付け温度(約250℃)よりも十分に高いことが望ましく、Au組成比は80wt%以上100wt%未満が望ましい。
20 半導体積層、
30 金属支持体、
32 密着層、
33 緩衝層、
40 光半導体素子、
60 はんだ、
70 ボンディングワイヤ、
80 透光性樹脂、
100 発光ダイオード。
Claims (4)
- 金属支持体と、
前記金属支持体上に配置される非晶質の緩衝層と、
前記緩衝層上に配置され、該緩衝層と同じ元素で構成された結晶質の密着層と、
前記密着層上方に配置され、pn接合を有する光半導体積層と、
を含み、
前記緩衝層および前記密着層はNiPにより構成され、前記金属支持体はCuにより構成され、前記光半導体積層は窒化物系半導体により構成される光半導体素子。 - 前記緩衝層の膜厚は前記密着層の膜厚よりも厚い請求項1記載の光半導体素子。
- 請求項1または2記載の光半導体素子と、前記光半導体素子を固定する基台と、前記基台上の前記光半導体素子を封止する透光性樹脂体と、を具備する発光ダイオードであって、
前記光半導体素子は、前記基台上に、Au組成比80wt%以上100wt%未満のAuSnはんだで固定される発光ダイオード。 - 工程a)成長用基板上に、pn接合を有する半導体積層膜を成長させる工程と、
工程b)前記半導体積層膜上に、メッキ処理法により、結晶質の密着層と、前記密着層と同じ元素で構成される非晶質の緩衝層と、を形成する工程と、
工程c)前記密着層および前記緩衝層の上方に、メッキ処理法により、金属支持体を形成する工程と、
工程d)前記成長用基板を前記半導体積層膜から除去する工程と、
を含み、
前記工程b)において、前記密着層および前記緩衝層はNiPを含み、前記緩衝層を形成するためのメッキ浴は、前記密着層を形成するためのメッキ浴よりもPの濃度が高く、
前記工程c)において、前記金属支持体はCuを含み、メッキ処理に用いる対向電極は含リン銅を含む、
光半導体素子の製造方法。
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