JP2007165635A - トレンチ構造半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 20
- 108091006146 Channels Proteins 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
【課題】破壊し難いIGBTを容易に形成することが困難であった。
【解決手段】半導体基板1は内側トレンチ2aと外側トレンチ2bとを有する。各トレンチ2a,2bに隣接してエミッタ領域3を設ける。エミッタ領域3及び各トレンチ2a,2bに隣接させてP型ベース領域4を設ける。内側トレンチ2aに隣接させて第1のN型ベース領域31を設ける。第1のN型ベース領域31よりも不純物濃度の低い第2のN型ベース領域32を外側トレンチ2bと第1のN型ベース領域31とに隣接して設ける。過電圧が印加された時に内側トレンチ2aの近傍にブレークダウンが生じ、電流の集中が緩和される。
【選択図】図2
Description
前記半導体基板の中に形成され且つ前記内側トレンチに隣接配置され且つ前記半導体基板の前記一方の主面に露出している表面を有し且つ第1の導電型を有している第1の半導体領域(例えばエミッタ領域)と、
前記半導体基板の中に形成され且つ前記第1の半導体領域に隣接し且つ前記第1の半導体領域よりも深い位置で前記内側及び外側トレンチに隣接し且つ前記半導体基板の前記一方の主面に露出する表面を有し且つ第2の導電型を有している第2の半導体領域(例えばP型ベース領域)と、
前記半導体基板の中に形成され且つ前記第2の半導体領域と前記内側トレンチとの両方に隣接し且つ前記半導体基板の前記一方の主面を基準にして前記内側トレンチよりも深く形成され且つ第1の導電型を有している第3の半導体領域(例えば第1のN型ベース領域)と、
前記半導体基板の中に形成され且つ前記2及び第3の半導体領域と前記外側トレンチとに隣接し且つ前記外側トレンチよりも外側において前記半導体基板の前記一方の主面に露出する表面を有し且つ第1の導電型を有し且つ前記第3の半導体領域よりも低い不純物濃度を有している第4の半導体領域(例えば第2のN型ベース領域)と、
前記内側及び外側トレンチの壁面に設けられた絶縁膜と、
前記内側及び外側トレンチの中に配置され且つ前記絶縁膜を介して前記内側及び外側トレンチの壁面に対向しているトレンチ導電体と、
前記第1の半導体領域に電気的に接続された第1の主電極(例えばエミッタ電極)と、
前記第4の半導体領域に直接に又は別の半導体領域を介して電気的に接続された第2の主電極(例えばコレクタ電極)と、
前記トレンチ導電体に電気的に接続されたゲート電極と
を備えていることを特徴とするトレンチ構造半導体装置に係わるものである。
また、請求項3に示すように、更に、前記第4の半導体領域と前記第5の半導体領域との間に配置され且つ第1導電型を有し且つ前記第4の半導体領域よりも高い不純物濃度を有している第6の半導体領域を備えていることが望ましい。
また、請求項4に示すように、前記第2の主電極を、前記第4の半導体領域にシヨトッキー接触している金属電極をすることができる。
(1) 図6の内側トレンチ2a1と外側トレンチ2b1とのパターン、及び図7の内側トレンチ2a2と外側トレンチ2b2とのパターンをFETにも適用可能である。
(2) 図2及び図4のIGBTにおいて外側トレンチ2bの外側にもN+型エミッタ領域3を設けることができる。また、図2及び図4において外側トレンチ2bの内側に隣接するN+型のエミッタ領域3を省くこともできる。
(3) 図5のFETにおいて、外側トレンチ2bの外側にもN+型ソース領域3´を設けることができる。また、図5において外側トレンチ2bの内側に隣接するN+型ソース領域3´を省くこともできる。
(4) 図6において、外側トレンチ2b1を囲むN+型エミッタ領域3aを省くことができる。
(5) 半導体基板1,1a,1b,1cの中の各領域の導電型を実施例と逆にすることができる。
(6) 外側トレンチ2b,2b1,2b2の外側に周知のガードリング領域又はフィールドプレート又はこれ等の両方を設けることができる。
(7) 図2のP+型コレクタ領域7、図5のN+型ドレイン領域40を半導体基板1,1bの一方の主面21側に導出し、コレクタ電極13、ドレイン電極13´を、半導体基板1,1bの一方の主面21側に設けることができる。
(8)P型ベース領域4の下面は平坦であることが望ましいが、場合によっては前述の特許文献1に示されているように突出部分を有することもできる。
(9)図2の幅W1,W2の関係はW1<W2であることが望ましいが、W1=W2とすることもできる。
2 トレンチ
2a,2a1,2a2 内側トレンチ
2b,2c,2d,2b1,2b2 外側トレンチ
3 エミッタ領域
4 P型ベース領域
5 N型ベース領域
31 第1のN型ベース領域
32 第2のN型ベース領域
Claims (4)
- 互いに対向している一方及び他方の主面と、前記一方の主面の内側部分において前記一方の主面から前記他方の主面に向かって延びている内側トレンチと、前記一方の主面の前記内側部分よりも外側の部分において前記一方の主面から前記他方の主面に向かって延びている外側トレンチとを有している半導体基板と、
前記半導体基板の中に形成され且つ前記内側トレンチに隣接配置され且つ前記半導体基板の前記一方の主面に露出している表面を有し且つ第1の導電型を有している第1の半導体領域と、
前記半導体基板の中に形成され且つ前記第1の半導体領域に隣接し且つ前記第1の半導体領域よりも深い位置で前記内側及び外側トレンチに隣接し且つ前記半導体基板の前記一方の主面に露出する表面を有し且つ第2の導電型を有している第2の半導体領域と、
前記半導体基板の中に形成され且つ前記第2の半導体領域と前記内側トレンチとの両方に隣接し且つ前記半導体基板の前記一方の主面を基準にして前記内側トレンチよりも深く形成され且つ第1の導電型を有している第3の半導体領域と、
