JP2012511257A5 - - Google Patents
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- Publication number
- JP2012511257A5 JP2012511257A5 JP2011539600A JP2011539600A JP2012511257A5 JP 2012511257 A5 JP2012511257 A5 JP 2012511257A5 JP 2011539600 A JP2011539600 A JP 2011539600A JP 2011539600 A JP2011539600 A JP 2011539600A JP 2012511257 A5 JP2012511257 A5 JP 2012511257A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- electronic device
- inclusion
- inclusions
- dielectric region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/328,319 | 2008-12-04 | ||
| US12/328,319 US7998852B2 (en) | 2008-12-04 | 2008-12-04 | Methods for forming an RF device with trench under bond pad feature |
| PCT/US2009/065902 WO2010065415A2 (en) | 2008-12-04 | 2009-11-25 | Rf device and method with trench under bond pad feature |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012511257A JP2012511257A (ja) | 2012-05-17 |
| JP2012511257A5 true JP2012511257A5 (enExample) | 2013-01-17 |
| JP5637632B2 JP5637632B2 (ja) | 2014-12-10 |
Family
ID=42230186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011539600A Active JP5637632B2 (ja) | 2008-12-04 | 2009-11-25 | ボンドパッド下の溝を特徴とするｒｆ装置及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7998852B2 (enExample) |
| JP (1) | JP5637632B2 (enExample) |
| CN (1) | CN102239552B (enExample) |
| TW (1) | TWI475653B (enExample) |
| WO (1) | WO2010065415A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115321B2 (en) * | 2009-04-30 | 2012-02-14 | Lsi Corporation | Separate probe and bond regions of an integrated circuit |
| US8492260B2 (en) * | 2010-08-30 | 2013-07-23 | Semionductor Components Industries, LLC | Processes of forming an electronic device including a feature in a trench |
| US8242613B2 (en) | 2010-09-01 | 2012-08-14 | Freescale Semiconductor, Inc. | Bond pad for semiconductor die |
| US9614590B2 (en) | 2011-05-12 | 2017-04-04 | Keyssa, Inc. | Scalable high-bandwidth connectivity |
| JP5844472B2 (ja) | 2011-09-15 | 2016-01-20 | ケッサ・インコーポレーテッド | 誘電媒体による無線通信 |
| US8649820B2 (en) | 2011-11-07 | 2014-02-11 | Blackberry Limited | Universal integrated circuit card apparatus and related methods |
| US9559790B2 (en) | 2012-01-30 | 2017-01-31 | Keyssa, Inc. | Link emission control |
| USD703208S1 (en) | 2012-04-13 | 2014-04-22 | Blackberry Limited | UICC apparatus |
| US8936199B2 (en) | 2012-04-13 | 2015-01-20 | Blackberry Limited | UICC apparatus and related methods |
| USD701864S1 (en) | 2012-04-23 | 2014-04-01 | Blackberry Limited | UICC apparatus |
| JP6154583B2 (ja) * | 2012-06-14 | 2017-06-28 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
| US8981533B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Components Industries, Llc | Electronic device including a via and a conductive structure, a process of forming the same, and an interposer |
| US9812354B2 (en) | 2015-05-15 | 2017-11-07 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a material defining a void |
| CN108313975B (zh) | 2017-01-16 | 2019-12-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
| US10896888B2 (en) | 2018-03-15 | 2021-01-19 | Microchip Technology Incorporated | Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139442A (en) | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
| JPS63283040A (ja) | 1987-05-15 | 1988-11-18 | Toshiba Corp | 半導体装置 |
| US5190889A (en) | 1991-12-09 | 1993-03-02 | Motorola, Inc. | Method of forming trench isolation structure with germanium silicate filling |
| US5217919A (en) | 1992-03-19 | 1993-06-08 | Harris Corporation | Method of forming island with polysilicon-filled trench isolation |
| US5382541A (en) | 1992-08-26 | 1995-01-17 | Harris Corporation | Method for forming recessed oxide isolation containing deep and shallow trenches |
| JPH07106511A (ja) * | 1993-10-05 | 1995-04-21 | Hitachi Ltd | 半導体集積回路装置 |
| US5707894A (en) | 1995-10-27 | 1998-01-13 | United Microelectronics Corporation | Bonding pad structure and method thereof |
| US5933746A (en) | 1996-04-23 | 1999-08-03 | Harris Corporation | Process of forming trench isolation device |
| JP3634106B2 (ja) * | 1997-03-19 | 2005-03-30 | 富士通株式会社 | 半導体装置及びその製造方法 |
| KR19990055422A (ko) * | 1997-12-27 | 1999-07-15 | 정선종 | 실리콘 기판에서의 인덕터 장치 및 그 제조 방법 |
| US5986343A (en) | 1998-05-04 | 1999-11-16 | Lucent Technologies Inc. | Bond pad design for integrated circuits |
| US6271100B1 (en) | 2000-02-24 | 2001-08-07 | International Business Machines Corporation | Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield |
| US6621136B2 (en) * | 2001-09-28 | 2003-09-16 | Semiconductor Components Industries Llc | Semiconductor device having regions of low substrate capacitance |
| JP2003179148A (ja) | 2001-10-04 | 2003-06-27 | Denso Corp | 半導体基板およびその製造方法 |
| US20030146490A1 (en) * | 2002-02-07 | 2003-08-07 | Semiconductor Components Industries, Llc. | Semiconductor device and method of providing regions of low substrate capacitance |
| US6869884B2 (en) | 2002-08-22 | 2005-03-22 | Chartered Semiconductor Manufacturing Ltd. | Process to reduce substrate effects by forming channels under inductor devices and around analog blocks |
| US7087925B2 (en) * | 2004-02-09 | 2006-08-08 | Semiconductor Components Industries, L.L.C. | Semiconductor device having reduced capacitance to substrate and method |
| KR100621884B1 (ko) | 2004-02-09 | 2006-09-14 | 삼성전자주식회사 | 보이드를 갖는 트렌치 구조 및 이를 포함하는 인덕터 |
| US7157734B2 (en) | 2005-05-27 | 2007-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor bond pad structures and methods of manufacturing thereof |
| JP2008147269A (ja) * | 2006-12-07 | 2008-06-26 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
2008
- 2008-12-04 US US12/328,319 patent/US7998852B2/en active Active
-
2009
- 2009-11-11 TW TW098138216A patent/TWI475653B/zh active
- 2009-11-25 JP JP2011539600A patent/JP5637632B2/ja active Active
- 2009-11-25 WO PCT/US2009/065902 patent/WO2010065415A2/en not_active Ceased
- 2009-11-25 CN CN200980148878.7A patent/CN102239552B/zh active Active
-
2011
- 2011-07-08 US US13/179,295 patent/US8134241B2/en active Active
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