JP2006066809A5 - - Google Patents

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Publication number
JP2006066809A5
JP2006066809A5 JP2004250453A JP2004250453A JP2006066809A5 JP 2006066809 A5 JP2006066809 A5 JP 2006066809A5 JP 2004250453 A JP2004250453 A JP 2004250453A JP 2004250453 A JP2004250453 A JP 2004250453A JP 2006066809 A5 JP2006066809 A5 JP 2006066809A5
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JP
Japan
Prior art keywords
electrodes
substrate
bump
semiconductor device
elastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004250453A
Other languages
English (en)
Japanese (ja)
Other versions
JP4050732B2 (ja
JP2006066809A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004250453A external-priority patent/JP4050732B2/ja
Priority to JP2004250453A priority Critical patent/JP4050732B2/ja
Priority to US11/213,882 priority patent/US7268430B2/en
Priority to CNB2005100978335A priority patent/CN100437995C/zh
Priority to KR1020050079848A priority patent/KR20060050794A/ko
Priority to TW094129599A priority patent/TWI297185B/zh
Publication of JP2006066809A publication Critical patent/JP2006066809A/ja
Priority to KR1020060118387A priority patent/KR100821574B1/ko
Publication of JP2006066809A5 publication Critical patent/JP2006066809A5/ja
Priority to US11/889,100 priority patent/US7776735B2/en
Publication of JP4050732B2 publication Critical patent/JP4050732B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004250453A 2004-08-30 2004-08-30 半導体装置およびその製造方法 Expired - Fee Related JP4050732B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004250453A JP4050732B2 (ja) 2004-08-30 2004-08-30 半導体装置およびその製造方法
TW094129599A TWI297185B (en) 2004-08-30 2005-08-30 Process for manufacturing semiconductor device and kit
CNB2005100978335A CN100437995C (zh) 2004-08-30 2005-08-30 半导体装置及其制造方法
KR1020050079848A KR20060050794A (ko) 2004-08-30 2005-08-30 반도체 장치 및 그 제조방법
US11/213,882 US7268430B2 (en) 2004-08-30 2005-08-30 Semiconductor device and process for manufacturing the same
KR1020060118387A KR100821574B1 (ko) 2004-08-30 2006-11-28 반도체 장치의 제조방법
US11/889,100 US7776735B2 (en) 2004-08-30 2007-08-09 Semiconductor device and process for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004250453A JP4050732B2 (ja) 2004-08-30 2004-08-30 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006066809A JP2006066809A (ja) 2006-03-09
JP2006066809A5 true JP2006066809A5 (enExample) 2007-04-12
JP4050732B2 JP4050732B2 (ja) 2008-02-20

Family

ID=35941904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004250453A Expired - Fee Related JP4050732B2 (ja) 2004-08-30 2004-08-30 半導体装置およびその製造方法

Country Status (5)

Country Link
US (2) US7268430B2 (enExample)
JP (1) JP4050732B2 (enExample)
KR (2) KR20060050794A (enExample)
CN (1) CN100437995C (enExample)
TW (1) TWI297185B (enExample)

