TWI582930B - 積體電路裝置及封裝組件 - Google Patents
積體電路裝置及封裝組件 Download PDFInfo
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- TWI582930B TWI582930B TW099125728A TW99125728A TWI582930B TW I582930 B TWI582930 B TW I582930B TW 099125728 A TW099125728 A TW 099125728A TW 99125728 A TW99125728 A TW 99125728A TW I582930 B TWI582930 B TW I582930B
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- Prior art keywords
- layer
- bump
- copper
- bottom metal
- metal layer
- Prior art date
Links
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000010949 copper Substances 0.000 claims description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 114
- 229910052802 copper Inorganic materials 0.000 claims description 112
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 82
- 229910000679 solder Inorganic materials 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 231
- 238000000034 method Methods 0.000 description 39
- 239000010408 film Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 31
- 239000011241 protective layer Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000011135 tin Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 229920002577 polybenzoxazole Polymers 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910007637 SnAg Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011133 lead Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910016344 CuSi Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910007638 SnAgSb Inorganic materials 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910005728 SnZn Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- -1 ethoxyethoxy alcohol Chemical compound 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/0361—Physical or chemical etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/0361—Physical or chemical etching
- H01L2224/03614—Physical or chemical etching by chemical means only
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
- H01L2224/03901—Methods of manufacturing bonding areas involving a specific sequence of method steps with repetition of the same manufacturing step
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
- H01L2224/03912—Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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Description
本發明係關於積體電路製作,且特別是關於積體電路裝置內所應用之凸塊結構(bump structure)。
當今之積體電路係由如電晶體或電容之數百萬個裝置所形成。此些裝置之間起初為相分隔的,然而之後將相互地經過內部連結而形成功能性電路。內連結構通常包括如金屬導線(連接線)之橫向內連情形與如介層物(via)與接觸物(contact)等之垂直內連情形。此些內連情形逐漸地決定了當今積體電路之表現與密度的極限。於內連結構之頂部上,形成有銲墊(bond pad)並露出各晶片之表面。可透過銲墊以形成連結晶片與基板或另一晶片之電性連接情形。銲墊可用於打線接合(wire bonding)或覆晶接合(flip-chip bonding)等接合情形。
覆晶封裝技術利用了凸塊(bump)以建立介於一晶片之輸出/輸入銲墊(I/O pads)與基板或封裝物之導線架之間的電性連接關係。結構上而言,凸塊實際上包括了凸塊其本身與位於凸塊與輸出/輸入銲墊之間的所謂之凸塊底金屬層(under bump metallurgy,UBM)。凸塊底金屬層通常包括一黏著層、一阻障層與一濕潤層,並按照上述順序而設置於輸出/輸入銲墊之上。基於凸塊其本身之使用材料,則可細分為銲錫凸塊(solder bumps)、金凸塊(gold bumps)、銅柱凸塊(copper pillar bump)以及採用混合材料之凸塊。近年來已發展出了銅柱凸塊技術。於取代錫球凸塊的使用情形中,電子元件係藉由一銅柱凸塊而連結於一基板,如此可於最小之凸塊橋接可能情形下以達成了更細之間距,進而降低了電路之負載電容(capacitance load),並使得電子元件可於更高頻率下操作。
銅柱凸塊覆晶組件(Cu pillar bump flip-chip assembly)具有下述優點:(1)較佳熱/電性表現、(2)高電流承載能力、(3)對於電致變遷之較佳阻抗能力,因而具有較長的凸塊壽命、(4)可最小化模塑孔洞(molding voids),即於銅柱凸塊之間可形成有較為一致之空隙。此外,藉由使用銅柱而達成銲錫分佈的控制便可應用較為便宜之基板與消除無鉛淚珠設計。然而,銅於製造過程中具有氧化之傾向。經氧化之銅柱將導致了電子構件與基板之間的不良附著情形。如此之不良附著情形可基於高漏電流情形而導致了嚴重的可靠性問題。經氧化之銅柱亦可導致了沿著底膠與銅柱間介面之底膠破裂情形。此些破裂可能遷移至下方的低介電常數介電層或至用於連結銅柱與基板間之凸塊處。因此,便需要一側壁保護層以避免銅的氧化,但是用於製造銅柱側壁物之習知方法受到高製造成本與介面剝落等問題的困擾。目前,係採用浸潤式錫製程以於銅柱側壁上形成一錫層,然而上述技術仍存在有關於製造成本、錫與底膠間之附著情形等問題,以及於側壁上之銲錫的濕潤問題,上述問題為新世代晶片中用於精密間距封裝技術的一大挑戰。
有鑑於此,本發明提供了一種積體電路裝置及封裝組件,以解決上述問題。
依據一實施例,本發明提供了一種積體電路裝置,包括:一半導體基板;一第一凸塊底金屬層,形成於該半導體基板之上;一第二凸塊底金屬層,形成於該第一凸塊底金屬層之上,具有一側面;一導電柱,形成於該第二凸塊底金屬層之上,具有一側面與一頂面;以及一保護結構,形成於該導電柱之該側面與該第二凸塊底金屬層之該側面之上;其中該保護結構係由一非金屬材料所形成,而該導電柱係由一含銅層所形成。
依據另一實施例,本發明提供了一種積體電路裝置,包括:一半導體基板;一凸塊結構,形成於該半導體基板之上;以及一非金屬之保護結構,覆蓋至少該凸塊結構之側壁之一部;其中該凸塊結構包括形成於該半導體基板之上之一凸塊底金屬層以及形成於該凸塊底金屬層之上之一銅柱。
依據又一實施例,本發明提供了一種封裝組件,包括:一第一基板;一凸塊結構,形成於該第一基板之上,其中該凸塊結構包括形成於該第一基板之上之一凸塊底金屬層以及形成於該凸塊底金屬層之上之一銅柱;一非金屬之保護結構,覆蓋至少該凸塊結構之側壁之一部;一第二基板;以及一接合銲錫層,形成於該第二基板與該凸塊結構之間。
為讓本發明之上述目的、特徵及優點能更明顯易懂,下文特舉一較佳實施例,並配合所附的圖式,作詳細說明如下:
本發明提供了數個適用於銅柱凸塊技術之側壁保護製程之實施例,側壁保護製程中係於銅柱凸塊之側壁上形成包括至少如一介電材料層、一聚合物材料層或上述材料膜層之組合等多個非金屬材料膜層其中之一之保護結構。於下文中所採用之”銅柱凸塊(Cu pillar bump)”係指一凸塊結構包括由銅或銅合金所形成之一導電柱(一柱子或一支撐座)。銅柱凸塊可直接應用於覆晶組件之一半導體晶片之導電接墊或一重分佈層之上或應用於其他之相似應用中。
於下文中藉由對應之圖式以詳細解說本發明之範例與實施例。可能的話,於圖式與描述中採用了相同之標號以代表相同或類似之構件。於圖式中,基於清楚與方便之目的,實施例之形狀或厚度可誇大顯示。再者,圖式中各元件之部分將分別描述說明,值得注意的是,圖中未特別繪示或描述之元件可能具有不同之形態。另外,當一膜層係為位於另一膜層之上或位於一基板之上時,此膜層可能直接地位於其他膜層之上或基板之上,或者是其間從在有中間之膜層。於下文中關於”某一實施例”或”一實施例”內之參考內容表示了相關於包括至少一實施例之此實施例之一特定構件、結構或特性。因此,於不同處之”於某一實施例中”或”於一實施例中”等描述並非相關於相同之實施例。再者,於一或多個實施例中之此些特定構件、結構或特徵可依照特定形態而結合。可以理解的是下述圖式中並非依照實際比例繪製,而此些圖式僅用於配合解說之用。
在此,第1A-1F圖為一系列剖面圖,顯示了於一實施例中之一銅柱凸塊製程內的一半導體裝置之一部的製作。
請參照第1A圖,於一半導體積體電路製作中採用一半導體基板10以用於凸塊製作,而積體電路可形成於半導體基板10之內及/或其上。此半導體基板係定義為包括半導體材料之任何結構,例如是包括塊狀矽、半導體晶圓、絕緣層上覆矽基板或一矽鍺基板,但並不以上述實施情形為限。亦可採用如包括III族、IV族、與V族元素之其他半導體材料。半導體基板10可更包括如淺溝槽隔離(STI)構件或局部矽氧化(LOCOS)構件之數個隔離構件(未顯示)。此些隔離構件可定義與分隔多個微電子元件(未顯示)。可形成於半導體基板10上之此些微電子元件的範例包括電晶體(例如金氧半導體電晶體(MOS)、互補型金氧半導體電晶體(CMOS)、雙極電晶體(BJT))、高壓電晶體、高頻電晶體、p通道及/或n通道場效應電晶體(PFETs或NFETs等)、電阻、二極體、電容、電感、熔絲及其他適當之元件。可施行包括沈積、蝕刻、佈值、微影、回火及其他適當製程之多個製程以形成上述多種微電子元件。此些微電子元件係經過內部連結以形成如邏輯裝置、記憶體裝置(如靜態隨機存取記憶體,SRAM)、射頻(RF)裝置、輸入/輸出裝置、晶片上系統裝置、上述裝置之結合及其他適當形態之裝置之一積體電路裝置。
半導體基板10可更包括位於積體電路之上的層間介電層與金屬化結構。位於金屬化結構內之層間介電層包括低介電常數介電材料、未摻雜矽玻璃(USG)、氮化矽、氮氧化矽或其他常用之材料。低介電材料之介電常數(k值)可少於約3.9或少於約2.8。金屬化結構內之金屬導線可由銅或銅合金所形成。金屬化膜層的形成細節為熟悉此技藝者可以理解的。一銲墊區域(未顯示)係為形成於最頂層之層間介電層內之一頂金屬化膜層,其為導電通道的一部且具有經過如化學機械研磨之一平坦化程序處理之一露出表面,如果需要的話。用於銲墊區域之適當材料可包括如銅、鋁、鋁銅、銅合金或其他之導電材料,但並以上述材料限制其實施情形。銲墊區域係用於連結位於各別晶片內之積體電路至外部構件之一接合程序。
