JP2007173415A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】半導体基板31の所定の位置に設けられた複数の電極層33と、前記電極層33の所定領域を選択的に露出して前記半導体基板31上に形成された有機絶縁膜34と、前記電極層33の所定領域に形成された複数の外部接続用突起電極39と、を具備し、前記外部接続用突起電極39の周囲近傍の有機絶縁膜34の厚さが、前記外部接続用突起電極39間の有機絶縁膜34の厚さよりも大なる厚さを有することを特徴とする半導体装置により上記課題は解決される。
【選択図】図10
Description
[本発明の第1の実施の形態]
本発明の第1の実施の形態にかかる半導体装置の製造方法に於ける、めっき法による半田バンプ形成工程を図8及び図9に示す。
[本発明の第2の実施の形態]
本発明の第2の実施の形態にかかる半導体装置の製造方法に於ける、めっき法による半田バンプ形成工程を図11乃至図13に示す。
図15(c)は、本発明の第2の実施の形態のバンプ構造からバンプを除去した状態の像であり、図15(d)は、図15(c)の断面構造である。図15(c)を参照すると、半田バンプ49が設けられていた箇所の周囲に、順に、バンプ近傍有機絶縁膜44−1、第1被エッチング有機絶縁膜44−2、第2被エッチング有機絶縁膜44−3が形成されていることが観察される。
(付記1) 半導体基板の所定の位置に設けられた複数の電極層と、
前記電極層の所定領域を選択的に露出して前記半導体基板上に形成された有機絶縁膜と、
前記電極層の所定領域に形成された複数の外部接続用突起電極と、を具備し、
前記外部接続用突起電極の周囲近傍の有機絶縁膜の厚さが、前記外部接続用突起電極間の有機絶縁膜の厚さよりも大なる厚さを有することを特徴とする半導体装置。
(付記2) 付記1記載の半導体装置であって、
前記外部接続用突起電極間の有機絶縁膜は、第1の領域と、前記第1の領域よりも外側に設けられた第2の領域から構成され、
前記第1の領域の厚さは、前記第2の領域の厚さよりも小さいことを特徴とする半導体装置。
(付記3) 付記1又は2記載の半導体装置であって、
前記外部接続用突起電極間の有機絶縁膜の厚さは、前記外部接続用突起電極の周囲近傍の有機絶縁膜の厚さよりも約50乃至1000nm小さいことを特徴とする半導体装置。
(付記4) 付記1乃至3いずれか一項記載の半導体装置であって
前記外部接続用突起電極間の有機絶縁膜の表面粗さは、前記外部接続用突起電極の周囲近傍の有機絶縁膜の表面粗さの約5倍以上であることを特徴とする半導体装置。
(付記5) 付記4記載の半導体装置であって、
前記外部接続用突起電極間の有機絶縁膜の表面粗さは、約20nm以上であることを特徴とする半導体装置。
(付記6) 付記1乃至5いずれか一項記載の半導体装置であって、
前記外部接続用突起電極は金属層を介して前記電極層に接続されており、
前記金属層を構成する金属であって前記有機絶縁性保護膜にも含まれている金属の量は、前記外部接続用突起電極の周囲近傍の有機絶縁膜よりも、前記外部接続用突起電極間の有機絶縁膜の方が、少ないことを特徴とする半導体装置。
(付記7) 付記6記載の半導体装置であって、
前記外部接続用突起電極間の有機絶縁膜における前記金属は、0.1atm%以下であることを特徴とする半導体装置。
(付記8) 半導体基板の所定の位置に設けられた電極層と、前記電極層の略中央が露出するように、隣接する前記電極層間を連続的に覆う有機絶縁性保護膜と、前記電極層に接続された外部接続用突起電極と、を備えた半導体装置の製造方法であって、
前記電極層に前記外部接続用突起電極を形成した後に、ドライエッチング処理により前記有機保護膜の表面をエッチングすることを特徴とする半導体装置の製造方法。
(付記9) 付記8記載の半導体装置の製造方法であって、
前記ドライエッチング処理は高周波(RF)プラズマエッチングであることを特徴とする半導体装置の製造方法。
(付記10) 付記8又は9記載の半導体装置の製造方法であって、
前記ドライエッチング処理に用いるガスは、酸素ガス、四フッ化炭素ガス又はトリフルオロメタンガスの混合ガスであることを特徴とする半導体装置の製造方法。
(付記11) 付記8乃至10いずれか一項記載の半導体装置の製造方法であって、
前記電極層に前記外部接続用突起電極を形成する前に、前記有機絶縁性保護膜の表面を改質することを特徴とする半導体装置の製造方法。
(付記12) 付記11記載の半導体装置の製造方法であって、
前記有機絶縁性保護膜の前記表面を、表面改質ドライエッチング処理によって改質することを特徴する半導体装置の製造方法。
(付記13) 付記12記載の半導体装置の製造方法であって、
前記表面改質ドライエッチング処理は高周波(RF)プラズマエッチングであることを特徴とする半導体装置の製造方法。
(付記14) 付記12又は13いずれか一項記載の半導体装置の製造方法であって、
前記表面改質ドライエッチング処理に用いるガスは、窒素ガス又はアルゴンガスであることを特徴とする半導体装置の製造方法。
(付記15) 付記12乃至14いずれか一項記載の半導体装置の製造方法であって、
前記表面改質ドライエッチング処理の前に、前記外部接続用突起電極を構成する材料から成る層を前記電極層に設け、
前記表面改質ドライエッチング処理を、前記有機絶縁性保護膜の表面のうち、前記外部接続用突起電極を構成する材料から成る前記層に覆われておらず露出している部分に施して、改質することを特徴とする半導体装置の製造方法。
2、32、42 無機絶縁膜
3、33、43 電極層
4、34、44 有機絶縁膜
5、35、45 給電層
7、37、47 バリアメタル
9、39 バンプ
34−1、44−1 バンプ近傍絶縁性有機絶縁膜
34−2 被エッチング有機絶縁膜
44−2 第1被エッチング絶縁性有機絶縁膜
44−3 第2被エッチング絶縁性有機絶縁膜
Claims (10)
- 半導体基板の所定の位置に設けられた複数の電極層と、
前記電極層の所定領域を選択的に露出して前記半導体基板上に形成された有機絶縁膜と、
前記電極層の所定領域に形成された複数の外部接続用突起電極と、を具備し、
前記外部接続用突起電極の周囲近傍の有機絶縁膜の厚さが、前記外部接続用突起電極間の有機絶縁膜の厚さよりも大なる厚さを有することを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記外部接続用突起電極間の有機絶縁膜は、第1の領域と、前記第1の領域よりも外側に設けられた第2の領域から構成され、
前記第1の領域の厚さは、前記第2の領域の厚さよりも小さいことを特徴とする半導体装置。 - 請求項1又は2記載の半導体装置であって
前記外部接続用突起電極間の有機絶縁膜の表面粗さは、前記外部接続用突起電極の周囲近傍の有機絶縁膜の表面粗さの約5倍以上であることを特徴とする半導体装置。 - 請求項1乃至3いずれか一項記載の半導体装置であって、
前記外部接続用突起電極は金属層を介して前記電極層に接続されており、
前記金属層を構成する金属であって前記有機絶縁性保護膜にも含まれている金属の量は、前記外部接続用突起電極の周囲近傍の有機絶縁膜よりも、前記外部接続用突起電極間の有機絶縁膜の方が、少ないことを特徴とする半導体装置。 - 半導体基板の所定の位置に設けられた電極層と、前記電極層の略中央が露出するように、隣接する前記電極層間を連続的に覆う有機保護膜と、前記電極層に接続された外部接続用突起電極と、を備えた半導体装置の製造方法であって、
前記電極層に前記外部接続用突起電極を形成した後に、ドライエッチング処理により前記有機保護膜の表面をエッチングすることを特徴とする半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法であって、
前記ドライエッチング処理に用いるガスは、酸素ガス、四フッ化炭素ガス又はトリフルオロメタンガスの混合ガスであることを特徴とする半導体装置の製造方法。 - 請求項5又は6記載の半導体装置の製造方法であって、
前記電極層に前記外部接続用突起電極を形成する前に、前記有機保護膜の表面を改質することを特徴とする半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法であって、
前記有機保護膜の前記表面を、表面改質ドライエッチング処理によって改質することを特徴する半導体装置の製造方法。 - 請求項7又は8記載の半導体装置の製造方法であって、
前記表面改質ドライエッチング処理に用いるガスは、窒素ガス又はアルゴンガスであることを特徴とする半導体装置の製造方法。 - 請求項8又は9記載の半導体装置の製造方法であって、
前記表面改質ドライエッチング処理の前に、前記外部接続用突起電極を構成する材料から成る層を前記電極層に設け、
前記表面改質ドライエッチング処理を、前記有機保護膜の表面のうち、前記外部接続用突起電極を構成する材料から成る前記層に覆われておらず露出している部分に施して、改質することを特徴とする半導体装置の製造方法。
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TW095108765A TWI305021B (en) | 2005-12-20 | 2006-03-15 | Semiconductor device and manufacturing method of the same |
KR1020060030781A KR100786163B1 (ko) | 2005-12-20 | 2006-04-05 | 반도체 장치 및 그 제조 방법 |
CN2006100738675A CN1988143B (zh) | 2005-12-20 | 2006-04-06 | 半导体器件及其制造方法 |
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TW200725765A (en) | 2007-07-01 |
US20070138635A1 (en) | 2007-06-21 |
JP5118300B2 (ja) | 2013-01-16 |
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CN1988143A (zh) | 2007-06-27 |
KR100786163B1 (ko) | 2007-12-21 |
US20080293234A1 (en) | 2008-11-27 |
US8420522B2 (en) | 2013-04-16 |
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US7417326B2 (en) | 2008-08-26 |
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