前記半導体基板の中に形成され且つ前記2及び第3の半導体領域と前記外側トレンチとに隣接し且つ前記外側トレンチよりも外側において前記半導体基板の前記一方の主面に露出する表面を有し且つ第1の導電型を有し且つ前記第3の半導体領域よりも低い不純物濃度を有している第4の半導体領域と、
前記内側及び外側トレンチの壁面に設けられた絶縁膜と、
前記内側及び外側トレンチの中に配置され且つ前記絶縁膜を介して前記内側及び外側トレンチの壁面に対向しているトレンチ導電体と、
前記第1の半導体領域に電気的に接続された第1の主電極と、
前記第4の半導体領域に直接に又は別の半導体領域を介して電気的に接続された第2の主電極と、
前記トレンチ導電体に電気的に接続されたゲート電極と
を備えていることを特徴とするトレンチ構造半導体装置。 - 更に、前記第4の半導体領域と前記半導体基板の前記他方の主面との間に配置され且つ第2導電型を有している第5の半導体領域を備え、且つ前記第2の主電極は前記第5の半導体領域に電気的に接続されていることを特徴とする請求項1記載のトレンチ構造半導体装置。
- 更に、前記第4の半導体領域と前記第5の半導体領域との間に配置され且つ第1導電型を有し且つ前記第4の半導体領域よりも高い不純物濃度を有している第6の半導体領域を備えていることを特徴とする請求項2記載のトレンチ構造半導体装置。
- 前記第2の主電極は、前記第4の半導体領域にショットキー接触している金属電極であることを特徴とする請求項1記載のトレンチ構造半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005360622A JP4609656B2 (ja) | 2005-12-14 | 2005-12-14 | トレンチ構造半導体装置 |
CN200680046922XA CN101331609B (zh) | 2005-12-14 | 2006-12-11 | 沟槽结构半导体装置 |
PCT/JP2006/324688 WO2007069571A1 (ja) | 2005-12-14 | 2006-12-11 | トレンチ構造半導体装置 |
KR1020087011905A KR100965354B1 (ko) | 2005-12-14 | 2006-12-11 | 트렌치 구조 반도체 장치 |
CN201210435227.XA CN102903740B (zh) | 2005-12-14 | 2006-12-11 | 具有沟槽结构的绝缘栅双极型晶体管 |
EP06834443A EP1970963A4 (en) | 2005-12-14 | 2006-12-11 | SEMICONDUCTOR DEVICE OF TRENCH STRUCTURE |
US12/138,893 US7709931B2 (en) | 2005-12-14 | 2008-06-13 | Trenched semiconductor device |
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US8442017B2 (en) | 2006-10-30 | 2013-05-14 | Lg Electronics Inc. | Method for transmitting random access channel message and response message, and mobile communication terminal |
US8184570B2 (en) | 2007-04-30 | 2012-05-22 | Lg Electronics Inc. | Method of transmitting data in wireless communication system supporting multimedia broadcast/multicast service |
US8184576B2 (en) | 2007-04-30 | 2012-05-22 | Lg Electronics Inc. | Method for state transition of mobile terminal |
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JP7478716B2 (ja) | 2012-08-21 | 2024-05-07 | ローム株式会社 | 半導体装置 |
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JP2018093067A (ja) * | 2016-12-02 | 2018-06-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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EP1970963A1 (en) | 2008-09-17 |
KR100965354B1 (ko) | 2010-06-22 |
CN102903740B (zh) | 2015-06-24 |
CN102903740A (zh) | 2013-01-30 |
CN101331609A (zh) | 2008-12-24 |
WO2007069571A1 (ja) | 2007-06-21 |
CN101331609B (zh) | 2013-01-23 |
US20080251810A1 (en) | 2008-10-16 |
US7709931B2 (en) | 2010-05-04 |
JP4609656B2 (ja) | 2011-01-12 |
KR20080060285A (ko) | 2008-07-01 |
EP1970963A4 (en) | 2009-04-29 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |