JP2007043205A - Cvdチャンバのクリーニング方法 - Google Patents
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Abstract
【解決手段】遠隔プラズマ放電チャンバを通じて与えられるクリーニングガスを使って化学気相成長(CVD)反応チャンバをクリーニングするための方法は、1500Wから3000Wで300kHzから500kHzの高周波エネルギーを印加することによって遠隔プラズマ放電チャンバ内のクリーニングガスを解離する工程と、配管を通じて遠隔プラズマ放電チャンバから反応チャンバへ0.5slmから1.5slmの流量で活性種を供給する工程と、から成る。
【選択図】図1
Description
先に議論された従来の遠隔プラズマソース技術は以下の問題を引き起こす。
本発明に従うCVD装置は以下の実施例を含みかつ上記問題を解決する。
主たる構造
第1の実施例は図1を参照して説明される。
この実施例に従って遠隔プラズマ放電チャンバ13が反応チャンバ2から離れて与えられる。遠隔プラズマ放電チャンバ13は陽極酸化されたアルミニウム合金から成る。遠隔プラズマ放電チャンバ13は配管14を通じて反応チャンバ内でシャワーヘッド4に連結される。配管14の中央に、バルブ15が与えられる。好適には配管14の内面はフッ素不動態化ステンレススチールから成るが、フッ素不動態化アルミニウム若しくはアルミニウム合金が使用されてもよい。同様に、バルブ15の内面もフッ素不動態化アルミニウム合金から成る。配管14の一端はクリーニングガスを流入させるためのクリーニングガス入口ポート12を構成し、また他端はクリーニングガスをシャワーヘッド4に導入するためのクリーニングガス出口ポート16を構成する。
この実施例に従ってプラズマCVD装置の動作が説明される。動作は大雑把に2つのシーケンスに分割される。(1)半導体ウエハ9上に薄膜を形成する薄膜形成シーケンス、及び(2)反応チャンバの内側面をクリーニングするクリーニングシーケンスである。薄膜形成シーケンスは例として半導体ウエハ9上にシリコン酸化膜を形成するよう示される。
クリーニングガスとして使用されるNF3とアルゴンの混合ガスはクリーニングガス入口ポート12へ指定された流量で与えられ、遠隔プラズマ放電チャンバ13内に導入される。フッ素含有ガスに対する好適流量は約0.1slmと5.0slmの間であり、キャリアガスに対する好適流量は約0.5slmと10slmの間である。好ましくは、不活性キャリアガスはフッ素含有ガスの約2から3倍である。遠隔プラズマ放電チャンバ13内で300kHzから500kHzの高周波出力が1000Wから5000Wの電力でクリーニングガスへ印加される。このエネルギーをもって、クリーニングガスは解離されかつ与えられた効率で活性化され、フッ素活性種が生成される。
構造
図2は本発明に従う他の実施例を示す。図1のプラズマCVD装置1と異なり、図2のプラズマCVD装置30は、遠隔プラズマ放電チャンバ13とガス出口ポート32との間に配置された接合部31において、反応コンジット11と配管14との連結を含む。反応ガス及びクリーニングガスは接合部31で混合されひとつのガス入口ポート32からシャワーヘッド4へ導入される。他は装置30は図1の装置1と同様である。
主たる構造
図3はこの実施例に従うプラズマCVD装置の好適実行例の断面略示図を示す。半導体ウエハ9若しくは他の基板上に薄膜を形成するのに使用されるプラズマCVD装置1は、反応チャンバ2、半導体ウエハ9を載置するための反応チャンバ内に与えられる支持体3、該支持体3に面して配置され半導体ウエハ9上に反応ガスを均一に噴射するのに使用されるシャワーヘッド4、反応チャンバ2の内部を排気するための出口20から成る。遠隔プラズマ放電チャンバ13は反応チャンバ2から離れて配置され、配管14及びバルブ15を介してシャワーヘッド4に連結される。遠隔プラズマ放電チャンバ13は指定された周波数の無線周波数発振出力エネルギーを使用して活性種を生成するという特長を有する。
本実施例の遠隔プラズマ放電チャンバ13は反応チャンバ2から離れて配置されている。遠隔プラズマ放電チャンバ13は300kHz〜500kHzの無線周波数範囲の周波数を使用する高周波電気放電装置である。先に説明したような遠隔プラズマ放電チャンバの周波数として約2.45GHzのマイクロ波を使用することは所望されない。なぜならばそれは容易に劣化する電気放電チャンバを要求するからである。さらに、もし1MHzから27MHzまでの範囲の周波数が使用されると、安定したプラズマ放電を実現するために無線周波数発信機と遠隔プラズマ放電チャンバとの間に自動整合トランスが取り付けられなければならない。この自動整合トランスはコストを増加させる。同時に、それは遠隔プラズマ放電チャンバ及び自動整合トランスを反応チャンバ付近に取り付けることを要求し、半導体処理装置全体のサイズの増大及び機械間スペースの減少によってメンテナンス作業を困難にするため、所望されない。300kHz〜500kHzの周波数範囲は効率的にクリーニングガスの活性化を可能にし、プラズマ放電チャンバを容易に劣化しない材料から作ることを可能にし、よりコンパクトな装置を実現する。より安定なプラズマ放電を実現するために350kHz〜450kHzの範囲が好適であるが、400kHz〜430kHzの範囲がより好適である。
