JP4483231B2 - 磁気メモリ装置の製造方法 - Google Patents
磁気メモリ装置の製造方法 Download PDFInfo
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- JP4483231B2 JP4483231B2 JP2003303410A JP2003303410A JP4483231B2 JP 4483231 B2 JP4483231 B2 JP 4483231B2 JP 2003303410 A JP2003303410 A JP 2003303410A JP 2003303410 A JP2003303410 A JP 2003303410A JP 4483231 B2 JP4483231 B2 JP 4483231B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 18
- 230000005415 magnetization Effects 0.000 claims description 49
- 230000015654 memory Effects 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 26
- 239000000470 constituent Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 140
- 239000007789 gas Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 25
- 239000000460 chlorine Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
Description
基板上に、白金及びマンガンの少なくとも一方を含有する層を含む前記磁化固定層の 構成材料層と、前記トンネルバリア層の構成材料層と、前記磁性層の構成材料層とを順 次形成する工程と、
前記磁性層の構成材料層を、シリコン酸化膜を含む第1のマスクを用いてドライエッ チングして、前記磁性層を形成する工程と、
前記磁化固定層の構成材料層上に、前記磁性層をこの側面から上面にかけて完全に覆 うようにシリコン酸化膜からなる絶縁膜を設ける工程と、
前記絶縁膜上に、シリコン酸化膜を含む第2のマスクを設ける工程と、
前記第2のマスクを用いて、前記絶縁膜及び前記磁化固定層の構成材料層をパルスプ ラズマによりドライエッチングして、前記磁化固定層を形成する工程と
を有することを特徴とする、磁気メモリ装置の製造方法に係るものである。
Cl2供給量=50sccm、チャンバ内圧力=2mTorr、ECRパワー=1000W(2.5GHz)、
バイアス=100W(600kHz)、基板(ステージ)温度=30℃、チャンバ壁温=150℃、
ECR電源のOn/Off時間=30μsec/30μsec、エッチング時間=90sec。
H2供給量=50sccm、チャンバ内圧力=2mTorr、ECRパワー=1000W(2.5GHz)、
バイアス=100W(600kHz)、基板(ステージ)温度=30℃、チャンバ壁温=150℃、
処理時間=60sec。
4…第1の磁化固定層、5…反強磁性結合層、6…第2の磁化固定層、
7…反強磁性体層、8…下地層、9…支持基板、10…TMR素子、11…ビット線、
12…書き込み用ワード線、12a、33a…コンタクトプラグ、
13…シリコン基板、14…ウェル領域、15…ゲート絶縁膜、16…ゲート電極、
17…ソース領域、18…ドレイン領域、
19…読み出し用電界効果トランジスタ(選択用トランジスタ)、20…ソース電極、
21…センスライン、22…配線、24…ワード線電流駆動回路、
25…ビット線電流駆動回路、26…磁化固定層(ピン層)、30…バリア膜、
110、120…配線溝、31、35、40、42、105…層間絶縁膜、
32、43、106…拡散防止膜、33、34…下層配線、101、103、…マスク、
102、104…絶縁膜、123…読み出しライン、A…メモリ部、B…周辺回路部
Claims (3)
- 磁化方向が固定された磁化固定層と、トンネルバリア層と、磁化方向の変化が可能な磁性層とが積層されてなるトンネル磁気抵抗効果素子によって構成された磁気メモリ素子からなるメモリ部を有する磁気メモリ装置の製造方法において、
基板上に、白金及びマンガンの少なくとも一方を含有する層を含む前記磁化固定層の 構成材料層と、前記トンネルバリア層の構成材料層と、前記磁性層の構成材料層とを順 次形成する工程と、
前記磁性層の構成材料層を、シリコン酸化膜を含む第1のマスクを用いてドライエッ チングして、前記磁性層を形成する工程と、
前記磁化固定層の構成材料層上に、前記磁性層をこの側面から上面にかけて完全に覆 うようにシリコン酸化膜からなる絶縁膜を設ける工程と、
前記絶縁膜上に、シリコン酸化膜を含む第2のマスクを設ける工程と、
前記第2のマスクを用いて、前記絶縁膜及び前記磁化固定層の構成材料層をパルスプ ラズマによりドライエッチングして、前記磁化固定層を形成する工程と
を有することを特徴とする、磁気メモリ装置の製造方法。 - 前記第2のマスクを用いて、前記トンネルバリア層の構成材料層及び前記磁化固定層の構成材料層を前記パルスプラズマによりドライエッチングして、前記トンネルバリア層及び前記磁化固定層を形成する、請求項1に記載した磁気メモリ装置の製造方法。
- 前記第1のマスクを用いて前記磁性層の構成材料層及び前記トンネルバリア層の構成材料層をドライエッチングして、前記磁性層及び前記トンネルバリア層を形成する、請求項1に記載した磁気メモリ装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003303410A JP4483231B2 (ja) | 2003-08-27 | 2003-08-27 | 磁気メモリ装置の製造方法 |
PCT/JP2004/012292 WO2005022622A1 (ja) | 2003-08-27 | 2004-08-26 | ドライエッチング方法および磁気メモリ装置の製造方法 |
EP04772248A EP1667215A4 (en) | 2003-08-27 | 2004-08-26 | DRY ETCHING METHOD AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE |
US10/568,960 US7473646B2 (en) | 2003-08-27 | 2004-08-26 | Dry etching method and production method of magnetic memory device |
TW093125895A TWI392013B (zh) | 2003-08-27 | 2004-08-27 | Dry etching method and manufacturing method of magnetic memory device |
US12/153,848 US7808026B2 (en) | 2003-08-27 | 2008-05-27 | Dry etching method and production method of magnetic memory device |
Applications Claiming Priority (1)
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JP2003303410A JP4483231B2 (ja) | 2003-08-27 | 2003-08-27 | 磁気メモリ装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005072491A JP2005072491A (ja) | 2005-03-17 |
JP4483231B2 true JP4483231B2 (ja) | 2010-06-16 |
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JP2003303410A Expired - Fee Related JP4483231B2 (ja) | 2003-08-27 | 2003-08-27 | 磁気メモリ装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7473646B2 (ja) |
EP (1) | EP1667215A4 (ja) |
JP (1) | JP4483231B2 (ja) |
TW (1) | TWI392013B (ja) |
WO (1) | WO2005022622A1 (ja) |
Families Citing this family (17)
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JP4483231B2 (ja) * | 2003-08-27 | 2010-06-16 | ソニー株式会社 | 磁気メモリ装置の製造方法 |
JP4653470B2 (ja) * | 2004-12-02 | 2011-03-16 | 株式会社アルバック | エッチング方法 |
WO2006100779A1 (ja) * | 2005-03-24 | 2006-09-28 | Fujitsu Limited | 磁気メモリ装置及びその製造方法 |
JP4769002B2 (ja) * | 2005-03-28 | 2011-09-07 | 株式会社アルバック | エッチング方法 |
JP4995455B2 (ja) * | 2005-11-30 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7456030B1 (en) * | 2007-10-11 | 2008-11-25 | National Semiconductor Corporation | Electroforming technique for the formation of high frequency performance ferromagnetic films |
US8455267B2 (en) * | 2009-05-14 | 2013-06-04 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
JP5461148B2 (ja) * | 2009-11-05 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法及び装置 |
JP5740281B2 (ja) * | 2011-10-20 | 2015-06-24 | 東京エレクトロン株式会社 | 金属膜のドライエッチング方法 |
KR101881750B1 (ko) | 2012-02-29 | 2018-07-25 | 삼성전자주식회사 | 정보 저장 소자 및 그 제조 방법 |
GB2526456B (en) * | 2013-03-15 | 2020-07-15 | Intel Corp | Logic chip including embedded magnetic tunnel junctions |
CN103267955B (zh) * | 2013-05-28 | 2016-07-27 | 江苏多维科技有限公司 | 单芯片桥式磁场传感器 |
JP6294971B2 (ja) * | 2014-09-03 | 2018-03-14 | 株式会社日立製作所 | 半導体集積回路装置 |
JP6519364B2 (ja) * | 2015-07-06 | 2019-05-29 | 株式会社デンソー | 金属パターンの製造方法 |
US10032828B2 (en) | 2016-07-01 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor memory device and method for fabricating the same |
US10347486B1 (en) | 2017-12-19 | 2019-07-09 | International Business Machines Corporation | Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography |
US10692759B2 (en) * | 2018-07-17 | 2020-06-23 | Applied Materials, Inc. | Methods for manufacturing an interconnect structure for semiconductor devices |
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-
2003
- 2003-08-27 JP JP2003303410A patent/JP4483231B2/ja not_active Expired - Fee Related
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2004
- 2004-08-26 WO PCT/JP2004/012292 patent/WO2005022622A1/ja active Application Filing
- 2004-08-26 US US10/568,960 patent/US7473646B2/en not_active Expired - Fee Related
- 2004-08-26 EP EP04772248A patent/EP1667215A4/en not_active Withdrawn
- 2004-08-27 TW TW093125895A patent/TWI392013B/zh not_active IP Right Cessation
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2008
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TWI392013B (zh) | 2013-04-01 |
WO2005022622A1 (ja) | 2005-03-10 |
US7808026B2 (en) | 2010-10-05 |
JP2005072491A (ja) | 2005-03-17 |
US20070026681A1 (en) | 2007-02-01 |
WO2005022622A9 (ja) | 2006-04-13 |
TW200522199A (en) | 2005-07-01 |
US20080286883A1 (en) | 2008-11-20 |
EP1667215A4 (en) | 2010-02-24 |
US7473646B2 (en) | 2009-01-06 |
EP1667215A1 (en) | 2006-06-07 |
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