JP2006173250A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2006173250A JP2006173250A JP2004361477A JP2004361477A JP2006173250A JP 2006173250 A JP2006173250 A JP 2006173250A JP 2004361477 A JP2004361477 A JP 2004361477A JP 2004361477 A JP2004361477 A JP 2004361477A JP 2006173250 A JP2006173250 A JP 2006173250A
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- external output
- bump
- semiconductor element
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- semiconductor device
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Abstract
【解決手段】 SiCチップ9には、複数個のショットキーバリアダイオードのユニット10が形成され、各ユニット10は独立した外部出力電極4を持っている。SiCチップ9に形成されたユニット10のうち良品ユニットの外部出力電極4のみに、バンプ11(直径が数10〜数100μm)が形成され、耐圧がなかったりリーク電流が多かったりする不良品ユニットの外部出力電極4の上にはバンプは形成されていない。不良品ユニットにはバンプが形成されていないので、ショットキーバリア側電極3は外部出力電極4からバンプ11、配線基板12の配線層13、外部リード13aへと外部と並列接続され、良品のユニット10の外部出力電極4のみが並列に接続されている。
【選択図】 図1
Description
そこで、SiCウエハ内に、ある程度の歩留まりが確保できる面積で、複数個の例えばショットキーダイオード等の半導体素子ユニット(以下、単にユニットという。)を形成し、上記複数のユニットで一つのSiCチップを構成するように分割加工する。上記SiCチップには上記ユニットのショットキーバリア電極に達する開口を有する絶縁層が設けられ、上記複数のユニットにおける不良品のユニットのショットキーバリア電極は塗布された絶縁物により絶縁され、上記絶縁層を介して設けた金属層が上記ユニットの外部出力電極および配線層となって、良品のユニットのショトキーバリア電極のみを並列に接続し、欠陥の多いSiCウエハでも大容量の半導体装置を歩留まり良く得ようとするものがある(例えば、特許文献1参照)。
しかしながら、SiCチップに上記のように厚膜の絶縁層と配線層を設けるため、機械的および熱的ストレスが大きくなり上記SiCウエハのそりが大きくなって半導体装置の製造が困難になったり、また、半導体装置の信頼性が低下するという問題点があった。
また、一般的に、シリコンウエハを用いた半導体装置の製造において、ウエハにおける成膜や加工は微細化の観点から、数μm以下の成膜と加工が可能なように製造装置が最適化されているため、上記のように配線層と絶縁膜の厚さを増加させることが困難になるという問題点があった。
図1は本発明の実施の形態1の半導体装置の断面図であり、半導体チップであるSiCチップ9には、半導体素子ユニットであるショットキーバリアダイオードのユニット10が複数個形成され、各ユニット10は独立した外部出力電極4を持っている。
SiCチップ9に形成されたユニット10のうち良品ユニットの外部出力電極4のみに、例えば溶融金属(Sn−Pb、Sn−Ag、Sn−Cu、Sn−Bi、Sn−Ag−Cu、Sn−Ag−Bi、Sn−Ag−Bi−Cu、Au−Sn等をさす。)からなる直径が数10〜数100μmのバンプ11が形成され、耐圧が不足していたり、リーク電流が大きかったりする不良品ユニットの外部出力電極4の上にはバンプは形成されていない。そして、不良品ユニットにはバンプが形成されていないので、ショットキーバリア側電極3は外部出力電極4からバンプ11、配線基板12の配線層13、外部リード13aへと外部と並列接続され、良品のユニット10の外部出力電極4のみが並列に接続されている。
配線基板12とSiCチップ9のギャップはアンダーフィル樹脂19で充填され、SiCチップ9は溶融金属のペーストからなるダイボンド材18でパッケージ基板16に固定されている。SiCチップ9の裏面電極6は上記溶融金属がなじみやすいように最表面はAu膜になっており、パッケージ基板16の配線層17に上記ダイボンド材18を塗布し、その上にSiCチップ9をのせて上記溶融金属の溶融温度まで加熱して冷却すれば上記溶融金属のペーストが固化し、SiCチップ9はパッケージ基板16に固定されるとともに裏面電極6がパッケージ基板16の配線層17と電気的に接続される。配線層17は外部リード17aにつながり、外部リード17aが良品のユニット10のショトッキーバリアダイオード素子の共通の半導体側電極の出力となる。
つまり、半導体ウエハとしてn+型SiCウエハ1a上にn型SiCエピタキシャル層2を堆積し、次に、例えばTiやNiなどの金属を数100nm成膜し加工することにより複数個のショットキーバリア電極3を形成して、上記SiCウエハ1aに複数個のユニット10を形成する。上記ショットキーバリア電極3上に例えばAlを1μm程度成膜して加工することにより外部出力電極4を形成する。バンプの溶融金属がなじみやすいように外部出力電極の最表面をAu膜にする場合は、さらにCr−Ni−Auなどを成膜する。
さらに、例えばポリイミド膜を数μm程度成膜して、外部出力電極4の一部のみ開口した保護膜5とし、n+型SiCウエハ1aの裏面は例えばニッケルと金を成膜して裏面電極6とする。
次に、上記外部出力電極4がユニット10の金属側出力電極、裏面電極6が半導体側出力電極として、SiCウエハ内のユニット10を下記のようにして良否判定し、良品ユニットの外部出力電極4のみにバンプを形成してSiCウエハ部材を得、これを分割加工して複数のユニット10を有するSiCチップ9とする。
例えば100Aの電流容量を持つ半導体装置を作製する場合、SiCチップ9のショトキーバリア電極3の面積に対する電流容量は3A/mm2程度であるので約6mm角の面積のショトキーバリアが必要になる。例えば、SiCウエハの欠陥密度が10個/cm2以下であると、上記面積では5%以下の歩留まりしか得られなく量産化が困難となる。そこで本実施の形態においては各ユニット10のショトキーバリア電極3の面積を十分な歩留まりが得られる大きさに設定する。例えば欠陥密度が10個/cm2程度であってもユニット10のショトキーバリア電極3の面積を1mm角にすれば80%以上の歩留まりが得られ、このユニット10をSiCチップ9に複数個配置すれば80%以上の確率で良品ユニットが得られる。
そこで、図2(a)に示すようにユニット10を4×4個配置した場合では、歩留まりが80%であると3個程度のユニットが不良ユニットとなる計算になる。本実施の形態に係わるSiCチップ9では良品のユニットの外部出力電極4のみに溶融金属からなる直径が数10〜数100μmの大きさのバンプ11を形成しており、図2でバンプ11がないユニットが不良ユニットである。
図3(a)は例えばセラミックや樹脂からなる配線基板12の表面に、少なくともSiCチップ9においてバンプ11が形成される領域に対応して配線層13が形成された場合であり、上記配線層13は外部リード13aに接続されている。配線層13と外部出力電極4はバンプ11によって電気的に接続されるので、バンプ11が形成された良品ユニットの電極のみが並列に接続される。
また、ユニット10の配列間隔は1mm以上であるので、シリコンウエハを用いた半導体装置の製造は、シリコンチップの配線基板への実装工程においては幅数100μm〜数mm、厚さ数10〜数100μmのパターンを形成するように最適化された製造装置が用いられるため、上記製造装置と形成技術で、本実施の形態に係わる配線基板12の配線層13のパターンを容易に作製でき、配線層13の膜厚も容易に数10〜数100μmの厚さに形成でき、電気抵抗の低い配線が可能となる。
なお、本実施の形態におけるユニット10はショトキバリアダイオードであり、SiCチップ9の表面からの出力は一種類だけであるので配線層13は図3(b)に示すように配線基板12の表面全面に形成された単純なパターンでもよく、配線基板12の作製工程を簡略化できる。
また、本実施の形態の半導体装置は、SiCチップ9と図3に示す配線基板部材とを接続することにより得ることができるが、上記のようにSiCウエハに設けるユニットを所定の歩留まりが確保できる程度の面積に設定し、良品のユニットの電極のみにバンプ11を形成し、このバンプ11を用い、SiCチップ9とは別の配線基板12に設けた配線層13で上記良品のユニットの外部電極を並列に接続したので、優れた特性の半導体装置を歩留まり良く得ることができる。また、バンプ11で接続するのでSiCチップ9で発生した熱をパッケージ側だけでなく配線基板側にも逃がすことが可能になりより高温での動作や高電流での動作が可能になる。
また、図12に示すように、SiCチップに配線層54や絶縁膜層51を直接成膜して設けないので、厚膜のためのストレスによるSiCウエハのそりや膜応力の発生が防止できるため半導体装置の信頼性が向上し、上記成膜工程が必要でないので製造が簡便になりコストを削減できる。また、配線基板12へバンプ11接続することにより、外部リードへの接続も同時にできるので実装工程が簡便になりコストを削減できる。
図12に示す従来の半導体装置において、絶縁層55にはCVD(Chemical Vapor Deposition)法で成膜した、厚さ1μm程度のPSG(Phosphosilicate Glass)膜などの酸化膜を使用するが、PSG膜の絶縁破壊耐圧は2〜6MV/cm程度であるので、耐圧は200〜600Vとなり、定格電圧がkV台の半導体装置は実現できない。5kVの耐圧の半導体装置を作製するには絶縁層は8〜25μmもの厚い膜が必要になり成膜が困難になる。
一方、本実施の形態においては、例えばバンプ11を100μmとすると配線層13とSiCチップ9は100μm離れるので、保護膜5とアンダーフィル樹脂19の絶縁破壊耐圧を1MV/cm程度と低めに見積もっても10kVの耐圧が確保でき、本実施の形態の半導体装置は、従来の10〜100倍の定格電圧を有することができる。
一方、本実施の形態においては、配線基板12の配線層13は、SiCチップ9とは別の配線基板12に形成されたものであるので、シリコンチップを配線基板へ実装する製造工程が適用できる。そのため、本実施の形態の半導体装置の製造において、幅が数100μm〜数mm、厚さ数10〜数100μmのパターンを形成するように最適化された装置が用いられ、配線層に銅を使用することができる。銅配線はアルミ配線よりも抵抗が低く1.8μΩcm程度なので配線の長さと幅の比を10:1とすると5mΩ以下の抵抗にするには36μmの厚さの銅配線が必要になるが、上記のようにこの厚さは容易に実現でき、さらに配線層の厚さを数100μm以上にすることも容易である。この場合は配線抵抗を0.5mΩ以下にすることもできるし、配線の長さと幅の比を100:1としても5mΩ以下の抵抗になるのでより多くのユニットを並列接続することができる。以上のように、本実施の形態の半導体装置は、配線抵抗の低い銅配線を用い、十分な厚さの配線が得られるので電流容量を従来の20〜200倍にすることができる。
図4は、本発明の実施の形態2の半導体装置の製造方法における、半導体ウエハであるSiCウエハ1a上へのバンプ形成の工程を示す説明図で、SiCウエハ1aに形成されたユニット10の良否を判定するウエハテスト(以下、単にウエハテストという。)のデータをソルダーシュート装置のコントローラー21に送り、ソルダーシュート装置で良品ユニットの外部出力電極4上にだけ選択的に溶融金属からなるバンプ11を形成する。
次に、溶融金属を滴下する装置(以下、「ソルダーシュート装置」という)でバンプ11を形成するが、ソルダーシュート装置はインクジェット印刷装置と同様な動作でインクの代わりに溶融金属の液滴をウエハの所定の位置に滴下する装置で、ウエハテスター20によるウエハテストデータに基づいて、ソルダーシュート装置によりバンプ11の形成を行う。
つまり、インクジェット印刷機で印刷するのと同様に、コントローラー21でヘッド22をSiCウエハ1aのバンプ形成位置に持っていき圧電素子にパルスを印加して上記液滴を滴下すれば所望の位置にバンプ11が形成される{図4(b)}。この時、バンプを形成する外部出力電極は薄いAu膜などが成膜してある方が溶融金属のなじみがよいので外部出力電極がAlの場合は例えばCr−Ni−Auなどを成膜する場合がある。バンプ11の形状はSiCウエハ1aの温度で決まり、例えば室温であれば溶融金属の液滴はSiCウエハ1aに触れるとすぐに固化して球状や半球状のバンプが形成される。また、SiCウエハ1aの温度をある程度上げて溶融金属の溶融温度付近にしておけばユニットの外部出力電極全体に上記金属を広げることもできる。複数個の溶融金属の液滴を同じ場所に滴下することも可能なので外部出力電極の面積に対して十分な量の溶融金属の粒を滴下すれば外部出力電極全体に広がった丘状のバンプを形成することもできる。
本実施の形態に示すように、ウエハテストデータを用いて、良品ユニットの電極にバンプを形成できるソルダーシュート装置などの装置を用いれば、バンプ材料の成膜や加工の必要がないので工程が簡便になりコストを削減できる。
また、SiCチップ9をパッケージ基板16に固定する時に、加熱温度が高すぎたり、時間が長すぎてバンプ11が溶融することを防止するには、バンプ11にダイボンド材18の金属よりも融点の高い金属を使用する。
また、裏面電極6とパッケージ基板16の配線層17を接続する溶融金属のダイボンド材18は完全に固化せずに仮固定して、配線基板12をSiCチップ9の上にのせて加熱してバンプ11と配線層13を接続する時に、裏面の溶融金属のペーストのダイボンド材18を固化するようにしてもよい。また、保護膜5の外部出力電極4開口部の大きさを最終的なバンプの大きさ程度にして、溶融金属が溶けても開口部で制限されるようにしてもよい。例えば直径100μmの開口にして直径80μm程度の溶融金属の粒をのせておけば裏面の溶融金属のペーストのダイボンド材18を固化するときに外部出力電極4上の溶融金属の粒も溶けて開口部に半球状のバンプが形成される。またSiCチップ9の固定には導電性のダイボンド材(例えば樹脂接着剤に銀フィラーなどの導電性のフィラーを混ぜた導電性接着剤)を用いてもよい。
本発明の実施の形態3の半導体装置の製造方法は、実施の形態2において、ソルダーシュート装置でバンプを形成した代わりに、バンプをボールボンダで形成する他は、実施の形態2と同様な半導体装置の製造方法であり、図6は、本実施の形態の半導体装置の製造方法に係わるバンプ形成工程を説明する図である。
例えば、金バンプ34を金のボールボンダ装置で形成する工程で、ウエハテスター20によるウエハテストデータに基づいて、コントローラー31により、良品ユニットの外部出力電極4のみに、金のワイヤ32をキャピラリ33で押し付けて接合してワイヤ32を切ることにより金バンプ34を形成する。
この時、SiCウエハ1aは例えば100℃程度に加熱され、キャピラリには加圧だけでなく超音波も印加される場合がある。
このようにウエハテストデータに基づき選択的に良品ユニットのみにバンプを形成できるのでバンプ材料の成膜や加工の必要がないので工程が簡便になりコストを削減できる。
本発明の実施の形態4の半導体装置の製造方法は、実施の形態2において、ソルダーシュート装置でバンプを形成した代わりに、写真製版技術を用いてSiCウエハの良品ユニットの電極に選択的にバンプを形成する他は、実施の形態2と同様な半導体装置の製造方法であり、図7は、実施の形態4の半導体装置の製造方法に係わるバンプ形成工程を説明する図である。
本実施の形態の半導体装置の製造方法に係わるバンプ形成工程では、ソルダーシュート装置における溶融金属槽を有するヘッドを、露光ヘッド42に置き換えて改造したものを用いることができる。露光ヘッド42は直径10〜数100μmのスポット光を照射できるようになっていて、その構造は例えば、ハロゲンランプなどの紫外線ランプ光源から光ファイバで露光ヘッド42まで光を導入して、光ファイバの出口にシャッター43を設けて露光のON/OFFを可能にしたものである。
上記ウエハテスト後のSiCウエハ1aにレジストなどの感光性樹脂44を塗布し、ウエハテストデータに基づいて、露光ヘッド42が良品ユニットの外部出力電極4上にあるときに、順次コントローラー41によりシャッター43のON信号を出して良品ユニットの上の感光性樹脂44を感光し感光部47を得る{図7(a)}。
感光性樹脂44としてポジ型のレジストを用いた場合は、現像すると感光部47が開口し、良品ユニットの外部出力電極4のみが開口した感光性樹脂44の上に蒸着などの方法で溶融金属膜45を成膜する{図7(b)}。次に、感光性樹脂44を有機溶剤などで取り除くと良品ユニットの外部出力電極4の上にだけバンプ46を形成できる{図7(c)}。
一方、本実施の形態においては、必要なバンプの直径が数10〜数100μmであるので、上記のようにマスクを用いた写真製版技術や直接描画装置ほどの解像度は必要なく、本実施の形態のように、ソルダーシュート装置を改造することによりバンプを形成することができるので設備投資が少ない。
本発明の実施の形態5の半導体装置は、実施の形態1の半導体装置における半導体素子ユニット10がSiCショトキバリアダイオードの電力素子である代わりに、SiC縦型MOSFET半導体素子を形成した他は実施の形態1と同様である。
図8(a)は、本発明の実施の形態5の半導体装置に係わる、SiCチップ9の平面図であり、実施の形態1と同様にSiC縦型MOSFET半導体素子のユニット10を4×4個配置した例を示している。つまり、縦型MOSFETの場合SiCチップ9の表面側にはゲート電極の外部出力電極7とソース電極の外部出力電極8がありドレイン電極はSiCチップ9の裏面電極から出力する。良品のユニットのゲート電極の外部出力電極7とソース電極の外部出力電極8の上のみにバンプ11が形成され、図8(a)でバンプ11がないユニットが不良ユニットである。
配線層15は外部リード15aに接続され、配線層15の配列間隔はユニットの配列間隔に等しく1mm以上であるので、一般的に、シリコンウエハを用いた半導体装置の製造において、シリコンチップの配線基板への実装工程においては幅数100μm〜数mm、厚さ数10〜数100μmのパターンを形成するように最適化された装置が用いられるため、上記製造装置と形成技術で配線層14、15は容易に数10〜数100μmの厚さに形成できて、さらに外部リード14a、15aも一体で形成することも可能である。配線基板12をSiCチップ9の上に重ねて配線層14、15とバンプ11を電気的に接続することにより、外部リード14a、15aとユニット10のソース電極とゲート電極がそれぞれ電気的に接続される。
つまり、本実施の形態に係わるSiC縦型MOSFET半導体素子は、図8および図9に示すように、ソース電極の外部出力電極7とゲート電極の外部出力電極8を分離して並列接続するため、ソース電極の外部出力電極7とゲート電極の外部出力電極8に対応して互いに分離して配置された配線層14、15が必要であり、配線層の幅に対して長さが長くなるため、上記のように配線抵抗を低減できることによる効果が顕著となるのである。
本発明の実施の形態6は、実施の形態1または実施の形態5において、バンプの設置状態が図10である他は、実施の形態1または実施の形態5と同様の半導体装置である。なお、図10は、本発明の実施の形態6の半導体装置に係わる、SiCチップ9に形成したユニット上のバンプの設置状態を示す平面図である。
図10(a)はユニット10がショットキーバリアダイオード素子のように表面に一種類の外部出力電極4がある場合、図10(b)はユニット10がSiC縦型MOSFET半導体素子のように表面に二種類の外部出力電極7、8がある場合を示し、上記実施の形態1〜5では各ユニットの外部出力電極にバンプを一個ずつ配置した例であるのに対して、バンプが複数個の場合である。外部出力電極4に複数個のバンプ11を形成し、複数のバンプで接続することにより接続抵抗を下げたり、バンプ接続部のストレスを緩和したりする効果がある。また、図10(b)に示すように、SiC縦型MOSFET半導体素子では、電流の流れないゲート電極の外部出力電極7よりも電流を流すソース電極の外部出力電極のバンプの数を増やすことによって接続抵抗を下げることもできる。
本発明の実施の形態7は、実施の形態1または実施の形態5において、バンプの設置状態が図11である他は、実施の形態1または実施の形態5と同様の半導体装置である。なお、図11は、本発明の実施の形態6の半導体装置に係わる、SiCチップ9に形成したユニット上のバンプの設置状態を示す平面図である。
図11(a)はユニット10がショットキーバリアダイオード素子のように表面に一種類の外部出力電極4がある場合、図11(b)はユニット10がSiC縦型MOSFET半導体素子のように表面に二種類の外部出力電極7、8がある場合を示し、上記実施の形態1〜6では良品のユニットの外部出力電極のみにバンプを形成した場合を示すのに対して、SiCチップにおける外部出力電極4以外の領域にも、ユニットの外部出力電極と配線層との接続を目的としない、ダミーのバンプ11aを形成した場合で、ダミーバンプ11aによりSiCチップで発生した熱を配線基板側に効率良く逃がすことができ、接続用バンプ11のストレスをダミーバンプ11aの配列によって緩和させることもできる。
ダミーバンプ11aは電気的にはユニットの外部出力電極とは接続されていないので配線層14、15に接続すればよい。または配線基板上のダミーバンプ11aが対向する位置に配線層14、15とは電気的に分離された電極パッドを設けてダミーバンプ11aと接続してもよい。
なお、上記のようにユニットの間にダミーバンプを配置したが、ユニットアレイの外側(チップの周辺部)にも配置できる。
Claims (8)
- 半導体チップに形成された複数の半導体素子ユニットと、この半導体素子ユニット毎に、互いに独立して形成された外部出力電極と、良品と不良品の半導体素子ユニットの内、良品の半導体素子ユニットの上記外部出力電極に選択的に形成されたバンプと、このバンプと電気的に接続された配線層を設けた配線基板とを備えた半導体装置。
- 半導体素子ユニットが、SiCウエハを用いたショットキーダイオードまたはSiCウエハを用いたMOSFET半導体素子であることを特徴とする請求項1に記載の半導体装置。
- 半導体チップの外部出力電極以外の領域と、配線基板とに接合するバンプを備えたことを特徴とする請求項1または請求項2に記載の半導体装置。
- 半導体ウエハに複数の半導体素子ユニットを形成する工程と、上記半導体素子ユニットの良否を判定する工程と、良品と不良品の半導体素子ユニットの内、良品の半導体素子ユニットの外部出力電極に選択的にバンプを形成して半導体ウエハ部材を得る工程と、上記半導体ウエハ部材を分割加工して複数の半導体素子ユニットを有する半導体チップを得る工程と、配線基板に設けられた配線層と上記バンプとを電気的に接続する工程とを備えた半導体装置の製造方法。
- 半導体素子ユニットが、SiCウエハを用いたショットキーダイオードまたはSiCウエハを用いたMOSFET半導体素子であることを特徴とする請求項4に記載の半導体装置の製造方法。
- バンプを形成する工程が、良品と不良品の半導体素子ユニットを判別するテスト結果に基づき、良品の半導体素子ユニットの外部出力電極に選択的に溶融金属を滴下してバンプを形成する工程であることを特徴とする請求項4または請求項5に記載の半導体装置の製造方法。
- バンプを形成する工程が、良品と不良品の半導体素子ユニットを判別するテスト結果に基づき、良品の半導体素子ユニットの外部出力電極に選択的にバンプボンダーでバンプを形成する工程であることを特徴とする請求項4または請求項5に記載の半導体装置の製造方法。
- バンプを形成する工程が、良品と不良品の半導体素子ユニットを判別するテスト結果に基づき、半導体ウエハに設けた感光性樹脂層において、良品の半導体素子ユニットの外部出力電極上に開口を形成するように上記感光性樹脂層を選択的に順次露光し、上記開口にバンプを形成して、良品の半導体素子ユニットの外部出力電極に選択的にバンプを形成する工程であることを特徴とする請求項4または請求項5に記載の半導体装置の製造方法。
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CNB2005101296333A CN100433331C (zh) | 2004-12-14 | 2005-12-14 | 半导体器件及其制造方法 |
US12/201,764 US7880763B2 (en) | 2004-12-14 | 2008-08-29 | Semiconductor device and manufacturing method therefor |
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- 2005-12-12 DE DE102005059224A patent/DE102005059224B4/de not_active Expired - Fee Related
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JP2008140857A (ja) * | 2006-11-30 | 2008-06-19 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその製造方法 |
JP2009032909A (ja) * | 2007-07-27 | 2009-02-12 | Toko Inc | ショットキーバリアダイオードの製造方法 |
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JP2013110388A (ja) * | 2011-10-28 | 2013-06-06 | Hitachi Ltd | 半導体装置 |
JP2014157926A (ja) * | 2013-02-15 | 2014-08-28 | National Institute Of Advanced Industrial & Technology | 接合方法及び半導体モジュールの製造方法 |
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Also Published As
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DE102005059224B4 (de) | 2013-05-08 |
DE102005059224A1 (de) | 2006-06-29 |
US20090004761A1 (en) | 2009-01-01 |
CN1812100A (zh) | 2006-08-02 |
US8178972B2 (en) | 2012-05-15 |
US7880763B2 (en) | 2011-02-01 |
CN100433331C (zh) | 2008-11-12 |
US20060131745A1 (en) | 2006-06-22 |
US20110057311A1 (en) | 2011-03-10 |
JP4400441B2 (ja) | 2010-01-20 |
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