図4において、本実施例で使用されるバルブ15の断面図が示される。図4(a)はバルブ15の閉止状態を示し、一方図4(b)はバルブ15の開放状態を示す。バルブ15はアルミニウム若しくはアルミニウム合金から成るボディ24から成る。バルブボディ30はボルト33によって軸32に固定される。バルブボディ30上に、ボディ34の内部35をシールすることによって気密性を達成するOリング34が設置される。バルブ15の上流開口22において、遠隔プラズマ放電チャンバへ結合されるよう配管14の部分が設置される。下流開口23において、ガス出口ポート7に結合されるよう配管14の部分が設置される。開口23及び22での設置方向は限定されるものではなく状況に応じて変えられてもよい。バルブ15のボディ24に使用される材料はアルミニウム若しくはアルミニウム合金に限定されない。ステンレススチールのような優れた耐食性を有する他の材料が使用されてもよい。バルブボディ30はアルミニウム若しくはアルミニウム合金から成るが、ニッケル、チタン、ステンレススチールのような優れた耐食性金属またはポリイミド樹脂のような優れた耐食性樹脂が使用されてもよい。付加的に、ボルト33及び軸32はアルミニウム、アルミニウム合金、ニッケル及びステンレススチールのような優れた耐食性を有する金属から成る。Oリング34は使用されるガス流によって劣化しない弾性材料から成る。好適にはOリング34はフッ素含有ゴムから成り、さらに好適にはペルフルオロエラストマーから成る。
図3を参照して、本実施例に従うプラズマCVD装置の動作が説明される。上記したように、動作は大雑把に2つのシーケンスに分割される。(1)半導体ウエハ9上への薄膜形成及び(2)反応チャンバの内側のクリーニングである。薄膜形成シーケンスは例として半導体ウエハ9上に酸化珪素を形成するのを参照して説明される。
クリーニングガスとして使用されるNF3とアルゴンの混合ガスが指定された流量に制御され、クリーニングガス入口ポート12から流入し、遠隔プラズマ放電チャンバ13に導入される。フッ素含有ガスとしての好適流量は約0.5slmと1.5slmとの間であり、好適なキャリアガスの流量は約0.5slmと4slmとの間である。好ましくは、不活性キャリアガスはフッ素含有ガスの流量の約2〜3倍である。遠隔プラズマ放電チャンバ13の内部で、300kHzから500kHzの無線周波数(RF)出力が1000Wから5000Wの電力をもってクリーニングガスに印加される。無線周波数出力の値は反応チャンバ2の内部に付着した不所望の生成物が許容できる速度で除去されるように設定される。遠隔プラズマ放電チャンバの長期品質メンテナンスを実現するために、及びフッ素活性種を高効率で生成するために、無線周波数出力範囲の好適範囲は1500Wから3000Wであり、より好適な範囲は2000Wから3000Wである。このエネルギーによって、クリーニングガスは解離されかつフッ素活性種を形成するためにある効率で活性化される。
主たる構造
図5を参照して本発明の第4の実施例に従って化学気相成長(CVD)装置110が示されている。上記された実施例と異なり、図示されたCVDリアクタ110は冷壁反応チャンバ112を含む。図示された実施例において、デポジション若しくは反応チャンバ112はある波長の放射エネルギーを透過する石英から成り、それは以下に説明する加熱システムの説明によって理解できる。
好適装置110はチャンバ112から上流に配置された活性種のソースを含む。図示された実施例の活性種ソースは遠隔プラズマ放電チャンバ13に接続された発電機から成る。遠隔プラズマ放電チャンバ13はバルブ15を有する配管によってデポジションチャンバ112へ結合される。配管14の一端はクリーニングガスが遠隔プラズマ放電チャンバ13内に流入するようクリーニングガス入口ポート12を構成する。配管の他端は、反応チャンバの入口140と出口142との間に画成された水平流路内にクリーニングガスを導入するためのクリーニングガス出口ポート16を構成する。
図5の装置110は、エピタキシャルシリコン、ポリシリコン、酸化珪素及び窒化珪素を含むさまざまな組成の膜をCVDによって蒸着するために使用される。有利なことに、遠隔プラズマ放電チャンバ13はCVD内の反応を補助するための活性反応物質を与え、それによってこのデポジションに必要な熱を下げることができる。
清浄にされるべき材料及びチャンバ内の材料に依存して、上記実施例に関して説明されるように、遠隔プラズマ放電チャンバ13を通じてフッ素活性種が与えられる。あるデポジションに対して、当業者は、塩素活性種及び/または他の活性種が石英チャンバ112壁に過大なダメージを与えることなく蒸着した材料をより効果的に清浄にすることができることを理解する。シリコンデポジションに続く適当なクリーニングガスは、例えば遠隔プラズマ放電チャンバ13を通じて与えられるHCl若しくはNF3/Clを含む。酸化珪素若しくは窒化珪素デポジションに続くクリーニングガスは上記実施例に関して説明されたように、好適にはフッ素含有ガスを含む。