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CN100468674C (zh) * 2004-11-25 2009-03-11 日本电气株式会社 半导体器件及其制造方法、线路板及其制造方法、半导体封装件和电子装置
US7786588B2 (en) * 2006-01-31 2010-08-31 International Business Machines Corporation Composite interconnect structure using injection molded solder technique
KR20090057328A (ko) * 2006-09-26 2009-06-04 알프스 덴키 가부시키가이샤 탄성 접촉자 및 이것을 이용한 금속단자 간의 접합방법
JP2008124355A (ja) * 2006-11-15 2008-05-29 Epson Imaging Devices Corp 半導体装置、異方性導電材、実装構造体、電気光学装置、突起電極の製造方法、異方性導電材の製造方法、及び、電子機器
US7793819B2 (en) * 2007-03-19 2010-09-14 Infineon Technologies Ag Apparatus and method for connecting a component with a substrate
US20080315388A1 (en) * 2007-06-22 2008-12-25 Shanggar Periaman Vertical controlled side chip connection for 3d processor package
JP4992604B2 (ja) * 2007-08-15 2012-08-08 株式会社ニコン 接合装置、接合方法
JP4548459B2 (ja) * 2007-08-21 2010-09-22 セイコーエプソン株式会社 電子部品の実装構造体
US8039960B2 (en) 2007-09-21 2011-10-18 Stats Chippac, Ltd. Solder bump with inner core pillar in semiconductor package
JP5228479B2 (ja) * 2007-12-28 2013-07-03 富士通株式会社 電子装置の製造方法
JP5493399B2 (ja) * 2009-03-12 2014-05-14 株式会社ニコン 製造装置、及び、半導体装置の製造方法
WO2010106878A1 (ja) * 2009-03-18 2010-09-23 コニカミノルタホールディングス株式会社 熱電変換素子
US8969734B2 (en) 2009-04-01 2015-03-03 Advanced Interconnections Corp. Terminal assembly with regions of differing solderability
US8119926B2 (en) * 2009-04-01 2012-02-21 Advanced Interconnections Corp. Terminal assembly with regions of differing solderability
SG192574A1 (en) * 2011-03-11 2013-09-30 Fujifilm Electronic Materials Novel etching composition
JP2012243840A (ja) * 2011-05-17 2012-12-10 Renesas Electronics Corp 半導体装置およびその製造方法
TWI577834B (zh) 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
US10784221B2 (en) * 2011-12-06 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of processing solder bump by vacuum annealing
US9512863B2 (en) * 2012-04-26 2016-12-06 California Institute Of Technology Silicon alignment pins: an easy way to realize a wafer-to-wafer alignment
JP2013251405A (ja) * 2012-05-31 2013-12-12 Tadatomo Suga 金属領域を有する基板の接合方法
JP6032667B2 (ja) * 2012-08-31 2016-11-30 国立研究開発法人産業技術総合研究所 接合方法
KR20140038735A (ko) * 2012-09-21 2014-03-31 (주)호전에이블 패키지 모듈 및 그 제조 방법
JP6151925B2 (ja) 2013-02-06 2017-06-21 ヤマハ発動機株式会社 基板固定装置、基板作業装置および基板固定方法
ITTO20150229A1 (it) * 2015-04-24 2016-10-24 St Microelectronics Srl Procedimento per produrre bump in componenti elettronici, componente e prodotto informatico corrispondenti
CN105472216B (zh) * 2015-12-01 2020-01-10 宁波舜宇光电信息有限公司 具有缓冲结构的电气支架及摄像模组
US10403601B2 (en) 2016-06-17 2019-09-03 Fairchild Semiconductor Corporation Semiconductor package and related methods
US10037957B2 (en) 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
JP6425317B2 (ja) * 2017-07-21 2018-11-21 須賀　唯知 金属領域を有する基板の接合方法
CN108054490B (zh) * 2017-12-08 2020-01-03 中国电子科技集团公司第五十四研究所 一种多层柔性基板局部微弹簧低应力组装结构
WO2019164449A1 (en) * 2018-02-22 2019-08-29 Massachusetts Institute Of Technology Method of reducing semiconductor substrate surface unevenness
CN110557903A (zh) * 2019-09-05 2019-12-10 深圳市星河电路股份有限公司 一种pcb超高金线邦定值加工方法
JP2022079295A (ja) * 2020-11-16 2022-05-26 沖電気工業株式会社 複合集積フィルム、複合集積フィルム供給ウェハ及び半導体複合装置

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JP3903359B2 (ja) 1999-05-10 2007-04-11 積水ハウス株式会社 パネル位置決め治具
JP2001050980A (ja) 1999-08-04 2001-02-23 Taniguchi Consulting Engineers Co Ltd Ｉｃの電極端子用コンタクトの構造および製造方法
US6242324B1 (en) * 1999-08-10 2001-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating singe crystal materials over CMOS devices
JP2001053106A (ja) * 1999-08-13 2001-02-23 Nec Corp フリップチップ接続構造と電子部品の製造方法
JP2001196110A (ja) * 1999-11-09 2001-07-19 Fujitsu Ltd 接触力クランプばねによって支持された変形可能なコンタクトコネクタを含む電気コネクタ組立体及び電気的接続方法
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JP4377035B2 (ja) * 2000-06-08 2009-12-02 唯知 須賀 実装方法および装置
JP3998484B2 (ja) * 2002-02-07 2007-10-24 富士通株式会社 電子部品の接続方法
US20040000428A1 (en) * 2002-06-26 2004-01-01 Mirng-Ji Lii Socketless package to circuit board assemblies and methods of using same
TW547771U (en) * 2002-07-23 2003-08-11 Via Tech Inc Elastic electrical contact package structure
JP4036786B2 (ja) * 2003-04-24 2008-01-23 唯知 須賀 電子部品実装方法
JP4768343B2 (ja) * 2005-07-27 2011-09-07 株式会社デンソー 半導体素子の実装方法

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