JP2006502581A - 不揮発性メモリーデバイスおよびそれの形成方法 - Google Patents

不揮発性メモリーデバイスおよびそれの形成方法 Download PDF

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Publication number
JP2006502581A
JP2006502581A JP2004543036A JP2004543036A JP2006502581A JP 2006502581 A JP2006502581 A JP 2006502581A JP 2004543036 A JP2004543036 A JP 2004543036A JP 2004543036 A JP2004543036 A JP 2004543036A JP 2006502581 A JP2006502581 A JP 2006502581A
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region
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well
layer
semiconductor substrate
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JP2004543036A
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JP2006502581A5 (enExample
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チンダロア、ゴーリシャンカー
エイ． インガーソル、ポール
ティ． スウィフト、クレイグ
ビー． ホーフラー、アレクサンダー
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NXP USA Inc
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NXP USA Inc
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Publication of JP2006502581A publication Critical patent/JP2006502581A/ja
Publication of JP2006502581A5 publication Critical patent/JP2006502581A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2004543036A 2002-10-09 2003-09-23 不揮発性メモリーデバイスおよびそれの形成方法 Pending JP2006502581A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/267,153 US6887758B2 (en) 2002-10-09 2002-10-09 Non-volatile memory device and method for forming
PCT/US2003/030588 WO2004034426A2 (en) 2002-10-09 2003-09-23 Non-volatile memory device and method for forming

Publications (2)

Publication Number Publication Date
JP2006502581A true JP2006502581A (ja) 2006-01-19
JP2006502581A5 JP2006502581A5 (enExample) 2006-11-09

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JP2004543036A Pending JP2006502581A (ja) 2002-10-09 2003-09-23 不揮発性メモリーデバイスおよびそれの形成方法

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US (1) US6887758B2 (enExample)
JP (1) JP2006502581A (enExample)
KR (1) KR20050055003A (enExample)
CN (2) CN100420036C (enExample)
AU (1) AU2003277017A1 (enExample)
TW (1) TWI322498B (enExample)
WO (1) WO2004034426A2 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
JP2006165451A (ja) * 2004-12-10 2006-06-22 Renesas Technology Corp 半導体装置及びその製造方法
JP2006216960A (ja) * 2005-02-03 2006-08-17 Seoul National Univ Industry Foundation 複数層のドーピング層を有する電荷トラップメモリセルとこれを利用したメモリアレイ及びその動作方法
JP2007103424A (ja) * 2005-09-30 2007-04-19 Oki Electric Ind Co Ltd メモリセル及びそのメモリセルを有する半導体不揮発性メモリの構造。
JP2007227585A (ja) * 2006-02-23 2007-09-06 Renesas Technology Corp 半導体装置およびその製造方法
JP2008060466A (ja) * 2006-09-01 2008-03-13 Denso Corp 不揮発性半導体記憶装置、そのデータ消去方法、その消去判定方法
JP2009094297A (ja) * 2007-10-09 2009-04-30 Genusion:Kk 不揮発性半導体記憶装置およびその製造方法

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US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US7151292B1 (en) * 2003-01-15 2006-12-19 Spansion Llc Dielectric memory cell structure with counter doped channel region
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
JP3845073B2 (ja) * 2003-05-27 2006-11-15 株式会社東芝 半導体装置
US7119393B1 (en) * 2003-07-28 2006-10-10 Actel Corporation Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit
KR100526478B1 (ko) * 2003-12-31 2005-11-08 동부아남반도체 주식회사 반도체 소자 및 그 제조방법
US20050145924A1 (en) * 2004-01-07 2005-07-07 I-Sheng Liu Source/drain adjust implant
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KR100607173B1 (ko) * 2004-02-20 2006-08-01 삼성전자주식회사 산화물 전하 저장층을 갖는 비휘발성 메모리 소자
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
KR100672121B1 (ko) 2005-01-12 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그것의 프로그램/판독 방법
US7253054B2 (en) * 2005-02-16 2007-08-07 Texas Instruments Incorporated One time programmable EPROM for advanced CMOS technology
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7602009B2 (en) * 2005-06-16 2009-10-13 Micron Technology, Inc. Erasable non-volatile memory device using hole trapping in high-K dielectrics
WO2007008173A1 (en) * 2005-07-07 2007-01-18 National University Of Singapore Semiconductor structure for transistors with enhanced subthreshold swing and methods of manufacture thereof
US20070007578A1 (en) * 2005-07-07 2007-01-11 Li Chi N B Sub zero spacer for shallow MDD junction to improve BVDSS in NVM bitcell
KR100669089B1 (ko) * 2005-07-11 2007-01-16 삼성전자주식회사 게이트 구조물, 이를 갖는 소노스 타입의 비휘발성 메모리장치 및 그 제조 방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7575978B2 (en) * 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US7476927B2 (en) 2005-08-24 2009-01-13 Micron Technology, Inc. Scalable multi-functional and multi-level nano-crystal non-volatile memory device
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
KR100719219B1 (ko) * 2005-09-20 2007-05-16 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7456465B2 (en) * 2005-09-30 2008-11-25 Freescale Semiconductor, Inc. Split gate memory cell and method therefor
JP4592580B2 (ja) * 2005-12-19 2010-12-01 株式会社東芝 不揮発性半導体記憶装置
US20070158734A1 (en) * 2006-01-09 2007-07-12 Freescale Semiconductor, Inc. Electronic device with a multi-gated electrode structure and a process for forming the electronic device
US20070278557A1 (en) * 2006-05-31 2007-12-06 Texas Instruments Incorporated Novel method to form memory cells to improve programming performance of embedded memory technology
JP2008166437A (ja) 2006-12-27 2008-07-17 Spansion Llc 半導体装置、その制御方法およびその製造方法
US7763511B2 (en) * 2006-12-29 2010-07-27 Intel Corporation Dielectric barrier for nanocrystals
US7416945B1 (en) * 2007-02-19 2008-08-26 Freescale Semiconductor, Inc. Method for forming a split gate memory device
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US8492826B2 (en) * 2007-10-09 2013-07-23 Genusion, Inc. Non-volatile semiconductor memory device and manufacturing method thereof
US20090189212A1 (en) * 2008-01-30 2009-07-30 Spansion Llc Electronic device having a doped region with a group 13 atom
JP2009182089A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 半導体装置の製造方法
US20090211535A1 (en) * 2008-02-26 2009-08-27 Santana Richard A Pet cage sanitary device
KR100967644B1 (ko) * 2008-06-09 2010-07-07 주식회사 동부하이텍 비휘발성 메모리 소자 및 그 제조 방법
US8389369B2 (en) * 2010-02-08 2013-03-05 Semiconductor Components Industries, Llc Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same
US8298886B2 (en) * 2010-02-08 2012-10-30 Semiconductor Components Industries, Llc Electronic device including doped regions between channel and drain regions and a process of forming the same
US20110195553A1 (en) * 2010-02-08 2011-08-11 Chun-Yu Chou Method of fabricating semiconductor device
TWI426567B (zh) * 2010-03-03 2014-02-11 Himax Tech Ltd 製造半導體裝置的方法
JP2011210901A (ja) * 2010-03-29 2011-10-20 Seiko Instruments Inc デプレッション型ｍｏｓトランジスタ
CN102760773B (zh) * 2011-04-28 2014-12-10 上海华虹宏力半导体制造有限公司 Nvm器件及其制造方法
US8829588B2 (en) * 2011-07-26 2014-09-09 Synopsys, Inc. NVM bitcell with a replacement control gate and additional floating gate
CN102931140B (zh) * 2011-08-09 2017-09-12 长沙艾尔丰华电子科技有限公司 一种非自对准工艺形成的半导体器件及其方法
KR102114237B1 (ko) * 2014-01-20 2020-05-25 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
US10559469B2 (en) * 2014-04-22 2020-02-11 Texas Instruments Incorporated Dual pocket approach in PFETs with embedded SI-GE source/drain
CN104882378B (zh) * 2015-04-09 2017-12-15 北京空间飞行器总体设计部 一种基于氧等离子体工艺的纳米介质层制备方法
CN104900485B (zh) * 2015-04-09 2017-11-07 北京空间飞行器总体设计部 一种基于热氧化工艺的纳米介质层制备方法
US9450052B1 (en) * 2015-07-01 2016-09-20 Chengdu Monolithic Power Systems Co., Ltd. EEPROM memory cell with a coupler region and method of making the same
US9716146B2 (en) 2015-12-15 2017-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method with solid phase diffusion
US10510835B2 (en) * 2018-04-27 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with low random telegraph signal noise
CN109065543B (zh) * 2018-07-27 2021-10-19 上海华力微电子有限公司 改善n型sonos器件阈值电压均一性的方法
CN109166804B (zh) * 2018-08-29 2021-08-20 上海华虹宏力半导体制造有限公司 零阈值电压nmos的制备方法
CN112908854A (zh) * 2021-01-28 2021-06-04 上海华力集成电路制造有限公司 一种降低n管短沟道组件穿通效应以及组件变异的方法

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JPS62101068A (ja) * 1985-10-28 1987-05-11 Hitachi Ltd 半導体集積回路装置
JPS62287669A (ja) * 1986-06-06 1987-12-14 Hitachi Ltd 半導体集積回路装置の製造方法
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JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
JP2006165451A (ja) * 2004-12-10 2006-06-22 Renesas Technology Corp 半導体装置及びその製造方法
JP2006216960A (ja) * 2005-02-03 2006-08-17 Seoul National Univ Industry Foundation 複数層のドーピング層を有する電荷トラップメモリセルとこれを利用したメモリアレイ及びその動作方法
JP2007103424A (ja) * 2005-09-30 2007-04-19 Oki Electric Ind Co Ltd メモリセル及びそのメモリセルを有する半導体不揮発性メモリの構造。
JP2007227585A (ja) * 2006-02-23 2007-09-06 Renesas Technology Corp 半導体装置およびその製造方法
JP2008060466A (ja) * 2006-09-01 2008-03-13 Denso Corp 不揮発性半導体記憶装置、そのデータ消去方法、その消去判定方法
JP2009094297A (ja) * 2007-10-09 2009-04-30 Genusion:Kk 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
TWI322498B (en) 2010-03-21
AU2003277017A1 (en) 2004-05-04
TW200427071A (en) 2004-12-01
US6887758B2 (en) 2005-05-03
CN1689165A (zh) 2005-10-26
WO2004034426A3 (en) 2004-08-12
KR20050055003A (ko) 2005-06-10
CN101197292A (zh) 2008-06-11
CN101197292B (zh) 2010-06-23
US20040070030A1 (en) 2004-04-15
WO2004034426A2 (en) 2004-04-22
AU2003277017A8 (en) 2004-05-04
CN100420036C (zh) 2008-09-17

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