半導體基板10更包括形成於銲墊區域之上並露出銲墊區域之一部之一保護層(未顯示),以使得後續銅柱凸塊製程得以施行。此保護層係由擇自如未摻雜矽玻璃(USG)、氮化矽、氮氧化矽、氧化矽、及上述材料之組合之一非有機材料(non-organic material)。或者,保護層可由一聚合物層所形成,例如環氧樹脂、聚亞醯胺、苯環丁烯(BCB)、聚苯噁唑(PBO)及相似物,雖然其亦可使用其他之相對柔軟、更為有機之介電材料。
請參照第1圖,接著於基板10之上形成包括一第一凸塊底金屬層14與一第二凸塊底金屬層16之一凸塊底金屬層12。舉例來說,凸塊底金屬層12係形成於銲墊區域之露出部之上並延伸至保護層之一部上。第一凸塊底金屬層14,其亦稱為擴散阻障層或一黏著層,其係由鈦、鉭、氮化鈦、氮化鉭或相似物所形成,並可藉由如物理氣相沈積或濺鍍法等方法所形成。第一凸塊底金屬層14沈積至介於約500-2000埃之一厚度,例如為約1000埃之一厚度。形成於第一凸塊底金屬層14上之第二凸塊底金屬層16係為銅晶種層,其可藉由物理氣相沈積或濺鍍法等方式形成。第二凸塊底金屬層16可由包括銀、鉻、鎳、錫、金及其組合之銅合金所形成。第二凸塊底金屬層16沈積至約介於500-10000埃之一厚度,例如為約5000埃之厚度。於一實施例中,凸塊底金屬層12包括由鈦所形成之一第一凸塊底金屬層14以及由銅所形成之一第二凸塊底金屬層16。
接著,於凸塊底金屬層12之上形成一罩幕層18,並經過圖案化以於其內形成並露出凸塊底金屬層12之一部之一開口19,以用於銅柱凸塊的形成。罩幕層18可為一乾膜層或一阻劑膜層。開口19接著部份或完全地為具有錫濕潤性之一導電材料所填入。於一實施例中,於開口19內形成一銅層20以接觸下方之凸塊底金屬層12。於本發明中,”銅層”之描述係泛指大體包括純元素銅、包含不可避免之雜質之銅層及包括如鉭、銦、錫、鋅、錳、鉻、鈦、鍺、鍶、鉑、鎂、鋁或鋯之微量元素之銅合金之一膜層。其形成方法可包括濺鍍、印刷、電鍍、無電電鍍或常用之化學氣相沈積方法。舉例來說,可施行電化學電鍍以形成銅層20。於一實施例中,銅層20之厚度可大於25微米,於下文中銅層20亦可稱呼為具有一頂面20a與一側面20b之一銅柱20。於另一實例例中,銅層之厚度則大於40微米。舉例來說,銅層之厚度約為40-50微米,或約為40-70微米,雖然其厚度可能更厚或更薄。
請參照第1B圖,接著移除罩幕層18,以露出銅柱20之頂面20a與側面20b以及銅柱20以外之第二凸塊底金屬層16之一部。當罩幕層18為乾膜層時,可採用鹼性溶液以移除之。而當罩幕層18為阻劑膜層所形成時,則可採用丙酮、N-甲基砒喀烷酮(NMP)、二甲基亞砜(DMSO)、乙氧基乙醇(aminoethoxy ethanol)或相似物以移除之。接著如第1C圖所示,第二凸塊底金屬層16之露出部份經過蝕刻後以露出其下方位於銅凸塊20以外之第一凸塊底金屬層14之一部14a。於一實施例中,移除第二凸塊底金屬層16之步驟係為一乾蝕刻或一濕蝕刻。舉例來說,可使用採用氨基酸之一等向性濕蝕刻(通常稱之為快速蝕刻由於其處理時間較短)。因此,於銅柱20之下方,經圖案化之第二凸塊底金屬層16”便具有側面16b。此外,位於銅柱20之外,則露出了第一凸塊底金屬層14之一部14a。
請參照第1D圖,藉由如一坦覆地沈積之程序以形成一保護層22於如第1C圖所示結構之上。較精確的說,係沈積一保護層22以覆蓋銅柱20之底面20a與側面20b、經圖案化之第二凸塊底金屬層16”之側面16b以及第一凸塊底金屬層14之露出部14a。保護層22係為一非金屬材料層,例如為一介電材料層、一聚合物層,或上述膜層之組合。保護層22可為單一材料層或一多重膜層結構。保護層22之厚度約為500-1000埃。於一實施例中,保護層22係為由氮化矽、氧化矽、氮氧化矽、碳化矽、氧化矽與氮化矽之交錯膜層或上述材料之結合之所形成之一介電材料層,其可藉由下述之多個沈積技術中之任一方法所形成,包括熱氧化法、低壓化學氣相沈積(LPCVD)、大氣化學氣相沈積法(APCVD)或電漿加強型化學氣相沈積(PECVD)。於一實施例中,保護層22係為一聚合物材料層且由一聚合物所形成,例如環氧樹脂、聚亞醯胺、苯環丁烯(BCB)、聚苯噁唑(PBO)及相似物,雖然其亦可使用其他之相對柔軟、更為有機之介電材料。聚合物材料層係為柔軟的,因此具有降低位於基板之各別部份之本身應力的功能。此外,聚合物層可輕易地形成約為數十微米之一厚度。
接著,請參照第1E圖,經過蝕刻保護層22之數個部份後,留下沿著側面20b與16b與露出部14a之部份,藉以形成一側壁間隔物22a,其亦稱為一側壁保護結構22a,其中覆蓋銅柱20之頂面20a之保護層22於此步驟中被蝕刻移除。隨著微影與罩幕製程與乾蝕刻製程的演進,如反應性離子蝕刻與其他電漿蝕刻製程可完成了側壁間隔物22a的製作。
接著採用所形成之結構22a作為罩幕以蝕刻第一凸塊底金屬層14並露出下方之基板10。可使用如採用Cl2/BCl3作為蝕刻劑之標準反應離子蝕刻製程之一乾蝕刻製程,以形成一第一凸塊底金屬層14。因此,上述乾蝕刻製程圖案化了露出部14a之為側壁間隔物22a所覆蓋之一周圍表面14a”並露出了側面14b。由於周圍表面14a延伸至經圖案化之第二凸塊底金屬層16”之側面16b之外,故經圖案化之第一凸塊底金屬層14”之區域可大於經圖案化之第二凸塊底金屬層16”之區域。
所形成之凸塊結構24包括了銅柱20、位於銅柱20下方之經圖案化之第二凸塊底金屬層16”、位於經圖案化之第二凸塊底金屬層16”下方之經圖案化之第一凸塊底金屬層14”以及覆蓋側面20b與16b與周圍表面14a之側壁保護結構22a。半導體基板10接著經過切割後,利用錫球或銅凸塊而安裝於封裝基板或另一晶片上之一銲墊上而封裝至一封裝基板上或另一晶片之上。
第1F圖為一剖面圖,顯示了一實施例之一覆晶組件的剖面情形。如第1E圖所示結構經上下顛倒後使之底部黏著至另一基板100。基板100可為一封裝基板、電路板(如一印刷電路板)或其他之適當基板。凸塊結構24接觸了基板100之多個導電黏著點,例如為位於接觸銲墊及/或導電線路上之一接合銲錫層102,進而形成耦接了兩個基板10與100之一接合結構104。接合銲錫層102可為一共熔銲錫材料,其包括錫、鉛、銀、銅、鎳、鉍或其組合之合金。示範性之耦合製程包括一助熔劑應用、晶片擺置、融化錫球接點之迴銲與助熔劑殘留物的潔淨化。積體電路基板10、接合結構104與另一基板100可稱之為一封裝組件200,或於本實施例中稱之為一覆晶封裝組件。
本發明提供了一側壁保護結構,其由位於銅柱側壁上之一非金屬材料以保護銅柱側壁免於氧化並增加了銅柱側壁與一後續形成的底膠材料間的附著情形。相較於習知之浸入錫(immersion Sn)方法及接著採用之回火程序,此非金屬之側壁保護結構可調整基板之應力,並避免了於迴銲製程中沿著凸塊底金屬層之周圍之銅柱的銲錫濕潤情形。因此其適用於精細間距凸塊技術。
第2A-2D圖為一系列剖面圖,顯示了依據另一實施例之一銅柱凸塊製程內的一半導體裝置之一部的製作,其中將省略相同或相似如第1A-1F圖所示部份之描述。
請參照第2A圖,於位於銅柱20下方之經圖案化之第二凸塊底金屬層16”形成之後,於所形成結構之上形成一阻障層30。於一實施例中,阻障層30覆蓋了銅柱20之底面20a與側面20b以及經圖案化之第二凸塊底金屬層16”之側面16b。於其他實施例中,阻障層30覆蓋了至少銅柱20之頂面20、銅柱20之側面20b與經圖案化之第二凸塊底金屬層16”之側面之一。阻障層30係作為一擴散阻障層之用,以避免位於銅柱20內之銅擴散進入如銲錫之接合材料內,接合材料係用於接合半導體基板10與外部構件。阻障層30亦可稱為一保護層、一抗氧化層或一氧化阻擋層,以防止銅柱20之頂面20a與側面20b免於後續製程中的氧化。阻障層30可藉由選擇性之熱化學氣相沈積法而形成穿透空乏表面。阻障層30係為包括表列於週期表內之III族元素、IV族元素、V族元素或其組合之一含銅材料。於一實施例中,含銅材料層可包括如硼、鍺、矽、碳、氮、磷或其組合,但並不以上述材料為限。於部份實施例中,含銅材料層為一CuGeN膜層、一CuGe膜層、一CuSi膜層、一CuSiN膜層、一CuSiGeN膜層、一CuN膜層、一CuP膜層、一CuC膜層、一CuB膜層或上述膜層之組合,其可藉由採用含硼、鍺、矽、碳、氮、磷或其組合之氣體(例如B2H6、CH4、SiH4、GeH4、NH3、PH3)之一選擇性化學氣相沈積所形成。以形成一CuGeN膜層之一範例為例,於一GeH4之化學氣相沈積後施行一去氧化處理步驟(NH3處理)。一阻障層30可成為一擴散阻障層,以防止銅於後續接合程序中進入銲錫內,以使得IMC的形成可受到控制並變得較為薄化與均勻。阻障層30之厚度為薄的,由於其形成方式類似於於擴散製程。於一實施例中,阻障層30之厚度少於或等於約10奈米。
請參照第2B圖,接著形成保護層22於阻障層30與第一凸塊底金屬層14之露出部之上,例如是藉由一坦覆沈積所形成。保護層22係為非金屬之一材料層,例如一介電材料層、一聚合物材料層或上述膜層之組合。保護層22可為單一材料層或一多重膜層結構。於一實施例中,保護層22係為一聚合物材料層且由一聚合物所形成,例如環氧樹脂、聚亞醯胺、苯環丁烯(BCB)、聚苯噁唑(PBO)及相似物
接著,請參照第2C圖,蝕刻保護層22之特定部,以留下沿著側面20b與16b之部分並形成一側壁間隔物22a,亦可稱之為側壁保護結構22a,其中覆蓋銅柱20之頂面之保護層22於本步驟中被移除。於此步驟中,阻障層30仍殘留於銅柱20之頂面20a之上。接著採用所形成之結構22a作為罩幕而蝕刻第一凸塊底金屬層14,以露出下方之半導體基板10。所形成之凸塊結構32包括了銅柱20、位於銅柱20下方之經圖案化之第二凸塊底金屬層16”、位於經圖案化之第二凸塊底金屬層16”下方且具有延伸至側面16b以外之周圍表面14a之經圖案化之第一凸塊底金屬層14”、覆蓋側面20b與16b以及周圍表面14a之側壁保護結構22a,以及覆蓋了側壁保護結構22a與銅柱20之頂面20a之阻障層30。
請參照第2D圖,半導體基板10經上下顛倒後使之底部黏著至另一基板100。凸塊結構32接觸了基板100之多個導電黏著點,例如為位於接觸銲墊及/或導電線路上之一接合銲錫層102,進而形成耦接了兩個基板10與100之一接合結構104。接合銲錫層102可為一共熔銲錫材料,其包括錫、鉛、銀、銅、鎳、鉍或其組合之合金。積體電路基板10、接合結構104與另一基板100可稱之為一封裝組件200,或於本實施例中稱之為一覆晶封裝組件。
本發明提供了包括銅與鍺之一阻障層,其形成於一側壁保護結構與銅柱側壁之間,其可更避免銅柱側壁免於受到氧化並改進介於銅柱側壁與一後續形成之底膠材料間之的附著情形。如此避免了於迴銲製程中沿著凸塊底金屬層之周圍之銅柱的銲錫濕潤情形。此阻障層不至於對於片電阻值(Rs)造成太大影響。
第3A-3F圖為一系列剖面圖,顯示了依據另一實施例之一銅柱凸塊製程內的一半導體裝置之一部的製作,其中將省略相同或相似如第1A-1F圖所示部份之描述。
請參照第3A圖,於罩幕層18之開口19內形成銅層20之後,形成一上蓋層40於銅層20之頂面20a之上。上蓋層40可作為一阻障層,以防止銅柱內之銅免於擴散進入如銲錫合金之接合材料內,接合材料係用於接合基板10與外部構件。銅擴散的防止增加了封裝物的可靠度與接合強度。上蓋層40可包括鎳、錫、錫-鉛(SnPb)、金、銀、鈀、銦、鎳鈀金(NiPdAu)、鎳金(NiAu)、其他相似材料或合金並可藉由電鍍方法而形成。上蓋材料40具有約為1-10微米之一厚度。於部份實施例中,上蓋層40係為包括了一第一金屬膜層42與一第二金屬膜層44之一多重膜層結構。第一金屬膜層42可包括鎳、金、鈀、鎳基合金、金基合金、或鈀基合金。第二金屬膜層44可包括鎳、金、鈀、鎳基合金、金基合金、或鈀基合金。於一實施例中,第一金屬膜層42為一鎳層、而第二金屬膜層44可為一金層。第一金屬膜層42與第二金屬膜層44分別具有約為1-5微米之一厚度。
請參照第3B圖,接著移除罩幕層18,並露出上蓋層40之頂面40a與側面40b。如第3C圖所示,接著蝕刻第二凸塊底金屬層16之露出部,以露出下方位於銅柱20之外之第一凸塊底金屬層14。接著,如第3D圖所示,於得到結構之上形成保護層22,以覆蓋上蓋層40、銅柱20之側面20b、經圖案化之第二凸塊底金屬層16”之側面16b與第一凸塊底金屬層14之露出部。於施行微影與罩幕技術與乾蝕刻製程之後,以形成一側壁保護結構22a。因而露出了上蓋層40之頂面。接著採用所形成之結構22a作為罩幕層以蝕刻第一凸塊底金屬層14,進而露出下方之基板10。
如第3E圖,所形成之凸塊結構46包括了銅柱20、位於銅柱20之頂面20a上之上蓋層40、位於銅柱20之下方經圖案化之第二凸塊底金屬層16”、位於圖案化之第二凸塊底金屬層16”下方且具有延伸至第二凸塊底金屬層16”之側面16b以外之周圍表面14a之經圖案化之第一凸塊底金屬層14”、以及覆蓋側面40b、20b與16b與周圍表面14a”之側面保護結構22a。半導體基板10接著經過切割後,利用錫球或銅凸塊而安裝於封裝基板或另一晶片上之一銲墊上而封裝至一封裝基板上或另一晶片之上。
請參照第3F圖,半導體基板10經上下顛倒後使之底部黏著至另一基板100。凸塊結構46接觸了基板100之多個導電黏著點,例如為位於接觸銲墊及/或導電線路上之一接合銲錫層102,進而形成耦接了兩個基板10與100之一接合結構104。積體電路基板10、接合結構104與另一基板100可稱之為一封裝組件200,或於本實施例中稱之為一覆晶封裝組件。
第4A-4G圖為一系列剖面圖,顯示了依據另一實施例之一銅柱凸塊製程內的一半導體裝置之一部的製作,其中將省略相同或相似如第3A-3F圖所示部份之描述。
請參照第4A圖,於罩幕層18之開口19內形成銅層20之後,形成上蓋層40於銅層20之頂面20a之上,並接著形成一銲錫層50於上蓋層40之頂面40a之上。銲錫50可由Sn、SnAg、Sn-Pb、SnAgCu(具有少於0.3%重量百分比之Cu)、SnAgZn、SnZn、SnBi-In、Sn-In、Sn-Au、SnPb、SnCu、SnZnIn或SnAgSb等材料,並藉由如電鍍程序所形成。於一實施例中,銲錫層50係為一無鉛銲錫層。對於一無鉛銲錫系統而言,銲錫層係為SnAg,其具有可控制低於3.0重量百分比之Ag含量。舉例來說,無鉛銲錫層為具有金含量控制至約為2.5重量百分比之SnAg層。
如第4B圖所示,接著移除罩幕層18,並露出銲錫層50之頂面50a與側面50b。上蓋層40之側面40b亦於此步驟中露出。如第4C圖所示,接著蝕刻第二凸塊底金屬層16之露出部,以露出下方之銅柱20以外之第一凸塊底金屬層14。接著,如第4D圖所示,形成保護層22於得到之結構上,以覆蓋銲錫層50、上蓋層40、銅柱20的側面20b、經圖案化之第二凸塊底金屬層16”之側面16b以及第一凸塊底金屬層14之露出部。於施行微影與罩幕技術及乾蝕刻製程之後,形成了如第4E圖所示側壁保護結構22a。因而露出銲錫層50之頂面50a。第一凸塊底金屬層14接著蝕刻採用所形成之結構22作為罩幕,露出下方基板10。
請參照第4F圖,針對銲錫層50施行一迴銲(reflowing)程序以形成經迴銲之銲錫層50”於上蓋層40之上。如此形成了一凸塊結構52,其包括了銅柱20、位於銅柱20上之上蓋層40、位於上蓋層40上之經迴銲之銲錫層50”、位於銅柱20之下之經圖案化之第二凸塊底金屬層16”、位於經圖案化之第二凸塊底金屬層16”且具有延伸至第二凸塊底金屬層16”之側面16b以外之周圍表面14a”之經圖案化之第一凸塊底金屬層14”、以及覆蓋了側面40b、20b、16b與周圍表面14a”之側壁保護結構22a。半導體基板10接著經過切割後,利用錫球或銅凸塊而安裝於封裝基板或另一晶片上之一銲墊上而封裝至一封裝基板上或另一晶片之上。
請參照第4G圖,半導體基板10經上下顛倒後使之底部黏著至另一基板100。凸塊結構52接觸了基板100之多個導電黏著點,例如為位於接觸銲墊及/或導電線路上之一接合銲錫層102,進而形成耦接了兩個基板10與100之一接合結構104。積體電路基板10、接合結構104與另一基板100可稱之為一封裝組件200,或於本實施例中稱之為一覆晶封裝組件。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可作更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10...半導體基板
12...凸塊底金屬層
14...第一凸塊底金屬層
14a...第一凸塊底金屬層之一部
14”...經圖案化之第一凸塊底金屬層
14a”...周圍表面
16...第二凸塊底金屬層
16”...經圖案化之第二凸塊底金屬層
16b...圖案化之第二凸塊底金屬層之側面
18...罩幕層
19...開口
20...銅層/銅柱
20a...銅層/銅柱之頂面
20b...銅層/銅柱之側面
22...保護層
22a...側壁間隔物/側壁保護結構
24...凸塊結構
30...阻障層
32...凸塊結構
40...上蓋層
40a...上蓋層之頂面
40b...上蓋層之側面
42...第一金屬膜層
44...第二金屬膜層
46...凸塊結構
50...銲錫層
50a...銲錫層之頂面
50b...銲錫層之側面
52...凸塊結構
100...基板
102...接合銲錫層
104...接合結構
200...封裝組件
第1A-1F圖為一系列剖面圖,顯示了依據本發明一實施例之銅柱凸塊製程中之不同階段內之一半導體裝置之一部;
第2A-2D圖為一系列剖面圖,顯示了依據本發明另一實施例之銅柱凸塊製程中之不同階段內之一半導體裝置之一部;
第3A-3F圖為一系列剖面圖,顯示了依據本發明又一實施例之銅柱凸塊製程中之不同階段內之一半導體裝置之一部;以及
第4A-4G圖為一系列剖面圖,顯示了依據本發明另一實施例之之銅柱凸塊製程中之不同階段內之一半導體裝置之一部。
14”...經圖案化之第一凸塊底金屬層
14a”...周圍表面
16”...經圖案化之第二凸塊底金屬層
20...銅層/銅柱
22a...側壁間隔物/側壁保護結構
24...凸塊結構
Claims (10)
- 一種積體電路裝置,包括:一半導體基板;一第一凸塊底金屬層,形成於該半導體基板之上;一第二凸塊底金屬層,形成於該第一凸塊底金屬層之上,具有一側面;一導電柱,形成於該第二凸塊底金屬層之上,具有一側面與一頂面;以及一保護結構,形成於該導電柱之該側面與該第二凸塊底金屬層之該側面之上;其中該保護結構係由一非金屬材料所形成,而該導電柱係由一含銅層所形成。
- 如申請專利範圍第1項所述之積體電路裝置,其中該保護結構包括一介電層、一聚合物層、一氮化矽層、一聚亞醯胺層或上述膜層之組合。
- 如申請專利範圍第1項所述之積體電路裝置,其中該第一凸塊底金屬層包括未為該第二凸塊底金屬層所覆蓋之一周圍表面,其中該保護結構係形成於該第一凸塊底金屬層之該周圍表面之上。
- 如申請專利範圍第1項所述之積體電路裝置,更包括一阻障層形成於該導電柱與該保護結構之間,其中該阻障層係為包括鍺之一含銅材料層,其中該阻障層係形成於該導電柱之該頂面之上。
- 如申請專利範圍第1項所述之積體電路裝置,更包括一上蓋層,位於該導電柱之該頂面之上,其中該上蓋層包括位於該導電柱之上之一鎳層與位於該鎳層上之一金層,其中該保護結構覆蓋了至少該上蓋層之該側面的一部。
- 如申請專利範圍第1項所述之積體電路裝置,其中該第一凸塊底金屬膜層包括鈦,而該第二凸塊底金屬層包括銅。
- 一種積體電路裝置,包括:一半導體基板;一凸塊結構,形成於該半導體基板之上;以及一非金屬之保護結構,覆蓋至少該凸塊結構之側壁之一部;其中該凸塊結構包括形成於該半導體基板之上之一凸塊底金屬層以及形成於該凸塊底金屬層之上之一銅柱。
- 如申請專利範圍第7項所述之積體電路裝置,其中該非金屬之保護結構包括一氮化矽層、一聚合物層或上述膜層之組合。
- 如申請專利範圍第7項所述之積體電路裝置,更包括一阻障層,形成於該凸塊結構與該非金屬之保護結構之間,其中該阻障層包括銅與鍺。
- 一種封裝組件,包括:一第一基板;一凸塊結構,形成於該第一基板之上,其中該凸塊結構包括形成於該第一基板之上之一凸塊底金屬層以及形成於該凸塊底金屬層之上之一銅柱;一非金屬之保護結構,覆蓋至少該凸塊結構之側壁之一部,其中該非金屬之保護結構包括一氮化矽層、一聚合物層或上述膜層之組合;一第二基板;以及一接合銲錫層,形成於該第二基板與該凸塊結構之間。
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- 2010-08-17 CN CN201510711114.1A patent/CN105390473B/zh active Active
- 2010-08-17 CN CN2010102570393A patent/CN102201375A/zh active Pending
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Also Published As
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US20150325546A1 (en) | 2015-11-12 |
US11257714B2 (en) | 2022-02-22 |
US9136167B2 (en) | 2015-09-15 |
US8841766B2 (en) | 2014-09-23 |
CN105390473A (zh) | 2016-03-09 |
TW201133744A (en) | 2011-10-01 |
CN102201375A (zh) | 2011-09-28 |
US20140363970A1 (en) | 2014-12-11 |
CN105390473B (zh) | 2018-12-14 |
US20110233761A1 (en) | 2011-09-29 |
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