JP2006509710A5 - - Google Patents

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Publication number
JP2006509710A5
JP2006509710A5 JP2004558483A JP2004558483A JP2006509710A5 JP 2006509710 A5 JP2006509710 A5 JP 2006509710A5 JP 2004558483 A JP2004558483 A JP 2004558483A JP 2004558483 A JP2004558483 A JP 2004558483A JP 2006509710 A5 JP2006509710 A5 JP 2006509710A5
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JP
Japan
Prior art keywords
substrate
layer
nitride
optoelectronics
manufacturing
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JP2004558483A
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Japanese (ja)
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JP4860927B2 (ja
JP2006509710A (ja
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Priority claimed from PL357707A external-priority patent/PL225424B1/pl
Priority claimed from PL02357708A external-priority patent/PL357708A1/xx
Priority claimed from PL357696A external-priority patent/PL225423B1/pl
Priority claimed from PL357709A external-priority patent/PL225425B1/pl
Application filed filed Critical
Priority claimed from PCT/JP2003/015906 external-priority patent/WO2004053210A1/en
Publication of JP2006509710A publication Critical patent/JP2006509710A/ja
Publication of JP2006509710A5 publication Critical patent/JP2006509710A5/ja
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Publication of JP4860927B2 publication Critical patent/JP4860927B2/ja
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JP2004558483A 2002-12-11 2003-12-11 エピタキシ用基板及びその製造方法 Expired - Fee Related JP4860927B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
PLP-357696 2002-12-11
PLP-357708 2002-12-11
PL357707A PL225424B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PL357696A PL225423B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357707 2002-12-11
PL357709A PL225425B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357709 2002-12-11
PCT/JP2003/015906 WO2004053210A1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same

Publications (3)

Publication Number Publication Date
JP2006509710A JP2006509710A (ja) 2006-03-23
JP2006509710A5 true JP2006509710A5 (enExample) 2007-02-01
JP4860927B2 JP4860927B2 (ja) 2012-01-25

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JP2004558483A Expired - Fee Related JP4860927B2 (ja) 2002-12-11 2003-12-11 エピタキシ用基板及びその製造方法
JP2004558482A Expired - Fee Related JP4558502B2 (ja) 2002-12-11 2003-12-11 テンプレート型基板の製造方法

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JP2004558482A Expired - Fee Related JP4558502B2 (ja) 2002-12-11 2003-12-11 テンプレート型基板の製造方法

Country Status (10)

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US (3) US7410539B2 (enExample)
EP (2) EP1576210B1 (enExample)
JP (2) JP4860927B2 (enExample)
KR (2) KR100789889B1 (enExample)
AT (2) ATE457372T1 (enExample)
AU (2) AU2003285768A1 (enExample)
DE (2) DE60331245D1 (enExample)
PL (2) PL224991B1 (enExample)
TW (2) TWI352434B (enExample)
WO (2) WO2004053210A1 (enExample)

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