2 反応チャンバ
3 支持体
4 シャワーヘッド
5 ガス入口ポート
6 バルブ
7 ガス出口ポート
8 高周波発信機
9 半導体ウエハ
10 マッチング回路
11 ガスコンジット
12 クリーニングガス入口ポート
13 遠隔プラズマ放電チャンバ
14 配管
15 バルブ
16 クリーニングガス出口ポート
17 配管
18 ゲートバルブ
19 開口
20 出口
21 コンダクタンス制御バルブ
22 CCD検出器
23 観測窓
24 モニター
25 駆動機構
26 加熱エレメント
27 接地
28 調整器
28a 圧力計
29 支持ピストン
Claims (7)
- 遠隔プラズマ放電チャンバを通じて与えられるクリーニングガスを使って化学気相成長(CVD)反応チャンバをクリーニングするための方法であって、
1500Wから3000Wで300kHzから500kHzの高周波エネルギーを印加することによって遠隔プラズマ放電チャンバ内のクリーニングガスを解離する工程と、
配管を通じて遠隔プラズマ放電チャンバから反応チャンバへ0.5slmから1.5slmの流量で活性種を供給する工程と、
から成る方法。 - 請求項1に記載の方法であって、反応チャンバ壁上の付着物は窒化珪素から成る、ところ方法。
- 請求項1に記載の方法であって、クリーニングガスはフッ素含有ガスから成り、また活性種はフッ素活性種から成る、ところの方法。
- 請求項1に記載の方法であって、前記フッ素活性種はNF3である、ところの方法。
- 請求項1に記載の方法であって、さらにCVD反応を実行した後及び活性種を供給する前に配管上にあるバルブを開放する工程を含む、方法。
- 請求項5に記載の方法であって、バルブを開放する工程は、配管の内面と実質的に同じ幅の開口を形成するべく流路から完全にシールエレメントを引っ込める工程から成る、ところの方法。
- 請求項5に記載の方法であって、さらに付着した付着物を除去した後にバルブを閉める工程を含む、方法。
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- 2001-01-18 US US09/764,523 patent/US6736147B2/en not_active Expired - Lifetime
- 2001-01-18 EP EP01300413A patent/EP1118692A1/en not_active Withdrawn
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2004
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2006
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2007
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JP2009152603A (ja) * | 2007-12-18 | 2009-07-09 | Asm Japan Kk | プラズマcvd装置及びその方法 |
JP2010098158A (ja) * | 2008-10-17 | 2010-04-30 | Seiko Epson Corp | プラズマcvd装置用サセプタ及びその製造方法、並びに、プラズマcvd装置、並びにその保守方法、並びに半導体装置の製造方法 |
JP2013062342A (ja) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | 成膜装置のクリーニング方法 |
WO2020166823A1 (ko) * | 2019-02-13 | 2020-08-20 | 프리시스 주식회사 | 밸브모듈 및 이를 포함하는 기판처리장치 |
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US20070227554A1 (en) | 2007-10-04 |
JP4417362B2 (ja) | 2010-02-17 |
EP1118692A1 (en) | 2001-07-25 |
JP3902408B2 (ja) | 2007-04-04 |
KR100767762B1 (ko) | 2007-10-17 |
JP2001274105A (ja) | 2001-10-05 |
US20040144400A1 (en) | 2004-07-29 |
US20040144489A1 (en) | 2004-07-29 |
US6736147B2 (en) | 2004-05-18 |
US20020011210A1 (en) | 2002-01-31 |
KR20010076318A (ko) | 2001-08-11 |
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