AU2003253428A1 - Nonvolatile memory device - Google Patents

Nonvolatile memory device

Info

Publication number
AU2003253428A1
AU2003253428A1 AU2003253428A AU2003253428A AU2003253428A1 AU 2003253428 A1 AU2003253428 A1 AU 2003253428A1 AU 2003253428 A AU2003253428 A AU 2003253428A AU 2003253428 A AU2003253428 A AU 2003253428A AU 2003253428 A1 AU2003253428 A1 AU 2003253428A1
Authority
AU
Australia
Prior art keywords
memory device
nonvolatile memory
nonvolatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003253428A
Inventor
Tadahiko Hirai
Naotake Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of AU2003253428A1 publication Critical patent/AU2003253428A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
AU2003253428A 2002-08-07 2003-08-06 Nonvolatile memory device Abandoned AU2003253428A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002229907 2002-08-07
JP2002-229907 2002-08-07
JP2003201732A JP2004128471A (en) 2002-08-07 2003-07-25 Nonvolatile memory device
JP2003-201732 2003-07-25
PCT/JP2003/010017 WO2004015778A1 (en) 2002-08-07 2003-08-06 Nonvolatile memory device

Publications (1)

Publication Number Publication Date
AU2003253428A1 true AU2003253428A1 (en) 2004-02-25

Family

ID=31719842

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003253428A Abandoned AU2003253428A1 (en) 2002-08-07 2003-08-06 Nonvolatile memory device

Country Status (4)

Country Link
JP (1) JP2004128471A (en)
AU (1) AU2003253428A1 (en)
TW (1) TW200402873A (en)
WO (1) WO2004015778A1 (en)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608855B2 (en) 2004-04-02 2009-10-27 Spansion Llc Polymer dielectrics for memory element array interconnect
DE102004025675B4 (en) * 2004-05-26 2008-02-14 Qimonda Ag Integrated semiconductor memory with organic selection transistor
DE102004025676B4 (en) * 2004-05-26 2008-09-04 Qimonda Ag Integrated semiconductor memory with organic selection transistor
JP2006033809A (en) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd Copy machine with copy control function, scanner and facsimile, semiconductor device contained paper and semiconductor device contained film
WO2005121908A1 (en) * 2004-06-14 2005-12-22 Semiconductor Energy Laboratory Co., Ltd. Copy machine with copy control function, scanner and facsimile, and piece of paper and film each installed with semiconductor device
US8698262B2 (en) 2004-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and manufacturing method of the same
WO2006043573A1 (en) 2004-10-18 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
CN100592520C (en) 2004-10-22 2010-02-24 株式会社半导体能源研究所 Semiconductor device and display device comprising same
WO2006043611A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4809658B2 (en) * 2004-10-29 2011-11-09 株式会社半導体エネルギー研究所 Display device and electronic apparatus using the same
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US9734901B2 (en) 2004-10-29 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device with semiconductor memory cell
KR101187400B1 (en) 2004-11-26 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP4912671B2 (en) * 2004-11-26 2012-04-11 株式会社半導体エネルギー研究所 Semiconductor device
JP4954537B2 (en) * 2004-12-03 2012-06-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2006059554A1 (en) * 2004-12-03 2006-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5025134B2 (en) * 2005-01-21 2012-09-12 株式会社半導体エネルギー研究所 Semiconductor device
WO2006085633A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
US7926726B2 (en) 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
JP5008323B2 (en) * 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 Memory device
TWI475667B (en) 2005-03-28 2015-03-01 Semiconductor Energy Lab Memory device and manufacturing method the same
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7700984B2 (en) 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7688272B2 (en) 2005-05-30 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4932329B2 (en) * 2005-05-31 2012-05-16 株式会社半導体エネルギー研究所 Semiconductor device
US8188461B2 (en) 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7660145B2 (en) 2005-07-01 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
KR101369864B1 (en) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP5019821B2 (en) * 2005-08-12 2012-09-05 株式会社半導体エネルギー研究所 Semiconductor device
JP5157448B2 (en) * 2005-10-19 2013-03-06 富士通株式会社 Resistance memory element and nonvolatile semiconductor memory device
EP1946374A4 (en) 2005-11-09 2014-01-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7566899B2 (en) * 2005-12-21 2009-07-28 Palo Alto Research Center Incorporated Organic thin-film transistor backplane with multi-layer contact structures and data lines
EP1850378A3 (en) 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
JP5137453B2 (en) * 2006-04-28 2013-02-06 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7719001B2 (en) 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
WO2008041716A1 (en) 2006-10-04 2008-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101441348B1 (en) 2006-10-24 2014-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device including storage device and method for driving the same
KR101416876B1 (en) 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US7988057B2 (en) 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US7994607B2 (en) 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP5525694B2 (en) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
KR101234598B1 (en) * 2011-02-28 2013-02-19 한국전자통신연구원 Read/write apparatus and method of rom cell using organic thin film transistor
KR101361690B1 (en) * 2011-07-26 2014-02-12 광주과학기술원 Switching device and resistance variable memory device using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3170101B2 (en) * 1993-04-15 2001-05-28 株式会社東芝 Semiconductor device and manufacturing method thereof
JP3559580B2 (en) * 1993-12-17 2004-09-02 財団法人国際科学振興財団 Semiconductor device
US6385407B1 (en) * 1998-12-28 2002-05-07 Hitachi Maxell, Ltd. Accommodating enclosure and management system
KR20020030272A (en) * 2000-03-28 2002-04-24 롤페스 요하네스 게라투스 알베르투스 Integrated circuit with programmable memory element

Also Published As

Publication number Publication date
JP2004128471A (en) 2004-04-22
WO2004015778A1 (en) 2004-02-19
TW200402873A (en) 2004-02-16

Similar Documents

Publication Publication Date Title
AU2003253428A1 (en) Nonvolatile memory device
GB2418535B (en) Non-volatile memory device
AU2003201760A1 (en) Phase-change memory device
EP1416540B8 (en) Semiconductor nonvolatile memory device
AU2002354082A1 (en) Nonvolatile memory
AU2003277017A1 (en) Non-volatile memory device and method for forming
EP1554732B8 (en) Highly compact non-volatile memory and method thereof
AU2002366471A1 (en) Non-volatile memory
SG107641A1 (en) Memory storage device
AU2002358302A1 (en) Programming non-volatile memory devices
AU2002353406A1 (en) Nonvolatile memory unit with specific cache
AU2003235106A1 (en) Semiconductor memory
AU2003265062A1 (en) Programmable magnetic memory device
AU2002367495A1 (en) External storage device
SG113506A1 (en) Nonvolatile semiconductor memory device
SG108925A1 (en) Non-volatile memory cells
AU2003241803A1 (en) Ferroelectric memory
AU2003225890A1 (en) Enhanced memory management for portable devices
GB2424518B (en) Flash memory device
AU2003265087A1 (en) Programmable magnetic memory device fp-mram
AU2003228833A1 (en) Pseudo-nonvolatile direct-tunneling floating-gate device
AU2002219607A1 (en) Storage device
IL153285A0 (en) Non-volatile memory device with multiple ports
TW556905U (en) Memory card adapting device
AU2003227363A1 (en) Semiconductor memory

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase