KR101881750B1 - 정보 저장 소자 및 그 제조 방법 - Google Patents

정보 저장 소자 및 그 제조 방법 Download PDF

Info

Publication number
KR101881750B1
KR101881750B1 KR1020120021056A KR20120021056A KR101881750B1 KR 101881750 B1 KR101881750 B1 KR 101881750B1 KR 1020120021056 A KR1020120021056 A KR 1020120021056A KR 20120021056 A KR20120021056 A KR 20120021056A KR 101881750 B1 KR101881750 B1 KR 101881750B1
Authority
KR
South Korea
Prior art keywords
manufacturing
same
data storage
storage devices
devices
Prior art date
Application number
KR1020120021056A
Other languages
English (en)
Other versions
KR20130099494A (ko
Inventor
이길호
김기준
박세웅
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020120021056A priority Critical patent/KR101881750B1/ko
Priority to US13/686,212 priority patent/US8872270B2/en
Publication of KR20130099494A publication Critical patent/KR20130099494A/ko
Priority to US14/498,465 priority patent/US9246083B2/en
Application granted granted Critical
Publication of KR101881750B1 publication Critical patent/KR101881750B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020120021056A 2012-02-29 2012-02-29 정보 저장 소자 및 그 제조 방법 KR101881750B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020120021056A KR101881750B1 (ko) 2012-02-29 2012-02-29 정보 저장 소자 및 그 제조 방법
US13/686,212 US8872270B2 (en) 2012-02-29 2012-11-27 Memory devices
US14/498,465 US9246083B2 (en) 2012-02-29 2014-09-26 Memory devices and methods of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120021056A KR101881750B1 (ko) 2012-02-29 2012-02-29 정보 저장 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20130099494A KR20130099494A (ko) 2013-09-06
KR101881750B1 true KR101881750B1 (ko) 2018-07-25

Family

ID=49001895

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120021056A KR101881750B1 (ko) 2012-02-29 2012-02-29 정보 저장 소자 및 그 제조 방법

Country Status (2)

Country Link
US (2) US8872270B2 (ko)
KR (1) KR101881750B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102087078B1 (ko) * 2013-11-04 2020-03-10 삼성전자주식회사 반도체 소자
KR20150110999A (ko) 2014-03-24 2015-10-05 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
JP6710568B2 (ja) * 2016-04-18 2020-06-17 トヨタ紡織株式会社 車両内装用表皮材
KR20170125177A (ko) * 2016-05-03 2017-11-14 삼성전자주식회사 정보 저장 소자 및 그 제조방법
US11264559B2 (en) 2019-01-30 2022-03-01 International Business Machines Corporation Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
US11716859B2 (en) * 2021-05-13 2023-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, semiconductor device, and method of fabricating semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098167A (ja) * 1996-09-20 1998-04-14 Nippon Steel Corp 半導体記憶装置及びその製造方法
US20020135018A1 (en) * 2001-03-23 2002-09-26 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device writing data of a plurality of bits in parallel
US20090072289A1 (en) * 2007-09-18 2009-03-19 Dae-Ik Kim Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
US20090302472A1 (en) * 2008-06-05 2009-12-10 Samsung Electronics Co., Ltd. Non-volatile memory devices including shared bit lines and methods of fabricating the same
KR20110092514A (ko) * 2010-02-09 2011-08-18 삼성전자주식회사 비트 라인 배선이 비트 라인 콘택 상에서 그 폭이 확장되고 그 레벨이 낮아지는 반도체 소자 및 그 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0135803B1 (ko) * 1994-05-13 1998-04-24 김광호 상.하로 분리된 커패시터를 갖는 반도체 메모리장치 및 그 제조방법
US6528888B2 (en) * 1997-11-14 2003-03-04 Texas Instruments Incorporated Integrated circuit and method
KR100359781B1 (ko) 2000-11-23 2002-11-04 주식회사 하이닉스반도체 엠엠엘（ｍｍｌ） 반도체 소자의 제조방법
JP3892736B2 (ja) 2001-03-29 2007-03-14 株式会社東芝 半導体記憶装置
KR100386455B1 (ko) 2001-06-30 2003-06-02 주식회사 하이닉스반도체 복합 반도체 메모리소자의 제조방법
JP4618989B2 (ja) 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
JP4454944B2 (ja) 2003-03-04 2010-04-21 キヤノン株式会社 磁気抵抗素子を用いた不揮発の固体磁気メモリの製造方法
JP4483231B2 (ja) 2003-08-27 2010-06-16 ソニー株式会社 磁気メモリ装置の製造方法
US7539253B2 (en) 2004-09-10 2009-05-26 Intel Corporation Interpolation in channel state feedback
US7291560B2 (en) 2005-08-01 2007-11-06 Infineon Technologies Ag Method of production pitch fractionizations in semiconductor technology
JP5076361B2 (ja) 2006-05-18 2012-11-21 株式会社日立製作所 半導体装置
KR100976682B1 (ko) 2008-04-04 2010-08-18 주식회사 하이닉스반도체 반도체 메모리 소자 및 그 제조 방법
KR20090125378A (ko) 2008-06-02 2009-12-07 삼성전자주식회사 메모리 장치 및 이를 포함하는 데이터 저장 장치
US8461687B2 (en) * 2010-04-06 2013-06-11 Samsung Electronics Co., Ltd. Semiconductor devices including bit line contact plug and buried channel array transistor, and semiconductor modules, electronic circuit boards and electronic systems including the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098167A (ja) * 1996-09-20 1998-04-14 Nippon Steel Corp 半導体記憶装置及びその製造方法
US20020135018A1 (en) * 2001-03-23 2002-09-26 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device writing data of a plurality of bits in parallel
US20090072289A1 (en) * 2007-09-18 2009-03-19 Dae-Ik Kim Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
US20090302472A1 (en) * 2008-06-05 2009-12-10 Samsung Electronics Co., Ltd. Non-volatile memory devices including shared bit lines and methods of fabricating the same
KR20110092514A (ko) * 2010-02-09 2011-08-18 삼성전자주식회사 비트 라인 배선이 비트 라인 콘택 상에서 그 폭이 확장되고 그 레벨이 낮아지는 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
US8872270B2 (en) 2014-10-28
US20150017743A1 (en) 2015-01-15
KR20130099494A (ko) 2013-09-06
US9246083B2 (en) 2016-01-26
US20130221417A1 (en) 2013-08-29

Similar Documents

Publication Publication Date Title
EP3039563A4 (en) Multi display method, storage medium, and electronic device
EP3080742A4 (en) Customizable secure data exchange environment
TWI561148B (en) Housing and method for manufacturing the same
EP3087599A4 (en) Package on package architecture and method for making
EP2725764A4 (en) DATA STORAGE METHOD AND DATA STORAGE DEVICE
EP2767880A4 (en) METHOD AND DEVICE FOR STORING DATA
EP3056391A4 (en) Crush box and method for manufacturing same
EP3053854A4 (en) Storage warehouse
EP3049227A4 (en) Method for manufacturing an electromechanical structure and an arrangement for carrying out the method
EP3048058A4 (en) Heat-molded container and method for manufacturing same
EP2915088B8 (en) Device and method for secure memory access
GB2515709B (en) Systems and methods for preventing data loss
EP2824893A4 (en) DATA STORAGE METHOD AND DEVICE
EP2866291B8 (en) Battery system and method for manufacturing battery system
EP2706468A4 (en) METHOD FOR STORING AND INTERROGATION OF DATA
EP3358640A4 (en) Electricity storage device and method for manufacturing electricity storage device
EP3089315A4 (en) Electricity storage system and electricity storage method
EP2925089B8 (en) Substrate for flexible devices and method for producing the same
EP3008731A4 (en) Memory devices and memory operational methods
EP3074977A4 (en) Method and system for optical data storage
EP3089312A4 (en) Electricity storage system and electricity storage method
EP3025550A4 (en) Methods and devices for cell selection
EP3025750A4 (en) Catheter and method for manufacturing same
EP3022847A4 (en) Portable terminal and method for providing information using the same
EP3037815A4 (en) High-density microchamber array and manufacturing method for same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant