JP2007150150A5 - - Google Patents

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Publication number
JP2007150150A5
JP2007150150A5 JP2005345347A JP2005345347A JP2007150150A5 JP 2007150150 A5 JP2007150150 A5 JP 2007150150A5 JP 2005345347 A JP2005345347 A JP 2005345347A JP 2005345347 A JP2005345347 A JP 2005345347A JP 2007150150 A5 JP2007150150 A5 JP 2007150150A5
Authority
JP
Japan
Prior art keywords
region
power supply
semiconductor device
wiring
supply wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005345347A
Other languages
English (en)
Japanese (ja)
Other versions
JP4995455B2 (ja
JP2007150150A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005345347A external-priority patent/JP4995455B2/ja
Priority to JP2005345347A priority Critical patent/JP4995455B2/ja
Priority to TW095143265A priority patent/TWI396256B/zh
Priority to TW104120440A priority patent/TWI570844B/zh
Priority to TW102105612A priority patent/TWI496245B/zh
Priority to US11/604,855 priority patent/US20070120258A1/en
Priority to CN2006101629073A priority patent/CN1976032B/zh
Priority to CN2009102052584A priority patent/CN101685818B/zh
Priority to CN2010102550934A priority patent/CN101937916B/zh
Priority to KR1020060119984A priority patent/KR101336355B1/ko
Publication of JP2007150150A publication Critical patent/JP2007150150A/ja
Priority to US12/253,850 priority patent/US7714357B2/en
Publication of JP2007150150A5 publication Critical patent/JP2007150150A5/ja
Priority to US12/727,811 priority patent/US8552561B2/en
Publication of JP4995455B2 publication Critical patent/JP4995455B2/ja
Application granted granted Critical
Priority to US14/011,704 priority patent/US8946770B2/en
Priority to US14/591,817 priority patent/US9093283B2/en
Priority to US14/746,774 priority patent/US9343460B2/en
Priority to US15/099,574 priority patent/US9515019B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2005345347A 2005-11-30 2005-11-30 半導体装置 Expired - Lifetime JP4995455B2 (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP2005345347A JP4995455B2 (ja) 2005-11-30 2005-11-30 半導体装置
TW095143265A TWI396256B (zh) 2005-11-30 2006-11-22 Semiconductor device
TW104120440A TWI570844B (zh) 2005-11-30 2006-11-22 Semiconductor device
TW102105612A TWI496245B (zh) 2005-11-30 2006-11-22 Semiconductor device
US11/604,855 US20070120258A1 (en) 2005-11-30 2006-11-28 Semiconductor device
CN2006101629073A CN1976032B (zh) 2005-11-30 2006-11-29 半导体器件
CN2009102052584A CN101685818B (zh) 2005-11-30 2006-11-29 半导体器件
CN2010102550934A CN101937916B (zh) 2005-11-30 2006-11-29 半导体设备
KR1020060119984A KR101336355B1 (ko) 2005-11-30 2006-11-30 반도체장치
US12/253,850 US7714357B2 (en) 2005-11-30 2008-10-17 Semiconductor device
US12/727,811 US8552561B2 (en) 2005-11-30 2010-03-19 Semiconductor device with output circuit arrangement
US14/011,704 US8946770B2 (en) 2005-11-30 2013-08-27 Semiconductor device with output circuit and pad
US14/591,817 US9093283B2 (en) 2005-11-30 2015-01-07 Semiconductor devices with output circuit and pad
US14/746,774 US9343460B2 (en) 2005-11-30 2015-06-22 Semiconductor device with output circuit and pad arrangements
US15/099,574 US9515019B2 (en) 2005-11-30 2016-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005345347A JP4995455B2 (ja) 2005-11-30 2005-11-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2007150150A JP2007150150A (ja) 2007-06-14
JP2007150150A5 true JP2007150150A5 (cg-RX-API-DMAC7.html) 2008-12-25
JP4995455B2 JP4995455B2 (ja) 2012-08-08

Family

ID=38086651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005345347A Expired - Lifetime JP4995455B2 (ja) 2005-11-30 2005-11-30 半導体装置

Country Status (5)

Country Link
US (7) US20070120258A1 (cg-RX-API-DMAC7.html)
JP (1) JP4995455B2 (cg-RX-API-DMAC7.html)
KR (1) KR101336355B1 (cg-RX-API-DMAC7.html)
CN (3) CN1976032B (cg-RX-API-DMAC7.html)
TW (3) TWI396256B (cg-RX-API-DMAC7.html)

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US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
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US8592860B2 (en) 2011-02-11 2013-11-26 Analog Devices, Inc. Apparatus and method for protection of electronic circuits operating under high stress conditions
US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
US8947841B2 (en) 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
US8610251B1 (en) 2012-06-01 2013-12-17 Analog Devices, Inc. Low voltage protection devices for precision transceivers and methods of forming the same
US8637899B2 (en) 2012-06-08 2014-01-28 Analog Devices, Inc. Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
US8796729B2 (en) 2012-11-20 2014-08-05 Analog Devices, Inc. Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
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US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
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JP5916820B2 (ja) * 2014-08-25 2016-05-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置
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JP6849927B2 (ja) * 2016-03-28 2021-03-31 株式会社ソシオネクスト 半導体集積回路装置
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
JP6790705B2 (ja) * 2016-10-13 2020-11-25 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
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JP7613029B2 (ja) * 2020-09-09 2025-01-15 株式会社ソシオネクスト 半導体装置
US11973075B2 (en) * 2021-02-22 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Dual substrate side ESD diode for high speed circuit
JPWO2022215485A1 (cg-RX-API-DMAC7.html) 2021-04-08 2022-10-13
WO2023037467A1 (ja) * 2021-09-09 2023-03-16 株式会社ソシオネクスト 半導体集積回路装置
WO2024029040A1 (ja) * 2022-08-04 2024-02-08 株式会社ソシオネクスト 半導体集積回路装置
JPWO2024047820A1 (cg-RX-API-DMAC7.html) * 2022-08-31 2024-03-07
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