CN110164775B - 高功率mos芯片与控制芯片组合封装结构与封装方法 - Google Patents
高功率mos芯片与控制芯片组合封装结构与封装方法 Download PDFInfo
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Abstract
本发明提供一种高功率MOS芯片与控制芯片组合封装结构,包括:金属框架、MOS芯片、金属散热片、控制芯片、金属线、塑封料;所述金属框架设有一凹陷部;金属框架上预先制有线路,便于连接MOS芯片和控制芯片;在金属框架背面的凹陷部中倒装焊接有MOS芯片;MOS芯片与金属框架上的相应焊垫通过凸件连接;在MOS芯片的背面贴装有金属散热片;金属散热片与MOS芯片背面的漏极相连;在金属框架凹陷部所对应的正面突出部安装有控制芯片;控制芯片通过金属线与金属框架上相应焊垫连接;在金属框架正面、金属框架背面的凹陷部内、金属线外围设有塑封料;本发明MOS芯片大功率输出时电性能更优,散热效果更好。
Description
技术领域
本发明属于集成电路封装技术领域,尤其是一种高功率MOS芯片与控制芯片组合封装结构与封装方法。
背景技术
现有的MOS芯片与控制芯片的组合堆叠结构,需要借助于胶膜堆叠结构,参见图1;
1. 先将MOS芯片在基板或框架上进行装片;
2. 然后对MOS芯片进行焊金属线作业;
3. 将磨划好的带胶膜的控制芯片进行装片,胶膜覆盖MOS芯片上连接的金属线;
4. 对控制芯片焊金属线;
5. 最后通过塑封料包封以保护产品结构。
目前已有的可实现MOS芯片与控制芯片堆叠的技术中,有如下缺点:
1)MOS芯片栅极需要大功率输出时,焊接的金属线电性能不佳;
2)MOS芯片需要散热时,基板或金属框架达不到MOS芯片的散热需要。
发明内容
本发明的目的在于克服现有技术中存在的不足,提供一种高功率MOS芯片与控制芯片组合封装结构,以及相应的封装方法,使得组合封装结构中的MOS芯片大功率输出时电性能更优,加厚了MOS芯片散热通道,散热效果更好。本发明采用的技术方案是:
一种高功率MOS芯片与控制芯片组合封装方法,包括以下步骤;
步骤S1,提供一金属框架,所述金属框架设有一凹陷部;金属框架上预先制有线路,便于连接MOS芯片和控制芯片;
步骤S2,在金属框架背面的凹陷部中通过倒装焊工艺焊接MOS芯片;MOS芯片与金属框架上的相应焊垫通过凸件连接;
步骤S3,在MOS芯片的背面贴装金属散热片;金属散热片与MOS芯片背面的漏极相连;
步骤S4,在金属框架背面和金属散热片背面贴装胶带;所述胶带盖住金属框架的凹陷部;
步骤S5,在金属框架凹陷部所对应的正面突出部安装控制芯片;
步骤S6,对正装的控制芯片进行焊金属线作业,使得金属线连接控制芯片和金属框架上相应焊垫;
步骤S7,塑封料填充:通过压缩或注塑工艺,将金属框架正面、金属框架背面的凹陷部内、金属线外围填充塑封料;
步骤S8,去除胶带,然后在金属散热片背面,以及金属框架背面需要进行输出连接的位置上焊锡。
进一步地,步骤S1中,在金属框架凹陷部中设有通孔,以及引导槽。
进一步地,步骤S2中,凸件是铜柱,或者焊球;MOS芯片底部至少设有一处引导槽。
进一步地,步骤S3中,金属散热片的背面与金属框架凹陷部外围的平整部背面齐平或大致齐平。
一种高功率MOS芯片与控制芯片组合封装结构,包括:金属框架、MOS芯片、金属散热片、控制芯片、金属线、塑封料;
所述金属框架设有一凹陷部;金属框架上预先制有线路,便于连接MOS芯片和控制芯片;
在金属框架背面的凹陷部中倒装焊接有MOS芯片;MOS芯片与金属框架上的相应焊垫通过凸件连接;在MOS芯片的背面贴装有金属散热片;金属散热片与MOS芯片背面的漏极相连;
在金属框架凹陷部所对应的正面突出部安装有控制芯片;控制芯片通过金属线与金属框架上相应焊垫连接;
在金属框架正面、金属框架背面的凹陷部内、金属线外围设有塑封料;
在金属散热片背面,以及金属框架背面需要进行输出连接的位置设有焊锡。
进一步地,凸件是铜柱,或者焊球。
进一步地,MOS芯片底部至少设有一处引导槽。
进一步地,在金属框架凹陷部中设有通孔。
本发明的优点在于:
1)在MOS芯片背面贴装更厚的金属散热片,加厚了MOS芯片的散热通道,满足了MOS芯片的散热要求。
2)MOS芯片正面栅极需要大功率输出时,栅极通过铜柱或焊球连接至金属框架上,电性能更优。
3)将倒装芯片与正装芯片分别置于金属框架的背面与正面,相比正装芯片与正装芯片的堆叠封装结构,可以减少焊线的布设空间,提高框架的利用率,减小封装尺寸。
附图说明
图1为现有的MOS芯片与控制芯片的组合堆叠结构示意图。
图2为本发明的金属框架示意图。
图3为本发明的MOS芯片装片示意图。
图4为本发明的MOS芯片背面贴装金属芯片示意图。
图5为本发明的金属框架背面和金属散热片背面贴装胶带示意图。
图6为本发明的金属框架正面突出部安装控制芯片示意图。
图7为本发明的对正装的控制芯片焊接金属线示意图。
图8为本发明的填充塑封料示意图。
图9为本发明的金属散热片背面和金属框架背面上焊锡示意图。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
高功率MOS芯片与控制芯片组合封装方法,包括以下步骤;
步骤S1,如图2所示,提供一金属框架1,所述金属框架1设有一凹陷部101;在金属框架凹陷部101中设有通孔2,以及引导槽3;
金属框架1上预先制有线路,便于连接MOS芯片和控制芯片;
通孔2和引导槽3便于后续塑封料填充;
步骤S2,如图3所示,在金属框架1背面的凹陷部101中通过倒装焊工艺焊接MOS芯片4;MOS芯片4与金属框架1上的相应焊垫通过凸件5连接;
凸件5可以是铜柱,或者焊球;
MOS芯片4底部至少设有一处引导槽3;
步骤S3,如图4所示,在MOS芯片4的背面贴装金属散热片6;金属散热片6与MOS芯片4背面的漏极相连;
金属散热片6不仅起到散热作用,而且还起到MOS芯片4背面漏极引出的作用;
金属散热片6的背面与金属框架1凹陷部外围的平整部背面齐平或大致齐平;
步骤S4,如图5所示,在金属框架1背面和金属散热片6背面贴装胶带7;所述胶带7盖住金属框架1的凹陷部101;
步骤S5,如图6所示,在金属框架1凹陷部所对应的正面突出部安装控制芯片8;
步骤S6,如图7所示,对正装的控制芯片8进行焊金属线9作业,使得金属线9连接控制芯片8和金属框架1上相应焊垫;
步骤S7,如图8所示,塑封料10填充:通过压缩或注塑工艺,将金属框架正面、金属框架背面的凹陷部内、金属线外围填充塑封料;
金属框架背面的凹陷部内填充塑封料后,MOS芯片底部、通孔也就填充了塑封料;
步骤S8,如图9所示,去除胶带7,然后在金属散热片6背面,以及金属框架1背面需要进行输出连接的位置上焊锡11。
最后所应说明的是,以上具体实施方式仅用以说明本发明的技术方案而非限制,尽管参照实例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。
Claims (5)
1.一种高功率MOS芯片与控制芯片组合封装方法,其特征在于,包括以下步骤;
步骤S1,提供一金属框架(1),所述金属框架(1)设有一凹陷部(101);金属框架(1)上预先制有线路,便于连接MOS芯片和控制芯片;
步骤S2,在金属框架(1)背面的凹陷部(101)中通过倒装焊工艺焊接MOS芯片(4);MOS芯片(4)与金属框架(1)上的相应焊垫通过凸件(5)连接;
步骤S3,在MOS芯片(4)的背面贴装金属散热片(6);金属散热片(6)与MOS芯片(4)背面的漏极相连;
步骤S4,在金属框架(1)背面和金属散热片(6)背面贴装胶带(7);所述胶带(7)盖住金属框架(1)的凹陷部(101);
步骤S5,在金属框架(1)凹陷部所对应的正面突出部安装控制芯片(8);
步骤S6,对正装的控制芯片(8)进行焊金属线(9)作业,使得金属线(9)连接控制芯片(8)和金属框架(1)上相应焊垫;
步骤S7,塑封料(10)填充:通过压缩或注塑工艺,将金属框架正面、金属框架背面的凹陷部内、金属线外围填充塑封料;
步骤S8,去除胶带(7),然后在金属散热片(6)背面,以及金属框架(1)背面需要进行输出连接的位置上焊锡(11);
步骤S2中,凸件(5)是铜柱,或者焊球;MOS芯片(4)底部至少设有一处引导槽(3)。
2.如权利要求1所述的高功率MOS芯片与控制芯片组合封装方法,其特征在于,步骤S1中,在金属框架凹陷部(101)中设有通孔(2),以及引导槽(3)。
3.如权利要求1所述的高功率MOS芯片与控制芯片组合封装方法,其特征在于,步骤S3中,金属散热片(6)的背面与金属框架(1)凹陷部外围的平整部背面齐平或大致齐平。
4.一种高功率MOS芯片与控制芯片组合封装结构,其特征在于,包括:金属框架(1)、MOS芯片(4)、金属散热片(6)、控制芯片(8)、金属线(9)、塑封料(10);
所述金属框架(1)设有一凹陷部(101);金属框架(1)上预先制有线路,便于连接MOS芯片和控制芯片;
在金属框架(1)背面的凹陷部(101)中倒装焊接有MOS芯片(4);MOS芯片(4)与金属框架(1)上的相应焊垫通过凸件(5)连接;在MOS芯片(4)的背面贴装有金属散热片(6);金属散热片(6)与MOS芯片(4)背面的漏极相连;
在金属框架(1)凹陷部所对应的正面突出部安装有控制芯片(8);控制芯片(8)通过金属线(9)与金属框架(1)上相应焊垫连接;
在金属框架正面、金属框架背面的凹陷部内、金属线外围设有塑封料(10);
在金属散热片(6)背面,以及金属框架(1)背面需要进行输出连接的位置设有焊锡(11);
凸件(5)是铜柱,或者焊球;MOS芯片(4)底部至少设有一处引导槽(3)。
5.如权利要求4所述的高功率MOS芯片与控制芯片组合封装结构,其特征在于,在金属框架凹陷部(101)中设有通孔(2)。
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