JP2008130863A5 - - Google Patents

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Publication number
JP2008130863A5
JP2008130863A5 JP2006315090A JP2006315090A JP2008130863A5 JP 2008130863 A5 JP2008130863 A5 JP 2008130863A5 JP 2006315090 A JP2006315090 A JP 2006315090A JP 2006315090 A JP2006315090 A JP 2006315090A JP 2008130863 A5 JP2008130863 A5 JP 2008130863A5
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JP
Japan
Prior art keywords
wire
ball
bonding
bonding point
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006315090A
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English (en)
Japanese (ja)
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JP2008130863A (ja
JP5481769B2 (ja
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Priority to JP2006315090A priority Critical patent/JP5481769B2/ja
Priority claimed from JP2006315090A external-priority patent/JP5481769B2/ja
Priority to US11/939,044 priority patent/US8132709B2/en
Publication of JP2008130863A publication Critical patent/JP2008130863A/ja
Publication of JP2008130863A5 publication Critical patent/JP2008130863A5/ja
Application granted granted Critical
Publication of JP5481769B2 publication Critical patent/JP5481769B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006315090A 2006-11-22 2006-11-22 半導体装置及びその製造方法 Active JP5481769B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006315090A JP5481769B2 (ja) 2006-11-22 2006-11-22 半導体装置及びその製造方法
US11/939,044 US8132709B2 (en) 2006-11-22 2007-11-13 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006315090A JP5481769B2 (ja) 2006-11-22 2006-11-22 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008130863A JP2008130863A (ja) 2008-06-05
JP2008130863A5 true JP2008130863A5 (enExample) 2009-12-03
JP5481769B2 JP5481769B2 (ja) 2014-04-23

Family

ID=39416135

Family Applications (1)

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JP2006315090A Active JP5481769B2 (ja) 2006-11-22 2006-11-22 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US8132709B2 (enExample)
JP (1) JP5481769B2 (enExample)

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US20080246129A1 (en) * 2007-04-04 2008-10-09 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device and semiconductor device
US8247272B2 (en) * 2007-12-27 2012-08-21 United Test And Assembly Center Ltd. Copper on organic solderability preservative (OSP) interconnect and enhanced wire bonding process
CN101615587A (zh) * 2008-06-27 2009-12-30 桑迪士克股份有限公司 半导体装置中的导线层叠式缝线接合
JP4625858B2 (ja) * 2008-09-10 2011-02-02 株式会社カイジョー ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム
DE102008060862B4 (de) 2008-12-09 2010-10-28 Werthschützky, Roland, Prof. Dr.-Ing.habil. Verfahren zur miniaturisierbaren Kontaktierung isolierter Drähte
JP5595694B2 (ja) * 2009-01-15 2014-09-24 パナソニック株式会社 半導体装置
JP5062283B2 (ja) 2009-04-30 2012-10-31 日亜化学工業株式会社 半導体装置及びその製造方法
JP2011054727A (ja) * 2009-09-01 2011-03-17 Oki Semiconductor Co Ltd 半導体装置、その製造方法、及びワイヤボンディング方法
WO2011043417A1 (ja) * 2009-10-09 2011-04-14 日亜化学工業株式会社 半導体装置及びその製造方法
US8008785B2 (en) * 2009-12-22 2011-08-30 Tessera Research Llc Microelectronic assembly with joined bond elements having lowered inductance
TWI409933B (zh) * 2010-06-15 2013-09-21 力成科技股份有限公司 晶片堆疊封裝結構及其製法
MY152355A (en) * 2011-04-11 2014-09-15 Carsem M Sdn Bhd Short and low loop wire bonding
JP2013191738A (ja) * 2012-03-14 2013-09-26 Toshiba Corp 半導体装置およびその製造方法
JP6080053B2 (ja) * 2012-09-26 2017-02-15 パナソニックＩｐマネジメント株式会社 発光モジュール
US9117721B1 (en) * 2014-03-20 2015-08-25 Excelitas Canada, Inc. Reduced thickness and reduced footprint semiconductor packaging
TWI556478B (zh) * 2014-06-30 2016-11-01 億光電子工業股份有限公司 發光二極體裝置
US10254793B1 (en) 2018-04-11 2019-04-09 Dell Products, Lp Adaptable graphics board form factor with adjacent orientation to a motherboard for use with plural external I/O requirements in information handling systems

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US6586309B1 (en) * 2000-04-24 2003-07-01 Chartered Semiconductor Manufacturing Ltd. High performance RF inductors and transformers using bonding technique
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