AU2003277017A1 - Non-volatile memory device and method for forming - Google Patents

Non-volatile memory device and method for forming

Info

Publication number
AU2003277017A1
AU2003277017A1 AU2003277017A AU2003277017A AU2003277017A1 AU 2003277017 A1 AU2003277017 A1 AU 2003277017A1 AU 2003277017 A AU2003277017 A AU 2003277017A AU 2003277017 A AU2003277017 A AU 2003277017A AU 2003277017 A1 AU2003277017 A1 AU 2003277017A1
Authority
AU
Australia
Prior art keywords
forming
memory device
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003277017A
Other languages
English (en)
Other versions
AU2003277017A8 (en
Inventor
Gowrishankar Chindalore
Alexander B. Hoefler
Paul A. Ingersoll
Craig T. Swift
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003277017A1 publication Critical patent/AU2003277017A1/en
Publication of AU2003277017A8 publication Critical patent/AU2003277017A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
AU2003277017A 2002-10-09 2003-09-23 Non-volatile memory device and method for forming Abandoned AU2003277017A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/267,153 US6887758B2 (en) 2002-10-09 2002-10-09 Non-volatile memory device and method for forming
US10/267,153 2002-10-09
PCT/US2003/030588 WO2004034426A2 (en) 2002-10-09 2003-09-23 Non-volatile memory device and method for forming

Publications (2)

Publication Number Publication Date
AU2003277017A1 true AU2003277017A1 (en) 2004-05-04
AU2003277017A8 AU2003277017A8 (en) 2004-05-04

Family

ID=32068349

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003277017A Abandoned AU2003277017A1 (en) 2002-10-09 2003-09-23 Non-volatile memory device and method for forming

Country Status (7)

Country Link
US (1) US6887758B2 (enExample)
JP (1) JP2006502581A (enExample)
KR (1) KR20050055003A (enExample)
CN (2) CN100420036C (enExample)
AU (1) AU2003277017A1 (enExample)
TW (1) TWI322498B (enExample)
WO (1) WO2004034426A2 (enExample)

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Also Published As

Publication number Publication date
TWI322498B (en) 2010-03-21
TW200427071A (en) 2004-12-01
US6887758B2 (en) 2005-05-03
CN1689165A (zh) 2005-10-26
WO2004034426A3 (en) 2004-08-12
KR20050055003A (ko) 2005-06-10
CN101197292A (zh) 2008-06-11
CN101197292B (zh) 2010-06-23
US20040070030A1 (en) 2004-04-15
JP2006502581A (ja) 2006-01-19
WO2004034426A2 (en) 2004-04-22
AU2003277017A8 (en) 2004-05-04
CN100420036C (zh) 2008-09-17

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase